DE69225373D1 - Sonnenzelle - Google Patents
SonnenzelleInfo
- Publication number
- DE69225373D1 DE69225373D1 DE69225373T DE69225373T DE69225373D1 DE 69225373 D1 DE69225373 D1 DE 69225373D1 DE 69225373 T DE69225373 T DE 69225373T DE 69225373 T DE69225373 T DE 69225373T DE 69225373 D1 DE69225373 D1 DE 69225373D1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- solar
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3272092A JP2908616B2 (ja) | 1991-09-24 | 1991-09-24 | 太陽電池 |
JP3272093A JP2908617B2 (ja) | 1991-09-24 | 1991-09-24 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69225373D1 true DE69225373D1 (de) | 1998-06-10 |
DE69225373T2 DE69225373T2 (de) | 1998-10-22 |
Family
ID=26550025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69225373T Expired - Lifetime DE69225373T2 (de) | 1991-09-24 | 1992-09-23 | Sonnenzelle |
Country Status (4)
Country | Link |
---|---|
US (3) | US5324365A (de) |
EP (1) | EP0534416B1 (de) |
AU (1) | AU650782B2 (de) |
DE (1) | DE69225373T2 (de) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5342452A (en) * | 1991-09-25 | 1994-08-30 | Canon Kabushiki Kaisha | Photovoltaic device |
JP2771414B2 (ja) * | 1992-12-28 | 1998-07-02 | キヤノン株式会社 | 太陽電池の製造方法 |
JP3029178B2 (ja) * | 1994-04-27 | 2000-04-04 | キヤノン株式会社 | 薄膜半導体太陽電池の製造方法 |
DE69535967D1 (de) * | 1994-10-06 | 2009-07-30 | Kanegafuchi Chemical Ind | Dünnschicht-solarzelle |
US5824566A (en) * | 1995-09-26 | 1998-10-20 | Canon Kabushiki Kaisha | Method of producing a photovoltaic device |
CA2202430C (en) | 1996-04-12 | 2007-07-03 | Junichi Ebisawa | Oxide film, laminate and methods for their production |
US5849108A (en) * | 1996-04-26 | 1998-12-15 | Canon Kabushiki Kaisha | Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction |
US6172296B1 (en) * | 1996-05-17 | 2001-01-09 | Canon Kabushiki Kaisha | Photovoltaic cell |
WO2000022202A1 (fr) * | 1998-10-09 | 2000-04-20 | Rohm Co., Ltd. | MONOCRISTAL ZnO DE TYPE p ET PROCEDE DE FABRICATION |
JP3056200B1 (ja) * | 1999-02-26 | 2000-06-26 | 鐘淵化学工業株式会社 | 薄膜光電変換装置の製造方法 |
JP4126332B2 (ja) * | 1999-08-13 | 2008-07-30 | 学校法人高知工科大学 | 低抵抗p型単結晶酸化亜鉛およびその製造方法 |
JP2001148491A (ja) * | 1999-11-19 | 2001-05-29 | Fuji Xerox Co Ltd | 光電変換素子 |
KR100343949B1 (ko) * | 2000-01-26 | 2002-07-24 | 한국과학기술연구원 | 상온에서 작동하는 자외선 수광, 발광소자용 ZnO박막의 제조 방법 및 그를 위한 장치 |
US6852614B1 (en) * | 2000-03-24 | 2005-02-08 | University Of Maine | Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen |
GB2361480B (en) | 2000-04-19 | 2002-06-19 | Murata Manufacturing Co | Method for forming p-type semiconductor film and light emitting device using the same |
US20050045851A1 (en) * | 2003-08-15 | 2005-03-03 | Konarka Technologies, Inc. | Polymer catalyst for photovoltaic cell |
JP3904378B2 (ja) * | 2000-08-02 | 2007-04-11 | ローム株式会社 | 酸化亜鉛透明導電膜 |
WO2002017359A2 (en) * | 2000-08-18 | 2002-02-28 | Midwest Research Institute | High carrier concentration p-type transparent conducting oxide films |
JP4540201B2 (ja) * | 2000-09-13 | 2010-09-08 | 独立行政法人産業技術総合研究所 | ZnO系酸化物半導体層を有する半導体装置の製法 |
WO2003017333A1 (en) * | 2001-08-17 | 2003-02-27 | Midwest Research Institute | Method for producing high carrier concentration p-type transparent conducting oxides |
US7517784B2 (en) * | 2001-08-17 | 2009-04-14 | Alliance For Sustainable Energy, Llc | Method for producing high carrier concentration p-Type transparent conducting oxides |
US20030049464A1 (en) | 2001-09-04 | 2003-03-13 | Afg Industries, Inc. | Double silver low-emissivity and solar control coatings |
US7318948B1 (en) * | 2002-04-30 | 2008-01-15 | United States Of America As Represented By The Secretary Of The Air Force | Light transmissive films |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
US7189992B2 (en) * | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
US20040060820A1 (en) * | 2002-10-01 | 2004-04-01 | Bressler Vincent Edward | Characterization of particles by position in an electric field |
JP4241446B2 (ja) * | 2003-03-26 | 2009-03-18 | キヤノン株式会社 | 積層型光起電力素子 |
US7109092B2 (en) * | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US7132201B2 (en) * | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
US7129180B2 (en) * | 2003-09-12 | 2006-10-31 | Micron Technology, Inc. | Masking structure having multiple layers including an amorphous carbon layer |
CN1816938A (zh) * | 2003-10-06 | 2006-08-09 | 日本特殊陶业株式会社 | 染色敏化型太阳能电池 |
JP2005158470A (ja) * | 2003-11-25 | 2005-06-16 | Ngk Spark Plug Co Ltd | 色素増感型太陽電池 |
US20050133082A1 (en) * | 2003-12-20 | 2005-06-23 | Konold Annemarie H. | Integrated solar energy roofing construction panel |
US20060147616A1 (en) * | 2004-12-20 | 2006-07-06 | Russell Gaudiana | Polymer catalyst for photovoltaic cell |
CN101088168A (zh) * | 2004-12-24 | 2007-12-12 | 皮雷利&C.有限公司 | 硅上锗中的光电探测器 |
JP4699092B2 (ja) * | 2005-06-01 | 2011-06-08 | 日本パイオニクス株式会社 | 酸化亜鉛膜の成膜方法 |
US20080153280A1 (en) * | 2006-12-21 | 2008-06-26 | Applied Materials, Inc. | Reactive sputter deposition of a transparent conductive film |
US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US7833574B2 (en) * | 2007-01-29 | 2010-11-16 | Guardian Industries Corp. | Method of making heat treated coated article using diamond-like carbon (DLC) coating and protective film |
US7588957B2 (en) * | 2007-10-17 | 2009-09-15 | Applied Materials, Inc. | CVD process gas flow, pumping and/or boosting |
US7687300B2 (en) * | 2007-10-22 | 2010-03-30 | Applied Materials, Inc. | Method of dynamic temperature control during microcrystalline SI growth |
WO2009059240A1 (en) * | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Intrinsic amorphous silicon layer |
US7741144B2 (en) * | 2007-11-02 | 2010-06-22 | Applied Materials, Inc. | Plasma treatment between deposition processes |
US8076175B2 (en) | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
TWI513014B (zh) * | 2008-05-19 | 2015-12-11 | Tatung Co | 高性能光電元件 |
US20100200065A1 (en) * | 2009-02-12 | 2010-08-12 | Kyu Hyun Choi | Photovoltaic Cell and Fabrication Method Thereof |
US20100132775A1 (en) * | 2009-03-05 | 2010-06-03 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
US20110226323A1 (en) * | 2009-09-14 | 2011-09-22 | E.I. Du Pont De Nemours And Company | Use of thermally stable, flexible inorganic substrate for photovoltaics |
US20110088760A1 (en) * | 2009-10-20 | 2011-04-21 | Applied Materials, Inc. | Methods of forming an amorphous silicon layer for thin film solar cell application |
US8748214B2 (en) * | 2009-12-16 | 2014-06-10 | First Solar, Inc. | Method of p-type doping of cadmium telluride |
US8039290B2 (en) * | 2009-12-16 | 2011-10-18 | General Electric Company | Method of making photovoltaic cell |
US8852994B2 (en) | 2010-05-24 | 2014-10-07 | Masimo Semiconductor, Inc. | Method of fabricating bifacial tandem solar cells |
EP2458393A3 (de) * | 2010-08-31 | 2013-09-25 | SCHOTT Solar AG | Verfahren zur Bestimmung der Kenngrössen einer photovoltaischen Einrichtung |
EP2729968B1 (de) * | 2011-07-06 | 2020-09-02 | The Regents of the University of Michigan | Integrierte solarkollektoren mit epitaxialschichtanhebung und kaltgeschweisste gebundene halbleitersolarzellen |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
JP60041878B2 (en) * | 1979-02-14 | 1985-09-19 | Sharp Kk | Thin film solar cell |
JPS55125681A (en) * | 1979-03-22 | 1980-09-27 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
JPS5943101B2 (ja) * | 1979-11-13 | 1984-10-19 | 富士電機株式会社 | 非晶質半導体太陽電池 |
IL67926A (en) * | 1982-03-18 | 1986-04-29 | Energy Conversion Devices Inc | Photo-voltaic device with radiation reflector means |
IN165761B (de) * | 1983-07-28 | 1990-01-06 | Energy Conversion Devices Inc | |
JPS6089573A (ja) * | 1983-10-20 | 1985-05-20 | Ricoh Co Ltd | 透明導電膜 |
US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
US4940495A (en) * | 1988-12-07 | 1990-07-10 | Minnesota Mining And Manufacturing Company | Photovoltaic device having light transmitting electrically conductive stacked films |
US5101260A (en) * | 1989-05-01 | 1992-03-31 | Energy Conversion Devices, Inc. | Multilayer light scattering photovoltaic back reflector and method of making same |
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
US5064477A (en) * | 1990-01-16 | 1991-11-12 | Delahoy Alan E | Radiant energy sensitive device and method |
JP2784841B2 (ja) * | 1990-08-09 | 1998-08-06 | キヤノン株式会社 | 太陽電池用基板 |
US5284525A (en) * | 1990-12-13 | 1994-02-08 | Canon Kabushiki Kaisha | Solar cell |
-
1992
- 1992-09-22 AU AU25282/92A patent/AU650782B2/en not_active Expired
- 1992-09-22 US US07/948,317 patent/US5324365A/en not_active Expired - Lifetime
- 1992-09-23 DE DE69225373T patent/DE69225373T2/de not_active Expired - Lifetime
- 1992-09-23 EP EP92116301A patent/EP0534416B1/de not_active Expired - Lifetime
-
1994
- 1994-02-17 US US08/197,875 patent/US5420043A/en not_active Expired - Lifetime
-
1995
- 1995-03-10 US US08/401,992 patent/US5578501A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0534416A3 (en) | 1993-12-29 |
EP0534416B1 (de) | 1998-05-06 |
DE69225373T2 (de) | 1998-10-22 |
AU2528292A (en) | 1993-03-25 |
EP0534416A2 (de) | 1993-03-31 |
US5420043A (en) | 1995-05-30 |
AU650782B2 (en) | 1994-06-30 |
US5324365A (en) | 1994-06-28 |
US5578501A (en) | 1996-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
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