DE69217772D1 - Halbleiteranordnung vom Dünntyp - Google Patents

Halbleiteranordnung vom Dünntyp

Info

Publication number
DE69217772D1
DE69217772D1 DE69217772T DE69217772T DE69217772D1 DE 69217772 D1 DE69217772 D1 DE 69217772D1 DE 69217772 T DE69217772 T DE 69217772T DE 69217772 T DE69217772 T DE 69217772T DE 69217772 D1 DE69217772 D1 DE 69217772D1
Authority
DE
Germany
Prior art keywords
semiconductor device
type semiconductor
thin type
thin
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69217772T
Other languages
English (en)
Other versions
DE69217772T2 (de
Inventor
Takao Fujitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69217772D1 publication Critical patent/DE69217772D1/de
Application granted granted Critical
Publication of DE69217772T2 publication Critical patent/DE69217772T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3164—Partial encapsulation or coating the coating being a foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49534—Multi-layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
DE69217772T 1991-08-20 1992-08-19 Halbleiteranordnung vom Dünntyp Expired - Fee Related DE69217772T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20708791 1991-08-20

Publications (2)

Publication Number Publication Date
DE69217772D1 true DE69217772D1 (de) 1997-04-10
DE69217772T2 DE69217772T2 (de) 1997-07-10

Family

ID=16533985

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69231039T Expired - Lifetime DE69231039D1 (de) 1991-08-20 1992-08-19 Halbleiteranordnungzusammenbau
DE69217772T Expired - Fee Related DE69217772T2 (de) 1991-08-20 1992-08-19 Halbleiteranordnung vom Dünntyp

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69231039T Expired - Lifetime DE69231039D1 (de) 1991-08-20 1992-08-19 Halbleiteranordnungzusammenbau

Country Status (5)

Country Link
US (3) US5448106A (de)
EP (2) EP0528684B1 (de)
JP (1) JP3061954B2 (de)
KR (2) KR960016239B1 (de)
DE (2) DE69231039D1 (de)

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JP3061954B2 (ja) * 1991-08-20 2000-07-10 株式会社東芝 半導体装置
US5820014A (en) 1993-11-16 1998-10-13 Form Factor, Inc. Solder preforms
KR0134648B1 (ko) * 1994-06-09 1998-04-20 김광호 노이즈가 적은 적층 멀티칩 패키지
JP2546192B2 (ja) * 1994-09-30 1996-10-23 日本電気株式会社 フィルムキャリア半導体装置
JP3332308B2 (ja) * 1995-11-07 2002-10-07 新光電気工業株式会社 半導体装置及びその製造方法
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
EP0852810B1 (de) * 1996-07-23 2002-10-09 Infineon Technologies AG Halbleiterbauelement mit isolierendem gehäuse
JPH10173003A (ja) * 1996-12-13 1998-06-26 Sharp Corp 半導体装置とその製造方法およびフィルムキャリアテープとその製造方法
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
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EP0887850A3 (de) 1997-06-23 2001-05-02 STMicroelectronics, Inc. Erzeugung eines Leiterrahmens mit verbesserten thermischen Eigenschaften
US6157074A (en) * 1997-07-16 2000-12-05 Hyundai Electronics Industries Co., Ltd. Lead frame adapted for variable sized devices, semiconductor package with such lead frame and method for using same
US6238845B1 (en) 1997-11-13 2001-05-29 Texas Instruments Incorporated Method of forming lead frames with preformation support
US6002165A (en) * 1998-02-23 1999-12-14 Micron Technology, Inc. Multilayered lead frame for semiconductor packages
US6130477A (en) * 1999-03-17 2000-10-10 Chen; Tsung-Chieh Thin enhanced TAB BGA package having improved heat dissipation
FR2794266B1 (fr) * 1999-05-25 2002-01-25 Gemplus Card Int Procede de fabrication de dispositif electronique portable a circuit integre comportant un dielectrique bas cout
US6229202B1 (en) 2000-01-10 2001-05-08 Micron Technology, Inc. Semiconductor package having downset leadframe for reducing package bow
US20030151120A1 (en) * 2000-06-28 2003-08-14 Hundt Michael J. Lead-frame forming for improved thermal performance
US7402897B2 (en) 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US20040109525A1 (en) * 2002-12-09 2004-06-10 Chieng Koc Vai Chieng Aka Michael Automatic chip counting system (process)
US8164182B2 (en) 2004-11-15 2012-04-24 Stats Chippac Ltd. Hyper thermally enhanced semiconductor package system comprising heat slugs on opposite surfaces of a semiconductor chip
JP4743764B2 (ja) * 2005-02-02 2011-08-10 セイコーインスツル株式会社 半導体パッケージの製造方法
JP4961731B2 (ja) * 2005-12-02 2012-06-27 ソニー株式会社 半導体パッケージ及び半導体パッケージの製造方法
US7468548B2 (en) * 2005-12-09 2008-12-23 Fairchild Semiconductor Corporation Thermal enhanced upper and dual heat sink exposed molded leadless package
US8841782B2 (en) * 2008-08-14 2014-09-23 Stats Chippac Ltd. Integrated circuit package system with mold gate
US8201326B2 (en) * 2008-12-23 2012-06-19 Infineon Technologies Ag Method of manufacturing a semiconductor device
JP2010176950A (ja) * 2009-01-28 2010-08-12 Kyocera Corp 光電変換装置
JP5574667B2 (ja) * 2009-10-21 2014-08-20 キヤノン株式会社 パッケージ、半導体装置、それらの製造方法及び機器
JP5354376B2 (ja) * 2009-11-27 2013-11-27 大日本印刷株式会社 半導体装置および半導体装置の製造方法
JP5629670B2 (ja) 2011-04-20 2014-11-26 株式会社アドバンテスト 試験用キャリア
JP5702701B2 (ja) 2011-04-20 2015-04-15 株式会社アドバンテスト 試験用キャリア
US11551046B1 (en) * 2011-10-19 2023-01-10 Dynamics Inc. Stacked dynamic magnetic stripe commmunications device for magnetic cards and devices
TWI441358B (zh) * 2012-01-12 2014-06-11 Lextar Electronics Corp 晶片封裝結構及其製造方法
CN104220954B (zh) * 2012-05-17 2018-07-17 英特尔公司 用于装置制造的薄膜插入模制
DE102013102828B4 (de) * 2013-03-20 2018-04-12 Semikron Elektronik Gmbh & Co. Kg Leistungsbaugruppe mit einer als Folienverbund ausgebildeten Verbindungseinrichtung
JP5626402B2 (ja) * 2013-04-24 2014-11-19 大日本印刷株式会社 半導体装置、半導体装置の製造方法、およびシールド板
NL2011512C2 (en) * 2013-09-26 2015-03-30 Besi Netherlands B V Method for moulding and surface processing electronic components and electronic component produced with this method.
KR102251001B1 (ko) 2014-06-26 2021-05-12 삼성전자주식회사 반도체 패키지
CN108242427B (zh) * 2016-12-23 2020-05-12 光宝电子(广州)有限公司 电子制品的封装结构及封装工艺
CN107910318A (zh) * 2017-12-05 2018-04-13 深圳市共进电子股份有限公司 一种电磁辐射吸波散热结构
KR102519001B1 (ko) 2018-05-28 2023-04-10 삼성전자주식회사 필름 패키지 및 이를 포함하는 패키지 모듈
JP7167889B2 (ja) * 2019-09-13 2022-11-09 豊田合成株式会社 紫外光照射装置

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Also Published As

Publication number Publication date
DE69231039D1 (de) 2000-06-15
EP0528684A2 (de) 1993-02-24
US5448106A (en) 1995-09-05
EP0528684B1 (de) 1997-03-05
EP0689243A3 (de) 1996-06-12
KR970001887B1 (en) 1997-02-18
EP0528684A3 (en) 1993-05-05
EP0689243B1 (de) 2000-05-10
US5672908A (en) 1997-09-30
KR960016239B1 (ko) 1996-12-07
DE69217772T2 (de) 1997-07-10
KR930005167A (ko) 1993-03-23
US5767572A (en) 1998-06-16
EP0689243A2 (de) 1995-12-27
JP3061954B2 (ja) 2000-07-10
JPH05198694A (ja) 1993-08-06

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