DE69220600T2 - Verfahren zum Herstellen einer rotationsinduzierten Übergitterstruktur - Google Patents

Verfahren zum Herstellen einer rotationsinduzierten Übergitterstruktur

Info

Publication number
DE69220600T2
DE69220600T2 DE69220600T DE69220600T DE69220600T2 DE 69220600 T2 DE69220600 T2 DE 69220600T2 DE 69220600 T DE69220600 T DE 69220600T DE 69220600 T DE69220600 T DE 69220600T DE 69220600 T2 DE69220600 T2 DE 69220600T2
Authority
DE
Germany
Prior art keywords
induced
producing
rotation
superlattice structure
superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69220600T
Other languages
English (en)
Other versions
DE69220600D1 (de
Inventor
Yung-Chung Kao
Hung-Yu Liu
Alan C Seabaugh
James H Luscombe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69220600D1 publication Critical patent/DE69220600D1/de
Publication of DE69220600T2 publication Critical patent/DE69220600T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002Controlling or regulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68Crystals with laminate structure, e.g. "superlattices"
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02392Phosphides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02463Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02505Layer structure consisting of more than two layers
    • H01L21/02507Alternating layers, e.g. superlattice
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/925Fluid growth doping control, e.g. delta doping
DE69220600T 1991-04-12 1992-04-10 Verfahren zum Herstellen einer rotationsinduzierten Übergitterstruktur Expired - Fee Related DE69220600T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68394291A 1991-04-12 1991-04-12

Publications (2)

Publication Number Publication Date
DE69220600D1 DE69220600D1 (de) 1997-08-07
DE69220600T2 true DE69220600T2 (de) 1998-01-02

Family

ID=24746088

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220600T Expired - Fee Related DE69220600T2 (de) 1991-04-12 1992-04-10 Verfahren zum Herstellen einer rotationsinduzierten Übergitterstruktur

Country Status (4)

Country Link
US (1) US5415128A (de)
EP (1) EP0508463B1 (de)
JP (1) JPH05114768A (de)
DE (1) DE69220600T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514876A (en) * 1994-04-15 1996-05-07 Trw Inc. Multi-terminal resonant tunneling transistor
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP4659732B2 (ja) * 2003-01-27 2011-03-30 台湾積體電路製造股▲ふん▼有限公司 半導体層を形成する方法
JP3964367B2 (ja) * 2003-08-25 2007-08-22 シャープ株式会社 分子線エピタキシャル成長装置及びその制御方法
US9127349B2 (en) * 2008-12-23 2015-09-08 Applied Materials, Inc. Method and apparatus for depositing mixed layers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145998A (ja) * 1984-01-07 1985-08-01 Agency Of Ind Science & Technol Mbe成長方法
GB2158843A (en) * 1984-05-14 1985-11-20 Philips Electronic Associated Method of manufacturing a semiconductor device by molecular beam epitaxy
JPS61181121A (ja) * 1985-02-06 1986-08-13 Sumitomo Electric Ind Ltd 半導体薄膜の製造方法
JPS61278130A (ja) * 1985-06-04 1986-12-09 Fujitsu Ltd 分子線エピタキシヤル成長装置
KR900002687B1 (ko) * 1985-12-16 1990-04-23 후지쓰가부시끼가이샤 Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법
US4885260A (en) * 1987-02-17 1989-12-05 Matsushita Electric Industrial Co., Ltd. Method of laser enhanced vapor phase growth for compound semiconductor
EP0305195A3 (de) * 1987-08-27 1990-11-28 Texas Instruments Incorporated Wachstum eines unter inneren Spannungen mittels ununterbrochener CVD gebildeten Übergitters unter Verwendung gebräuchlicher CVD-Reaktoren
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH01278496A (ja) * 1988-04-28 1989-11-08 Shimadzu Corp 薄膜製造方法
US5091335A (en) * 1990-03-30 1992-02-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration MBE growth technology for high quality strained III-V layers

Also Published As

Publication number Publication date
EP0508463A3 (en) 1993-02-03
EP0508463A2 (de) 1992-10-14
JPH05114768A (ja) 1993-05-07
EP0508463B1 (de) 1997-07-02
DE69220600D1 (de) 1997-08-07
US5415128A (en) 1995-05-16

Similar Documents

Publication Publication Date Title
DE69327063D1 (de) Zahnbürste und verfahren zum herstellen einer zahnbürste
DE69334194D1 (de) Verfahren zum Erzeugen einer Halbleitervorrichtung
DE3780369T2 (de) Verfahren zum herstellen einer halbleiterstruktur.
DE3686600T2 (de) Verfahren zum herstellen einer harzumhuellten halbleiteranordnung.
DE68911621T2 (de) Verfahren zum Herstellen einer Einrichtung.
DE59107556D1 (de) Reflektor und Verfahren zum Erzeugen einer Reflektorform
DE69205000D1 (de) Verfahren zum herstellen einer zahnärztlichen absaugeinrichtung.
DE68906034D1 (de) Verfahren zum herstellen einer halbleiteranordnung.
DE69226887D1 (de) Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung
DE3671324D1 (de) Verfahren zum herstellen einer halbleiteranordnung.
DE3877282D1 (de) Verfahren zum herstellen einer halbleiter-vorrichtung.
ATA194691A (de) Verfahren zum herstellen einer mehrschichtholzplatte
DE59304686D1 (de) Verfahren zum herstellen einer bremsscheibe für eine scheibenbremse
DE69622274D1 (de) Verfahren zum herstellen einer matte
DE69312283T2 (de) Verfahren zum herstellen von wellrohren
DE3580335D1 (de) Verfahren zum herstellen einer halbleiterstruktur.
DE69220600D1 (de) Verfahren zum Herstellen einer rotationsinduzierten Übergitterstruktur
ATA175991A (de) Verfahren zum herstellen von drahtgittern
ATA122690A (de) Verfahren zum herstellen einer nockenwelle
DE59309045D1 (de) Verfahren zur herstellung einer halbleiterstruktur
DE69205837D1 (de) Verfahren zum herstellen einer siebtrommel.
DE69315583D1 (de) Verfahren zum herstellen einer lärmschutzwand und lärmschutzwand
DE3680036D1 (de) Verfahren zum herstellen einer halbleiteranordnung.
DE58901306D1 (de) Verfahren zum herstellen einer spundwand.
DE59104091D1 (de) Verfahren zum herstellen einer schaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO., LEXINGTON, MASS., US

8339 Ceased/non-payment of the annual fee