DE69225373D1 - Sonnenzelle - Google Patents

Sonnenzelle

Info

Publication number
DE69225373D1
DE69225373D1 DE69225373T DE69225373T DE69225373D1 DE 69225373 D1 DE69225373 D1 DE 69225373D1 DE 69225373 T DE69225373 T DE 69225373T DE 69225373 T DE69225373 T DE 69225373T DE 69225373 D1 DE69225373 D1 DE 69225373D1
Authority
DE
Germany
Prior art keywords
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69225373T
Other languages
English (en)
Other versions
DE69225373T2 (de
Inventor
Mitsuyuki Niwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3272092A external-priority patent/JP2908616B2/ja
Priority claimed from JP3272093A external-priority patent/JP2908617B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69225373D1 publication Critical patent/DE69225373D1/de
Publication of DE69225373T2 publication Critical patent/DE69225373T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
DE69225373T 1991-09-24 1992-09-23 Sonnenzelle Expired - Lifetime DE69225373T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3272092A JP2908616B2 (ja) 1991-09-24 1991-09-24 太陽電池
JP3272093A JP2908617B2 (ja) 1991-09-24 1991-09-24 太陽電池

Publications (2)

Publication Number Publication Date
DE69225373D1 true DE69225373D1 (de) 1998-06-10
DE69225373T2 DE69225373T2 (de) 1998-10-22

Family

ID=26550025

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69225373T Expired - Lifetime DE69225373T2 (de) 1991-09-24 1992-09-23 Sonnenzelle

Country Status (4)

Country Link
US (3) US5324365A (de)
EP (1) EP0534416B1 (de)
AU (1) AU650782B2 (de)
DE (1) DE69225373T2 (de)

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US5342452A (en) * 1991-09-25 1994-08-30 Canon Kabushiki Kaisha Photovoltaic device
JP2771414B2 (ja) * 1992-12-28 1998-07-02 キヤノン株式会社 太陽電池の製造方法
JP3029178B2 (ja) * 1994-04-27 2000-04-04 キヤノン株式会社 薄膜半導体太陽電池の製造方法
DE69535967D1 (de) * 1994-10-06 2009-07-30 Kanegafuchi Chemical Ind Dünnschicht-solarzelle
US5824566A (en) * 1995-09-26 1998-10-20 Canon Kabushiki Kaisha Method of producing a photovoltaic device
CA2202430C (en) 1996-04-12 2007-07-03 Junichi Ebisawa Oxide film, laminate and methods for their production
US5849108A (en) * 1996-04-26 1998-12-15 Canon Kabushiki Kaisha Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
US6172296B1 (en) * 1996-05-17 2001-01-09 Canon Kabushiki Kaisha Photovoltaic cell
WO2000022202A1 (fr) * 1998-10-09 2000-04-20 Rohm Co., Ltd. MONOCRISTAL ZnO DE TYPE p ET PROCEDE DE FABRICATION
JP3056200B1 (ja) * 1999-02-26 2000-06-26 鐘淵化学工業株式会社 薄膜光電変換装置の製造方法
JP4126332B2 (ja) * 1999-08-13 2008-07-30 学校法人高知工科大学 低抵抗p型単結晶酸化亜鉛およびその製造方法
JP2001148491A (ja) * 1999-11-19 2001-05-29 Fuji Xerox Co Ltd 光電変換素子
KR100343949B1 (ko) * 2000-01-26 2002-07-24 한국과학기술연구원 상온에서 작동하는 자외선 수광, 발광소자용 ZnO박막의 제조 방법 및 그를 위한 장치
US6852614B1 (en) * 2000-03-24 2005-02-08 University Of Maine Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
GB2361480B (en) 2000-04-19 2002-06-19 Murata Manufacturing Co Method for forming p-type semiconductor film and light emitting device using the same
US20050045851A1 (en) * 2003-08-15 2005-03-03 Konarka Technologies, Inc. Polymer catalyst for photovoltaic cell
JP3904378B2 (ja) * 2000-08-02 2007-04-11 ローム株式会社 酸化亜鉛透明導電膜
WO2002017359A2 (en) * 2000-08-18 2002-02-28 Midwest Research Institute High carrier concentration p-type transparent conducting oxide films
JP4540201B2 (ja) * 2000-09-13 2010-09-08 独立行政法人産業技術総合研究所 ZnO系酸化物半導体層を有する半導体装置の製法
WO2003017333A1 (en) * 2001-08-17 2003-02-27 Midwest Research Institute Method for producing high carrier concentration p-type transparent conducting oxides
US7517784B2 (en) * 2001-08-17 2009-04-14 Alliance For Sustainable Energy, Llc Method for producing high carrier concentration p-Type transparent conducting oxides
US20030049464A1 (en) 2001-09-04 2003-03-13 Afg Industries, Inc. Double silver low-emissivity and solar control coatings
US7318948B1 (en) * 2002-04-30 2008-01-15 United States Of America As Represented By The Secretary Of The Air Force Light transmissive films
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US20040060820A1 (en) * 2002-10-01 2004-04-01 Bressler Vincent Edward Characterization of particles by position in an electric field
JP4241446B2 (ja) * 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
US7109092B2 (en) * 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer
CN1816938A (zh) * 2003-10-06 2006-08-09 日本特殊陶业株式会社 染色敏化型太阳能电池
JP2005158470A (ja) * 2003-11-25 2005-06-16 Ngk Spark Plug Co Ltd 色素増感型太陽電池
US20050133082A1 (en) * 2003-12-20 2005-06-23 Konold Annemarie H. Integrated solar energy roofing construction panel
US20060147616A1 (en) * 2004-12-20 2006-07-06 Russell Gaudiana Polymer catalyst for photovoltaic cell
CN101088168A (zh) * 2004-12-24 2007-12-12 皮雷利&C.有限公司 硅上锗中的光电探测器
JP4699092B2 (ja) * 2005-06-01 2011-06-08 日本パイオニクス株式会社 酸化亜鉛膜の成膜方法
US20080153280A1 (en) * 2006-12-21 2008-06-26 Applied Materials, Inc. Reactive sputter deposition of a transparent conductive film
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7833574B2 (en) * 2007-01-29 2010-11-16 Guardian Industries Corp. Method of making heat treated coated article using diamond-like carbon (DLC) coating and protective film
US7588957B2 (en) * 2007-10-17 2009-09-15 Applied Materials, Inc. CVD process gas flow, pumping and/or boosting
US7687300B2 (en) * 2007-10-22 2010-03-30 Applied Materials, Inc. Method of dynamic temperature control during microcrystalline SI growth
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
US7741144B2 (en) * 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
US8076175B2 (en) 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US20090211623A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
TWI513014B (zh) * 2008-05-19 2015-12-11 Tatung Co 高性能光電元件
US20100200065A1 (en) * 2009-02-12 2010-08-12 Kyu Hyun Choi Photovoltaic Cell and Fabrication Method Thereof
US20100132775A1 (en) * 2009-03-05 2010-06-03 Applied Materials, Inc. Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy
US20110226323A1 (en) * 2009-09-14 2011-09-22 E.I. Du Pont De Nemours And Company Use of thermally stable, flexible inorganic substrate for photovoltaics
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
US8748214B2 (en) * 2009-12-16 2014-06-10 First Solar, Inc. Method of p-type doping of cadmium telluride
US8039290B2 (en) * 2009-12-16 2011-10-18 General Electric Company Method of making photovoltaic cell
US8852994B2 (en) 2010-05-24 2014-10-07 Masimo Semiconductor, Inc. Method of fabricating bifacial tandem solar cells
EP2458393A3 (de) * 2010-08-31 2013-09-25 SCHOTT Solar AG Verfahren zur Bestimmung der Kenngrössen einer photovoltaischen Einrichtung
EP2729968B1 (de) * 2011-07-06 2020-09-02 The Regents of the University of Michigan Integrierte solarkollektoren mit epitaxialschichtanhebung und kaltgeschweisste gebundene halbleitersolarzellen

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JPS55125681A (en) * 1979-03-22 1980-09-27 Sanyo Electric Co Ltd Manufacture of photovoltaic device
JPS5943101B2 (ja) * 1979-11-13 1984-10-19 富士電機株式会社 非晶質半導体太陽電池
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Also Published As

Publication number Publication date
EP0534416A3 (en) 1993-12-29
EP0534416B1 (de) 1998-05-06
DE69225373T2 (de) 1998-10-22
AU2528292A (en) 1993-03-25
EP0534416A2 (de) 1993-03-31
US5420043A (en) 1995-05-30
AU650782B2 (en) 1994-06-30
US5324365A (en) 1994-06-28
US5578501A (en) 1996-11-26

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