DE69226021D1 - Treiberschaltung für einen elektronischen Schalter - Google Patents

Treiberschaltung für einen elektronischen Schalter

Info

Publication number
DE69226021D1
DE69226021D1 DE69226021T DE69226021T DE69226021D1 DE 69226021 D1 DE69226021 D1 DE 69226021D1 DE 69226021 T DE69226021 T DE 69226021T DE 69226021 T DE69226021 T DE 69226021T DE 69226021 D1 DE69226021 D1 DE 69226021D1
Authority
DE
Germany
Prior art keywords
driver circuit
electronic switch
switch
electronic
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69226021T
Other languages
English (en)
Other versions
DE69226021T2 (de
Inventor
Luciano Tomasini
Rinaldo Castello
Pierangelo Confalonieri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, SGS Thomson Microelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69226021D1 publication Critical patent/DE69226021D1/de
Application granted granted Critical
Publication of DE69226021T2 publication Critical patent/DE69226021T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
DE69226021T 1992-09-23 1992-09-23 Treiberschaltung für einen elektronischen Schalter Expired - Fee Related DE69226021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92830513A EP0589123B1 (de) 1992-09-23 1992-09-23 Treiberschaltung für einen elektronischen Schalter

Publications (2)

Publication Number Publication Date
DE69226021D1 true DE69226021D1 (de) 1998-07-30
DE69226021T2 DE69226021T2 (de) 1998-10-22

Family

ID=8212178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69226021T Expired - Fee Related DE69226021T2 (de) 1992-09-23 1992-09-23 Treiberschaltung für einen elektronischen Schalter

Country Status (4)

Country Link
US (1) US5552747A (de)
EP (1) EP0589123B1 (de)
JP (1) JPH06216733A (de)
DE (1) DE69226021T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811990A (en) * 1993-10-15 1998-09-22 Micron Technology, Inc. Voltage pump and a level translator circuit
US5719491A (en) * 1995-12-19 1998-02-17 Cherry Semiconductor Corporation Output driver for high-speed device
EP0887931A1 (de) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Schutzschaltung zur Steuerung der Gatterspannung eines Hochspannungs-LDMOS-Transistors
JP4354056B2 (ja) * 1999-10-12 2009-10-28 株式会社 沖マイクロデザイン 半導体集積回路
JP4253318B2 (ja) * 2004-08-06 2009-04-08 株式会社エヌ・ティ・ティ・データ・イー・エックス・テクノ スイッチング手段駆動回路、スイッチング手段の駆動方法、電源装置、及びスイッチング回路
US7449668B2 (en) * 2005-11-14 2008-11-11 General Electric Company Optically powered drive circuit and method for controlling a semiconductor switch
CN102263543B (zh) * 2010-05-26 2015-03-11 上海华虹宏力半导体制造有限公司 电荷泵时钟产生电路
US8493255B2 (en) * 2011-02-24 2013-07-23 Texas Instruments Incorporated High speed, high voltage multiplexer
US9300283B1 (en) 2015-02-18 2016-03-29 Freescale Semiconductor,Inc. Single capacitor, low leakage charge pump
US9362819B1 (en) 2015-08-25 2016-06-07 Freescale Semiconductor, Inc. Single capacitor, controlled output, inverter based positive/negative charge pump
US11626870B1 (en) * 2022-01-11 2023-04-11 Infineon Technologies Austria Ag Gate driver

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1364618A (en) * 1971-12-03 1974-08-21 Seiko Instr & Electronics Voltage boosters
US4583157A (en) * 1985-02-08 1986-04-15 At&T Bell Laboratories Integrated circuit having a variably boosted node
US4736121A (en) * 1985-09-10 1988-04-05 Sos Microelettronica S.p.A. Charge pump circuit for driving N-channel MOS transistors
US4871686A (en) * 1988-03-28 1989-10-03 Motorola, Inc. Integrated Schottky diode and transistor
JPH02220027A (ja) * 1989-02-21 1990-09-03 Seiko Epson Corp 液晶装置の駆動方法
US4972377A (en) * 1989-05-15 1990-11-20 Dallas Semiconductor Corporation Low-voltage low-power static ram
JP3059737B2 (ja) * 1989-12-25 2000-07-04 シャープ株式会社 半導体記憶装置
US5258662A (en) * 1992-04-06 1993-11-02 Linear Technology Corp. Micropower gate charge pump for power MOSFETS
JP2771729B2 (ja) * 1992-04-16 1998-07-02 三菱電機株式会社 チャージポンプ回路
US5264736A (en) * 1992-04-28 1993-11-23 Raytheon Company High frequency resonant gate drive for a power MOSFET
US5276357A (en) * 1992-09-01 1994-01-04 Broadcast Electronics, Inc. High efficiency quasi-square wave drive circuit for switching power amplifiers

Also Published As

Publication number Publication date
EP0589123B1 (de) 1998-06-24
EP0589123A1 (de) 1994-03-30
JPH06216733A (ja) 1994-08-05
US5552747A (en) 1996-09-03
DE69226021T2 (de) 1998-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee