DE69230552T2 - Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung - Google Patents

Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung

Info

Publication number
DE69230552T2
DE69230552T2 DE69230552T DE69230552T DE69230552T2 DE 69230552 T2 DE69230552 T2 DE 69230552T2 DE 69230552 T DE69230552 T DE 69230552T DE 69230552 T DE69230552 T DE 69230552T DE 69230552 T2 DE69230552 T2 DE 69230552T2
Authority
DE
Germany
Prior art keywords
light emitting
emitting devices
semiconductor quantum
quantum confinement
confinement light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69230552T
Other languages
English (en)
Other versions
DE69230552D1 (de
Inventor
Nicholas K Sheridon
David K Biegelsen
Noble M Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69230552D1 publication Critical patent/DE69230552D1/de
Application granted granted Critical
Publication of DE69230552T2 publication Critical patent/DE69230552T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H01L33/346—Materials of the light emitting region containing only elements of group IV of the periodic system containing porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
DE69230552T 1991-10-28 1992-10-26 Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung Expired - Lifetime DE69230552T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78394591A 1991-10-28 1991-10-28

Publications (2)

Publication Number Publication Date
DE69230552D1 DE69230552D1 (de) 2000-02-17
DE69230552T2 true DE69230552T2 (de) 2000-08-10

Family

ID=25130900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69230552T Expired - Lifetime DE69230552T2 (de) 1991-10-28 1992-10-26 Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung

Country Status (4)

Country Link
US (1) US5607876A (de)
EP (1) EP0544408B1 (de)
JP (1) JP3243303B2 (de)
DE (1) DE69230552T2 (de)

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Also Published As

Publication number Publication date
US5607876A (en) 1997-03-04
DE69230552D1 (de) 2000-02-17
EP0544408A2 (de) 1993-06-02
JP3243303B2 (ja) 2002-01-07
EP0544408A3 (en) 1993-10-27
EP0544408B1 (de) 2000-01-12
JPH05218499A (ja) 1993-08-27

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