DE69224310T2 - Gatestruktur einer Feldeffektanordnung und Verfahren zur Herstellung - Google Patents

Gatestruktur einer Feldeffektanordnung und Verfahren zur Herstellung

Info

Publication number
DE69224310T2
DE69224310T2 DE69224310T DE69224310T DE69224310T2 DE 69224310 T2 DE69224310 T2 DE 69224310T2 DE 69224310 T DE69224310 T DE 69224310T DE 69224310 T DE69224310 T DE 69224310T DE 69224310 T2 DE69224310 T2 DE 69224310T2
Authority
DE
Germany
Prior art keywords
manufacture
field effect
gate structure
effect arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69224310T
Other languages
English (en)
Other versions
DE69224310D1 (de
Inventor
Shunpei Yamazaki
Akira Mase
Toshiji Hamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3065418A external-priority patent/JP2717233B2/ja
Priority claimed from JP13556991A external-priority patent/JP2717234B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE69224310D1 publication Critical patent/DE69224310D1/de
Application granted granted Critical
Publication of DE69224310T2 publication Critical patent/DE69224310T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
DE69224310T 1991-03-06 1992-03-06 Gatestruktur einer Feldeffektanordnung und Verfahren zur Herstellung Expired - Fee Related DE69224310T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3065418A JP2717233B2 (ja) 1991-03-06 1991-03-06 絶縁ゲイト型電界効果半導体装置およびその作製方法
JP13556991A JP2717234B2 (ja) 1991-05-11 1991-05-11 絶縁ゲイト型電界効果半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
DE69224310D1 DE69224310D1 (de) 1998-03-12
DE69224310T2 true DE69224310T2 (de) 1998-09-24

Family

ID=26406563

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224310T Expired - Fee Related DE69224310T2 (de) 1991-03-06 1992-03-06 Gatestruktur einer Feldeffektanordnung und Verfahren zur Herstellung

Country Status (4)

Country Link
US (5) US5289030A (de)
EP (1) EP0502749B1 (de)
KR (1) KR960001611B1 (de)
DE (1) DE69224310T2 (de)

Families Citing this family (218)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2999271B2 (ja) * 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US5854494A (en) * 1991-02-16 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JP3556679B2 (ja) 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
USRE36314E (en) * 1991-03-06 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP2717237B2 (ja) * 1991-05-16 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US5650338A (en) * 1991-08-26 1997-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film transistor
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5495121A (en) * 1991-09-30 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2784615B2 (ja) * 1991-10-16 1998-08-06 株式会社半導体エネルギー研究所 電気光学表示装置およびその駆動方法
US7071910B1 (en) * 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US6759680B1 (en) 1991-10-16 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Display device having thin film transistors
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
TW222345B (en) * 1992-02-25 1994-04-11 Semicondustor Energy Res Co Ltd Semiconductor and its manufacturing method
JP2651972B2 (ja) 1992-03-04 1997-09-10 株式会社半導体エネルギー研究所 液晶電気光学装置
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
TW223178B (en) * 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5899709A (en) * 1992-04-07 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device using anodic oxidation
US5576225A (en) * 1992-05-09 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of forming electric circuit using anodic oxidation
CN1052568C (zh) * 1992-07-06 2000-05-17 株式会社半导体能源研究所 形成半导体器件的方法
EP0582387B1 (de) * 1992-08-05 1999-05-26 Sharp Kabushiki Kaisha Metallische Leiterplatte und Herstellungsverfahren dafür
EP0588370A3 (en) * 1992-09-18 1994-06-08 Matsushita Electric Ind Co Ltd Manufacturing method of thin film transistor and semiconductor device utilized for liquid crystal display
US5576556A (en) * 1993-08-20 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device with gate metal oxide and sidewall spacer
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
JP2912506B2 (ja) * 1992-10-21 1999-06-28 シャープ株式会社 透明導電膜の形成方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
JP3007497B2 (ja) * 1992-11-11 2000-02-07 三菱電機株式会社 半導体集積回路装置、その製造方法、及びその実装方法
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6544825B1 (en) * 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
TW425637B (en) 1993-01-18 2001-03-11 Semiconductor Energy Lab Method of fabricating mis semiconductor device
JP3497198B2 (ja) * 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US6683350B1 (en) * 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP3662263B2 (ja) * 1993-02-15 2005-06-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR0131179B1 (ko) * 1993-02-22 1998-04-14 슌뻬이 야마자끼 전자회로 제조프로세스
JP3107941B2 (ja) * 1993-03-05 2000-11-13 株式会社半導体エネルギー研究所 薄膜トランジスタおよびその作製方法
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
JPH06275640A (ja) * 1993-03-22 1994-09-30 Semiconductor Energy Lab Co Ltd 薄膜トランジスタおよびその作製方法
WO1994022173A1 (en) * 1993-03-23 1994-09-29 Tdk Corporation Solid state imaging device and process for production thereof
US5747355A (en) * 1993-03-30 1998-05-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing a transistor using anodic oxidation
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
US6090646A (en) 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
KR100355938B1 (ko) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JP3375681B2 (ja) * 1993-06-04 2003-02-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH0730125A (ja) 1993-07-07 1995-01-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2677167B2 (ja) * 1993-07-08 1997-11-17 日本電気株式会社 駆動回路内蔵型液晶表示装置の製造方法
US6808965B1 (en) * 1993-07-26 2004-10-26 Seiko Epson Corporation Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530° C. or less using low pressure chemical vapor deposition
JPH0766152A (ja) * 1993-08-30 1995-03-10 Sony Corp 半導体装置の製造方法
US5581092A (en) * 1993-09-07 1996-12-03 Semiconductor Energy Laboratory Co., Ltd. Gate insulated semiconductor device
TW297142B (de) * 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
US6777763B1 (en) * 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP3030368B2 (ja) * 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5414276A (en) * 1993-10-18 1995-05-09 The Regents Of The University Of California Transistors using crystalline silicon devices on glass
JPH07135323A (ja) * 1993-10-20 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路およびその作製方法
US5576231A (en) * 1993-11-05 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
TW272319B (de) * 1993-12-20 1996-03-11 Sharp Kk
KR950021242A (ko) * 1993-12-28 1995-07-26 김광호 다결정 실리콘 박막 트랜지스터 및 그 제조 방법
US6884698B1 (en) * 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6943764B1 (en) 1994-04-22 2005-09-13 Semiconductor Energy Laboratory Co., Ltd. Driver circuit for an active matrix display device
JPH07321323A (ja) * 1994-05-24 1995-12-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
EP1722403B1 (de) * 1994-06-15 2012-07-25 Seiko Epson Corporation Herstellungsmethode für eine Dünnfilmhalbleiteranordnung
US6773971B1 (en) 1994-07-14 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions
US6906383B1 (en) * 1994-07-14 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacture thereof
JP3330736B2 (ja) * 1994-07-14 2002-09-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3897826B2 (ja) 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
KR0179066B1 (ko) * 1994-11-03 1999-03-20 구자홍 박막트랜지스터 및 그 제조방법
JPH08286212A (ja) * 1995-04-14 1996-11-01 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
US6100119A (en) * 1995-08-31 2000-08-08 Lg Electronics Inc. Thin film transistor and method for fabricating the same
US5783852A (en) * 1995-08-31 1998-07-21 Lg Electronics Inc. Thin film transistor and method for fabricating the same
JP3917205B2 (ja) * 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09162415A (ja) * 1995-12-09 1997-06-20 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US6478263B1 (en) * 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US7056381B1 (en) * 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
JP3472024B2 (ja) 1996-02-26 2003-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP3126661B2 (ja) 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP3634089B2 (ja) * 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 表示装置
TW451284B (en) * 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JPH10189966A (ja) * 1996-12-26 1998-07-21 Toshiba Corp 半導体装置及びその製造方法
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
US6576069B1 (en) 1998-05-22 2003-06-10 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4030193B2 (ja) * 1998-07-16 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
US6630977B1 (en) 1999-05-20 2003-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor formed around contact hole
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
CN1263159C (zh) * 1999-06-02 2006-07-05 株式会社半导体能源研究所 半导体器件及其制造方法
US6403454B1 (en) * 1999-10-29 2002-06-11 Agere Systems Guardian Corp. Silicon semiconductor devices with δ-doped layers
JP2001127265A (ja) * 1999-10-29 2001-05-11 Matsushita Electronics Industry Corp 半導体記憶装置およびその駆動方法
JP4562835B2 (ja) 1999-11-05 2010-10-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001168343A (ja) 1999-12-13 2001-06-22 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
US20030235936A1 (en) * 1999-12-16 2003-12-25 Snyder John P. Schottky barrier CMOS device and method
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
JP5408829B2 (ja) * 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
JP3851752B2 (ja) 2000-03-27 2006-11-29 株式会社東芝 半導体装置の製造方法
US6762129B2 (en) * 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
KR100382955B1 (ko) * 2000-10-10 2003-05-09 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US6603181B2 (en) * 2001-01-16 2003-08-05 International Business Machines Corporation MOS device having a passivated semiconductor-dielectric interface
SG179310A1 (en) 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
EP1417718A1 (de) * 2001-08-10 2004-05-12 Spinnaker Semiconductor, Inc. Transistor mit gate-isolationsschicht hoher dielektrizitätskonstante und mit source und drain, welche einen schottky-kontakt mit dem substrat bilden
US20060079059A1 (en) * 2001-08-10 2006-04-13 Snyder John P Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
JP2003068987A (ja) * 2001-08-28 2003-03-07 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
US6974737B2 (en) * 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method
TWI288443B (en) * 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
US6703272B2 (en) * 2002-06-21 2004-03-09 Micron Technology, Inc. Methods of forming spaced conductive regions, and methods of forming capacitor constructions
JP2004071696A (ja) * 2002-08-02 2004-03-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US7605023B2 (en) * 2002-08-29 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device and heat treatment method therefor
JP4627961B2 (ja) * 2002-09-20 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI305681B (en) * 2002-11-22 2009-01-21 Toppoly Optoelectronics Corp Method for fabricating thin film transistor array and driving circuits
FR2848726B1 (fr) * 2002-12-16 2005-11-04 Commissariat Energie Atomique Transistor mis a grille auto-alignee et son procede de fabrication
EP1435648A1 (de) * 2002-12-30 2004-07-07 STMicroelectronics S.r.l. Verfahren zur Herstellung von CMOS- und Drain-Extension MOS Transistoren mit silizidiertem Gate
JP4342826B2 (ja) 2003-04-23 2009-10-14 株式会社半導体エネルギー研究所 半導体素子の作製方法
JP4393812B2 (ja) * 2003-07-18 2010-01-06 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP4480968B2 (ja) * 2003-07-18 2010-06-16 株式会社半導体エネルギー研究所 表示装置
US7067385B2 (en) * 2003-09-04 2006-06-27 Micron Technology, Inc. Support for vertically oriented capacitors during the formation of a semiconductor device
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
JP2005269601A (ja) * 2004-02-16 2005-09-29 Ricoh Co Ltd 原稿搬送読取装置および画像形成装置
DE102004020938B3 (de) * 2004-04-28 2005-09-08 Infineon Technologies Ag Verfahren zum Herstellen einer ersten Kontaktlochebene in einem Speicherbaustein
EP2250988A3 (de) * 2004-04-30 2011-11-30 Hill-Rom Services, Inc. Patientenstütze
US7883478B2 (en) * 2004-04-30 2011-02-08 Hill-Rom Services, Inc. Patient support having real time pressure control
US7469436B2 (en) * 2004-04-30 2008-12-30 Hill-Rom Services, Inc. Pressure relief surface
US7387939B2 (en) * 2004-07-19 2008-06-17 Micron Technology, Inc. Methods of forming semiconductor structures and capacitor devices
US7598134B2 (en) * 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7202127B2 (en) * 2004-08-27 2007-04-10 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7439152B2 (en) * 2004-08-27 2008-10-21 Micron Technology, Inc. Methods of forming a plurality of capacitors
US20060046055A1 (en) 2004-08-30 2006-03-02 Nan Ya Plastics Corporation Superfine fiber containing grey dope dyed component and the fabric made of the same
US7547945B2 (en) 2004-09-01 2009-06-16 Micron Technology, Inc. Transistor devices, transistor structures and semiconductor constructions
KR101085136B1 (ko) * 2004-12-04 2011-11-18 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법
US7320911B2 (en) 2004-12-06 2008-01-22 Micron Technology, Inc. Methods of forming pluralities of capacitors
US20060157684A1 (en) * 2004-12-15 2006-07-20 The Regents Of The University Of California Thin film multilayer with nanolayers addressable from the macroscale
US7915058B2 (en) * 2005-01-28 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same
US7557015B2 (en) 2005-03-18 2009-07-07 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
GB2425654B (en) * 2005-04-29 2010-03-17 Seiko Epson Corp A method of fabricating a heterojunction of organic semiconducting polymers
EP1722466A1 (de) * 2005-05-13 2006-11-15 STMicroelectronics S.r.l. Verfahren und entsprechende Schaltung zur Erzeugung einer Steuergleichspannung eines Synchrongleichrichters
US7517753B2 (en) * 2005-05-18 2009-04-14 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7544563B2 (en) * 2005-05-18 2009-06-09 Micron Technology, Inc. Methods of forming a plurality of capacitors
JP2007019177A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体装置
JP5231222B2 (ja) 2005-07-08 2013-07-10 ヒル−ロム サービシーズ，インコーポレイティド 患者支持体用制御ユニット
EP1901635B1 (de) * 2005-07-08 2013-05-01 Hill-Rom Services, Inc. Patientenliege
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
US7199005B2 (en) * 2005-08-02 2007-04-03 Micron Technology, Inc. Methods of forming pluralities of capacitors
KR100721661B1 (ko) * 2005-08-26 2007-05-23 매그나칩 반도체 유한회사 이미지 센서 및 그 제조 방법
US7867851B2 (en) 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
JP4301227B2 (ja) * 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー
WO2007040183A1 (ja) * 2005-10-03 2007-04-12 Sharp Kabushiki Kaisha シリコン系薄膜光電変換装置、その製造方法およびその製造装置
US7700441B2 (en) 2006-02-02 2010-04-20 Micron Technology, Inc. Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
JP4750586B2 (ja) * 2006-02-28 2011-08-17 住友電工デバイス・イノベーション株式会社 半導体装置および電子装置並びにその製造方法
US7557013B2 (en) 2006-04-10 2009-07-07 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7602001B2 (en) * 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
US7772632B2 (en) 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US7589995B2 (en) 2006-09-07 2009-09-15 Micron Technology, Inc. One-transistor memory cell with bias gate
US7902081B2 (en) 2006-10-11 2011-03-08 Micron Technology, Inc. Methods of etching polysilicon and methods of forming pluralities of capacitors
DE102006048997B3 (de) * 2006-10-17 2008-06-19 Ullrich Gmbh Schnell trocknende, Schmutz abweisende, schaltbare und superharte Glasoberflächen und Verfahren zu ihrer Herstellung
US7785962B2 (en) 2007-02-26 2010-08-31 Micron Technology, Inc. Methods of forming a plurality of capacitors
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US7682924B2 (en) 2007-08-13 2010-03-23 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8388851B2 (en) 2008-01-08 2013-03-05 Micron Technology, Inc. Capacitor forming methods
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
US7759193B2 (en) 2008-07-09 2010-07-20 Micron Technology, Inc. Methods of forming a plurality of capacitors
KR101829673B1 (ko) * 2008-09-12 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
SG165252A1 (en) * 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP5032532B2 (ja) * 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) * 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP5006379B2 (ja) * 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
CN102576518A (zh) 2009-10-16 2012-07-11 株式会社半导体能源研究所 液晶显示设备以及具有其的电子装置
CN102598095B (zh) * 2009-11-13 2016-02-10 株式会社半导体能源研究所 显示器件以及包含显示器件的电子器件
KR101689691B1 (ko) * 2010-03-23 2016-12-27 주성엔지니어링(주) 박막 트렌지스터의 제조 방법
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9287405B2 (en) * 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
JP6050662B2 (ja) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
US8995218B2 (en) * 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8652926B1 (en) 2012-07-26 2014-02-18 Micron Technology, Inc. Methods of forming capacitors
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
KR102617041B1 (ko) 2015-12-28 2023-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 장치, 텔레비전 시스템, 및 전자 기기
TWI733836B (zh) * 2016-07-12 2021-07-21 南韓商Ａｂｍ股份有限公司 金屬構件及其製造方法以及具有該金屬構件的處理室
CN107170807B (zh) * 2017-05-11 2020-07-31 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
US10930777B2 (en) * 2017-11-21 2021-02-23 Globalfoundries U.S. Inc. Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage
US10566194B2 (en) 2018-05-07 2020-02-18 Lam Research Corporation Selective deposition of etch-stop layer for enhanced patterning
CN110867411B (zh) * 2019-11-28 2022-07-19 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置

Family Cites Families (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275915A (en) 1966-09-27 Beta tantalum thin-film capacitors
US3634203A (en) 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits
US4015281A (en) 1970-03-30 1977-03-29 Hitachi, Ltd. MIS-FETs isolated on common substrate
US3671819A (en) 1971-01-26 1972-06-20 Westinghouse Electric Corp Metal-insulator structures and method for forming
US3740280A (en) 1971-05-14 1973-06-19 Rca Corp Method of making semiconductor device
JPS4834686A (de) 1971-09-09 1973-05-21
US3775262A (en) 1972-02-09 1973-11-27 Ncr Method of making insulated gate field effect transistor
JPS4978483A (de) 1972-11-30 1974-07-29
US4055885A (en) 1973-02-28 1977-11-01 Hitachi, Ltd. Charge transfer semiconductor device with electrodes separated by oxide region therebetween and method for fabricating the same
US4042945A (en) 1974-02-28 1977-08-16 Westinghouse Electric Corporation N-channel MOS transistor
US4015781A (en) 1974-07-04 1977-04-05 Erich Beck Conversion of plastic waste into extrudable pellets
JPS52102690A (en) 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
JPS5820141B2 (ja) 1976-09-20 1983-04-21 富士通株式会社 半導体装置
US4075653A (en) 1976-11-19 1978-02-21 International Business Machines Corporation Method for injecting charge in field effect devices
JPS54149469A (en) 1978-05-16 1979-11-22 Toshiba Corp Semiconductor device
US4455737A (en) * 1978-05-26 1984-06-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
JPS5518056A (en) 1978-07-25 1980-02-07 Nec Corp Semiconductor device
JPS5524420A (en) 1978-08-10 1980-02-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulated gate type filed effect transistor
JPS5681972A (en) * 1979-12-07 1981-07-04 Toshiba Corp Mos type field effect transistor
DE3113041A1 (de) 1980-04-01 1982-01-28 Canon K.K., Tokyo Verfahren und vorrichtung zur anzeige von informationen
JPS5787175A (en) 1980-11-19 1982-05-31 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
DE3272410D1 (en) * 1981-02-16 1986-09-11 Fujitsu Ltd Method of producing mosfet type semiconductor device
JPS5823479A (ja) * 1981-08-05 1983-02-12 Fujitsu Ltd 半導体装置の製造方法
JPS5832446A (ja) 1981-08-20 1983-02-25 Sanyo Electric Co Ltd シリサイドの形成方法
JPS5832466A (ja) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd Ｍｏｓｆｅｔの製造方法
JPS5921728B2 (ja) * 1981-11-05 1984-05-22 山口金属株式会社 鋸の製造方法
JPS5891676A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体集積回路装置
JPS58100461A (ja) 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタの製造方法
CA1197926A (en) * 1981-12-16 1985-12-10 William D. Ryden Zero drain overlap and self-aligned contacts and contact methods for mod devices
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US4528480A (en) 1981-12-28 1985-07-09 Nippon Telegraph & Telephone AC Drive type electroluminescent display device
JPH0620122B2 (ja) 1982-01-19 1994-03-16 キヤノン株式会社 半導体素子
JPS58124273A (ja) * 1982-01-20 1983-07-23 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜トランジスタ
JPS58158967A (ja) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜トランジスタ
US4557036A (en) * 1982-03-31 1985-12-10 Nippon Telegraph & Telephone Public Corp. Semiconductor device and process for manufacturing the same
US5365079A (en) 1982-04-30 1994-11-15 Seiko Epson Corporation Thin film transistor and display device including same
US4770498A (en) 1982-07-12 1988-09-13 Hosiden Electronics Co., Ltd. Dot-matrix liquid crystal display
US4470852A (en) 1982-09-03 1984-09-11 Ncr Corporation Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions
JPS59188974A (ja) 1983-04-11 1984-10-26 Nec Corp 半導体装置の製造方法
JPS59214262A (ja) * 1983-05-20 1984-12-04 Hitachi Ltd 絶縁ゲ−ト電界効果トランジスタおよびその製造方法
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
JPS60103676A (ja) 1983-11-11 1985-06-07 Seiko Instr & Electronics Ltd 薄膜トランジスタアレイの製造方法
FR2555364B1 (fr) 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
JPH0658947B2 (ja) 1984-02-24 1994-08-03 株式会社日立製作所 半導体メモリ装置の製法
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4656101A (en) 1984-11-07 1987-04-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device with a protective film
JPS628573A (ja) * 1985-07-04 1987-01-16 Fujitsu Ltd 半導体装置およびその製造方法
JPS62124769A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Ind Co Ltd 密着型イメ−ジセンサ
JPH0777264B2 (ja) 1986-04-02 1995-08-16 三菱電機株式会社 薄膜トランジスタの製造方法
US4692994A (en) 1986-04-29 1987-09-15 Hitachi, Ltd. Process for manufacturing semiconductor devices containing microbridges
US4851363A (en) 1986-07-11 1989-07-25 General Motors Corporation Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
JPH07114184B2 (ja) * 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
JP2786628B2 (ja) 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
JPH01175260A (ja) * 1987-12-29 1989-07-11 Nec Corp 絶縁ゲート電界効果トランジスタの製造方法
GB2215126B (en) * 1988-02-19 1990-11-14 Gen Electric Co Plc Process for manufacturing a thin film transistor
US5258319A (en) 1988-02-19 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a MOS type field effect transistor using an oblique ion implantation step
US4866498A (en) 1988-04-20 1989-09-12 The United States Department Of Energy Integrated circuit with dissipative layer for photogenerated carriers
JPH01276671A (ja) * 1988-04-27 1989-11-07 Seikosha Co Ltd トップスタガー型非晶質シリコン薄膜トランジスタ
JP2653099B2 (ja) 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JPH01291467A (ja) * 1988-05-19 1989-11-24 Toshiba Corp 薄膜トランジスタ
JPH088311B2 (ja) 1988-07-05 1996-01-29 株式会社東芝 紫外線消去型不揮発性半導体記憶装置
JP2752991B2 (ja) * 1988-07-14 1998-05-18 株式会社東芝 半導体装置
US5079605A (en) 1988-07-29 1992-01-07 Texas Instruments Incorporated Silicon-on-insulator transistor with selectable body node to source node connection
US4906587A (en) 1988-07-29 1990-03-06 Texas Instruments Incorporated Making a silicon-on-insulator transistor with selectable body node to source node connection
US5196912A (en) 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
EP0372821B1 (de) 1988-11-30 1995-03-08 Nec Corporation Flüssigkristallanzeigetafel mit verminderten Pixeldefekten
JP2510710B2 (ja) 1988-12-13 1996-06-26 三菱電機株式会社 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ
JP2600929B2 (ja) 1989-01-27 1997-04-16 松下電器産業株式会社 液晶画像表示装置およびその製造方法
US5272361A (en) 1989-06-30 1993-12-21 Semiconductor Energy Laboratory Co., Ltd. Field effect semiconductor device with immunity to hot carrier effects
JP2811762B2 (ja) * 1989-07-04 1998-10-15 セイコーエプソン株式会社 絶縁ゲート型電界効果トランジスタの製造方法
JP3009438B2 (ja) 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
GB2235326A (en) 1989-08-16 1991-02-27 Philips Electronic Associated Active matrix liquid crystal colour display devices
US5270567A (en) 1989-09-06 1993-12-14 Casio Computer Co., Ltd. Thin film transistors without capacitances between electrodes thereof
US5041888A (en) 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
US5177548A (en) 1989-11-09 1993-01-05 Canon Kabushiki Kaisha Image recording apparatus with provision for blank binding space
JPH03190141A (ja) 1989-12-12 1991-08-20 Samsung Electron Devices Co Ltd 平板ディスプレー用薄膜トランジスタ及びその製造方法
US5130772A (en) 1989-12-15 1992-07-14 Samsung Electron Devices Co., Ltd. Thin film transistor with a thin layer of silicon nitride
JPH0787189B2 (ja) 1990-01-19 1995-09-20 松下電器産業株式会社 半導体装置の製造方法
DE69127395T2 (de) 1990-05-11 1998-01-02 Asahi Glass Co Ltd Verfahren zum Herstellen eines Dünnfilm-Transistors mit polykristallinem Halbleiter
US5126283A (en) 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
EP0459763B1 (de) 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Dünnfilmtransistoren
JPH0442579A (ja) 1990-06-08 1992-02-13 Seiko Epson Corp 薄膜トランジスタ及び製造方法
JPH0465168A (ja) 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
JP3039967B2 (ja) 1990-08-03 2000-05-08 株式会社日立製作所 半導体装置
US5112764A (en) 1990-09-04 1992-05-12 North American Philips Corporation Method for the fabrication of low leakage polysilicon thin film transistors
JP3109739B2 (ja) 1990-11-02 2000-11-20 日本ヴィクトリック株式会社 管内面補修継手
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5237188A (en) 1990-11-28 1993-08-17 Kabushiki Kaisha Toshiba Semiconductor device with nitrided gate insulating film
JP2999271B2 (ja) 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
US5225356A (en) 1991-01-14 1993-07-06 Nippon Telegraph & Telephone Corporation Method of making field-effect semiconductor device on sot
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5468987A (en) 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5240868A (en) 1991-04-30 1993-08-31 Samsung Electronics Co., Ltd. Method of fabrication metal-electrode in semiconductor device
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP2717237B2 (ja) 1991-05-16 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5495121A (en) 1991-09-30 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3019885B2 (ja) 1991-11-25 2000-03-13 カシオ計算機株式会社 電界効果型薄膜トランジスタの製造方法
US5422293A (en) 1991-12-24 1995-06-06 Casio Computer Co., Ltd. Method for manufacturing a TFT panel
US5424230A (en) 1992-02-19 1995-06-13 Casio Computer Co., Ltd. Method of manufacturing a polysilicon thin film transistor
TW223178B (en) 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
US5576225A (en) 1992-05-09 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of forming electric circuit using anodic oxidation
DE69327028T2 (de) 1992-09-25 2000-05-31 Sony Corp Flüssigkristall-Anzeigevorrichtung
JP2643833B2 (ja) 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
US5550078A (en) 1995-06-28 1996-08-27 Vanguard International Semiconductor Corp. Reduced mask DRAM process
US5840624A (en) * 1996-03-15 1998-11-24 Taiwan Semiconductor Manufacturing Company, Ltd Reduction of via over etching for borderless contacts
US5930627A (en) 1997-05-05 1999-07-27 Chartered Semiconductor Manufacturing Company, Ltd. Process improvements in self-aligned polysilicon MOSFET technology using silicon oxynitride
US5998249A (en) 1998-05-29 1999-12-07 Taiwan Semiconductor Manufacturing Company Ltd. Static random access memory design and fabrication process featuring dual self-aligned contact structures
US6077738A (en) 1999-06-25 2000-06-20 Taiwan Semiconductor Manufacturing Company Inter-level dielectric planarization approach for a DRAM crown capacitor process

Also Published As

Publication number Publication date
US7569408B1 (en) 2009-08-04
US6822261B2 (en) 2004-11-23
DE69224310D1 (de) 1998-03-12
EP0502749B1 (de) 1998-02-04
KR920018975A (ko) 1992-10-22
EP0502749A2 (de) 1992-09-09
US6323528B1 (en) 2001-11-27
US20020017687A1 (en) 2002-02-14
KR960001611B1 (ko) 1996-02-02
US5289030A (en) 1994-02-22
US5474945A (en) 1995-12-12
EP0502749A3 (en) 1993-05-19

Similar Documents

Publication Publication Date Title
DE69224310T2 (de) Gatestruktur einer Feldeffektanordnung und Verfahren zur Herstellung
DE69221188D1 (de) Feldeffekttransistorstruktur und Verfahren zur Herstellung
DE69316810T2 (de) SiGe-SOI-MOSFET und Verfahren zur Herstellung
DE69220719D1 (de) Handschuhe und Verfahren zur Herstellung
DE69327483D1 (de) Diode und Verfahren zur Herstellung
DE69321184D1 (de) Verfahren zur Herstellung eines Feldeffekttransistors
DE69118511D1 (de) EPROM und Verfahren zur Herstellung
DE69328985T2 (de) Gate-gesteuerte Diode und Verfahren zur Herstellung derselben
DE69213608T2 (de) Verbundwalze und Verfahren zur Herstellung derselben
DE69227722D1 (de) Drehender Dichtungselement und Verfahren zur Herstellung
DE69327416T2 (de) Organischer magnetischer Film und Verfahren zur Herstellung desselben
DE69227556T2 (de) Photomaske und Verfahren zur Herstellung
DE69434736D1 (de) Isolationsstruktur und Verfahren zur Herstellung
DE69123642D1 (de) MESFET und Verfahren zur Herstellung
DE69128406T2 (de) Lateraler MOSFET und Verfahren zur Herstellung
DE69231272D1 (de) Schottky-Dioden-Struktur und Verfahren zur Herstellung
DE69230698T2 (de) Supraleitender Feldeffekttransistor und Verfahren zur Herstellung einer Mehrfachlagenstruktur für diesen Transistor
DE69219197D1 (de) Zusammensetzung zur Schmerzlinderung und Verfahren zur Herstellung
DE69128829T2 (de) Feldeffekttransistor und Verfahren zur Herstellung
DE69220284D1 (de) Magnetkopf und Verfahren zur Herstellung desselben
DE69129453D1 (de) MOSFET-Kanalstruktur und Verfahren zur Herstellung
DE69127165T2 (de) Supraleitende Streifen und Verfahren zur Herstellung
DE69310031D1 (de) Quartzgerät und Verfahren zur Herstellung
DE59307765D1 (de) Nichtlineare Drossel und Verfahren zur Herstellung des Drosselkerns
DE69130877T2 (de) Verfahren zur Herstellung einer Josephson-Vorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee