DE69227056T2 - Verfahren zur Fehleranalyse unter Verwendung eines Elektronenstrahles - Google Patents

Verfahren zur Fehleranalyse unter Verwendung eines Elektronenstrahles

Info

Publication number
DE69227056T2
DE69227056T2 DE69227056T DE69227056T DE69227056T2 DE 69227056 T2 DE69227056 T2 DE 69227056T2 DE 69227056 T DE69227056 T DE 69227056T DE 69227056 T DE69227056 T DE 69227056T DE 69227056 T2 DE69227056 T2 DE 69227056T2
Authority
DE
Germany
Prior art keywords
electron beam
analysis method
error analysis
error
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69227056T
Other languages
English (en)
Other versions
DE69227056D1 (de
Inventor
Tohru Tujide
Toyokazu Nakamura
Kiyoshi Nikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69227056D1 publication Critical patent/DE69227056D1/de
Publication of DE69227056T2 publication Critical patent/DE69227056T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
DE69227056T 1991-03-22 1992-03-23 Verfahren zur Fehleranalyse unter Verwendung eines Elektronenstrahles Expired - Fee Related DE69227056T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8118491 1991-03-22
JP8118391 1991-03-22
JP8118291 1991-03-22
JP8118591 1991-03-22

Publications (2)

Publication Number Publication Date
DE69227056D1 DE69227056D1 (de) 1998-10-29
DE69227056T2 true DE69227056T2 (de) 1999-05-12

Family

ID=27466534

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227056T Expired - Fee Related DE69227056T2 (de) 1991-03-22 1992-03-23 Verfahren zur Fehleranalyse unter Verwendung eines Elektronenstrahles

Country Status (3)

Country Link
US (1) US5548211A (de)
EP (1) EP0504944B1 (de)
DE (1) DE69227056T2 (de)

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US5640539A (en) * 1993-09-21 1997-06-17 Advantest Corporation IC analysis system having charged particle beam apparatus for improved contrast image
US6002792A (en) * 1993-11-16 1999-12-14 Hamamatsu Photonics Kk Semiconductor device inspection system
JPH07226426A (ja) * 1994-02-10 1995-08-22 Toshiba Corp 電子ビ−ムテスタ及び電子ビ−ムテスタを使用したテスト方法
JPH07280890A (ja) * 1994-04-08 1995-10-27 Advantest Corp Ｉｃ試験装置並びにそれに使われるイオンビームテスタ及びこの装置を用いたｉｃの不良部分の特定方法
JP3472971B2 (ja) * 1994-07-15 2003-12-02 株式会社アドバンテスト Ｉｃ不良解析方法及び不良解析装置
DE19526194C2 (de) * 1994-07-18 2002-11-07 Advantest Corp Verfahren zur Feststellung eines Fehlers eines ICs unter Verwendung eines Strahls geladener Teilchen
US5747999A (en) * 1994-08-15 1998-05-05 Okano Hitech Co., Ltd. Feed control element used in substrate inspection and method and apparatus for inspecting substrates
JP2900858B2 (ja) * 1995-09-28 1999-06-02 日本電気株式会社 Ｃｍｏｓ論理回路の故障箇所特定方法
US6172363B1 (en) 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
JPH113920A (ja) * 1997-06-12 1999-01-06 Advantest Corp 荷電粒子線装置
US6130428A (en) * 1998-06-02 2000-10-10 Lsi Logic Corporation Laser fault correction of semiconductor devices
US6448802B1 (en) * 1998-12-21 2002-09-10 Intel Corporation Photosensors for testing an integrated circuit
US6539106B1 (en) * 1999-01-08 2003-03-25 Applied Materials, Inc. Feature-based defect detection
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
KR100546289B1 (ko) 1999-04-23 2006-01-26 삼성전자주식회사 전자빔 검사 장치를 이용한 콘택홀의 인라인 모니터링 방법
JP2000314710A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 回路パターンの検査方法及び検査装置
KR100351059B1 (ko) * 2000-11-23 2002-09-05 삼성전자 주식회사 반도체 소자의 전기적 결함 검사 장치, 이를 이용한 반도체 소자의 전기적 결함 검사 방법
US6545491B2 (en) 1999-08-27 2003-04-08 Samsung Electronics Co., Ltd. Apparatus for detecting defects in semiconductor devices and methods of using the same
US6411111B1 (en) * 2000-05-15 2002-06-25 National Semiconductor Corporation Electron-electro-optical debug system E2ODS
US6872581B2 (en) * 2001-04-16 2005-03-29 Nptest, Inc. Measuring back-side voltage of an integrated circuit
US6732002B1 (en) * 2001-08-23 2004-05-04 Kla-Tencor Corporation Apparatus and methods for predicting multiple product chip yields through critical area matching
US7280945B1 (en) 2001-10-17 2007-10-09 Kla-Tencor Technologies Corporation Apparatus and methods for detection of systematic defects
US6918101B1 (en) 2001-10-25 2005-07-12 Kla -Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
US6948141B1 (en) 2001-10-25 2005-09-20 Kla-Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
US7036109B1 (en) 2002-10-17 2006-04-25 Credence Systems Corporation Imaging integrated circuits with focused ion beam
JP4314823B2 (ja) * 2003-01-08 2009-08-19 ブラザー工業株式会社 接続不良検出装置
US7068049B2 (en) * 2003-08-05 2006-06-27 Agilent Technologies, Inc. Method and apparatus for measuring a device under test using an improved through-reflect-line measurement calibration
JP4683869B2 (ja) * 2004-07-08 2011-05-18 独立行政法人理化学研究所 半導体デバイスの故障診断方法と装置
CN101520654B (zh) * 2008-02-25 2012-01-25 中芯国际集成电路制造(上海)有限公司 用于设限截断生产数据的统计过程控制的方法和计算机代码
CN101988910B (zh) * 2009-08-04 2012-05-09 中芯国际集成电路制造(上海)有限公司 芯片级互连线缺陷分析方法
CN103837823A (zh) * 2014-03-17 2014-06-04 上海华虹宏力半导体制造有限公司 产品测试电路
US9772366B2 (en) * 2015-02-26 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Circuits and methods of testing a device under test using the same
US10578669B2 (en) * 2017-07-10 2020-03-03 Deny Hanan Portable device for soft errors testing

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US4358732A (en) * 1979-05-14 1982-11-09 California Institute Of Technology Synchronized voltage contrast display analysis system
JPS58201185A (ja) * 1982-05-19 1983-11-22 Toshiba Corp 位置検出装置
US4692690A (en) * 1983-12-26 1987-09-08 Hitachi, Ltd. Pattern detecting apparatus
SE452526B (sv) * 1984-05-09 1987-11-30 Stiftelsen Inst Mikrovags Forfarande for att inspektera integrerade kretsar eller andra objekt
EP0166814B1 (de) * 1984-05-30 1990-07-18 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Detektion und Abbildung eines Messpunkts, der eine Spannung wenigstens einer bestimmten Frequenz führt
US4721909A (en) * 1985-08-16 1988-01-26 Schlumberger Technology Corporation Apparatus for pulsing electron beams
US4706019A (en) * 1985-11-15 1987-11-10 Fairchild Camera And Instrument Corporation Electron beam test probe system for analyzing integrated circuits
EP0226913A3 (de) * 1985-12-17 1988-10-05 Siemens Aktiengesellschaft Verfahren und Anordnung zur Lokalisierung und/oder Abbildung der ein bestimmtes zeitabhängiges Signal führenden Punkte einer Probe
DE3602366A1 (de) * 1986-01-27 1987-07-30 Siemens Ag Verfahren und anordnung zum nachweis der auf einer probe von einem primaeren korpuskularstrahl ausgeloesten sekundaerkorpuskeln
US4805123B1 (en) * 1986-07-14 1998-10-13 Kla Instr Corp Automatic photomask and reticle inspection method and apparatus including improved defect detector and alignment sub-systems
US4965515A (en) * 1986-10-15 1990-10-23 Tokyo Electron Limited Apparatus and method of testing a semiconductor wafer
US4870357A (en) * 1988-06-03 1989-09-26 Apple Computer, Inc. LCD error detection system
US5054097A (en) * 1988-11-23 1991-10-01 Schlumberger Technologies, Inc. Methods and apparatus for alignment of images
US4978908A (en) * 1989-03-22 1990-12-18 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus

Also Published As

Publication number Publication date
US5548211A (en) 1996-08-20
EP0504944A3 (en) 1993-11-24
DE69227056D1 (de) 1998-10-29
EP0504944B1 (de) 1998-09-23
EP0504944A2 (de) 1992-09-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee