DE69219405D1 - Halbleiteranordnung mit hoher Durchbruchsspannung - Google Patents

Halbleiteranordnung mit hoher Durchbruchsspannung

Info

Publication number
DE69219405D1
DE69219405D1 DE69219405T DE69219405T DE69219405D1 DE 69219405 D1 DE69219405 D1 DE 69219405D1 DE 69219405 T DE69219405 T DE 69219405T DE 69219405 T DE69219405 T DE 69219405T DE 69219405 D1 DE69219405 D1 DE 69219405D1
Authority
DE
Germany
Prior art keywords
semiconductor device
breakdown voltage
high breakdown
voltage
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69219405T
Other languages
English (en)
Other versions
DE69219405T2 (de
Inventor
Ken Ichi Matsushita
Ichiro Omura
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69219405D1 publication Critical patent/DE69219405D1/de
Application granted granted Critical
Publication of DE69219405T2 publication Critical patent/DE69219405T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
DE69219405T 1991-06-21 1992-06-19 Halbleiteranordnung mit hoher Durchbruchsspannung Expired - Lifetime DE69219405T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15057691 1991-06-21

Publications (2)

Publication Number Publication Date
DE69219405D1 true DE69219405D1 (de) 1997-06-05
DE69219405T2 DE69219405T2 (de) 1997-09-11

Family

ID=15499908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219405T Expired - Lifetime DE69219405T2 (de) 1991-06-21 1992-06-19 Halbleiteranordnung mit hoher Durchbruchsspannung

Country Status (3)

Country Link
US (1) US5323041A (de)
EP (1) EP0519741B1 (de)
DE (1) DE69219405T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5597758A (en) * 1994-08-01 1997-01-28 Motorola, Inc. Method for forming an electrostatic discharge protection device
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE19820956A1 (de) * 1998-05-11 1999-11-18 Daimler Chrysler Ag Halbleiter-Bauelement und Verfahren zu seiner Herstellung sowie Verwendung des Halbleiter-Bauelements
SE9904710L (sv) * 1999-12-22 2001-06-23 Abb Ab Halvledaranordning
SE0003360D0 (sv) * 2000-09-21 2000-09-21 Abb Ab A semiconductor device
US7071537B2 (en) * 2002-05-17 2006-07-04 Ixys Corporation Power device having electrodes on a top surface thereof
DE10316222B3 (de) * 2003-04-09 2005-01-20 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zur Herstellung eines robusten Halbleiterbauelements und damit hergestelltes Halbleiterbauelement
US7423299B2 (en) * 2003-05-13 2008-09-09 Nxp B.V. Semiconductor devices with a field shaping region
US7808050B2 (en) 2005-06-22 2010-10-05 Nxp B.V. Semiconductor device with relatively high breakdown voltage and manufacturing method
CN102187466B (zh) 2008-10-20 2013-09-04 Nxp股份有限公司 半导体器件和这种器件的制造方法
KR101652403B1 (ko) * 2010-08-13 2016-08-31 삼성전자주식회사 전력 전자소자 및 그 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3686544A (en) * 1969-02-10 1972-08-22 Philips Corp Mosfet with dual dielectric of titanium dioxide on silicon dioxide to prevent surface current migration path
DE3024939C3 (de) * 1979-07-02 1994-08-11 Hitachi Ltd Halbleiteranordnung
DE2944937A1 (de) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US4890150A (en) * 1985-12-05 1989-12-26 North American Philips Corporation Dielectric passivation
JP2585331B2 (ja) * 1986-12-26 1997-02-26 株式会社東芝 高耐圧プレーナ素子
US4799100A (en) * 1987-02-17 1989-01-17 Siliconix Incorporated Method and apparatus for increasing breakdown of a planar junction
USH665H (en) * 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
JPH0473970A (ja) * 1990-07-16 1992-03-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置

Also Published As

Publication number Publication date
US5323041A (en) 1994-06-21
EP0519741A2 (de) 1992-12-23
EP0519741B1 (de) 1997-05-02
DE69219405T2 (de) 1997-09-11
EP0519741A3 (en) 1993-05-19

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