DE69227856D1 - Halbleitervorrichtung mit niedrigen thermischen Spannungen - Google Patents

Halbleitervorrichtung mit niedrigen thermischen Spannungen

Info

Publication number
DE69227856D1
DE69227856D1 DE69227856T DE69227856T DE69227856D1 DE 69227856 D1 DE69227856 D1 DE 69227856D1 DE 69227856 T DE69227856 T DE 69227856T DE 69227856 T DE69227856 T DE 69227856T DE 69227856 D1 DE69227856 D1 DE 69227856D1
Authority
DE
Germany
Prior art keywords
semiconductor device
thermal stress
low thermal
stress semiconductor
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69227856T
Other languages
English (en)
Inventor
Leo M Higgins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69227856D1 publication Critical patent/DE69227856D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/564Details not otherwise provided for, e.g. protection against moisture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738Semiconductor materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
DE69227856T 1991-04-08 1992-03-30 Halbleitervorrichtung mit niedrigen thermischen Spannungen Expired - Lifetime DE69227856D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/681,608 US5173764A (en) 1991-04-08 1991-04-08 Semiconductor device having a particular lid means and encapsulant to reduce die stress

Publications (1)

Publication Number Publication Date
DE69227856D1 true DE69227856D1 (de) 1999-01-28

Family

ID=24736025

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227856T Expired - Lifetime DE69227856D1 (de) 1991-04-08 1992-03-30 Halbleitervorrichtung mit niedrigen thermischen Spannungen

Country Status (5)

Country Link
US (1) US5173764A (de)
EP (1) EP0508266B1 (de)
JP (1) JP3171652B2 (de)
KR (1) KR920020653A (de)
DE (1) DE69227856D1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319242A (en) * 1992-03-18 1994-06-07 Motorola, Inc. Semiconductor package having an exposed die surface
US5249101A (en) * 1992-07-06 1993-09-28 International Business Machines Corporation Chip carrier with protective coating for circuitized surface
JP2670408B2 (ja) * 1992-10-27 1997-10-29 株式会社東芝 樹脂封止型半導体装置及びその製造方法
US5339216A (en) * 1993-03-02 1994-08-16 National Semiconductor Corporation Device and method for reducing thermal cycling in a semiconductor package
US5834339A (en) 1996-03-07 1998-11-10 Tessera, Inc. Methods for providing void-free layers for semiconductor assemblies
JPH0831988A (ja) * 1994-07-20 1996-02-02 Nec Corp テープキャリアパッケージの封止構造
US6002181A (en) * 1994-11-08 1999-12-14 Oki Electric Industry Co., Ltd. Structure of resin molded type semiconductor device with embedded thermal dissipator
US5866953A (en) * 1996-05-24 1999-02-02 Micron Technology, Inc. Packaged die on PCB with heat sink encapsulant
US6252302B1 (en) * 1996-09-19 2001-06-26 Warren M. Farnworth Heat transfer material for an improved die edge contacting socket
TW392262B (en) 1997-03-10 2000-06-01 Seiko Epson Corp Electric parts and semiconductor device and the manufacturing method thereof, and the assembled circuit board, and the electric device using the same
US7233056B1 (en) * 1998-02-23 2007-06-19 Micron Technology, Inc. Chip scale package with heat spreader
US6314639B1 (en) 1998-02-23 2001-11-13 Micron Technology, Inc. Chip scale package with heat spreader and method of manufacture
US6297960B1 (en) 1998-06-30 2001-10-02 Micron Technology, Inc. Heat sink with alignment and retaining features
US6297548B1 (en) * 1998-06-30 2001-10-02 Micron Technology, Inc. Stackable ceramic FBGA for high thermal applications
US6326687B1 (en) 1998-09-01 2001-12-04 Micron Technology, Inc. IC package with dual heat spreaders
US6117797A (en) 1998-09-03 2000-09-12 Micron Technology, Inc. Attachment method for heat sinks and devices involving removal of misplaced encapsulant
FR2788882A1 (fr) * 1999-01-27 2000-07-28 Schlumberger Systems & Service Dispositif a circuits integres, module electronique pour carte a puce utilisant le dispositif et procede de fabrication dudit dispositif
US6570245B1 (en) 2000-03-09 2003-05-27 Intel Corporation Stress shield for microelectronic dice
JP3727587B2 (ja) * 2001-12-28 2005-12-14 シャープ株式会社 半導体装置の実装方法
US8067823B2 (en) * 2004-11-15 2011-11-29 Stats Chippac, Ltd. Chip scale package having flip chip interconnect on die paddle
JP4548264B2 (ja) * 2005-08-01 2010-09-22 株式会社デンソー 車両用交流発電機
US8502371B2 (en) * 2007-12-27 2013-08-06 Stats Chippac Ltd. Integrated circuit package system with extended corner leads
SG142321A1 (en) * 2008-04-24 2009-11-26 Micron Technology Inc Pre-encapsulated cavity interposer
US8072047B2 (en) * 2008-05-21 2011-12-06 Stats Chippac Ltd. Integrated circuit package system with shield and tie bar
US20100110656A1 (en) 2008-10-31 2010-05-06 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
TWI540698B (zh) 2010-08-02 2016-07-01 日月光半導體製造股份有限公司 半導體封裝件與其製造方法
US8704341B2 (en) 2012-05-15 2014-04-22 Advanced Semiconductor Engineering, Inc. Semiconductor packages with thermal dissipation structures and EMI shielding
US8653634B2 (en) 2012-06-11 2014-02-18 Advanced Semiconductor Engineering, Inc. EMI-shielded semiconductor devices and methods of making
US8815725B2 (en) 2013-01-18 2014-08-26 International Business Machines Corporation Low alpha particle emission electrically-conductive coating
US9824995B2 (en) 2014-09-29 2017-11-21 Nxp Usa, Inc. Flexible circuit leads in packaging for radio frequency devices
JP7264391B2 (ja) * 2018-07-11 2023-04-25 北川工業株式会社 熱伝導組成物
US10643957B2 (en) 2018-08-27 2020-05-05 Nxp B.V. Conformal dummy die

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
US4712129A (en) * 1983-12-12 1987-12-08 Texas Instruments Incorporated Integrated circuit device with textured bar cover
JPS61248541A (ja) * 1985-04-26 1986-11-05 Matsushita Electronics Corp 半導体装置
JPS63302542A (ja) * 1987-06-02 1988-12-09 Seiko Epson Corp 半導体装置
JPS63302543A (ja) * 1987-06-02 1988-12-09 Seiko Epson Corp 半導体装置
JPH0740031B2 (ja) * 1987-09-11 1995-05-01 株式会社シノテスト 免疫学的測定方法

Also Published As

Publication number Publication date
JPH05129456A (ja) 1993-05-25
KR920020653A (ko) 1992-11-21
US5173764A (en) 1992-12-22
JP3171652B2 (ja) 2001-05-28
EP0508266B1 (de) 1998-12-16
EP0508266A1 (de) 1992-10-14

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