DE69221157D1 - Scr-schutzstrukturen und -schutzschaltung mit reduzierten zuendspannung - Google Patents

Scr-schutzstrukturen und -schutzschaltung mit reduzierten zuendspannung

Info

Publication number
DE69221157D1
DE69221157D1 DE69221157T DE69221157T DE69221157D1 DE 69221157 D1 DE69221157 D1 DE 69221157D1 DE 69221157 T DE69221157 T DE 69221157T DE 69221157 T DE69221157 T DE 69221157T DE 69221157 D1 DE69221157 D1 DE 69221157D1
Authority
DE
Germany
Prior art keywords
circuit
ignition voltage
protection structures
reduced ignition
scr protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69221157T
Other languages
English (en)
Other versions
DE69221157T2 (de
Inventor
Leslie Avery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarnoff Corp
Original Assignee
Sharp Corp
David Sarnoff Research Center Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, David Sarnoff Research Center Inc filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69221157D1 publication Critical patent/DE69221157D1/de
Publication of DE69221157T2 publication Critical patent/DE69221157T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
DE69221157T 1991-12-09 1992-12-04 Scr-schutzstrukturen und -schutzschaltung mit reduzierten zuendspannung Expired - Lifetime DE69221157T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/803,880 US5274262A (en) 1989-05-17 1991-12-09 SCR protection structure and circuit with reduced trigger voltage
PCT/US1992/010336 WO1993012544A1 (en) 1991-12-09 1992-12-04 Scr protection structure and circuit with reduced trigger voltage

Publications (2)

Publication Number Publication Date
DE69221157D1 true DE69221157D1 (de) 1997-09-04
DE69221157T2 DE69221157T2 (de) 1998-01-08

Family

ID=25187679

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221157T Expired - Lifetime DE69221157T2 (de) 1991-12-09 1992-12-04 Scr-schutzstrukturen und -schutzschaltung mit reduzierten zuendspannung

Country Status (7)

Country Link
US (1) US5274262A (de)
EP (1) EP0616728B1 (de)
JP (1) JP2699654B2 (de)
KR (1) KR0139648B1 (de)
DE (1) DE69221157T2 (de)
ES (1) ES2105206T3 (de)
WO (1) WO1993012544A1 (de)

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FR2690786A1 (fr) * 1992-04-30 1993-10-29 Sgs Thomson Microelectronics Sa Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
US5343053A (en) * 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits
US5616943A (en) 1993-09-29 1997-04-01 At&T Global Information Solutions Company Electrostatic discharge protection system for mixed voltage application specific integrated circuit design
JPH07169922A (ja) * 1993-09-29 1995-07-04 At & T Global Inf Solutions Internatl Inc シリコン制御整流器
US5430595A (en) * 1993-10-15 1995-07-04 Intel Corporation Electrostatic discharge protection circuit
US5600525A (en) * 1994-08-17 1997-02-04 David Sarnoff Research Center Inc ESD protection circuit for integrated circuit
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
US5907462A (en) * 1994-09-07 1999-05-25 Texas Instruments Incorporated Gate coupled SCR for ESD protection circuits
US5572394A (en) * 1995-04-06 1996-11-05 Industrial Technology Research Institute CMOS on-chip four-LVTSCR ESD protection scheme
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
CN1099713C (zh) * 1995-04-06 2003-01-22 工业技术研究院 用n边多边形单元布线的mos单元、多单元晶体管及ic芯片
US5754380A (en) * 1995-04-06 1998-05-19 Industrial Technology Research Institute CMOS output buffer with enhanced high ESD protection capability
JP2850801B2 (ja) * 1995-07-28 1999-01-27 日本電気株式会社 半導体素子
EP0785576A3 (de) * 1995-09-29 1998-10-07 Texas Instruments Incorporated Schaltung mit einem Schutzmittel
EP0803955A3 (de) * 1996-04-25 1998-05-20 Texas Instruments Incorporated Schutzschaltung gegen elektrostatische Entladung
US5966599A (en) * 1996-05-21 1999-10-12 Lsi Logic Corporation Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device
US5663860A (en) * 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits
US5821572A (en) * 1996-12-17 1998-10-13 Symbios, Inc. Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
JP4256544B2 (ja) 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路
US6271999B1 (en) 1998-11-20 2001-08-07 Taiwan Semiconductor Manufacturing Company ESD protection circuit for different power supplies
US6594132B1 (en) 2000-05-17 2003-07-15 Sarnoff Corporation Stacked silicon controlled rectifiers for ESD protection
US6803633B2 (en) * 2001-03-16 2004-10-12 Sarnoff Corporation Electrostatic discharge protection structures having high holding current for latch-up immunity
US7525777B2 (en) * 2002-03-27 2009-04-28 Tower Manufacturing Corporation Fireguard circuit
US20040094526A1 (en) * 2002-11-15 2004-05-20 Mccoy Edward D. Cutting laser beam nozzle assembly
US7196889B2 (en) * 2002-11-15 2007-03-27 Medtronic, Inc. Zener triggered overvoltage protection device
US7244992B2 (en) * 2003-07-17 2007-07-17 Ming-Dou Ker Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
US20050275029A1 (en) * 2004-06-15 2005-12-15 Jeffrey Watt Fast turn-on and low-capacitance SCR ESD protection
US7408754B1 (en) 2004-11-18 2008-08-05 Altera Corporation Fast trigger ESD device for protection of integrated circuits
DE102005022763B4 (de) * 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
US20070263332A1 (en) * 2006-05-11 2007-11-15 Silicon Laboratories, Inc. System and method for high voltage protection of powered devices
US7732834B2 (en) * 2007-01-26 2010-06-08 Infineon Technologies Ag Semiconductor ESD device and method of making same
US20090273868A1 (en) * 2008-05-01 2009-11-05 Semiconductor Components Industries, Llc Transient voltage suppressor and method
US8339758B2 (en) * 2008-05-01 2012-12-25 Semiconductor Components Industries, Llc Transient voltage suppressor and method
US7638857B2 (en) * 2008-05-07 2009-12-29 United Microelectronics Corp. Structure of silicon controlled rectifier
US9041054B2 (en) 2010-02-22 2015-05-26 Sofics Bvba High holding voltage electrostatic discharge protection device
US8653557B2 (en) * 2010-02-22 2014-02-18 Sofics Bvba High holding voltage electrostatic discharge (ESD) device
US10580765B1 (en) * 2018-12-02 2020-03-03 Nanya Technology Corporation Semiconductor structure for electrostatic discharge protection

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SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS5422781A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Insulator gate protective semiconductor device
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
YU43752B (en) * 1978-10-16 1989-12-31 Marko Petrovic Transistorized voltage limiter
JPS5696851A (en) * 1979-12-27 1981-08-05 Fujitsu Ltd Static breakdown preventive element
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US4797724A (en) * 1982-06-30 1989-01-10 Honeywell Inc. Reducing bipolar parasitic effects in IGFET devices
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4513309A (en) * 1982-11-03 1985-04-23 Westinghouse Electric Corp. Prevention of latch-up in CMOS integrated circuits using Schottky diodes
US4622573A (en) * 1983-03-31 1986-11-11 International Business Machines Corporation CMOS contacting structure having degeneratively doped regions for the prevention of latch-up
IT1212767B (it) * 1983-07-29 1989-11-30 Ates Componenti Elettron Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.
JPS60152055A (ja) * 1984-01-20 1985-08-10 Matsushita Electric Ind Co Ltd 相補型ｍｏｓ半導体装置
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
GB8621839D0 (en) * 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
US4939616A (en) * 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
JP2505652B2 (ja) * 1989-05-17 1996-06-12 デイビッド サーノフ リサーチ センター，インコーポレイテッド 低トリガ電圧ｓｃｒ保護装置及び構造
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure

Also Published As

Publication number Publication date
EP0616728A1 (de) 1994-09-28
JP2699654B2 (ja) 1998-01-19
ES2105206T3 (es) 1997-10-16
US5274262A (en) 1993-12-28
EP0616728A4 (de) 1995-01-04
DE69221157T2 (de) 1998-01-08
EP0616728B1 (de) 1997-07-23
WO1993012544A1 (en) 1993-06-24
KR0139648B1 (ko) 1998-06-01
JPH07506216A (ja) 1995-07-06

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SARNOFF CORP., PRINCETON, N.J., US SHARP CORP., TE

8364 No opposition during term of opposition