DE69229437T2 - Nicht-flüchtiger Halbleiterspeicher - Google Patents

Nicht-flüchtiger Halbleiterspeicher

Info

Publication number
DE69229437T2
DE69229437T2 DE69229437T DE69229437T DE69229437T2 DE 69229437 T2 DE69229437 T2 DE 69229437T2 DE 69229437 T DE69229437 T DE 69229437T DE 69229437 T DE69229437 T DE 69229437T DE 69229437 T2 DE69229437 T2 DE 69229437T2
Authority
DE
Germany
Prior art keywords
arrangement
sense amplifiers
voltage
read
cell transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229437T
Other languages
English (en)
Other versions
DE69229437D1 (de
Inventor
Takao Akaogi
Masanobu Yoshida
Shouichi Kawamura
Yasushi Kasa
Yasushige Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3346663A external-priority patent/JP2732471B2/ja
Priority claimed from JP13708092A external-priority patent/JPH05334882A/ja
Priority claimed from JP19179392A external-priority patent/JPH0636581A/ja
Priority claimed from JP24802392A external-priority patent/JP3221929B2/ja
Priority claimed from JP27186992A external-priority patent/JPH06124597A/ja
Priority claimed from JP27435592A external-priority patent/JPH06124595A/ja
Priority claimed from JP32430292A external-priority patent/JP3544678B2/ja
Priority claimed from JP32554492A external-priority patent/JP3162214B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69229437D1 publication Critical patent/DE69229437D1/de
Publication of DE69229437T2 publication Critical patent/DE69229437T2/de
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
DE69229437T 1991-12-27 1992-12-29 Nicht-flüchtiger Halbleiterspeicher Expired - Fee Related DE69229437T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP3346663A JP2732471B2 (ja) 1991-12-27 1991-12-27 不揮発性半導体記憶装置
JP13708092A JPH05334882A (ja) 1992-05-28 1992-05-28 不揮発性半導体記憶装置
JP19179392A JPH0636581A (ja) 1992-07-20 1992-07-20 半導体記憶装置
JP24802392A JP3221929B2 (ja) 1992-09-17 1992-09-17 半導体装置
JP27186992A JPH06124597A (ja) 1992-10-09 1992-10-09 不揮発性半導体記憶装置
JP27435592A JPH06124595A (ja) 1992-10-13 1992-10-13 フラッシュ・メモリ
JP32430292A JP3544678B2 (ja) 1992-12-03 1992-12-03 半導体記憶装置
JP32554492A JP3162214B2 (ja) 1992-12-04 1992-12-04 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69229437D1 DE69229437D1 (de) 1999-07-22
DE69229437T2 true DE69229437T2 (de) 1999-10-07

Family

ID=27573162

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229437T Expired - Fee Related DE69229437T2 (de) 1991-12-27 1992-12-29 Nicht-flüchtiger Halbleiterspeicher

Country Status (4)

Country Link
US (5) US5490107A (de)
EP (1) EP0549374B1 (de)
KR (1) KR960000619B1 (de)
DE (1) DE69229437T2 (de)

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Also Published As

Publication number Publication date
EP0549374A3 (en) 1996-05-22
US5490107A (en) 1996-02-06
KR960000619B1 (ko) 1996-01-10
US5572463A (en) 1996-11-05
DE69229437D1 (de) 1999-07-22
KR930014613A (ko) 1993-07-23
EP0549374A2 (de) 1993-06-30
US5590074A (en) 1996-12-31
US5537356A (en) 1996-07-16
US5487036A (en) 1996-01-23
EP0549374B1 (de) 1999-06-16

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