FR2681472B1
(fr)
*
|
1991-09-18 |
1993-10-29 |
Commissariat Energie Atomique |
Procede de fabrication de films minces de materiau semiconducteur.
|
US5719065A
(en)
|
1993-10-01 |
1998-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device with removable spacers
|
FR2714524B1
(fr)
*
|
1993-12-23 |
1996-01-26 |
Commissariat Energie Atomique |
Procede de realisation d'une structure en relief sur un support en materiau semiconducteur
|
FR2715501B1
(fr)
*
|
1994-01-26 |
1996-04-05 |
Commissariat Energie Atomique |
Procédé de dépôt de lames semiconductrices sur un support.
|
FR2715503B1
(fr)
*
|
1994-01-26 |
1996-04-05 |
Commissariat Energie Atomique |
Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
|
FR2715502B1
(fr)
*
|
1994-01-26 |
1996-04-05 |
Commissariat Energie Atomique |
Structure présentant des cavités et procédé de réalisation d'une telle structure.
|
US20030087503A1
(en)
*
|
1994-03-10 |
2003-05-08 |
Canon Kabushiki Kaisha |
Process for production of semiconductor substrate
|
US7148119B1
(en)
|
1994-03-10 |
2006-12-12 |
Canon Kabushiki Kaisha |
Process for production of semiconductor substrate
|
JP3293736B2
(ja)
|
1996-02-28 |
2002-06-17 |
キヤノン株式会社 |
半導体基板の作製方法および貼り合わせ基体
|
FR2725074B1
(fr)
|
1994-09-22 |
1996-12-20 |
Commissariat Energie Atomique |
Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
|
EP0703608B1
(de)
*
|
1994-09-23 |
1998-02-25 |
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe |
Verfahren zur Herstellung begrabener Oxidschichten in einem Silizium-Wafer
|
FR2726935B1
(fr)
*
|
1994-11-10 |
1996-12-13 |
Commissariat Energie Atomique |
Dispositif a memoire non-volatile electriquement effacable et procede de realisation d'un tel dispositif
|
KR970013008A
(ko)
*
|
1995-08-30 |
1997-03-29 |
윤덕용 |
Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법
|
FR2738671B1
(fr)
*
|
1995-09-13 |
1997-10-10 |
Commissariat Energie Atomique |
Procede de fabrication de films minces a materiau semiconducteur
|
CN1132223C
(zh)
|
1995-10-06 |
2003-12-24 |
佳能株式会社 |
半导体衬底及其制造方法
|
FR2744285B1
(fr)
*
|
1996-01-25 |
1998-03-06 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince d'un substrat initial sur un substrat final
|
TW374196B
(en)
*
|
1996-02-23 |
1999-11-11 |
Semiconductor Energy Lab Co Ltd |
Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
|
FR2746919B1
(fr)
*
|
1996-03-28 |
1998-04-24 |
Commissariat Energie Atomique |
Capteur a jauge de contrainte utilisant l'effet piezoresistif et son procede de fabrication
|
FR2747506B1
(fr)
*
|
1996-04-11 |
1998-05-15 |
Commissariat Energie Atomique |
Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques
|
EP0801427A3
(de)
*
|
1996-04-11 |
1999-05-06 |
Matsushita Electric Industrial Co., Ltd. |
Feldeffekttransistor, Halbleiter-Speicheranordnung, Verfahren zur Herstellung und Verfahren zum Steuern der Halbleiter-Speicheranordnung
|
FR2748851B1
(fr)
*
|
1996-05-15 |
1998-08-07 |
Commissariat Energie Atomique |
Procede de realisation d'une couche mince de materiau semiconducteur
|
FR2748850B1
(fr)
*
|
1996-05-15 |
1998-07-24 |
Commissariat Energie Atomique |
Procede de realisation d'un film mince de materiau solide et applications de ce procede
|
US5972780A
(en)
*
|
1996-08-22 |
1999-10-26 |
Nippon Telegraph Telephone Corporation |
Thin film forming apparatus and method
|
JP4619644B2
(ja)
*
|
1996-08-27 |
2011-01-26 |
セイコーエプソン株式会社 |
薄膜素子の転写方法
|
JP4619462B2
(ja)
*
|
1996-08-27 |
2011-01-26 |
セイコーエプソン株式会社 |
薄膜素子の転写方法
|
JP4619645B2
(ja)
*
|
1996-08-27 |
2011-01-26 |
セイコーエプソン株式会社 |
薄膜素子の転写方法
|
FR2752768B1
(fr)
*
|
1996-08-27 |
2003-04-11 |
Commissariat Energie Atomique |
Procede d'obtention d'une plaquette de materiau semiconducteur de grandes dimensions et utilisation de la plaquette obtenue pour realiser des substrats du type semiconducteur sur isolant
|
JP4619461B2
(ja)
*
|
1996-08-27 |
2011-01-26 |
セイコーエプソン株式会社 |
薄膜デバイスの転写方法、及びデバイスの製造方法
|
US8058142B2
(en)
*
|
1996-11-04 |
2011-11-15 |
Besang Inc. |
Bonded semiconductor structure and method of making the same
|
US20050280155A1
(en)
*
|
2004-06-21 |
2005-12-22 |
Sang-Yun Lee |
Semiconductor bonding and layer transfer method
|
US8018058B2
(en)
*
|
2004-06-21 |
2011-09-13 |
Besang Inc. |
Semiconductor memory device
|
FR2755537B1
(fr)
*
|
1996-11-05 |
1999-03-05 |
Commissariat Energie Atomique |
Procede de fabrication d'un film mince sur un support et structure ainsi obtenue
|
SG65697A1
(en)
*
|
1996-11-15 |
1999-06-22 |
Canon Kk |
Process for producing semiconductor article
|
US6054363A
(en)
*
|
1996-11-15 |
2000-04-25 |
Canon Kabushiki Kaisha |
Method of manufacturing semiconductor article
|
CA2220600C
(en)
*
|
1996-11-15 |
2002-02-12 |
Canon Kabushiki Kaisha |
Method of manufacturing semiconductor article
|
KR100232886B1
(ko)
*
|
1996-11-23 |
1999-12-01 |
김영환 |
Soi 웨이퍼 제조방법
|
FR2756847B1
(fr)
|
1996-12-09 |
1999-01-08 |
Commissariat Energie Atomique |
Procede de separation d'au moins deux elements d'une structure en contact entre eux par implantation ionique
|
FR2756973B1
(fr)
*
|
1996-12-09 |
1999-01-08 |
Commissariat Energie Atomique |
Procede d'introduction d'une phase gazeuse dans une cavite fermee
|
US5789310A
(en)
*
|
1996-12-10 |
1998-08-04 |
Advanced Micro Devices, Inc. |
Method of forming shallow junctions by entrapment of interstitial atoms
|
SG67458A1
(en)
*
|
1996-12-18 |
1999-09-21 |
Canon Kk |
Process for producing semiconductor article
|
US6756289B1
(en)
|
1996-12-27 |
2004-06-29 |
Canon Kabushiki Kaisha |
Method of producing semiconductor member and method of producing solar cell
|
EP0851513B1
(de)
|
1996-12-27 |
2007-11-21 |
Canon Kabushiki Kaisha |
Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle
|
FR2758907B1
(fr)
*
|
1997-01-27 |
1999-05-07 |
Commissariat Energie Atomique |
Procede d'obtention d'un film mince, notamment semiconducteur, comportant une zone protegee des ions, et impliquant une etape d'implantation ionique
|
CA2232796C
(en)
*
|
1997-03-26 |
2002-01-22 |
Canon Kabushiki Kaisha |
Thin film forming process
|
CA2233096C
(en)
|
1997-03-26 |
2003-01-07 |
Canon Kabushiki Kaisha |
Substrate and production method thereof
|
SG71094A1
(en)
*
|
1997-03-26 |
2000-03-21 |
Canon Kk |
Thin film formation using laser beam heating to separate layers
|
SG68035A1
(en)
*
|
1997-03-27 |
1999-10-19 |
Canon Kk |
Method and apparatus for separating composite member using fluid
|
CA2233115C
(en)
*
|
1997-03-27 |
2002-03-12 |
Canon Kabushiki Kaisha |
Semiconductor substrate and method of manufacturing the same
|
US6551857B2
(en)
|
1997-04-04 |
2003-04-22 |
Elm Technology Corporation |
Three dimensional structure integrated circuits
|
US5915167A
(en)
*
|
1997-04-04 |
1999-06-22 |
Elm Technology Corporation |
Three dimensional structure memory
|
US6191007B1
(en)
*
|
1997-04-28 |
2001-02-20 |
Denso Corporation |
Method for manufacturing a semiconductor substrate
|
US6251754B1
(en)
*
|
1997-05-09 |
2001-06-26 |
Denso Corporation |
Semiconductor substrate manufacturing method
|
US6291313B1
(en)
|
1997-05-12 |
2001-09-18 |
Silicon Genesis Corporation |
Method and device for controlled cleaving process
|
US8835282B2
(en)
*
|
1997-05-12 |
2014-09-16 |
Silicon Genesis Corporation |
Controlled process and resulting device
|
US6033974A
(en)
|
1997-05-12 |
2000-03-07 |
Silicon Genesis Corporation |
Method for controlled cleaving process
|
US20070122997A1
(en)
|
1998-02-19 |
2007-05-31 |
Silicon Genesis Corporation |
Controlled process and resulting device
|
JP2001525991A
(ja)
*
|
1997-05-12 |
2001-12-11 |
シリコン・ジェネシス・コーポレーション |
制御された劈開プロセス
|
US6155909A
(en)
|
1997-05-12 |
2000-12-05 |
Silicon Genesis Corporation |
Controlled cleavage system using pressurized fluid
|
US6027988A
(en)
*
|
1997-05-28 |
2000-02-22 |
The Regents Of The University Of California |
Method of separating films from bulk substrates by plasma immersion ion implantation
|
US5877070A
(en)
*
|
1997-05-31 |
1999-03-02 |
Max-Planck Society |
Method for the transfer of thin layers of monocrystalline material to a desirable substrate
|
US6150239A
(en)
*
|
1997-05-31 |
2000-11-21 |
Max Planck Society |
Method for the transfer of thin layers monocrystalline material onto a desirable substrate
|
JP3535527B2
(ja)
|
1997-06-24 |
2004-06-07 |
マサチューセッツ インスティテュート オブ テクノロジー |
傾斜GeSi層と平坦化を用いたゲルマニウム・オン・シリコンの貫通転位の制御
|
US5949108A
(en)
*
|
1997-06-30 |
1999-09-07 |
Intel Corporation |
Semiconductor device with reduced capacitance
|
US6054369A
(en)
*
|
1997-06-30 |
2000-04-25 |
Intersil Corporation |
Lifetime control for semiconductor devices
|
DE69733471D1
(de)
*
|
1997-07-03 |
2005-07-14 |
St Microelectronics Srl |
Verfahren zur Herstellung von Geräten in einem halbleitenden Substrat
|
US6548382B1
(en)
|
1997-07-18 |
2003-04-15 |
Silicon Genesis Corporation |
Gettering technique for wafers made using a controlled cleaving process
|
US6534380B1
(en)
*
|
1997-07-18 |
2003-03-18 |
Denso Corporation |
Semiconductor substrate and method of manufacturing the same
|
FR2766620B1
(fr)
*
|
1997-07-22 |
2000-12-01 |
Commissariat Energie Atomique |
Realisation de microstructures ou de nanostructures sur un support
|
US6103599A
(en)
*
|
1997-07-25 |
2000-08-15 |
Silicon Genesis Corporation |
Planarizing technique for multilayered substrates
|
FR2767416B1
(fr)
*
|
1997-08-12 |
1999-10-01 |
Commissariat Energie Atomique |
Procede de fabrication d'un film mince de materiau solide
|
US5882987A
(en)
*
|
1997-08-26 |
1999-03-16 |
International Business Machines Corporation |
Smart-cut process for the production of thin semiconductor material films
|
JP3327180B2
(ja)
|
1997-08-29 |
2002-09-24 |
信越半導体株式会社 |
Soi層上酸化膜の形成方法ならびに結合ウエーハの製造方法およびこの方法で製造される結合ウエーハ
|
JP3324469B2
(ja)
*
|
1997-09-26 |
2002-09-17 |
信越半導体株式会社 |
Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ
|
US5920764A
(en)
*
|
1997-09-30 |
1999-07-06 |
International Business Machines Corporation |
Process for restoring rejected wafers in line for reuse as new
|
JP2998724B2
(ja)
*
|
1997-11-10 |
2000-01-11 |
日本電気株式会社 |
張り合わせsoi基板の製造方法
|
DE19750167B4
(de)
*
|
1997-11-12 |
2006-08-31 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Verfahren zur Herstellung integrierter Schaltkreise
|
US6686623B2
(en)
|
1997-11-18 |
2004-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Nonvolatile memory and electronic apparatus
|
US6232142B1
(en)
|
1997-12-09 |
2001-05-15 |
Seiko Epson Corporation |
Semiconductor device and method for making the same, electro-optical device using the same and method for making the electro-optical device, and electronic apparatus using the electro-optical device
|
FR2773261B1
(fr)
|
1997-12-30 |
2000-01-28 |
Commissariat Energie Atomique |
Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
|
US6413874B1
(en)
*
|
1997-12-26 |
2002-07-02 |
Canon Kabushiki Kaisha |
Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
|
SG70141A1
(en)
*
|
1997-12-26 |
2000-01-25 |
Canon Kk |
Sample separating apparatus and method and substrate manufacturing method
|
US6171982B1
(en)
|
1997-12-26 |
2001-01-09 |
Canon Kabushiki Kaisha |
Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
|
JP4075021B2
(ja)
*
|
1997-12-26 |
2008-04-16 |
ソニー株式会社 |
半導体基板の製造方法および薄膜半導体部材の製造方法
|
JP4323577B2
(ja)
|
1997-12-26 |
2009-09-02 |
キヤノン株式会社 |
分離方法および半導体基板の製造方法
|
US6071795A
(en)
*
|
1998-01-23 |
2000-06-06 |
The Regents Of The University Of California |
Separation of thin films from transparent substrates by selective optical processing
|
FR2774214B1
(fr)
|
1998-01-28 |
2002-02-08 |
Commissariat Energie Atomique |
PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
|
SG71903A1
(en)
|
1998-01-30 |
2000-04-18 |
Canon Kk |
Process of reclamation of soi substrate and reproduced substrate
|
FR2774511B1
(fr)
*
|
1998-01-30 |
2002-10-11 |
Commissariat Energie Atomique |
Substrat compliant en particulier pour un depot par hetero-epitaxie
|
FR2774510B1
(fr)
|
1998-02-02 |
2001-10-26 |
Soitec Silicon On Insulator |
Procede de traitement de substrats, notamment semi-conducteurs
|
DE69917819T2
(de)
|
1998-02-04 |
2005-06-23 |
Canon K.K. |
SOI Substrat
|
FR2775121B1
(fr)
*
|
1998-02-13 |
2000-05-05 |
Picogiga Sa |
Procede de fabrication de substrats en film mince de materiau semiconducteur, structures epitaxiales de materiau semiconducteur formees sur de tels substrats, et composants obtenus a partir de ces structures
|
US6120597A
(en)
*
|
1998-02-17 |
2000-09-19 |
The Trustees Of Columbia University In The City Of New York |
Crystal ion-slicing of single-crystal films
|
US6274459B1
(en)
*
|
1998-02-17 |
2001-08-14 |
Silicon Genesis Corporation |
Method for non mass selected ion implant profile control
|
US6540827B1
(en)
|
1998-02-17 |
2003-04-01 |
Trustees Of Columbia University In The City Of New York |
Slicing of single-crystal films using ion implantation
|
US6083324A
(en)
*
|
1998-02-19 |
2000-07-04 |
Silicon Genesis Corporation |
Gettering technique for silicon-on-insulator wafers
|
US6365488B1
(en)
*
|
1998-03-05 |
2002-04-02 |
Industrial Technology Research Institute |
Method of manufacturing SOI wafer with buried layer
|
US6540861B2
(en)
|
1998-04-01 |
2003-04-01 |
Canon Kabushiki Kaisha |
Member separating apparatus and processing apparatus
|
US5933750A
(en)
*
|
1998-04-03 |
1999-08-03 |
Motorola, Inc. |
Method of fabricating a semiconductor device with a thinned substrate
|
US6180495B1
(en)
|
1998-04-03 |
2001-01-30 |
Motorola, Inc. |
Silicon carbide transistor and method therefor
|
FR2777116A1
(fr)
*
|
1998-04-03 |
1999-10-01 |
Picogiga Sa |
Structure a semiconducteurs de composant photovoltaique
|
US6221774B1
(en)
*
|
1998-04-10 |
2001-04-24 |
Silicon Genesis Corporation |
Method for surface treatment of substrates
|
WO1999053528A2
(en)
*
|
1998-04-10 |
1999-10-21 |
Silicon Genesis Corporation |
Surface treatment process and system
|
US7227176B2
(en)
|
1998-04-10 |
2007-06-05 |
Massachusetts Institute Of Technology |
Etch stop layer system
|
JP3500063B2
(ja)
|
1998-04-23 |
2004-02-23 |
信越半導体株式会社 |
剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
|
JPH11307472A
(ja)
|
1998-04-23 |
1999-11-05 |
Shin Etsu Handotai Co Ltd |
水素イオン剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ
|
JP3456143B2
(ja)
*
|
1998-05-01 |
2003-10-14 |
信越半導体株式会社 |
積層材料および光機能素子
|
JP3697106B2
(ja)
|
1998-05-15 |
2005-09-21 |
キヤノン株式会社 |
半導体基板の作製方法及び半導体薄膜の作製方法
|
US5909627A
(en)
*
|
1998-05-18 |
1999-06-01 |
Philips Electronics North America Corporation |
Process for production of thin layers of semiconductor material
|
US6224668B1
(en)
|
1998-06-02 |
2001-05-01 |
Shin-Etsu Handotai Co., Ltd. |
Method for producing SOI substrate and SOI substrate
|
DE19840421C2
(de)
*
|
1998-06-22 |
2000-05-31 |
Fraunhofer Ges Forschung |
Verfahren zur Fertigung von dünnen Substratschichten und eine dafür geeignete Substratanordnung
|
JP2000012864A
(ja)
|
1998-06-22 |
2000-01-14 |
Semiconductor Energy Lab Co Ltd |
半導体装置の作製方法
|
US6291326B1
(en)
|
1998-06-23 |
2001-09-18 |
Silicon Genesis Corporation |
Pre-semiconductor process implant and post-process film separation
|
US6054370A
(en)
*
|
1998-06-30 |
2000-04-25 |
Intel Corporation |
Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer
|
JP3395661B2
(ja)
|
1998-07-07 |
2003-04-14 |
信越半導体株式会社 |
Soiウエーハの製造方法
|
JP3358550B2
(ja)
|
1998-07-07 |
2002-12-24 |
信越半導体株式会社 |
Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ
|
US20020089016A1
(en)
|
1998-07-10 |
2002-07-11 |
Jean-Pierre Joly |
Thin layer semi-conductor structure comprising a heat distribution layer
|
JP3385972B2
(ja)
*
|
1998-07-10 |
2003-03-10 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法および貼り合わせウェーハ
|
TW444266B
(en)
*
|
1998-07-23 |
2001-07-01 |
Canon Kk |
Semiconductor substrate and method of producing same
|
US6271101B1
(en)
*
|
1998-07-29 |
2001-08-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Process for production of SOI substrate and process for production of semiconductor device
|
FR2781925B1
(fr)
|
1998-07-30 |
2001-11-23 |
Commissariat Energie Atomique |
Transfert selectif d'elements d'un support vers un autre support
|
JP4476390B2
(ja)
|
1998-09-04 |
2010-06-09 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
EP0989593A3
(de)
*
|
1998-09-25 |
2002-01-02 |
Canon Kabushiki Kaisha |
Verfahren und Vorrichtung zur Zerteilung von Substrat und Substratherstellungverfahren
|
FR2784796B1
(fr)
|
1998-10-15 |
2001-11-23 |
Commissariat Energie Atomique |
Procede de realisation d'une couche de materiau enterree dans un autre materiau
|
FR2784795B1
(fr)
*
|
1998-10-16 |
2000-12-01 |
Commissariat Energie Atomique |
Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure
|
TW484184B
(en)
|
1998-11-06 |
2002-04-21 |
Canon Kk |
Sample separating apparatus and method, and substrate manufacturing method
|
US6672358B2
(en)
|
1998-11-06 |
2004-01-06 |
Canon Kabushiki Kaisha |
Sample processing system
|
JP2000150836A
(ja)
|
1998-11-06 |
2000-05-30 |
Canon Inc |
試料の処理システム
|
DE19936941B4
(de)
*
|
1998-11-11 |
2008-11-06 |
Robert Bosch Gmbh |
Verfahren zur Herstellung dünner Schichten, insbesondere Dünnschichtsolarzellen, auf einem Trägersubstrat
|
FR2786565B1
(fr)
*
|
1998-11-27 |
2000-12-22 |
Commissariat Energie Atomique |
Structure micro-usinee a membrane deformable et son procede de realisation
|
FR2786564B1
(fr)
|
1998-11-27 |
2001-04-13 |
Commissariat Energie Atomique |
Capteur de pression a membrane comportant du carbure de silicium et procede de fabrication
|
JP2000349264A
(ja)
|
1998-12-04 |
2000-12-15 |
Canon Inc |
半導体ウエハの製造方法、使用方法および利用方法
|
US6331473B1
(en)
|
1998-12-29 |
2001-12-18 |
Seiko Epson Corporation |
SOI substrate, method for making the same, semiconductive device and liquid crystal panel using the same
|
US20040229443A1
(en)
*
|
1998-12-31 |
2004-11-18 |
Bower Robert W. |
Structures, materials and methods for fabrication of nanostructures by transposed split of ion cut materials
|
US20050124142A1
(en)
*
|
1998-12-31 |
2005-06-09 |
Bower Robert W. |
Transposed split of ion cut materials
|
US6346458B1
(en)
*
|
1998-12-31 |
2002-02-12 |
Robert W. Bower |
Transposed split of ion cut materials
|
US6346459B1
(en)
*
|
1999-02-05 |
2002-02-12 |
Silicon Wafer Technologies, Inc. |
Process for lift off and transfer of semiconductor devices onto an alien substrate
|
FR2789496B1
(fr)
*
|
1999-02-10 |
2002-06-07 |
Commissariat Energie Atomique |
Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif
|
US20040175901A1
(en)
*
|
1999-02-10 |
2004-09-09 |
Commissariat A L'energie Atomique |
Method for forming an optical silicon layer on a support and use of said method in the production of optical components
|
FR2789517B1
(fr)
*
|
1999-02-10 |
2001-03-09 |
Commissariat Energie Atomique |
Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques
|
US6255195B1
(en)
*
|
1999-02-22 |
2001-07-03 |
Intersil Corporation |
Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
|
EP1039513A3
(de)
|
1999-03-26 |
2008-11-26 |
Canon Kabushiki Kaisha |
Verfahren zur Herstellung einer SOI-Scheibe
|
JP3911901B2
(ja)
|
1999-04-09 |
2007-05-09 |
信越半導体株式会社 |
Soiウエーハおよびsoiウエーハの製造方法
|
US6171965B1
(en)
*
|
1999-04-21 |
2001-01-09 |
Silicon Genesis Corporation |
Treatment method of cleaved film for the manufacture of substrates
|
US6355541B1
(en)
|
1999-04-21 |
2002-03-12 |
Lockheed Martin Energy Research Corporation |
Method for transfer of thin-film of silicon carbide via implantation and wafer bonding
|
US6204151B1
(en)
*
|
1999-04-21 |
2001-03-20 |
Silicon Genesis Corporation |
Smoothing method for cleaved films made using thermal treatment
|
US6287941B1
(en)
*
|
1999-04-21 |
2001-09-11 |
Silicon Genesis Corporation |
Surface finishing of SOI substrates using an EPI process
|
US6881644B2
(en)
*
|
1999-04-21 |
2005-04-19 |
Silicon Genesis Corporation |
Smoothing method for cleaved films made using a release layer
|
AU4481100A
(en)
*
|
1999-04-21 |
2000-11-02 |
Silicon Genesis Corporation |
Treatment method of cleaved film for the manufacture of substrates
|
EP1226612A4
(de)
*
|
1999-05-06 |
2007-01-24 |
Univ Boston |
Im sizilium vergrabene, reflektierende schicht und verfahren zu derenherstellung
|
US6387829B1
(en)
|
1999-06-18 |
2002-05-14 |
Silicon Wafer Technologies, Inc. |
Separation process for silicon-on-insulator wafer fabrication
|
US6458723B1
(en)
|
1999-06-24 |
2002-10-01 |
Silicon Genesis Corporation |
High temperature implant apparatus
|
FR2795865B1
(fr)
*
|
1999-06-30 |
2001-08-17 |
Commissariat Energie Atomique |
Procede de realisation d'un film mince utilisant une mise sous pression
|
FR2795866B1
(fr)
|
1999-06-30 |
2001-08-17 |
Commissariat Energie Atomique |
Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue
|
TW478169B
(en)
|
1999-07-16 |
2002-03-01 |
Seiko Epson Corp |
Electro optical device and the projection display device using the same
|
US6323108B1
(en)
|
1999-07-27 |
2001-11-27 |
The United States Of America As Represented By The Secretary Of The Navy |
Fabrication ultra-thin bonded semiconductor layers
|
EP1212787B1
(de)
*
|
1999-08-10 |
2014-10-08 |
Silicon Genesis Corporation |
Spaltprozess für die herstellung mehrlagiger substrate mit geringer implantationsdosis
|
US6263941B1
(en)
|
1999-08-10 |
2001-07-24 |
Silicon Genesis Corporation |
Nozzle for cleaving substrates
|
US6221740B1
(en)
|
1999-08-10 |
2001-04-24 |
Silicon Genesis Corporation |
Substrate cleaving tool and method
|
US6500732B1
(en)
|
1999-08-10 |
2002-12-31 |
Silicon Genesis Corporation |
Cleaving process to fabricate multilayered substrates using low implantation doses
|
FR2797713B1
(fr)
|
1999-08-20 |
2002-08-02 |
Soitec Silicon On Insulator |
Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
|
FR2797714B1
(fr)
*
|
1999-08-20 |
2001-10-26 |
Soitec Silicon On Insulator |
Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
|
FR2798224B1
(fr)
*
|
1999-09-08 |
2003-08-29 |
Commissariat Energie Atomique |
Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs.
|
DE19943101C2
(de)
*
|
1999-09-09 |
2002-06-20 |
Wacker Siltronic Halbleitermat |
Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
|
US6653209B1
(en)
|
1999-09-30 |
2003-11-25 |
Canon Kabushiki Kaisha |
Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
|
US6368938B1
(en)
|
1999-10-05 |
2002-04-09 |
Silicon Wafer Technologies, Inc. |
Process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate
|
US6846718B1
(en)
|
1999-10-14 |
2005-01-25 |
Shin-Etsu Handotai Co., Ltd. |
Method for producing SOI wafer and SOI wafer
|
US6797632B1
(en)
|
1999-10-14 |
2004-09-28 |
Shin-Etsu Handotai Co., Ltd. |
Bonded wafer producing method and bonded wafer
|
JP3943782B2
(ja)
|
1999-11-29 |
2007-07-11 |
信越半導体株式会社 |
剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
|
TW508690B
(en)
|
1999-12-08 |
2002-11-01 |
Canon Kk |
Composite member separating method, thin film manufacturing method, and composite member separating apparatus
|
FR2802340B1
(fr)
|
1999-12-13 |
2003-09-05 |
Commissariat Energie Atomique |
Structure comportant des cellules photovoltaiques et procede de realisation
|
JP2001189288A
(ja)
*
|
1999-12-20 |
2001-07-10 |
Ind Technol Res Inst |
イオン注入利用の基板ダイシング法
|
EP1187216B1
(de)
*
|
1999-12-24 |
2018-04-04 |
Shin-Etsu Handotai Co., Ltd. |
Herstellungsmethode einer verbundscheibe
|
US6291858B1
(en)
*
|
2000-01-03 |
2001-09-18 |
International Business Machines Corporation |
Multistack 3-dimensional high density semiconductor device and method for fabrication
|
US6352909B1
(en)
|
2000-01-06 |
2002-03-05 |
Silicon Wafer Technologies, Inc. |
Process for lift-off of a layer from a substrate
|
US6633066B1
(en)
|
2000-01-07 |
2003-10-14 |
Samsung Electronics Co., Ltd. |
CMOS integrated circuit devices and substrates having unstrained silicon active layers
|
US20010038153A1
(en)
|
2000-01-07 |
2001-11-08 |
Kiyofumi Sakaguchi |
Semiconductor substrate and process for its production
|
US6544862B1
(en)
*
|
2000-01-14 |
2003-04-08 |
Silicon Genesis Corporation |
Particle distribution method and resulting structure for a layer transfer process
|
US6602613B1
(en)
|
2000-01-20 |
2003-08-05 |
Amberwave Systems Corporation |
Heterointegration of materials using deposition and bonding
|
US6750130B1
(en)
|
2000-01-20 |
2004-06-15 |
Amberwave Systems Corporation |
Heterointegration of materials using deposition and bonding
|
US6503773B2
(en)
|
2000-01-20 |
2003-01-07 |
Amberwave Systems Corporation |
Low threading dislocation density relaxed mismatched epilayers without high temperature growth
|
US6344417B1
(en)
|
2000-02-18 |
2002-02-05 |
Silicon Wafer Technologies |
Method for micro-mechanical structures
|
US6326285B1
(en)
|
2000-02-24 |
2001-12-04 |
International Business Machines Corporation |
Simultaneous multiple silicon on insulator (SOI) wafer production
|
TW452866B
(en)
*
|
2000-02-25 |
2001-09-01 |
Lee Tien Hsi |
Manufacturing method of thin film on a substrate
|
US7229891B2
(en)
*
|
2000-03-06 |
2007-06-12 |
John Howard Coleman |
Fabrication method for silicon-on defect layer in field-effect and bipolar transistor devices
|
JP2001274368A
(ja)
*
|
2000-03-27 |
2001-10-05 |
Shin Etsu Handotai Co Ltd |
貼り合わせウエーハの製造方法およびこの方法で製造された貼り合わせウエーハ
|
KR100789205B1
(ko)
*
|
2000-03-29 |
2007-12-31 |
신에쯔 한도타이 가부시키가이샤 |
실리콘 웨이퍼 및 에스오아이 웨이퍼의 제조방법, 그리고그 에스오아이 웨이퍼
|
JP4846915B2
(ja)
*
|
2000-03-29 |
2011-12-28 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
AU2001254866A1
(en)
*
|
2000-04-14 |
2001-10-30 |
S.O.I.Tec Silicon On Insulator Technologies |
Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s)
|
US7319247B2
(en)
*
|
2000-04-26 |
2008-01-15 |
Osram Gmbh |
Light emitting-diode chip and a method for producing same
|
WO2001082384A1
(de)
*
|
2000-04-26 |
2001-11-01 |
Osram Opto Semiconductors Gmbh |
Strahlungsmittierendes halbleiterbauelement und herstellungsverfahren
|
DE10051465A1
(de)
*
|
2000-10-17 |
2002-05-02 |
Osram Opto Semiconductors Gmbh |
Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
|
US6573160B2
(en)
*
|
2000-05-26 |
2003-06-03 |
Motorola, Inc. |
Method of recrystallizing an amorphous region of a semiconductor
|
FR2809534B1
(fr)
*
|
2000-05-26 |
2005-01-14 |
Commissariat Energie Atomique |
Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
|
TWI289944B
(en)
|
2000-05-26 |
2007-11-11 |
Osram Opto Semiconductors Gmbh |
Light-emitting-diode-element with a light-emitting-diode-chip
|
US6900113B2
(en)
|
2000-05-30 |
2005-05-31 |
Shin-Etsu Handotai Co., Ltd. |
Method for producing bonded wafer and bonded wafer
|
FR2809867B1
(fr)
*
|
2000-05-30 |
2003-10-24 |
Commissariat Energie Atomique |
Substrat fragilise et procede de fabrication d'un tel substrat
|
US6303469B1
(en)
*
|
2000-06-07 |
2001-10-16 |
Micron Technology, Inc. |
Thin microelectronic substrates and methods of manufacture
|
US6635552B1
(en)
|
2000-06-12 |
2003-10-21 |
Micron Technology, Inc. |
Methods of forming semiconductor constructions
|
FR2810448B1
(fr)
*
|
2000-06-16 |
2003-09-19 |
Soitec Silicon On Insulator |
Procede de fabrication de substrats et substrats obtenus par ce procede
|
JP3580227B2
(ja)
*
|
2000-06-21 |
2004-10-20 |
三菱住友シリコン株式会社 |
複合基板の分離方法及び分離装置
|
AU2001269477A1
(en)
*
|
2000-07-06 |
2002-01-21 |
Asahi Kasei Kabushiki Kaisha |
Molecule detecting sensor
|
FR2811807B1
(fr)
*
|
2000-07-12 |
2003-07-04 |
Commissariat Energie Atomique |
Procede de decoupage d'un bloc de materiau et de formation d'un film mince
|
US6573126B2
(en)
|
2000-08-16 |
2003-06-03 |
Massachusetts Institute Of Technology |
Process for producing semiconductor article using graded epitaxial growth
|
US6534819B2
(en)
|
2000-08-30 |
2003-03-18 |
Cornell Research Foundation, Inc. |
Dense backplane cell for configurable logic
|
US6429070B1
(en)
*
|
2000-08-30 |
2002-08-06 |
Micron Technology, Inc. |
DRAM cell constructions, and methods of forming DRAM cells
|
JP2002110949A
(ja)
|
2000-09-28 |
2002-04-12 |
Canon Inc |
Soiの熱処理方法及び製造方法
|
JP2002110688A
(ja)
|
2000-09-29 |
2002-04-12 |
Canon Inc |
Soiの熱処理方法及び製造方法
|
US6660606B2
(en)
|
2000-09-29 |
2003-12-09 |
Canon Kabushiki Kaisha |
Semiconductor-on-insulator annealing method
|
US6475072B1
(en)
*
|
2000-09-29 |
2002-11-05 |
International Business Machines Corporation |
Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)
|
JP2002124652A
(ja)
|
2000-10-16 |
2002-04-26 |
Seiko Epson Corp |
半導体基板の製造方法、半導体基板、電気光学装置並びに電子機器
|
FR2817394B1
(fr)
|
2000-11-27 |
2003-10-31 |
Soitec Silicon On Insulator |
Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
|
US7407869B2
(en)
*
|
2000-11-27 |
2008-08-05 |
S.O.I.Tec Silicon On Insulator Technologies |
Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
|
FR2840731B3
(fr)
|
2002-06-11 |
2004-07-30 |
Soitec Silicon On Insulator |
Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
|
FR2817395B1
(fr)
*
|
2000-11-27 |
2003-10-31 |
Soitec Silicon On Insulator |
Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
|
FR2894990B1
(fr)
|
2005-12-21 |
2008-02-22 |
Soitec Silicon On Insulator |
Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
|
US8507361B2
(en)
|
2000-11-27 |
2013-08-13 |
Soitec |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
|
US6649480B2
(en)
|
2000-12-04 |
2003-11-18 |
Amberwave Systems Corporation |
Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
|
US20020100942A1
(en)
*
|
2000-12-04 |
2002-08-01 |
Fitzgerald Eugene A. |
CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
|
FR2818010B1
(fr)
*
|
2000-12-08 |
2003-09-05 |
Commissariat Energie Atomique |
Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
|
US7094667B1
(en)
|
2000-12-28 |
2006-08-22 |
Bower Robert W |
Smooth thin film layers produced by low temperature hydrogen ion cut
|
US6774010B2
(en)
|
2001-01-25 |
2004-08-10 |
International Business Machines Corporation |
Transferable device-containing layer for silicon-on-insulator applications
|
DE10107405A1
(de)
*
|
2001-02-14 |
2002-09-12 |
Rainer Schork |
Direktprozessierbare Halbleiterfolie
|
US6448152B1
(en)
*
|
2001-02-20 |
2002-09-10 |
Silicon Genesis Corporation |
Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer
|
US6706608B2
(en)
*
|
2001-02-28 |
2004-03-16 |
Micron Technology, Inc. |
Memory cell capacitors having an over/under configuration
|
US6699770B2
(en)
*
|
2001-03-01 |
2004-03-02 |
John Tarje Torvik |
Method of making a hybride substrate having a thin silicon carbide membrane layer
|
US6723661B2
(en)
|
2001-03-02 |
2004-04-20 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6830976B2
(en)
|
2001-03-02 |
2004-12-14 |
Amberwave Systems Corproation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6724008B2
(en)
|
2001-03-02 |
2004-04-20 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6703688B1
(en)
|
2001-03-02 |
2004-03-09 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6613652B2
(en)
*
|
2001-03-14 |
2003-09-02 |
Chartered Semiconductor Manufacturing Ltd. |
Method for fabricating SOI devices with option of incorporating air-gap feature for better insulation and performance
|
JP4749584B2
(ja)
*
|
2001-03-30 |
2011-08-17 |
株式会社豊田中央研究所 |
半導体基板の製造方法
|
WO2002082514A1
(en)
|
2001-04-04 |
2002-10-17 |
Massachusetts Institute Of Technology |
A method for semiconductor device fabrication
|
FR2823373B1
(fr)
*
|
2001-04-10 |
2005-02-04 |
Soitec Silicon On Insulator |
Dispositif de coupe de couche d'un substrat, et procede associe
|
JP2004537161A
(ja)
*
|
2001-04-11 |
2004-12-09 |
エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド |
高抵抗率czシリコンにおけるサーマルドナー生成の制御
|
FR2823599B1
(fr)
|
2001-04-13 |
2004-12-17 |
Commissariat Energie Atomique |
Substrat demomtable a tenue mecanique controlee et procede de realisation
|
US7019339B2
(en)
*
|
2001-04-17 |
2006-03-28 |
California Institute Of Technology |
Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby
|
US20050026432A1
(en)
*
|
2001-04-17 |
2005-02-03 |
Atwater Harry A. |
Wafer bonded epitaxial templates for silicon heterostructures
|
US7238622B2
(en)
*
|
2001-04-17 |
2007-07-03 |
California Institute Of Technology |
Wafer bonded virtual substrate and method for forming the same
|
JP4775680B2
(ja)
*
|
2001-05-16 |
2011-09-21 |
信越半導体株式会社 |
シリコン結晶中の結晶欠陥観察用試料作製方法及び薄片試料
|
US7045878B2
(en)
*
|
2001-05-18 |
2006-05-16 |
Reveo, Inc. |
Selectively bonded thin film layer and substrate layer for processing of useful devices
|
US6956268B2
(en)
*
|
2001-05-18 |
2005-10-18 |
Reveo, Inc. |
MEMS and method of manufacturing MEMS
|
KR100456526B1
(ko)
*
|
2001-05-22 |
2004-11-09 |
삼성전자주식회사 |
식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법
|
JP2002353081A
(ja)
|
2001-05-25 |
2002-12-06 |
Canon Inc |
板部材の分離装置及び分離方法
|
JP2002353423A
(ja)
*
|
2001-05-25 |
2002-12-06 |
Canon Inc |
板部材の分離装置及び処理方法
|
JP2002353082A
(ja)
|
2001-05-28 |
2002-12-06 |
Shin Etsu Handotai Co Ltd |
貼り合わせウェーハの製造方法
|
US6759282B2
(en)
*
|
2001-06-12 |
2004-07-06 |
International Business Machines Corporation |
Method and structure for buried circuits and devices
|
DE10131249A1
(de)
*
|
2001-06-28 |
2002-05-23 |
Wacker Siltronic Halbleitermat |
Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
|
US6717213B2
(en)
*
|
2001-06-29 |
2004-04-06 |
Intel Corporation |
Creation of high mobility channels in thin-body SOI devices
|
US7883628B2
(en)
*
|
2001-07-04 |
2011-02-08 |
S.O.I.Tec Silicon On Insulator Technologies |
Method of reducing the surface roughness of a semiconductor wafer
|
US7749910B2
(en)
*
|
2001-07-04 |
2010-07-06 |
S.O.I.Tec Silicon On Insulator Technologies |
Method of reducing the surface roughness of a semiconductor wafer
|
FR2827078B1
(fr)
*
|
2001-07-04 |
2005-02-04 |
Soitec Silicon On Insulator |
Procede de diminution de rugosite de surface
|
GB2377409A
(en)
*
|
2001-07-13 |
2003-01-15 |
Dek Int Gmbh |
Screen printing alignment and inspection apparatus having at least two workpiece imaging units
|
FR2827423B1
(fr)
*
|
2001-07-16 |
2005-05-20 |
Soitec Silicon On Insulator |
Procede d'amelioration d'etat de surface
|
CN100454552C
(zh)
|
2001-07-17 |
2009-01-21 |
信越半导体株式会社 |
贴合晶片的制造方法及贴合晶片、以及贴合soi晶片
|
US6844236B2
(en)
*
|
2001-07-23 |
2005-01-18 |
Agere Systems Inc. |
Method and structure for DC and RF shielding of integrated circuits
|
FR2828428B1
(fr)
*
|
2001-08-07 |
2003-10-17 |
Soitec Silicon On Insulator |
Dispositif de decollement de substrats et procede associe
|
FR2828762B1
(fr)
*
|
2001-08-14 |
2003-12-05 |
Soitec Silicon On Insulator |
Procede d'obtention d'une couche mince d'un materiau semi-conducteur supportant au moins un composant et/ou circuit electronique
|
US6566158B2
(en)
|
2001-08-17 |
2003-05-20 |
Rosemount Aerospace Inc. |
Method of preparing a semiconductor using ion implantation in a SiC layer
|
US6806171B1
(en)
|
2001-08-24 |
2004-10-19 |
Silicon Wafer Technologies, Inc. |
Method of producing a thin layer of crystalline material
|
US6696352B1
(en)
|
2001-09-11 |
2004-02-24 |
Silicon Wafer Technologies, Inc. |
Method of manufacture of a multi-layered substrate with a thin single crystalline layer and a versatile sacrificial layer
|
US7163826B2
(en)
*
|
2001-09-12 |
2007-01-16 |
Reveo, Inc |
Method of fabricating multi layer devices on buried oxide layer substrates
|
US7033910B2
(en)
*
|
2001-09-12 |
2006-04-25 |
Reveo, Inc. |
Method of fabricating multi layer MEMS and microfluidic devices
|
US6875671B2
(en)
*
|
2001-09-12 |
2005-04-05 |
Reveo, Inc. |
Method of fabricating vertical integrated circuits
|
JP2005504436A
(ja)
|
2001-09-21 |
2005-02-10 |
アンバーウェーブ システムズ コーポレイション |
画定された不純物勾配を有するひずみ材料層を使用する半導体構造、およびその構造を製作するための方法。
|
US6933518B2
(en)
|
2001-09-24 |
2005-08-23 |
Amberwave Systems Corporation |
RF circuits including transistors having strained material layers
|
JP2003095798A
(ja)
*
|
2001-09-27 |
2003-04-03 |
Hoya Corp |
単結晶基板の製造方法
|
FR2830372B1
(fr)
*
|
2001-09-28 |
2008-08-22 |
|
Procede de caracterisation d'une etape d'implantation dans un substrat de materiau
|
US6555451B1
(en)
|
2001-09-28 |
2003-04-29 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making shallow diffusion junctions in semiconductors using elemental doping
|
FR2830983B1
(fr)
|
2001-10-11 |
2004-05-14 |
Commissariat Energie Atomique |
Procede de fabrication de couches minces contenant des microcomposants
|
US6632694B2
(en)
|
2001-10-17 |
2003-10-14 |
Astralux, Inc. |
Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters
|
US6593212B1
(en)
|
2001-10-29 |
2003-07-15 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making electro-optical devices using a hydrogenion splitting technique
|
US7501303B2
(en)
*
|
2001-11-05 |
2009-03-10 |
The Trustees Of Boston University |
Reflective layer buried in silicon and method of fabrication
|
GB0127263D0
(en)
*
|
2001-11-13 |
2002-01-02 |
Diamanx Products Ltd |
Layered structures
|
FR2834381B1
(fr)
*
|
2002-01-03 |
2004-02-27 |
Soitec Silicon On Insulator |
Dispositif de coupe de couche d'un substrat, et procede associe
|
JP2003204048A
(ja)
|
2002-01-09 |
2003-07-18 |
Shin Etsu Handotai Co Ltd |
Soiウエーハの製造方法及びsoiウエーハ
|
US6562127B1
(en)
|
2002-01-16 |
2003-05-13 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of making mosaic array of thin semiconductor material of large substrates
|
FR2834820B1
(fr)
*
|
2002-01-16 |
2005-03-18 |
|
Procede de clivage de couches d'une tranche de materiau
|
FR2835095B1
(fr)
*
|
2002-01-22 |
2005-03-18 |
|
Procede de preparation d'ensembles a semi-conducteurs separables, notamment pour former des substrats pour l'electronique, l'optoelectrique et l'optique
|
JP2003249641A
(ja)
*
|
2002-02-22 |
2003-09-05 |
Sharp Corp |
半導体基板、その製造方法及び半導体装置
|
US20050013996A1
(en)
*
|
2002-03-08 |
2005-01-20 |
Hatfield Stephen F. |
Hot melt pressure sensitive adhesives for disposable articles
|
WO2003079415A2
(en)
|
2002-03-14 |
2003-09-25 |
Amberwave Systems Corporation |
Methods for fabricating strained layers on semiconductor substrates
|
US6607969B1
(en)
|
2002-03-18 |
2003-08-19 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques
|
US7119365B2
(en)
|
2002-03-26 |
2006-10-10 |
Sharp Kabushiki Kaisha |
Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
|
US6767749B2
(en)
|
2002-04-22 |
2004-07-27 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
|
FR2839199B1
(fr)
|
2002-04-30 |
2005-06-24 |
Soitec Silicon On Insulator |
Procede de fabrication de substrats avec detachement d'un support temporaire, et substrat associe
|
FR2839385B1
(fr)
*
|
2002-05-02 |
2004-07-23 |
Soitec Silicon On Insulator |
Procede de decollement de couches de materiau
|
FR2874455B1
(fr)
*
|
2004-08-19 |
2008-02-08 |
Soitec Silicon On Insulator |
Traitement thermique avant collage de deux plaquettes
|
JP2003345267A
(ja)
*
|
2002-05-30 |
2003-12-03 |
Canon Inc |
表示装置及びその製造方法
|
AU2003237399A1
(en)
*
|
2002-06-03 |
2003-12-19 |
Tien-Hsi Lee |
Methods for transferring a layer onto a substrate
|
US6995430B2
(en)
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
US7335545B2
(en)
|
2002-06-07 |
2008-02-26 |
Amberwave Systems Corporation |
Control of strain in device layers by prevention of relaxation
|
US7074623B2
(en)
|
2002-06-07 |
2006-07-11 |
Amberwave Systems Corporation |
Methods of forming strained-semiconductor-on-insulator finFET device structures
|
US7615829B2
(en)
|
2002-06-07 |
2009-11-10 |
Amberwave Systems Corporation |
Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
|
US20030227057A1
(en)
|
2002-06-07 |
2003-12-11 |
Lochtefeld Anthony J. |
Strained-semiconductor-on-insulator device structures
|
US7307273B2
(en)
|
2002-06-07 |
2007-12-11 |
Amberwave Systems Corporation |
Control of strain in device layers by selective relaxation
|
AU2003247513A1
(en)
|
2002-06-10 |
2003-12-22 |
Amberwave Systems Corporation |
Growing source and drain elements by selecive epitaxy
|
US6862795B2
(en)
*
|
2002-06-17 |
2005-03-08 |
Vty Holding Oy |
Method of manufacturing of a monolithic silicon acceleration sensor
|
US7157119B2
(en)
*
|
2002-06-25 |
2007-01-02 |
Ppg Industries Ohio, Inc. |
Method and compositions for applying multiple overlying organic pigmented decorations on ceramic substrates
|
US6982474B2
(en)
|
2002-06-25 |
2006-01-03 |
Amberwave Systems Corporation |
Reacted conductive gate electrodes
|
US6953736B2
(en)
*
|
2002-07-09 |
2005-10-11 |
S.O.I.Tec Silicon On Insulator Technologies S.A. |
Process for transferring a layer of strained semiconductor material
|
US6995075B1
(en)
*
|
2002-07-12 |
2006-02-07 |
Silicon Wafer Technologies |
Process for forming a fragile layer inside of a single crystalline substrate
|
FR2842649B1
(fr)
*
|
2002-07-17 |
2005-06-24 |
Soitec Silicon On Insulator |
Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
|
FR2842646B1
(fr)
*
|
2002-07-17 |
2005-06-24 |
Soitec Silicon On Insulator |
Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
|
DE60315670T2
(de)
*
|
2002-07-17 |
2008-06-05 |
S.O.I.Tec Silicon On Insulator Technologies |
Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
|
FR2842650B1
(fr)
*
|
2002-07-17 |
2005-09-02 |
Soitec Silicon On Insulator |
Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
|
FR2842647B1
(fr)
*
|
2002-07-17 |
2004-09-17 |
Soitec Silicon On Insulator |
Procede de transfert de couche
|
US6979630B2
(en)
*
|
2002-08-08 |
2005-12-27 |
Isonics Corporation |
Method and apparatus for transferring a thin layer of semiconductor material
|
US7402897B2
(en)
*
|
2002-08-08 |
2008-07-22 |
Elm Technology Corporation |
Vertical system integration
|
AU2003274922A1
(en)
|
2002-08-23 |
2004-03-11 |
Amberwave Systems Corporation |
Semiconductor heterostructures having reduced dislocation pile-ups and related methods
|
US7608927B2
(en)
*
|
2002-08-29 |
2009-10-27 |
Micron Technology, Inc. |
Localized biasing for silicon on insulator structures
|
US20040043193A1
(en)
*
|
2002-08-30 |
2004-03-04 |
Yih-Fang Chen |
Friction material with friction modifying layer
|
US7594967B2
(en)
|
2002-08-30 |
2009-09-29 |
Amberwave Systems Corporation |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
|
FR2844099B1
(fr)
*
|
2002-09-03 |
2005-09-02 |
Commissariat Energie Atomique |
Dispositif semiconducteur de puissance quasi-vertical sur substrat composite
|
EP1396883A3
(de)
*
|
2002-09-04 |
2005-11-30 |
Canon Kabushiki Kaisha |
Substrat und Herstellungsverfahren dafür
|
JP2004103600A
(ja)
*
|
2002-09-04 |
2004-04-02 |
Canon Inc |
基板及びその製造方法
|
JP2004103855A
(ja)
*
|
2002-09-10 |
2004-04-02 |
Canon Inc |
基板及びその製造方法
|
JP2004103946A
(ja)
*
|
2002-09-11 |
2004-04-02 |
Canon Inc |
基板及びその製造方法
|
KR100473855B1
(ko)
*
|
2002-09-12 |
2005-03-10 |
주식회사 실트론 |
에스오아이 웨이퍼의 제조 방법
|
US7508034B2
(en)
*
|
2002-09-25 |
2009-03-24 |
Sharp Kabushiki Kaisha |
Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
|
US6793830B2
(en)
*
|
2002-09-27 |
2004-09-21 |
Medtronic, Inc. |
Method for forming a microstructure from a monocrystalline substrate
|
US6800910B2
(en)
*
|
2002-09-30 |
2004-10-05 |
Advanced Micro Devices, Inc. |
FinFET device incorporating strained silicon in the channel region
|
US8187377B2
(en)
*
|
2002-10-04 |
2012-05-29 |
Silicon Genesis Corporation |
Non-contact etch annealing of strained layers
|
GB2409340B
(en)
|
2002-10-04 |
2006-05-10 |
Silicon Genesis Corp |
Method for treating semiconductor material
|
JP2004134672A
(ja)
|
2002-10-11 |
2004-04-30 |
Sony Corp |
超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置
|
US6927422B2
(en)
*
|
2002-10-17 |
2005-08-09 |
Astralux, Inc. |
Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters
|
US6821342B2
(en)
*
|
2002-10-23 |
2004-11-23 |
Medtronic, Inc. |
Method for forming suspended microstructures
|
US7176108B2
(en)
|
2002-11-07 |
2007-02-13 |
Soitec Silicon On Insulator |
Method of detaching a thin film at moderate temperature after co-implantation
|
FR2847075B1
(fr)
*
|
2002-11-07 |
2005-02-18 |
Commissariat Energie Atomique |
Procede de formation d'une zone fragile dans un substrat par co-implantation
|
FR2848336B1
(fr)
*
|
2002-12-09 |
2005-10-28 |
Commissariat Energie Atomique |
Procede de realisation d'une structure contrainte destinee a etre dissociee
|
JP2004193515A
(ja)
|
2002-12-13 |
2004-07-08 |
Shin Etsu Handotai Co Ltd |
Soiウエーハの製造方法
|
US7187162B2
(en)
*
|
2002-12-16 |
2007-03-06 |
S.O.I.Tec Silicon On Insulator Technologies S.A. |
Tools and methods for disuniting semiconductor wafers
|
US7799675B2
(en)
*
|
2003-06-24 |
2010-09-21 |
Sang-Yun Lee |
Bonded semiconductor structure and method of fabricating the same
|
US20100133695A1
(en)
*
|
2003-01-12 |
2010-06-03 |
Sang-Yun Lee |
Electronic circuit with embedded memory
|
RU2217842C1
(ru)
*
|
2003-01-14 |
2003-11-27 |
Институт физики полупроводников - Объединенного института физики полупроводников СО РАН |
Способ изготовления структуры кремний-на-изоляторе
|
FR2850390B1
(fr)
*
|
2003-01-24 |
2006-07-14 |
Soitec Silicon On Insulator |
Procede d'elimination d'une zone peripherique de colle lors de la fabrication d'un substrat composite
|
EP2337062A3
(de)
|
2003-01-27 |
2016-05-04 |
Taiwan Semiconductor Manufacturing Company, Limited |
Herstellungsverfahren von HALBLEITERSTRUKTUREN MIT STRUKTURHOMOGENITÄT
|
JP2004247610A
(ja)
*
|
2003-02-14 |
2004-09-02 |
Canon Inc |
基板の製造方法
|
US7176528B2
(en)
|
2003-02-18 |
2007-02-13 |
Corning Incorporated |
Glass-based SOI structures
|
US7399681B2
(en)
*
|
2003-02-18 |
2008-07-15 |
Corning Incorporated |
Glass-based SOI structures
|
US7235920B2
(en)
|
2003-02-24 |
2007-06-26 |
Osram Opto Semiconductors Gmbh |
Display device and method of its manufacture
|
JP2004259970A
(ja)
*
|
2003-02-26 |
2004-09-16 |
Shin Etsu Handotai Co Ltd |
Soiウエーハの製造方法及びsoiウエーハ
|
FR2851846A1
(fr)
*
|
2003-02-28 |
2004-09-03 |
Canon Kk |
Systeme de liaison et procede de fabrication d'un substrat semi-conducteur
|
US6911379B2
(en)
*
|
2003-03-05 |
2005-06-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method of forming strained silicon on insulator substrate
|
JP4585510B2
(ja)
|
2003-03-07 |
2010-11-24 |
台湾積體電路製造股▲ふん▼有限公司 |
シャロートレンチアイソレーションプロセス
|
US6949451B2
(en)
*
|
2003-03-10 |
2005-09-27 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
SOI chip with recess-resistant buried insulator and method of manufacturing the same
|
JP4794810B2
(ja)
*
|
2003-03-20 |
2011-10-19 |
シャープ株式会社 |
半導体装置の製造方法
|
JP4509488B2
(ja)
|
2003-04-02 |
2010-07-21 |
株式会社Sumco |
貼り合わせ基板の製造方法
|
US6902962B2
(en)
*
|
2003-04-04 |
2005-06-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Silicon-on-insulator chip with multiple crystal orientations
|
WO2004090958A1
(en)
*
|
2003-04-10 |
2004-10-21 |
S.O.I.Tec Silicon On Insulator Technologies |
Method of producing a hybrid device and hybrid device
|
US6831302B2
(en)
|
2003-04-15 |
2004-12-14 |
Luminus Devices, Inc. |
Light emitting devices with improved extraction efficiency
|
FR2854493B1
(fr)
*
|
2003-04-29 |
2005-08-19 |
Soitec Silicon On Insulator |
Traitement par brossage d'une plaquette semiconductrice avant collage
|
US7235461B2
(en)
*
|
2003-04-29 |
2007-06-26 |
S.O.I.Tec Silicon On Insulator Technologies |
Method for bonding semiconductor structures together
|
JP2004335642A
(ja)
|
2003-05-06 |
2004-11-25 |
Canon Inc |
基板およびその製造方法
|
US6864149B2
(en)
*
|
2003-05-09 |
2005-03-08 |
Taiwan Semiconductor Manufacturing Company |
SOI chip with mesa isolation and recess resistant regions
|
JP4239676B2
(ja)
|
2003-05-15 |
2009-03-18 |
信越半導体株式会社 |
Soiウェーハおよびその製造方法
|
EP1482548B1
(de)
|
2003-05-26 |
2016-04-13 |
Soitec |
Verfahren zur Herstellung von Halbleiterscheiben
|
DE60336543D1
(de)
*
|
2003-05-27 |
2011-05-12 |
Soitec Silicon On Insulator |
Verfahren zur Herstellung einer heteroepitaktischen Mikrostruktur
|
EP1484794A1
(de)
|
2003-06-06 |
2004-12-08 |
S.O.I. Tec Silicon on Insulator Technologies S.A. |
Verfahren zur Herstellung eines Trägersubstrats
|
US7261777B2
(en)
|
2003-06-06 |
2007-08-28 |
S.O.I.Tec Silicon On Insulator Technologies |
Method for fabricating an epitaxial substrate
|
DE10326578B4
(de)
*
|
2003-06-12 |
2006-01-19 |
Siltronic Ag |
Verfahren zur Herstellung einer SOI-Scheibe
|
US20100190334A1
(en)
*
|
2003-06-24 |
2010-07-29 |
Sang-Yun Lee |
Three-dimensional semiconductor structure and method of manufacturing the same
|
TWI240434B
(en)
*
|
2003-06-24 |
2005-09-21 |
Osram Opto Semiconductors Gmbh |
Method to produce semiconductor-chips
|
FR2856844B1
(fr)
|
2003-06-24 |
2006-02-17 |
Commissariat Energie Atomique |
Circuit integre sur puce de hautes performances
|
US8071438B2
(en)
*
|
2003-06-24 |
2011-12-06 |
Besang Inc. |
Semiconductor circuit
|
JP2005026472A
(ja)
*
|
2003-07-02 |
2005-01-27 |
Sharp Corp |
半導体装置の製造方法
|
FR2857953B1
(fr)
|
2003-07-21 |
2006-01-13 |
Commissariat Energie Atomique |
Structure empilee, et procede pour la fabriquer
|
US7538010B2
(en)
*
|
2003-07-24 |
2009-05-26 |
S.O.I.Tec Silicon On Insulator Technologies |
Method of fabricating an epitaxially grown layer
|
FR2857983B1
(fr)
*
|
2003-07-24 |
2005-09-02 |
Soitec Silicon On Insulator |
Procede de fabrication d'une couche epitaxiee
|
FR2858715B1
(fr)
*
|
2003-08-04 |
2005-12-30 |
Soitec Silicon On Insulator |
Procede de detachement de couche de semiconducteur
|
JP2005064188A
(ja)
*
|
2003-08-11 |
2005-03-10 |
Sumitomo Electric Ind Ltd |
基板の回収方法および再生方法、ならびに半導体ウエハの製造方法
|
FR2858875B1
(fr)
*
|
2003-08-12 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de realisation de couches minces de materiau semi-conducteur a partir d'une plaquette donneuse
|
CN100345247C
(zh)
*
|
2003-08-28 |
2007-10-24 |
中国科学院半导体研究所 |
一种氢致解耦合的异质外延用柔性衬底
|
EP1662549B1
(de)
*
|
2003-09-01 |
2015-07-29 |
SUMCO Corporation |
Verfahren zur herstellung eines gebondeten wafers
|
FR2859312B1
(fr)
*
|
2003-09-02 |
2006-02-17 |
Soitec Silicon On Insulator |
Scellement metallique multifonction
|
WO2005024916A1
(ja)
|
2003-09-05 |
2005-03-17 |
Sumco Corporation |
Soiウェーハの作製方法
|
WO2005027204A1
(ja)
|
2003-09-08 |
2005-03-24 |
Sumco Corporation |
貼り合わせウェーハおよびその製造方法
|
JP4419147B2
(ja)
*
|
2003-09-08 |
2010-02-24 |
株式会社Sumco |
貼り合わせウェーハの製造方法
|
FR2861497B1
(fr)
|
2003-10-28 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de transfert catastrophique d'une couche fine apres co-implantation
|
FR2861853B1
(fr)
*
|
2003-10-30 |
2006-02-24 |
Soitec Silicon On Insulator |
Substrat avec adaptation d'indice
|
US6902965B2
(en)
*
|
2003-10-31 |
2005-06-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Strained silicon structure
|
JP4610982B2
(ja)
*
|
2003-11-11 |
2011-01-12 |
シャープ株式会社 |
半導体装置の製造方法
|
US20050116290A1
(en)
*
|
2003-12-02 |
2005-06-02 |
De Souza Joel P. |
Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
|
CN1879205B
(zh)
|
2003-12-03 |
2010-12-01 |
S·O·I·Tec绝缘体上硅技术公司 |
改善半导体晶片的表面粗糙度的工艺
|
US7772087B2
(en)
|
2003-12-19 |
2010-08-10 |
Commissariat A L'energie Atomique |
Method of catastrophic transfer of a thin film after co-implantation
|
FR2864336B1
(fr)
*
|
2003-12-23 |
2006-04-28 |
Commissariat Energie Atomique |
Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
|
CN100342486C
(zh)
*
|
2003-12-24 |
2007-10-10 |
联合晶圆公司 |
一种在基板上转移制作薄膜的方法
|
US6992025B2
(en)
*
|
2004-01-12 |
2006-01-31 |
Sharp Laboratories Of America, Inc. |
Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
|
JP4539098B2
(ja)
*
|
2004-01-29 |
2010-09-08 |
株式会社Sumco |
貼り合わせ基板の製造方法
|
WO2005093807A1
(en)
*
|
2004-03-01 |
2005-10-06 |
S.O.I.Tec Silicon On Insulator Technologies |
Oxidation process of a sige layer and applications thereof
|
FR2867310B1
(fr)
*
|
2004-03-05 |
2006-05-26 |
Soitec Silicon On Insulator |
Technique d'amelioration de la qualite d'une couche mince prelevee
|
US7282449B2
(en)
*
|
2004-03-05 |
2007-10-16 |
S.O.I.Tec Silicon On Insulator Technologies |
Thermal treatment of a semiconductor layer
|
FR2867307B1
(fr)
*
|
2004-03-05 |
2006-05-26 |
Soitec Silicon On Insulator |
Traitement thermique apres detachement smart-cut
|
JP4219838B2
(ja)
*
|
2004-03-24 |
2009-02-04 |
シャープ株式会社 |
半導体基板の製造方法、並びに半導体装置の製造方法
|
US7202141B2
(en)
*
|
2004-03-29 |
2007-04-10 |
J.P. Sercel Associates, Inc. |
Method of separating layers of material
|
US7390724B2
(en)
*
|
2004-04-12 |
2008-06-24 |
Silicon Genesis Corporation |
Method and system for lattice space engineering
|
WO2005104192A2
(en)
*
|
2004-04-21 |
2005-11-03 |
California Institute Of Technology |
A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES
|
DE102004021113B4
(de)
*
|
2004-04-29 |
2006-04-20 |
Siltronic Ag |
SOI-Scheibe und Verfahren zu ihrer Herstellung
|
FR2870043B1
(fr)
*
|
2004-05-07 |
2006-11-24 |
Commissariat Energie Atomique |
Fabrication de zones actives de natures differentes directement sur isolant et application au transistor mos a simple ou double grille
|
JP2005347302A
(ja)
*
|
2004-05-31 |
2005-12-15 |
Canon Inc |
基板の製造方法
|
JP2005347301A
(ja)
*
|
2004-05-31 |
2005-12-15 |
Canon Inc |
基板の作製方法
|
US20060234486A1
(en)
*
|
2005-04-13 |
2006-10-19 |
Speck James S |
Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers
|
JP4730581B2
(ja)
|
2004-06-17 |
2011-07-20 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
US6893936B1
(en)
*
|
2004-06-29 |
2005-05-17 |
International Business Machines Corporation |
Method of Forming strained SI/SIGE on insulator with silicon germanium buffer
|
FR2872627B1
(fr)
*
|
2004-06-30 |
2006-08-18 |
Commissariat Energie Atomique |
Assemblage par adhesion moleculaire de deux substrats
|
US7094666B2
(en)
*
|
2004-07-29 |
2006-08-22 |
Silicon Genesis Corporation |
Method and system for fabricating strained layers for the manufacture of integrated circuits
|
WO2006015185A2
(en)
*
|
2004-07-30 |
2006-02-09 |
Aonex Technologies, Inc. |
GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
|
KR101140450B1
(ko)
*
|
2004-08-18 |
2012-04-30 |
코닝 인코포레이티드 |
변형된 반도체-온-절연체 구조 및 변형된 반도체-온-절연체구조의 제조방법
|
FR2874454B1
(fr)
*
|
2004-08-19 |
2006-11-24 |
Commissariat Energie Atomique |
Element en couches minces et procede de fabrication associe
|
US7238567B2
(en)
*
|
2004-08-23 |
2007-07-03 |
Texas Instruments Incorporated |
System and method for integrating low schottky barrier metal source/drain
|
DE102004041378B4
(de)
*
|
2004-08-26 |
2010-07-08 |
Siltronic Ag |
Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung
|
JP2006080314A
(ja)
*
|
2004-09-09 |
2006-03-23 |
Canon Inc |
結合基板の製造方法
|
JP4796066B2
(ja)
*
|
2004-09-16 |
2011-10-19 |
エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ |
二酸化ケイ素層を製造する方法
|
JP2008513990A
(ja)
*
|
2004-09-21 |
2008-05-01 |
エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ |
共注入および続いて注入を行うことにより薄層を得るための方法
|
US7202124B2
(en)
*
|
2004-10-01 |
2007-04-10 |
Massachusetts Institute Of Technology |
Strained gettering layers for semiconductor processes
|
US7846759B2
(en)
*
|
2004-10-21 |
2010-12-07 |
Aonex Technologies, Inc. |
Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
|
GB0423599D0
(en)
*
|
2004-10-23 |
2004-11-24 |
Univ Belfast |
Electro-optical device
|
US7402465B2
(en)
*
|
2004-11-11 |
2008-07-22 |
Samsung Electronics Co., Ltd. |
Method of fabricating single-crystal silicon film and method of fabricating TFT adopting the same
|
DE102004054564B4
(de)
*
|
2004-11-11 |
2008-11-27 |
Siltronic Ag |
Halbleitersubstrat und Verfahren zu dessen Herstellung
|
US7148124B1
(en)
|
2004-11-18 |
2006-12-12 |
Alexander Yuri Usenko |
Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers
|
EP1659623B1
(de)
*
|
2004-11-19 |
2008-04-16 |
S.O.I. Tec Silicon on Insulator Technologies S.A. |
Verfahren zur Herstellung eines Germanium-On-Insulator-Wafers (GeOI)
|
US7402520B2
(en)
*
|
2004-11-26 |
2008-07-22 |
Applied Materials, Inc. |
Edge removal of silicon-on-insulator transfer wafer
|
US20060113603A1
(en)
*
|
2004-12-01 |
2006-06-01 |
Amberwave Systems Corporation |
Hybrid semiconductor-on-insulator structures and related methods
|
US7393733B2
(en)
|
2004-12-01 |
2008-07-01 |
Amberwave Systems Corporation |
Methods of forming hybrid fin field-effect transistor structures
|
KR100634528B1
(ko)
*
|
2004-12-03 |
2006-10-16 |
삼성전자주식회사 |
단결정 실리콘 필름의 제조방법
|
JP2006173354A
(ja)
|
2004-12-15 |
2006-06-29 |
Canon Inc |
Soi基板の製造方法
|
DE102004062356A1
(de)
*
|
2004-12-23 |
2006-07-13 |
Siltronic Ag |
Halbleiterscheibe mit einer Halbleiterschicht und einer darunter liegenden elektrisch isolierenden Schicht sowie Verfahren zu deren Herstellung
|
DE102004062290A1
(de)
*
|
2004-12-23 |
2006-07-06 |
Osram Opto Semiconductors Gmbh |
Verfahren zur Herstellung eines Halbleiterchips
|
JP2008526010A
(ja)
*
|
2004-12-28 |
2008-07-17 |
エス. オー. アイ. テック シリコン オン インシュレーター テクノロジーズ |
低いホール密度を有する薄層を得るための方法
|
DE102005000826A1
(de)
*
|
2005-01-05 |
2006-07-20 |
Siltronic Ag |
Halbleiterscheibe mit Silicium-Germanium-Schicht und Verfahren zu deren Herstellung
|
US7344957B2
(en)
*
|
2005-01-19 |
2008-03-18 |
Texas Instruments Incorporated |
SOI wafer with cooling channels and a method of manufacture thereof
|
US7282425B2
(en)
*
|
2005-01-31 |
2007-10-16 |
International Business Machines Corporation |
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
|
JP4934966B2
(ja)
|
2005-02-04 |
2012-05-23 |
株式会社Sumco |
Soi基板の製造方法
|
US10374120B2
(en)
*
|
2005-02-18 |
2019-08-06 |
Koninklijke Philips N.V. |
High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
|
KR101151458B1
(ko)
*
|
2005-02-28 |
2012-06-01 |
신에쯔 한도타이 가부시키가이샤 |
접합 웨이퍼의 제조방법 및 접합 웨이퍼
|
US20110143506A1
(en)
*
|
2009-12-10 |
2011-06-16 |
Sang-Yun Lee |
Method for fabricating a semiconductor memory device
|
US8367524B2
(en)
*
|
2005-03-29 |
2013-02-05 |
Sang-Yun Lee |
Three-dimensional integrated circuit structure
|
US8455978B2
(en)
|
2010-05-27 |
2013-06-04 |
Sang-Yun Lee |
Semiconductor circuit structure and method of making the same
|
JP2006294737A
(ja)
|
2005-04-07 |
2006-10-26 |
Sumco Corp |
Soi基板の製造方法及びその製造における剥離ウェーハの再生処理方法。
|
US7494899B2
(en)
|
2005-04-14 |
2009-02-24 |
Sumco Corporation |
Method for manufacturing semiconductor substrate
|
US20060234474A1
(en)
*
|
2005-04-15 |
2006-10-19 |
The Regents Of The University Of California |
Method of transferring a thin crystalline semiconductor layer
|
FR2884647B1
(fr)
*
|
2005-04-15 |
2008-02-22 |
Soitec Silicon On Insulator |
Traitement de plaques de semi-conducteurs
|
US7205202B2
(en)
*
|
2005-04-21 |
2007-04-17 |
Freescale Semiconductor, Inc. |
Semiconductor device and method for regional stress control
|
JP5364368B2
(ja)
*
|
2005-04-21 |
2013-12-11 |
エイオーネックス・テクノロジーズ・インコーポレイテッド |
基板の製造方法
|
US7271069B2
(en)
*
|
2005-04-21 |
2007-09-18 |
Freescale Semiconductor, Inc. |
Semiconductor device having a plurality of different layers and method therefor
|
US20060240275A1
(en)
*
|
2005-04-25 |
2006-10-26 |
Gadkaree Kishor P |
Flexible display substrates
|
US7628309B1
(en)
|
2005-05-03 |
2009-12-08 |
Rosemount Aerospace Inc. |
Transient liquid phase eutectic bonding
|
US7400042B2
(en)
*
|
2005-05-03 |
2008-07-15 |
Rosemount Aerospace Inc. |
Substrate with adhesive bonding metallization with diffusion barrier
|
US20070013014A1
(en)
*
|
2005-05-03 |
2007-01-18 |
Shuwen Guo |
High temperature resistant solid state pressure sensor
|
US7538401B2
(en)
*
|
2005-05-03 |
2009-05-26 |
Rosemount Aerospace Inc. |
Transducer for use in harsh environments
|
FR2886051B1
(fr)
*
|
2005-05-20 |
2007-08-10 |
Commissariat Energie Atomique |
Procede de detachement d'un film mince
|
US20060270190A1
(en)
*
|
2005-05-25 |
2006-11-30 |
The Regents Of The University Of California |
Method of transferring a thin crystalline semiconductor layer
|
US7560789B2
(en)
*
|
2005-05-27 |
2009-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US7605055B2
(en)
*
|
2005-06-02 |
2009-10-20 |
S.O.I.Tec Silicon On Insulator Technologies |
Wafer with diamond layer
|
US7473985B2
(en)
*
|
2005-06-16 |
2009-01-06 |
International Business Machines Corporation |
Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates
|
US7358164B2
(en)
*
|
2005-06-16 |
2008-04-15 |
International Business Machines Corporation |
Crystal imprinting methods for fabricating substrates with thin active silicon layers
|
US7262112B2
(en)
*
|
2005-06-27 |
2007-08-28 |
The Regents Of The University Of California |
Method for producing dislocation-free strained crystalline films
|
US7754008B2
(en)
*
|
2005-07-19 |
2010-07-13 |
The Regents Of The University Of California |
Method of forming dislocation-free strained thin films
|
US20090130816A1
(en)
*
|
2005-07-22 |
2009-05-21 |
Sumco Corporation |
Method for manufacturing simox wafer and simox wafer manufactured thereby
|
US7635637B2
(en)
*
|
2005-07-25 |
2009-12-22 |
Fairchild Semiconductor Corporation |
Semiconductor structures formed on substrates and methods of manufacturing the same
|
WO2007019277A2
(en)
*
|
2005-08-03 |
2007-02-15 |
California Institute Of Technology |
Method of forming semiconductor layers on handle substrates
|
US8795926B2
(en)
|
2005-08-11 |
2014-08-05 |
Intelligent Energy Limited |
Pump assembly for a fuel cell system
|
FR2889887B1
(fr)
*
|
2005-08-16 |
2007-11-09 |
Commissariat Energie Atomique |
Procede de report d'une couche mince sur un support
|
US7268051B2
(en)
*
|
2005-08-26 |
2007-09-11 |
Corning Incorporated |
Semiconductor on glass insulator with deposited barrier layer
|
DE102005052357A1
(de)
|
2005-09-01 |
2007-03-15 |
Osram Opto Semiconductors Gmbh |
Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
|
DE102005052358A1
(de)
*
|
2005-09-01 |
2007-03-15 |
Osram Opto Semiconductors Gmbh |
Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
|
FR2891281B1
(fr)
|
2005-09-28 |
2007-12-28 |
Commissariat Energie Atomique |
Procede de fabrication d'un element en couches minces.
|
US7153761B1
(en)
|
2005-10-03 |
2006-12-26 |
Los Alamos National Security, Llc |
Method of transferring a thin crystalline semiconductor layer
|
US7638410B2
(en)
*
|
2005-10-03 |
2009-12-29 |
Los Alamos National Security, Llc |
Method of transferring strained semiconductor structure
|
DE102006025673B9
(de)
|
2005-10-28 |
2010-12-16 |
Infineon Technologies Ag |
Rechenwerk zum Reduzieren einer Eingabe-Zahl bezüglich eines Moduls
|
US7535089B2
(en)
*
|
2005-11-01 |
2009-05-19 |
Massachusetts Institute Of Technology |
Monolithically integrated light emitting devices
|
DE102005054218B4
(de)
*
|
2005-11-14 |
2011-06-09 |
Infineon Technologies Ag |
Verfahren zum Herstellen eines Halbleiterelements und Halbleiterelement
|
DE102005054219B4
(de)
|
2005-11-14 |
2011-06-22 |
Infineon Technologies AG, 81669 |
Verfahren zum Herstellen eines Feldeffekttransistors und Feldeffekttransistor
|
FR2893446B1
(fr)
*
|
2005-11-16 |
2008-02-15 |
Soitec Silicon Insulator Techn |
TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE
|
US7691730B2
(en)
*
|
2005-11-22 |
2010-04-06 |
Corning Incorporated |
Large area semiconductor on glass insulator
|
JP2007149723A
(ja)
*
|
2005-11-24 |
2007-06-14 |
Sumco Corp |
貼り合わせウェーハの製造方法
|
WO2007067589A2
(en)
*
|
2005-12-05 |
2007-06-14 |
Massachusetts Institute Of Technology |
Insulated gate devices and method of making same
|
EP1798764A1
(de)
*
|
2005-12-14 |
2007-06-20 |
STMicroelectronics S.r.l. |
Verfahren zur Herstellung von Wafers für die Halbleiterindustrie
|
US7456080B2
(en)
*
|
2005-12-19 |
2008-11-25 |
Corning Incorporated |
Semiconductor on glass insulator made using improved ion implantation process
|
JP2007173354A
(ja)
|
2005-12-20 |
2007-07-05 |
Shin Etsu Chem Co Ltd |
Soi基板およびsoi基板の製造方法
|
FR2895563B1
(fr)
*
|
2005-12-22 |
2008-04-04 |
Soitec Silicon On Insulator |
Procede de simplification d'une sequence de finition et structure obtenue par le procede
|
JP5168788B2
(ja)
*
|
2006-01-23 |
2013-03-27 |
信越半導体株式会社 |
Soiウエーハの製造方法
|
DE102006007293B4
(de)
*
|
2006-01-31 |
2023-04-06 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
|
JP5064692B2
(ja)
|
2006-02-09 |
2012-10-31 |
信越化学工業株式会社 |
Soi基板の製造方法
|
JP5064695B2
(ja)
|
2006-02-16 |
2012-10-31 |
信越化学工業株式会社 |
Soi基板の製造方法
|
JP4625775B2
(ja)
*
|
2006-02-17 |
2011-02-02 |
株式会社アルバック |
イオン注入装置
|
DK1989740T4
(da)
*
|
2006-02-28 |
2019-08-26 |
Hanwha Q Cells Gmbh |
Fremgangsmåde til solcellemarkering og solcelle
|
JP5041714B2
(ja)
*
|
2006-03-13 |
2012-10-03 |
信越化学工業株式会社 |
マイクロチップ及びマイクロチップ製造用soi基板
|
FR2898431B1
(fr)
*
|
2006-03-13 |
2008-07-25 |
Soitec Silicon On Insulator |
Procede de fabrication de film mince
|
JP5128781B2
(ja)
*
|
2006-03-13 |
2013-01-23 |
信越化学工業株式会社 |
光電変換素子用基板の製造方法
|
US7863157B2
(en)
*
|
2006-03-17 |
2011-01-04 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a layer transfer process
|
FR2899378B1
(fr)
|
2006-03-29 |
2008-06-27 |
Commissariat Energie Atomique |
Procede de detachement d'un film mince par fusion de precipites
|
WO2007118121A2
(en)
*
|
2006-04-05 |
2007-10-18 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a layer transfer process
|
US7635635B2
(en)
*
|
2006-04-06 |
2009-12-22 |
Fairchild Semiconductor Corporation |
Method for bonding a semiconductor substrate to a metal substrate
|
US20070243703A1
(en)
*
|
2006-04-14 |
2007-10-18 |
Aonex Technololgies, Inc. |
Processes and structures for epitaxial growth on laminate substrates
|
EP1863100A1
(de)
*
|
2006-05-30 |
2007-12-05 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) |
Verfahren zur Herstellung von dünnen Substraten
|
US20080012087A1
(en)
*
|
2006-04-19 |
2008-01-17 |
Henri Dautet |
Bonded wafer avalanche photodiode and method for manufacturing same
|
US7659178B2
(en)
*
|
2006-04-21 |
2010-02-09 |
International Business Machines Corporation |
Semiconductor device structures with reduced junction capacitance and drain induced barrier lowering and methods for fabricating such device structures and for fabricating a semiconductor-on-insulator substrate
|
US7984408B2
(en)
*
|
2006-04-21 |
2011-07-19 |
International Business Machines Corporation |
Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering
|
US20070249098A1
(en)
*
|
2006-04-21 |
2007-10-25 |
Raymond Charles Cady |
Bonding plate mechanism for use in anodic bonding
|
DE102006061167A1
(de)
*
|
2006-04-25 |
2007-12-20 |
Osram Opto Semiconductors Gmbh |
Optoelektronisches Halbleiterbauelement
|
TW200802544A
(en)
*
|
2006-04-25 |
2008-01-01 |
Osram Opto Semiconductors Gmbh |
Composite substrate and method for making the same
|
EP2012346B1
(de)
*
|
2006-04-27 |
2016-05-11 |
Shin-Etsu Handotai Co., Ltd. |
Soi-wafer-herstellungsverfahren
|
FR2900400B1
(fr)
|
2006-04-28 |
2008-11-07 |
Tronic S Microsystems Sa |
Procede collectif de fabrication de membranes et de cavites de faible volume et de haute precision
|
US20070264796A1
(en)
*
|
2006-05-12 |
2007-11-15 |
Stocker Mark A |
Method for forming a semiconductor on insulator structure
|
US20070277874A1
(en)
*
|
2006-05-31 |
2007-12-06 |
David Francis Dawson-Elli |
Thin film photovoltaic structure
|
US20070277875A1
(en)
*
|
2006-05-31 |
2007-12-06 |
Kishor Purushottam Gadkaree |
Thin film photovoltaic structure
|
FR2902233B1
(fr)
*
|
2006-06-09 |
2008-10-17 |
Soitec Silicon On Insulator |
Procede de limitation de diffusion en mode lacunaire dans une heterostructure
|
FR2902234B1
(fr)
*
|
2006-06-12 |
2008-10-10 |
Commissariat Energie Atomique |
PROCEDE DE REALISATION DE ZONES A BASE DE Si1-yGey DE DIFFERENTES TENEURS EN Ge SUR UN MEME SUBSTRAT PAR CONDENSATION DE GERMANIUM
|
DE602007000665D1
(de)
*
|
2006-06-12 |
2009-04-23 |
St Microelectronics Sa |
Verfahren zur Herstellung von auf Si1-yGey basierenden Zonen mit unterschiedlichen Ge-Gehalten auf ein und demselben Substrat mittels Kondensation von Germanium
|
FR2902926B1
(fr)
*
|
2006-06-22 |
2008-10-24 |
Commissariat Energie Atomique |
Procede et dispositif de suivi d'un traitement thermique d'un substrat microtechnologique.
|
US8063397B2
(en)
*
|
2006-06-28 |
2011-11-22 |
Massachusetts Institute Of Technology |
Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
|
JP5314838B2
(ja)
*
|
2006-07-14 |
2013-10-16 |
信越半導体株式会社 |
剥離ウェーハを再利用する方法
|
EP1901345A1
(de)
|
2006-08-30 |
2008-03-19 |
Siltronic AG |
Mehrlagiger Halbleiterwafer und entsprechendes Verfahren
|
US20080057678A1
(en)
*
|
2006-08-31 |
2008-03-06 |
Kishor Purushottam Gadkaree |
Semiconductor on glass insulator made using improved hydrogen reduction process
|
JP2008060355A
(ja)
|
2006-08-31 |
2008-03-13 |
Sumco Corp |
貼り合わせウェーハの製造方法および貼り合わせウェーハ
|
JP2008066500A
(ja)
*
|
2006-09-07 |
2008-03-21 |
Sumco Corp |
貼り合わせウェーハおよびその製造方法
|
US7811900B2
(en)
|
2006-09-08 |
2010-10-12 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a thick layer transfer process
|
US8993410B2
(en)
|
2006-09-08 |
2015-03-31 |
Silicon Genesis Corporation |
Substrate cleaving under controlled stress conditions
|
US8293619B2
(en)
|
2008-08-28 |
2012-10-23 |
Silicon Genesis Corporation |
Layer transfer of films utilizing controlled propagation
|
US9362439B2
(en)
|
2008-05-07 |
2016-06-07 |
Silicon Genesis Corporation |
Layer transfer of films utilizing controlled shear region
|
FR2905801B1
(fr)
*
|
2006-09-12 |
2008-12-05 |
Soitec Silicon On Insulator |
Procede de transfert d'une couche a haute temperature
|
WO2008121159A2
(en)
*
|
2006-10-19 |
2008-10-09 |
Los Alamos National Security Llc |
Active terahertz metamaterial devices
|
JP2008112840A
(ja)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
|
JP2008112847A
(ja)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
|
JP2008112848A
(ja)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
|
JP2008112843A
(ja)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
|
JP5284576B2
(ja)
|
2006-11-10 |
2013-09-11 |
信越化学工業株式会社 |
半導体基板の製造方法
|
JP5044195B2
(ja)
|
2006-11-10 |
2012-10-10 |
信越化学工業株式会社 |
Soq基板の製造方法
|
JP5249511B2
(ja)
|
2006-11-22 |
2013-07-31 |
信越化学工業株式会社 |
Soq基板およびsoq基板の製造方法
|
JP5090716B2
(ja)
*
|
2006-11-24 |
2012-12-05 |
信越化学工業株式会社 |
単結晶シリコン太陽電池の製造方法
|
FR2910179B1
(fr)
|
2006-12-19 |
2009-03-13 |
Commissariat Energie Atomique |
PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
|
JP4820801B2
(ja)
*
|
2006-12-26 |
2011-11-24 |
株式会社Sumco |
貼り合わせウェーハの製造方法
|
FR2911431B1
(fr)
*
|
2007-01-16 |
2009-05-15 |
Soitec Silicon On Insulator |
Procede de fabrication de structures soi a couche isolante d'epaisseur controlee
|
US7838174B2
(en)
*
|
2007-01-24 |
2010-11-23 |
Sharp Laboratories Of America, Inc. |
Method of fabricating grayscale mask using smart cut® wafer bonding process
|
US20080188011A1
(en)
*
|
2007-01-26 |
2008-08-07 |
Silicon Genesis Corporation |
Apparatus and method of temperature conrol during cleaving processes of thick film materials
|
US7682761B2
(en)
*
|
2007-02-20 |
2010-03-23 |
Sharp Laboratories Of America, Inc. |
Method of fabricating a grayscale mask using a wafer bonding process
|
JP5256625B2
(ja)
*
|
2007-03-05 |
2013-08-07 |
株式会社Sumco |
貼り合わせウェーハの評価方法
|
TW200837965A
(en)
*
|
2007-03-05 |
2008-09-16 |
Univ Nat Taiwan |
Photodetector
|
JP5166745B2
(ja)
*
|
2007-03-07 |
2013-03-21 |
信越化学工業株式会社 |
単結晶シリコン太陽電池の製造方法
|
US7755113B2
(en)
*
|
2007-03-16 |
2010-07-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device
|
WO2008123116A1
(en)
*
|
2007-03-26 |
2008-10-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Soi substrate and method for manufacturing soi substrate
|
WO2008123117A1
(en)
*
|
2007-03-26 |
2008-10-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Soi substrate and method for manufacturing soi substrate
|
US7875881B2
(en)
*
|
2007-04-03 |
2011-01-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
CN101281912B
(zh)
|
2007-04-03 |
2013-01-23 |
株式会社半导体能源研究所 |
Soi衬底及其制造方法以及半导体装置
|
US20080248629A1
(en)
*
|
2007-04-06 |
2008-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor substrate
|
JP5048380B2
(ja)
*
|
2007-04-09 |
2012-10-17 |
信越化学工業株式会社 |
単結晶シリコン太陽電池の製造方法
|
JP5220335B2
(ja)
|
2007-04-11 |
2013-06-26 |
信越化学工業株式会社 |
Soi基板の製造方法
|
JP2008263087A
(ja)
|
2007-04-12 |
2008-10-30 |
Shin Etsu Chem Co Ltd |
Soi基板の製造方法
|
WO2008132894A1
(en)
|
2007-04-13 |
2008-11-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, method for manufacturing display device, and soi substrate
|
JP2007201502A
(ja)
*
|
2007-04-20 |
2007-08-09 |
Semiconductor Energy Lab Co Ltd |
半導体装置およびその作製方法
|
US7732301B1
(en)
|
2007-04-20 |
2010-06-08 |
Pinnington Thomas Henry |
Bonded intermediate substrate and method of making same
|
US7619283B2
(en)
*
|
2007-04-20 |
2009-11-17 |
Corning Incorporated |
Methods of fabricating glass-based substrates and apparatus employing same
|
KR101440930B1
(ko)
*
|
2007-04-20 |
2014-09-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
Soi 기판의 제작방법
|
JP5348916B2
(ja)
*
|
2007-04-25 |
2013-11-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
EP1986230A2
(de)
*
|
2007-04-25 |
2008-10-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Verfahren zur Herstellung eines SOI-Substrats und Verfahren zur Herstellung einer Halbleitervorrichtung
|
FR2915625B1
(fr)
|
2007-04-27 |
2009-10-02 |
Soitec Silicon On Insulator |
Procede de transfert d'une couche epitaxiale
|
US7635617B2
(en)
*
|
2007-04-27 |
2009-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
|
JP5350655B2
(ja)
*
|
2007-04-27 |
2013-11-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP5289805B2
(ja)
*
|
2007-05-10 |
2013-09-11 |
株式会社半導体エネルギー研究所 |
半導体装置製造用基板の作製方法
|
KR101443580B1
(ko)
*
|
2007-05-11 |
2014-10-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
Soi구조를 갖는 기판
|
US7867805B2
(en)
*
|
2007-05-13 |
2011-01-11 |
International Business Machines Corporation |
Structure replication through ultra thin layer transfer
|
US7833886B2
(en)
*
|
2007-05-14 |
2010-11-16 |
Infineon Technologies Ag |
Method of producing a semiconductor element in a substrate
|
US8513678B2
(en)
*
|
2007-05-18 |
2013-08-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device
|
KR101400699B1
(ko)
*
|
2007-05-18 |
2014-05-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기판 및 반도체 장치 및 그 제조 방법
|
US8803781B2
(en)
*
|
2007-05-18 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device
|
EP1993126B1
(de)
*
|
2007-05-18 |
2011-09-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Verfahren zur Herstellung eines Halbleitersubstrats
|
US9059247B2
(en)
*
|
2007-05-18 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate and method for manufacturing semiconductor device
|
EP1993127B1
(de)
*
|
2007-05-18 |
2013-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Verfahren zur Herstellung eines SOI-Substrats
|
TWI335046B
(en)
*
|
2007-05-25 |
2010-12-21 |
Univ Nat Taiwan |
Flexible electronic device and process for the same
|
US8389099B1
(en)
|
2007-06-01 |
2013-03-05 |
Rubicon Technology, Inc. |
Asymmetrical wafer configurations and method for creating the same
|
TWI360232B
(en)
*
|
2007-06-12 |
2012-03-11 |
Univ Nat Taiwan |
Method for manufacturing photodetector
|
US7875532B2
(en)
*
|
2007-06-15 |
2011-01-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Substrate for manufacturing semiconductor device and manufacturing method thereof
|
US8348720B1
(en)
|
2007-06-19 |
2013-01-08 |
Rubicon Technology, Inc. |
Ultra-flat, high throughput wafer lapping process
|
US7781306B2
(en)
*
|
2007-06-20 |
2010-08-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor substrate and method for manufacturing the same
|
US7763502B2
(en)
*
|
2007-06-22 |
2010-07-27 |
Semiconductor Energy Laboratory Co., Ltd |
Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device
|
KR101484296B1
(ko)
|
2007-06-26 |
2015-01-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기판의 제작방법
|
US20090004764A1
(en)
*
|
2007-06-29 |
2009-01-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate and method for manufacturing semiconductor device
|
US20090004426A1
(en)
*
|
2007-06-29 |
2009-01-01 |
Memc Electronic Materials, Inc. |
Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
|
US8354674B2
(en)
|
2007-06-29 |
2013-01-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
|
EP2009687B1
(de)
*
|
2007-06-29 |
2016-08-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Verfahren zur Herstellung eines SOI-Substrats und Verfahren zur Herstellung einer Halbleitervorrichtung
|
US20090004458A1
(en)
*
|
2007-06-29 |
2009-01-01 |
Memc Electronic Materials, Inc. |
Diffusion Control in Heavily Doped Substrates
|
US8049253B2
(en)
|
2007-07-11 |
2011-11-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
FR2918793B1
(fr)
|
2007-07-11 |
2009-10-09 |
Commissariat Energie Atomique |
Procede de fabrication d'un substrat semiconducteur-sur- isolant pour la microelectronique et l'optoelectronique.
|
US7790563B2
(en)
*
|
2007-07-13 |
2010-09-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic device and method for manufacturing semiconductor device
|
JP5498670B2
(ja)
*
|
2007-07-13 |
2014-05-21 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法
|
US20100193900A1
(en)
*
|
2007-07-13 |
2010-08-05 |
National University Corporation Tohoku University |
Soi substrate and semiconductor device using an soi substrate
|
JP5486781B2
(ja)
*
|
2007-07-19 |
2014-05-07 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP5442224B2
(ja)
*
|
2007-07-23 |
2014-03-12 |
株式会社半導体エネルギー研究所 |
Soi基板の製造方法
|
US20090278233A1
(en)
*
|
2007-07-26 |
2009-11-12 |
Pinnington Thomas Henry |
Bonded intermediate substrate and method of making same
|
JP5135935B2
(ja)
*
|
2007-07-27 |
2013-02-06 |
信越半導体株式会社 |
貼り合わせウエーハの製造方法
|
US20090032873A1
(en)
*
|
2007-07-30 |
2009-02-05 |
Jeffrey Scott Cites |
Ultra thin single crystalline semiconductor TFT and process for making same
|
FR2919960B1
(fr)
|
2007-08-08 |
2010-05-21 |
Soitec Silicon On Insulator |
Procede et installation pour la fracture d'un substrat composite selon un plan de fragilisation
|
US20090061593A1
(en)
*
|
2007-08-28 |
2009-03-05 |
Kishor Purushottam Gadkaree |
Semiconductor Wafer Re-Use in an Exfoliation Process Using Heat Treatment
|
JP2009076890A
(ja)
*
|
2007-08-31 |
2009-04-09 |
Semiconductor Energy Lab Co Ltd |
半導体装置の作製方法、半導体装置、及び電子機器
|
US20090068784A1
(en)
*
|
2007-09-10 |
2009-03-12 |
Seoung Hyun Kim |
Method for Manufacturing of the Image Sensor
|
JP2009088500A
(ja)
*
|
2007-09-14 |
2009-04-23 |
Semiconductor Energy Lab Co Ltd |
Soi基板の作製方法
|
JP5250228B2
(ja)
*
|
2007-09-21 |
2013-07-31 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TWI437696B
(zh)
*
|
2007-09-21 |
2014-05-11 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
JP2009094488A
(ja)
*
|
2007-09-21 |
2009-04-30 |
Semiconductor Energy Lab Co Ltd |
半導体膜付き基板の作製方法
|
JP5452900B2
(ja)
*
|
2007-09-21 |
2014-03-26 |
株式会社半導体エネルギー研究所 |
半導体膜付き基板の作製方法
|
US8101500B2
(en)
|
2007-09-27 |
2012-01-24 |
Fairchild Semiconductor Corporation |
Semiconductor device with (110)-oriented silicon
|
US8128749B2
(en)
*
|
2007-10-04 |
2012-03-06 |
International Business Machines Corporation |
Fabrication of SOI with gettering layer
|
KR101499175B1
(ko)
*
|
2007-10-04 |
2015-03-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기판의 제조방법
|
JP5511173B2
(ja)
*
|
2007-10-10 |
2014-06-04 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP5522917B2
(ja)
|
2007-10-10 |
2014-06-18 |
株式会社半導体エネルギー研究所 |
Soi基板の製造方法
|
JP5490393B2
(ja)
*
|
2007-10-10 |
2014-05-14 |
株式会社半導体エネルギー研究所 |
半導体基板の製造方法
|
US7799658B2
(en)
|
2007-10-10 |
2010-09-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
|
JP5527956B2
(ja)
*
|
2007-10-10 |
2014-06-25 |
株式会社半導体エネルギー研究所 |
半導体基板の製造方法
|
JP5506172B2
(ja)
*
|
2007-10-10 |
2014-05-28 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法
|
US8101501B2
(en)
*
|
2007-10-10 |
2012-01-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
US8455331B2
(en)
*
|
2007-10-10 |
2013-06-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
JP2009135430A
(ja)
*
|
2007-10-10 |
2009-06-18 |
Semiconductor Energy Lab Co Ltd |
半導体装置の作製方法
|
US8236668B2
(en)
*
|
2007-10-10 |
2012-08-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
FR2922359B1
(fr)
*
|
2007-10-12 |
2009-12-18 |
Commissariat Energie Atomique |
Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
|
US7955950B2
(en)
*
|
2007-10-18 |
2011-06-07 |
International Business Machines Corporation |
Semiconductor-on-insulator substrate with a diffusion barrier
|
FR2922681A1
(fr)
|
2007-10-23 |
2009-04-24 |
Soitec Silicon On Insulator |
Procede de detachement d'un substrat.
|
TWI493609B
(zh)
*
|
2007-10-23 |
2015-07-21 |
Semiconductor Energy Lab |
半導體基板、顯示面板及顯示裝置的製造方法
|
JP2009105315A
(ja)
|
2007-10-25 |
2009-05-14 |
Shin Etsu Chem Co Ltd |
半導体基板の製造方法
|
US8163628B2
(en)
*
|
2007-11-01 |
2012-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor substrate
|
WO2009057669A1
(en)
*
|
2007-11-01 |
2009-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing photoelectric conversion device
|
JP5548351B2
(ja)
*
|
2007-11-01 |
2014-07-16 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP5688203B2
(ja)
*
|
2007-11-01 |
2015-03-25 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法
|
US7851318B2
(en)
*
|
2007-11-01 |
2010-12-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
|
JP5548356B2
(ja)
*
|
2007-11-05 |
2014-07-16 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US20090124038A1
(en)
*
|
2007-11-14 |
2009-05-14 |
Mark Ewing Tuttle |
Imager device, camera, and method of manufacturing a back side illuminated imager
|
WO2009069286A1
(ja)
*
|
2007-11-27 |
2009-06-04 |
Sophia School Corporation |
Iii族窒化物構造体およびiii族窒化物構造体の製造方法
|
US20090139558A1
(en)
*
|
2007-11-29 |
2009-06-04 |
Shunpei Yamazaki |
Photoelectric conversion device and manufacturing method thereof
|
US7863169B2
(en)
*
|
2007-11-30 |
2011-01-04 |
International Business Machines Corporation |
Lithography for printing constant line width features
|
US20090141004A1
(en)
|
2007-12-03 |
2009-06-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and method for manufacturing the same
|
US7781308B2
(en)
*
|
2007-12-03 |
2010-08-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
JP5464843B2
(ja)
*
|
2007-12-03 |
2014-04-09 |
株式会社半導体エネルギー研究所 |
Soi基板の作製方法
|
EP2232528A4
(de)
*
|
2007-12-14 |
2015-06-17 |
Oned Material Llc |
Verfahren zur bildung von substratelementen
|
FR2925221B1
(fr)
|
2007-12-17 |
2010-02-19 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince
|
FR2925748B1
(fr)
*
|
2007-12-21 |
2010-01-29 |
Commissariat Energie Atomique |
Support de stockage de donnees et procede associe
|
JP5459900B2
(ja)
*
|
2007-12-25 |
2014-04-02 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US7842583B2
(en)
*
|
2007-12-27 |
2010-11-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
|
CN101884096B
(zh)
*
|
2007-12-28 |
2012-06-20 |
夏普株式会社 |
半导体装置及其制造方法
|
US7927092B2
(en)
*
|
2007-12-31 |
2011-04-19 |
Corning Incorporated |
Apparatus for forming a slurry polishing pad
|
EP2077576A1
(de)
*
|
2008-01-04 |
2009-07-08 |
S.O.I.Tec Silicon on Insulator Technologies |
Verfahren zur Herstellung von gereinigten, für epitaxiales Wachstum geeigneten Substraten
|
US20090181492A1
(en)
*
|
2008-01-11 |
2009-07-16 |
Peter Nunan |
Nano-cleave a thin-film of silicon for solar cell fabrication
|
JP5404064B2
(ja)
*
|
2008-01-16 |
2014-01-29 |
株式会社半導体エネルギー研究所 |
レーザ処理装置、および半導体基板の作製方法
|
US20090179160A1
(en)
*
|
2008-01-16 |
2009-07-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor substrate manufacturing apparatus
|
WO2009092926A1
(fr)
*
|
2008-01-21 |
2009-07-30 |
Michel Roche |
Procédé et appareillages associés, destiné à la fabrication de substrats semiconducteurs, poly ou monocristallins minces
|
JP5503876B2
(ja)
*
|
2008-01-24 |
2014-05-28 |
株式会社半導体エネルギー研究所 |
半導体基板の製造方法
|
US20090194152A1
(en)
*
|
2008-02-04 |
2009-08-06 |
National Taiwan University |
Thin-film solar cell having hetero-junction of semiconductor and method for fabricating the same
|
US7858495B2
(en)
*
|
2008-02-04 |
2010-12-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
US8563352B2
(en)
*
|
2008-02-05 |
2013-10-22 |
Gtat Corporation |
Creation and translation of low-relief texture for a photovoltaic cell
|
US8481845B2
(en)
*
|
2008-02-05 |
2013-07-09 |
Gtat Corporation |
Method to form a photovoltaic cell comprising a thin lamina
|
US8129613B2
(en)
*
|
2008-02-05 |
2012-03-06 |
Twin Creeks Technologies, Inc. |
Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
|
EP2088633A3
(de)
*
|
2008-02-05 |
2011-03-23 |
Twin Creeks Technologies, Inc. |
Verfahren zum Formen einer photovoltaischen Zelle mit dünner Schicht
|
CN101504930B
(zh)
|
2008-02-06 |
2013-10-16 |
株式会社半导体能源研究所 |
Soi衬底的制造方法
|
US7820527B2
(en)
*
|
2008-02-20 |
2010-10-26 |
Varian Semiconductor Equipment Associates, Inc. |
Cleave initiation using varying ion implant dose
|
US20090212397A1
(en)
*
|
2008-02-22 |
2009-08-27 |
Mark Ewing Tuttle |
Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit
|
DE102008019268A1
(de)
|
2008-02-29 |
2009-09-03 |
Osram Opto Semiconductors Gmbh |
Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
|
US8329260B2
(en)
*
|
2008-03-11 |
2012-12-11 |
Varian Semiconductor Equipment Associates, Inc. |
Cooled cleaving implant
|
JP2011517061A
(ja)
*
|
2008-03-13 |
2011-05-26 |
エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ |
絶縁埋め込み層に帯電領域を有する基板
|
US8003483B2
(en)
|
2008-03-18 |
2011-08-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
EP2105957A3
(de)
|
2008-03-26 |
2011-01-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Verfahren zur Herstellung eines SOI-Substrats und Verfahren zur Herstellung einer Halbleitervorrichtung
|
JP2009260313A
(ja)
*
|
2008-03-26 |
2009-11-05 |
Semiconductor Energy Lab Co Ltd |
Soi基板の作製方法及び半導体装置の作製方法
|
JP5654206B2
(ja)
*
|
2008-03-26 |
2015-01-14 |
株式会社半導体エネルギー研究所 |
Soi基板の作製方法及び該soi基板を用いた半導体装置
|
JP2009260315A
(ja)
*
|
2008-03-26 |
2009-11-05 |
Semiconductor Energy Lab Co Ltd |
Soi基板の作製方法及び半導体装置の作製方法
|
FR2929446B1
(fr)
|
2008-03-28 |
2011-08-05 |
Soitec Silicon On Insulator |
Implantation a temperature controlee
|
TWI492275B
(zh)
|
2008-04-10 |
2015-07-11 |
Shinetsu Chemical Co |
The method of manufacturing the bonded substrate
|
FR2930072B1
(fr)
*
|
2008-04-15 |
2010-08-20 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince par echange protonique.
|
US7939389B2
(en)
*
|
2008-04-18 |
2011-05-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP5496540B2
(ja)
*
|
2008-04-24 |
2014-05-21 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法
|
US8278802B1
(en)
|
2008-04-24 |
2012-10-02 |
Rf Micro Devices, Inc. |
Planarized sacrificial layer for MEMS fabrication
|
US7947523B2
(en)
*
|
2008-04-25 |
2011-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing photoelectric conversion device
|
US7687786B2
(en)
*
|
2008-05-16 |
2010-03-30 |
Twin Creeks Technologies, Inc. |
Ion implanter for noncircular wafers
|
FR2931585B1
(fr)
*
|
2008-05-26 |
2010-09-03 |
Commissariat Energie Atomique |
Traitement de surface par plasma d'azote dans un procede de collage direct
|
US8049104B2
(en)
*
|
2009-09-30 |
2011-11-01 |
Twin Creek Technologies, Inc. |
Intermetal stack for use in a photovoltaic cell
|
US8501522B2
(en)
|
2008-05-30 |
2013-08-06 |
Gtat Corporation |
Intermetal stack for use in a photovoltaic cell
|
JP2009295695A
(ja)
*
|
2008-06-03 |
2009-12-17 |
Sumco Corp |
半導体薄膜付基板およびその製造方法
|
US7956415B2
(en)
|
2008-06-05 |
2011-06-07 |
International Business Machines Corporation |
SOI transistor having a carrier recombination structure in a body
|
US7951656B2
(en)
*
|
2008-06-06 |
2011-05-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US8088672B2
(en)
*
|
2008-06-20 |
2012-01-03 |
Tien-Hsi Lee |
Producing a transferred layer by implanting ions through a sacrificial layer and an etching stop layer
|
US8207590B2
(en)
*
|
2008-07-03 |
2012-06-26 |
Samsung Electronics Co., Ltd. |
Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods
|
JP5700617B2
(ja)
|
2008-07-08 |
2015-04-15 |
株式会社半導体エネルギー研究所 |
Soi基板の作製方法
|
JP5552276B2
(ja)
*
|
2008-08-01 |
2014-07-16 |
株式会社半導体エネルギー研究所 |
Soi基板の作製方法
|
KR100882991B1
(ko)
*
|
2008-08-06 |
2009-02-12 |
주식회사 동부하이텍 |
후면 수광 이미지센서의 제조방법
|
US8338209B2
(en)
*
|
2008-08-10 |
2012-12-25 |
Twin Creeks Technologies, Inc. |
Photovoltaic cell comprising a thin lamina having a rear junction and method of making
|
US20100031995A1
(en)
*
|
2008-08-10 |
2010-02-11 |
Twin Creeks Technologies, Inc. |
Photovoltaic module comprising thin laminae configured to mitigate efficiency loss due to shunt formation
|
US20100032010A1
(en)
*
|
2008-08-10 |
2010-02-11 |
Twin Creeks Technologies, Inc. |
Method to mitigate shunt formation in a photovoltaic cell comprising a thin lamina
|
US7902091B2
(en)
*
|
2008-08-13 |
2011-03-08 |
Varian Semiconductor Equipment Associates, Inc. |
Cleaving of substrates
|
US20100044670A1
(en)
*
|
2008-08-19 |
2010-02-25 |
Peiching Ling |
Semiconductor device structures having single-crystalline switching device on conducting lines and methods thereof
|
EP2157602A1
(de)
|
2008-08-20 |
2010-02-24 |
Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. |
Verfahren zur Herstellung einer Vielzahl von Herstellungs-Wafern
|
US20100044827A1
(en)
*
|
2008-08-22 |
2010-02-25 |
Kinik Company |
Method for making a substrate structure comprising a film and substrate structure made by same method
|
US8330126B2
(en)
|
2008-08-25 |
2012-12-11 |
Silicon Genesis Corporation |
Race track configuration and method for wafering silicon solar substrates
|
JP5567569B2
(ja)
*
|
2008-08-27 |
2014-08-06 |
ソイテック |
選択した格子定数または制御した格子定数を有する半導体材料の層を使用する半導体構造または半導体デバイスを製造する方法
|
JP4666189B2
(ja)
|
2008-08-28 |
2011-04-06 |
信越半導体株式会社 |
Soiウェーハの製造方法
|
WO2010025218A2
(en)
*
|
2008-08-28 |
2010-03-04 |
The Regents Of The University Of California |
Composite semiconductor substrates for thin-film device layer transfer
|
JP5580010B2
(ja)
*
|
2008-09-05 |
2014-08-27 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US8039877B2
(en)
*
|
2008-09-09 |
2011-10-18 |
Fairchild Semiconductor Corporation |
(110)-oriented p-channel trench MOSFET having high-K gate dielectric
|
US8367520B2
(en)
*
|
2008-09-22 |
2013-02-05 |
Soitec |
Methods and structures for altering strain in III-nitride materials
|
KR20110063773A
(ko)
*
|
2008-09-24 |
2011-06-14 |
에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스 |
릴랙싱된 반도체 재료층들을 형성하는 방법들, 반도체 구조들, 디바이스들 및 그를 포함하는 엔지니어링된 기판들
|
US20100081251A1
(en)
*
|
2008-09-29 |
2010-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing soi substrate
|
US8048754B2
(en)
|
2008-09-29 |
2011-11-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer
|
SG160295A1
(en)
|
2008-09-29 |
2010-04-29 |
Semiconductor Energy Lab |
Method for manufacturing semiconductor device
|
US8871610B2
(en)
*
|
2008-10-02 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
SG160310A1
(en)
*
|
2008-10-02 |
2010-04-29 |
Semiconductor Energy Lab |
Manufacturing method of semiconductor substrate and semiconductor device
|
US8741740B2
(en)
*
|
2008-10-02 |
2014-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
SG160300A1
(en)
*
|
2008-10-03 |
2010-04-29 |
Semiconductor Energy Lab |
Method for manufacturing soi substrate
|
JP2010114431A
(ja)
*
|
2008-10-10 |
2010-05-20 |
Semiconductor Energy Lab Co Ltd |
Soi基板の作製方法
|
SG161151A1
(en)
*
|
2008-10-22 |
2010-05-27 |
Semiconductor Energy Lab |
Soi substrate and method for manufacturing the same
|
US8637383B2
(en)
|
2010-12-23 |
2014-01-28 |
Soitec |
Strain relaxation using metal materials and related structures
|
CN102203904B
(zh)
*
|
2008-10-30 |
2013-11-20 |
S.O.I.探测硅绝缘技术公司 |
形成具有减小的晶格应变的半导体材料层、半导体结构、装置的方法及包含具有减小的晶格应变的半导体材料层、半导体结构、装置的工程衬底
|
US8679942B2
(en)
|
2008-11-26 |
2014-03-25 |
Soitec |
Strain engineered composite semiconductor substrates and methods of forming same
|
JP5611571B2
(ja)
*
|
2008-11-27 |
2014-10-22 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法及び半導体装置の作製方法
|
JP5618521B2
(ja)
*
|
2008-11-28 |
2014-11-05 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP5493343B2
(ja)
*
|
2008-12-04 |
2014-05-14 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
US8151852B2
(en)
|
2009-06-30 |
2012-04-10 |
Twin Creeks Technologies, Inc. |
Bonding apparatus and method
|
SG182208A1
(en)
*
|
2008-12-15 |
2012-07-30 |
Semiconductor Energy Lab |
Manufacturing method of soi substrate and manufacturing method of semiconductor device
|
US8278167B2
(en)
|
2008-12-18 |
2012-10-02 |
Micron Technology, Inc. |
Method and structure for integrating capacitor-less memory cell with logic
|
JP2010177662A
(ja)
*
|
2009-01-05 |
2010-08-12 |
Semiconductor Energy Lab Co Ltd |
Soi基板の作製方法及び半導体装置の作製方法
|
US20100176495A1
(en)
|
2009-01-12 |
2010-07-15 |
International Business Machines Corporation |
Low cost fabrication of double box back gate silicon-on-insulator wafers
|
US20100176482A1
(en)
|
2009-01-12 |
2010-07-15 |
International Business Machine Corporation |
Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation
|
US20100187568A1
(en)
*
|
2009-01-28 |
2010-07-29 |
S.O.I.Tec Silicon On Insulator Technologies, S.A. |
Epitaxial methods and structures for forming semiconductor materials
|
US7927975B2
(en)
|
2009-02-04 |
2011-04-19 |
Micron Technology, Inc. |
Semiconductor material manufacture
|
FR2942073B1
(fr)
*
|
2009-02-10 |
2011-04-29 |
Soitec Silicon On Insulator |
Procede de realisation d'une couche de cavites
|
US20100216295A1
(en)
*
|
2009-02-24 |
2010-08-26 |
Alex Usenko |
Semiconductor on insulator made using improved defect healing process
|
JP5617835B2
(ja)
|
2009-02-24 |
2014-11-05 |
日本電気株式会社 |
半導体装置およびその製造方法
|
US8198172B2
(en)
|
2009-02-25 |
2012-06-12 |
Micron Technology, Inc. |
Methods of forming integrated circuits using donor and acceptor substrates
|
US20100224238A1
(en)
*
|
2009-03-06 |
2010-09-09 |
Twin Creeks Technologies, Inc. |
Photovoltaic cell comprising an mis-type tunnel diode
|
US8178396B2
(en)
|
2009-03-11 |
2012-05-15 |
Micron Technology, Inc. |
Methods for forming three-dimensional memory devices, and related structures
|
US8921686B2
(en)
|
2009-03-12 |
2014-12-30 |
Gtat Corporation |
Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
|
US20100229928A1
(en)
*
|
2009-03-12 |
2010-09-16 |
Twin Creeks Technologies, Inc. |
Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
|
JP5356872B2
(ja)
|
2009-03-18 |
2013-12-04 |
パナソニック株式会社 |
個体撮像装置の製造方法
|
US8048773B2
(en)
*
|
2009-03-24 |
2011-11-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
US8227763B2
(en)
*
|
2009-03-25 |
2012-07-24 |
Twin Creeks Technologies, Inc. |
Isolation circuit for transmitting AC power to a high-voltage region
|
US8378715B2
(en)
|
2009-04-14 |
2013-02-19 |
Monolithic 3D Inc. |
Method to construct systems
|
US9509313B2
(en)
|
2009-04-14 |
2016-11-29 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8405420B2
(en)
|
2009-04-14 |
2013-03-26 |
Monolithic 3D Inc. |
System comprising a semiconductor device and structure
|
US8058137B1
(en)
|
2009-04-14 |
2011-11-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8669778B1
(en)
|
2009-04-14 |
2014-03-11 |
Monolithic 3D Inc. |
Method for design and manufacturing of a 3D semiconductor device
|
US8373439B2
(en)
|
2009-04-14 |
2013-02-12 |
Monolithic 3D Inc. |
3D semiconductor device
|
US9577642B2
(en)
|
2009-04-14 |
2017-02-21 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device
|
US8754533B2
(en)
|
2009-04-14 |
2014-06-17 |
Monolithic 3D Inc. |
Monolithic three-dimensional semiconductor device and structure
|
US8427200B2
(en)
|
2009-04-14 |
2013-04-23 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8362482B2
(en)
|
2009-04-14 |
2013-01-29 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8258810B2
(en)
|
2010-09-30 |
2012-09-04 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8384426B2
(en)
|
2009-04-14 |
2013-02-26 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8395191B2
(en)
|
2009-10-12 |
2013-03-12 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US7986042B2
(en)
|
2009-04-14 |
2011-07-26 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US9711407B2
(en)
|
2009-04-14 |
2017-07-18 |
Monolithic 3D Inc. |
Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
|
US8362800B2
(en)
|
2010-10-13 |
2013-01-29 |
Monolithic 3D Inc. |
3D semiconductor device including field repairable logics
|
SG166060A1
(en)
|
2009-04-22 |
2010-11-29 |
Semiconductor Energy Lab |
Method of manufacturing soi substrate
|
JP5030992B2
(ja)
|
2009-04-30 |
2012-09-19 |
信越化学工業株式会社 |
サンドブラスト処理された裏面を有するsoi基板の製造方法
|
JP5420968B2
(ja)
|
2009-05-07 |
2014-02-19 |
信越化学工業株式会社 |
貼り合わせウェーハの製造方法
|
US8329557B2
(en)
|
2009-05-13 |
2012-12-11 |
Silicon Genesis Corporation |
Techniques for forming thin films by implantation with reduced channeling
|
US8043938B2
(en)
|
2009-05-14 |
2011-10-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate and SOI substrate
|
JP5619474B2
(ja)
*
|
2009-05-26 |
2014-11-05 |
株式会社半導体エネルギー研究所 |
Soi基板の作製方法
|
FR2947098A1
(fr)
|
2009-06-18 |
2010-12-24 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
|
DE102009030298B4
(de)
|
2009-06-24 |
2012-07-12 |
Siltronic Ag |
Verfahren zur lokalen Politur einer Halbleiterscheibe
|
JP2011029609A
(ja)
*
|
2009-06-26 |
2011-02-10 |
Semiconductor Energy Lab Co Ltd |
Soi基板の作製方法およびsoi基板
|
US7939812B2
(en)
*
|
2009-06-30 |
2011-05-10 |
Twin Creeks Technologies, Inc. |
Ion source assembly for ion implantation apparatus and a method of generating ions therein
|
US7989784B2
(en)
*
|
2009-06-30 |
2011-08-02 |
Twin Creeks Technologies, Inc. |
Ion implantation apparatus and a method
|
KR101431658B1
(ko)
|
2009-07-20 |
2014-08-21 |
소이텍 |
양자 점 구조물들을 이용한 반도체 구조물 및 소자들의 제조 방법들 및 관련된 구조물들
|
JP4481354B2
(ja)
*
|
2009-07-23 |
2010-06-16 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
WO2011011764A2
(en)
*
|
2009-07-23 |
2011-01-27 |
Gigasi Solar, Inc. |
Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes
|
US8361890B2
(en)
|
2009-07-28 |
2013-01-29 |
Gigasi Solar, Inc. |
Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes
|
US20110024876A1
(en)
*
|
2009-07-31 |
2011-02-03 |
Epir Technologies, Inc. |
Creation of thin group ii-vi monocrystalline layers by ion cutting techniques
|
US8148237B2
(en)
|
2009-08-07 |
2012-04-03 |
Varian Semiconductor Equipment Associates, Inc. |
Pressurized treatment of substrates to enhance cleaving process
|
WO2011020124A2
(en)
*
|
2009-08-14 |
2011-02-17 |
Gigasi Solar, Inc. |
Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof
|
GB0914251D0
(en)
|
2009-08-14 |
2009-09-30 |
Nat Univ Ireland Cork |
A hybrid substrate
|
JP4481358B2
(ja)
*
|
2009-08-20 |
2010-06-16 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US8318588B2
(en)
|
2009-08-25 |
2012-11-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
|
FR2949606B1
(fr)
|
2009-08-26 |
2011-10-28 |
Commissariat Energie Atomique |
Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation
|
US8590136B2
(en)
*
|
2009-08-28 |
2013-11-26 |
Analog Devices, Inc. |
Method of fabricating a dual single-crystal backplate microphone
|
US20110073967A1
(en)
*
|
2009-08-28 |
2011-03-31 |
Analog Devices, Inc. |
Apparatus and method of forming a mems acoustic transducer with layer transfer processes
|
JP5846727B2
(ja)
*
|
2009-09-04 |
2016-01-20 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法
|
US8021960B2
(en)
*
|
2009-10-06 |
2011-09-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
SG178179A1
(en)
|
2009-10-09 |
2012-03-29 |
Semiconductor Energy Lab |
Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate
|
US11374118B2
(en)
|
2009-10-12 |
2022-06-28 |
Monolithic 3D Inc. |
Method to form a 3D integrated circuit
|
US8742476B1
(en)
|
2012-11-27 |
2014-06-03 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8476145B2
(en)
|
2010-10-13 |
2013-07-02 |
Monolithic 3D Inc. |
Method of fabricating a semiconductor device and structure
|
US8581349B1
(en)
|
2011-05-02 |
2013-11-12 |
Monolithic 3D Inc. |
3D memory semiconductor device and structure
|
US10388863B2
(en)
|
2009-10-12 |
2019-08-20 |
Monolithic 3D Inc. |
3D memory device and structure
|
US10366970B2
(en)
|
2009-10-12 |
2019-07-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8450804B2
(en)
|
2011-03-06 |
2013-05-28 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US10910364B2
(en)
|
2009-10-12 |
2021-02-02 |
Monolitaic 3D Inc. |
3D semiconductor device
|
US10354995B2
(en)
|
2009-10-12 |
2019-07-16 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US11018133B2
(en)
|
2009-10-12 |
2021-05-25 |
Monolithic 3D Inc. |
3D integrated circuit
|
US8536023B2
(en)
|
2010-11-22 |
2013-09-17 |
Monolithic 3D Inc. |
Method of manufacturing a semiconductor device and structure
|
US8294159B2
(en)
|
2009-10-12 |
2012-10-23 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US10043781B2
(en)
|
2009-10-12 |
2018-08-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9099424B1
(en)
|
2012-08-10 |
2015-08-04 |
Monolithic 3D Inc. |
Semiconductor system, device and structure with heat removal
|
US10157909B2
(en)
|
2009-10-12 |
2018-12-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8241931B1
(en)
|
2009-10-19 |
2012-08-14 |
Analog Devices, Inc. |
Method of forming MEMS device with weakened substrate
|
JP5565768B2
(ja)
|
2009-10-23 |
2014-08-06 |
独立行政法人日本原子力研究開発機構 |
基板加工方法および半導体装置の製造方法
|
US8461566B2
(en)
*
|
2009-11-02 |
2013-06-11 |
Micron Technology, Inc. |
Methods, structures and devices for increasing memory density
|
US8587063B2
(en)
*
|
2009-11-06 |
2013-11-19 |
International Business Machines Corporation |
Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels
|
CN102741999B
(zh)
|
2009-11-18 |
2015-07-15 |
Soitec公司 |
使用玻璃键合层制造半导体结构和器件的方法,和用所述方法形成的半导体结构和器件
|
US8089050B2
(en)
*
|
2009-11-19 |
2012-01-03 |
Twin Creeks Technologies, Inc. |
Method and apparatus for modifying a ribbon-shaped ion beam
|
JP5866088B2
(ja)
*
|
2009-11-24 |
2016-02-17 |
株式会社半導体エネルギー研究所 |
Soi基板の作製方法
|
WO2011066485A2
(en)
*
|
2009-11-25 |
2011-06-03 |
Gigasi Solar, Inc. |
Systems, methods and products including features of laser irradiation and/or cleaving of silicon with other substrates or layers
|
US8524035B2
(en)
|
2009-11-30 |
2013-09-03 |
Corning Incorporated |
Method and apparatus for conformable polishing
|
US8148266B2
(en)
|
2009-11-30 |
2012-04-03 |
Corning Incorporated |
Method and apparatus for conformable polishing
|
FR2953328B1
(fr)
|
2009-12-01 |
2012-03-30 |
S O I Tec Silicon On Insulator Tech |
Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
|
FR2953640B1
(fr)
|
2009-12-04 |
2012-02-10 |
S O I Tec Silicon On Insulator Tech |
Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante
|
WO2011070855A1
(ja)
|
2009-12-11 |
2011-06-16 |
シャープ株式会社 |
半導体装置の製造方法および半導体装置
|
FR2954582B1
(fr)
|
2009-12-23 |
2017-11-03 |
Commissariat A L'energie Atomique |
Dispositif electromecanique a base d'electret, et son procede de fabrication
|
US8203153B2
(en)
|
2010-01-15 |
2012-06-19 |
Koninklijke Philips Electronics N.V. |
III-V light emitting device including a light extracting structure
|
US8105852B2
(en)
|
2010-01-15 |
2012-01-31 |
Koninklijke Philips Electronics N.V. |
Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
|
US8288249B2
(en)
*
|
2010-01-26 |
2012-10-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
US8367517B2
(en)
|
2010-01-26 |
2013-02-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
US8476147B2
(en)
*
|
2010-02-03 |
2013-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
SOI substrate and manufacturing method thereof
|
US8748288B2
(en)
|
2010-02-05 |
2014-06-10 |
International Business Machines Corporation |
Bonded structure with enhanced adhesion strength
|
US8026521B1
(en)
|
2010-10-11 |
2011-09-27 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8298875B1
(en)
|
2011-03-06 |
2012-10-30 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8492886B2
(en)
|
2010-02-16 |
2013-07-23 |
Monolithic 3D Inc |
3D integrated circuit with logic
|
US9099526B2
(en)
|
2010-02-16 |
2015-08-04 |
Monolithic 3D Inc. |
Integrated circuit device and structure
|
US8461035B1
(en)
|
2010-09-30 |
2013-06-11 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8373230B1
(en)
|
2010-10-13 |
2013-02-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8541819B1
(en)
|
2010-12-09 |
2013-09-24 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US20110207306A1
(en)
*
|
2010-02-22 |
2011-08-25 |
Sarko Cherekdjian |
Semiconductor structure made using improved ion implantation process
|
US8507966B2
(en)
|
2010-03-02 |
2013-08-13 |
Micron Technology, Inc. |
Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
|
US9646869B2
(en)
|
2010-03-02 |
2017-05-09 |
Micron Technology, Inc. |
Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
|
US8513722B2
(en)
|
2010-03-02 |
2013-08-20 |
Micron Technology, Inc. |
Floating body cell structures, devices including same, and methods for forming same
|
US9608119B2
(en)
|
2010-03-02 |
2017-03-28 |
Micron Technology, Inc. |
Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
|
US8288795B2
(en)
|
2010-03-02 |
2012-10-16 |
Micron Technology, Inc. |
Thyristor based memory cells, devices and systems including the same and methods for forming the same
|
JP5387451B2
(ja)
|
2010-03-04 |
2014-01-15 |
信越半導体株式会社 |
Soiウェーハの設計方法及び製造方法
|
JP5387450B2
(ja)
|
2010-03-04 |
2014-01-15 |
信越半導体株式会社 |
Soiウェーハの設計方法及び製造方法
|
US8349626B2
(en)
*
|
2010-03-23 |
2013-01-08 |
Gtat Corporation |
Creation of low-relief texture for a photovoltaic cell
|
EP2597671A3
(de)
*
|
2010-03-31 |
2013-09-25 |
EV Group E. Thallner GmbH |
Verfahren zum permanenten Verbinden zweier Metalloberflächen
|
US8377799B2
(en)
|
2010-03-31 |
2013-02-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing SOI substrate
|
CN102822970B
(zh)
|
2010-03-31 |
2015-06-17 |
Soitec公司 |
键合半导体结构及其形成方法
|
JP5755931B2
(ja)
|
2010-04-28 |
2015-07-29 |
株式会社半導体エネルギー研究所 |
半導体膜の作製方法、電極の作製方法、2次電池の作製方法、および太陽電池の作製方法
|
US8154052B2
(en)
|
2010-05-06 |
2012-04-10 |
Koninklijke Philips Electronics N.V. |
Light emitting device grown on wavelength converting substrate
|
US8536022B2
(en)
|
2010-05-19 |
2013-09-17 |
Koninklijke Philips N.V. |
Method of growing composite substrate using a relaxed strained layer
|
US8692261B2
(en)
|
2010-05-19 |
2014-04-08 |
Koninklijke Philips N.V. |
Light emitting device grown on a relaxed layer
|
US8723335B2
(en)
|
2010-05-20 |
2014-05-13 |
Sang-Yun Lee |
Semiconductor circuit structure and method of forming the same using a capping layer
|
FR2961515B1
(fr)
|
2010-06-22 |
2012-08-24 |
Commissariat Energie Atomique |
Procede de realisation d'une couche mince de silicium monocristallin sur une couche de polymere
|
FR2961948B1
(fr)
*
|
2010-06-23 |
2012-08-03 |
Soitec Silicon On Insulator |
Procede de traitement d'une piece en materiau compose
|
US8357974B2
(en)
|
2010-06-30 |
2013-01-22 |
Corning Incorporated |
Semiconductor on glass substrate with stiffening layer and process of making the same
|
US8557679B2
(en)
|
2010-06-30 |
2013-10-15 |
Corning Incorporated |
Oxygen plasma conversion process for preparing a surface for bonding
|
JP2013534057A
(ja)
|
2010-06-30 |
2013-08-29 |
コーニング インコーポレイテッド |
Soi基板に仕上げを施す方法
|
KR101134819B1
(ko)
|
2010-07-02 |
2012-04-13 |
이상윤 |
반도체 메모리 장치의 제조 방법
|
FR2962598B1
(fr)
|
2010-07-06 |
2012-08-17 |
Commissariat Energie Atomique |
Procede d'implantation d'un materiau piezoelectrique
|
FR2963162B1
(fr)
*
|
2010-07-26 |
2012-11-16 |
Soitec Silicon On Insulator |
Procedes de collage de structure semi-conductrice temporaire et structures semi-conductrices collees correspondantes
|
US8461017B2
(en)
|
2010-07-19 |
2013-06-11 |
Soitec |
Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
|
JP4948629B2
(ja)
*
|
2010-07-20 |
2012-06-06 |
ウシオ電機株式会社 |
レーザリフトオフ方法
|
US8642416B2
(en)
|
2010-07-30 |
2014-02-04 |
Monolithic 3D Inc. |
Method of forming three dimensional integrated circuit devices using layer transfer technique
|
US8901613B2
(en)
|
2011-03-06 |
2014-12-02 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US9219005B2
(en)
|
2011-06-28 |
2015-12-22 |
Monolithic 3D Inc. |
Semiconductor system and device
|
US9953925B2
(en)
|
2011-06-28 |
2018-04-24 |
Monolithic 3D Inc. |
Semiconductor system and device
|
EP2599112A4
(de)
|
2010-07-30 |
2017-07-26 |
MonolithIC 3D S.A. |
Halbleitervorrichtung und struktur damit
|
US10217667B2
(en)
|
2011-06-28 |
2019-02-26 |
Monolithic 3D Inc. |
3D semiconductor device, fabrication method and system
|
TW201214627A
(en)
|
2010-09-10 |
2012-04-01 |
Soitec Silicon On Insulator |
Methods of forming through wafer interconnects in semiconductor structures using sacrificial material and semiconductor structures formes by such methods
|
US11482440B2
(en)
|
2010-12-16 |
2022-10-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
|
US10497713B2
(en)
|
2010-11-18 |
2019-12-03 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US8273610B2
(en)
|
2010-11-18 |
2012-09-25 |
Monolithic 3D Inc. |
Method of constructing a semiconductor device and structure
|
US8163581B1
(en)
|
2010-10-13 |
2012-04-24 |
Monolith IC 3D |
Semiconductor and optoelectronic devices
|
US11158674B2
(en)
|
2010-10-11 |
2021-10-26 |
Monolithic 3D Inc. |
Method to produce a 3D semiconductor device and structure
|
US11257867B1
(en)
|
2010-10-11 |
2022-02-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with oxide bonds
|
US11600667B1
(en)
|
2010-10-11 |
2023-03-07 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11469271B2
(en)
|
2010-10-11 |
2022-10-11 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11024673B1
(en)
|
2010-10-11 |
2021-06-01 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11018191B1
(en)
|
2010-10-11 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8114757B1
(en)
|
2010-10-11 |
2012-02-14 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10290682B2
(en)
|
2010-10-11 |
2019-05-14 |
Monolithic 3D Inc. |
3D IC semiconductor device and structure with stacked memory
|
US11315980B1
(en)
|
2010-10-11 |
2022-04-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure with transistors
|
US10896931B1
(en)
|
2010-10-11 |
2021-01-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11227897B2
(en)
|
2010-10-11 |
2022-01-18 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US10943934B2
(en)
|
2010-10-13 |
2021-03-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US10978501B1
(en)
|
2010-10-13 |
2021-04-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US10679977B2
(en)
|
2010-10-13 |
2020-06-09 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US9197804B1
(en)
|
2011-10-14 |
2015-11-24 |
Monolithic 3D Inc. |
Semiconductor and optoelectronic devices
|
US11133344B2
(en)
|
2010-10-13 |
2021-09-28 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11694922B2
(en)
|
2010-10-13 |
2023-07-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11164898B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11043523B1
(en)
|
2010-10-13 |
2021-06-22 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11327227B2
(en)
|
2010-10-13 |
2022-05-10 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11605663B2
(en)
|
2010-10-13 |
2023-03-14 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11855100B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11929372B2
(en)
|
2010-10-13 |
2024-03-12 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11063071B1
(en)
|
2010-10-13 |
2021-07-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US11869915B2
(en)
|
2010-10-13 |
2024-01-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11437368B2
(en)
|
2010-10-13 |
2022-09-06 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US8379458B1
(en)
|
2010-10-13 |
2013-02-19 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8283215B2
(en)
|
2010-10-13 |
2012-10-09 |
Monolithic 3D Inc. |
Semiconductor and optoelectronic devices
|
US11855114B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11404466B2
(en)
|
2010-10-13 |
2022-08-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11163112B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US10833108B2
(en)
|
2010-10-13 |
2020-11-10 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US10998374B1
(en)
|
2010-10-13 |
2021-05-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US8487280B2
(en)
|
2010-10-21 |
2013-07-16 |
Varian Semiconductor Equipment Associates, Inc. |
Modulating implantation for improved workpiece splitting
|
WO2012060430A1
(ja)
|
2010-11-05 |
2012-05-10 |
シャープ株式会社 |
半導体基板、半導体基板の製造方法、薄膜トランジスタ、半導体回路、液晶表示装置、エレクトロルミネセンス装置、無線通信装置、及び発光装置
|
JP5902917B2
(ja)
|
2010-11-12 |
2016-04-13 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法
|
US11443971B2
(en)
|
2010-11-18 |
2022-09-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11004719B1
(en)
|
2010-11-18 |
2021-05-11 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11804396B2
(en)
|
2010-11-18 |
2023-10-31 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11164770B1
(en)
|
2010-11-18 |
2021-11-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11854857B1
(en)
|
2010-11-18 |
2023-12-26 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11107721B2
(en)
|
2010-11-18 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with NAND logic
|
US11121021B2
(en)
|
2010-11-18 |
2021-09-14 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11495484B2
(en)
|
2010-11-18 |
2022-11-08 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with at least two single-crystal layers
|
US11482438B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11355381B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11521888B2
(en)
|
2010-11-18 |
2022-12-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure with high-k metal gate transistors
|
US11735462B2
(en)
|
2010-11-18 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11615977B2
(en)
|
2010-11-18 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11610802B2
(en)
|
2010-11-18 |
2023-03-21 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
|
US11862503B2
(en)
|
2010-11-18 |
2024-01-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
FR2967813B1
(fr)
|
2010-11-18 |
2013-10-04 |
Soitec Silicon On Insulator |
Procédé de réalisation d'une structure a couche métallique enterrée
|
US11569117B2
(en)
|
2010-11-18 |
2023-01-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11901210B2
(en)
|
2010-11-18 |
2024-02-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11355380B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
|
US11784082B2
(en)
|
2010-11-18 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11094576B1
(en)
|
2010-11-18 |
2021-08-17 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11482439B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
|
US11031275B2
(en)
|
2010-11-18 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11018042B1
(en)
|
2010-11-18 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11923230B1
(en)
|
2010-11-18 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11508605B2
(en)
|
2010-11-18 |
2022-11-22 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11211279B2
(en)
|
2010-11-18 |
2021-12-28 |
Monolithic 3D Inc. |
Method for processing a 3D integrated circuit and structure
|
US8558195B2
(en)
|
2010-11-19 |
2013-10-15 |
Corning Incorporated |
Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process
|
US8008175B1
(en)
|
2010-11-19 |
2011-08-30 |
Coring Incorporated |
Semiconductor structure made using improved simultaneous multiple ion implantation process
|
US8196546B1
(en)
|
2010-11-19 |
2012-06-12 |
Corning Incorporated |
Semiconductor structure made using improved multiple ion implantation process
|
FR2968121B1
(fr)
|
2010-11-30 |
2012-12-21 |
Soitec Silicon On Insulator |
Procede de transfert d'une couche a haute temperature
|
FR2969664B1
(fr)
|
2010-12-22 |
2013-06-14 |
Soitec Silicon On Insulator |
Procede de clivage d'un substrat
|
WO2012085219A1
(en)
|
2010-12-23 |
2012-06-28 |
Soitec |
Strain relaxation using metal materials and related structures
|
JP2012156495A
(ja)
|
2011-01-07 |
2012-08-16 |
Semiconductor Energy Lab Co Ltd |
Soi基板の作製方法
|
US8486791B2
(en)
|
2011-01-19 |
2013-07-16 |
Macronix International Co., Ltd. |
Mufti-layer single crystal 3D stackable memory
|
TWI445061B
(zh)
*
|
2011-01-24 |
2014-07-11 |
Hon Hai Prec Ind Co Ltd |
氮化鎵基板的製作方法
|
US9082948B2
(en)
|
2011-02-03 |
2015-07-14 |
Soitec |
Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
|
US8436363B2
(en)
|
2011-02-03 |
2013-05-07 |
Soitec |
Metallic carrier for layer transfer and methods for forming the same
|
US9142412B2
(en)
|
2011-02-03 |
2015-09-22 |
Soitec |
Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
|
DE102011010751A1
(de)
|
2011-02-09 |
2012-08-09 |
Osram Opto Semiconductors Gmbh |
Verfahren zur Durchführung eines Epitaxieprozesses
|
US8598621B2
(en)
|
2011-02-11 |
2013-12-03 |
Micron Technology, Inc. |
Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
|
US8952418B2
(en)
|
2011-03-01 |
2015-02-10 |
Micron Technology, Inc. |
Gated bipolar junction transistors
|
US8975670B2
(en)
|
2011-03-06 |
2015-03-10 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US8519431B2
(en)
|
2011-03-08 |
2013-08-27 |
Micron Technology, Inc. |
Thyristors
|
US8338294B2
(en)
|
2011-03-31 |
2012-12-25 |
Soitec |
Methods of forming bonded semiconductor structures including two or more processed semiconductor structures carried by a common substrate, and semiconductor structures formed by such methods
|
US8970045B2
(en)
|
2011-03-31 |
2015-03-03 |
Soitec |
Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
|
US20120248621A1
(en)
*
|
2011-03-31 |
2012-10-04 |
S.O.I.Tec Silicon On Insulator Technologies |
Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods
|
JP5802436B2
(ja)
|
2011-05-30 |
2015-10-28 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
US8802534B2
(en)
|
2011-06-14 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming SOI substrate and apparatus for forming the same
|
US9123529B2
(en)
|
2011-06-21 |
2015-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
|
ITVI20110169A1
(it)
|
2011-06-27 |
2012-12-28 |
St Microelectronics Srl |
Dispositivo elettronico flessibile e metodo per la fabbricazione dello stesso
|
US10388568B2
(en)
|
2011-06-28 |
2019-08-20 |
Monolithic 3D Inc. |
3D semiconductor device and system
|
FR2978600B1
(fr)
|
2011-07-25 |
2014-02-07 |
Soitec Silicon On Insulator |
Procede et dispositif de fabrication de couche de materiau semi-conducteur
|
US8772848B2
(en)
|
2011-07-26 |
2014-07-08 |
Micron Technology, Inc. |
Circuit structures, memory circuitry, and methods
|
TWI500123B
(zh)
|
2011-08-09 |
2015-09-11 |
Soitec Silicon On Insulator |
包含內有一個或多個電性、光學及流體互連之互連層之黏附半導體構造之形成方法及應用此等方法形成之黏附半導體構造
|
US8842945B2
(en)
|
2011-08-09 |
2014-09-23 |
Soitec |
Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
|
US8728863B2
(en)
|
2011-08-09 |
2014-05-20 |
Soitec |
Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods
|
DE102011113775B9
(de)
|
2011-09-19 |
2021-10-21 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Verfahren zur Herstellung eines optoelektronischen Bauelements
|
US8673733B2
(en)
*
|
2011-09-27 |
2014-03-18 |
Soitec |
Methods of transferring layers of material in 3D integration processes and related structures and devices
|
TWI573198B
(zh)
|
2011-09-27 |
2017-03-01 |
索泰克公司 |
在三度空間集積製程中轉移材料層之方法及其相關結構與元件
|
US8841742B2
(en)
|
2011-09-27 |
2014-09-23 |
Soitec |
Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
|
US8687399B2
(en)
|
2011-10-02 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
JP5704039B2
(ja)
*
|
2011-10-06 |
2015-04-22 |
信越半導体株式会社 |
貼り合わせsoiウェーハの製造方法
|
JP5926527B2
(ja)
*
|
2011-10-17 |
2016-05-25 |
信越化学工業株式会社 |
透明soiウェーハの製造方法
|
JP5799740B2
(ja)
|
2011-10-17 |
2015-10-28 |
信越半導体株式会社 |
剥離ウェーハの再生加工方法
|
US9029173B2
(en)
|
2011-10-18 |
2015-05-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
CN104094399A
(zh)
|
2011-11-04 |
2014-10-08 |
斯兰纳私人集团有限公司 |
绝缘体上硅制品的制造方法
|
US10002968B2
(en)
|
2011-12-14 |
2018-06-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
JP5927894B2
(ja)
|
2011-12-15 |
2016-06-01 |
信越半導体株式会社 |
Soiウェーハの製造方法
|
WO2013093590A1
(en)
|
2011-12-23 |
2013-06-27 |
Soitec |
Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
|
US8822309B2
(en)
|
2011-12-23 |
2014-09-02 |
Athenaeum, Llc |
Heterogeneous integration process incorporating layer transfer in epitaxy level packaging
|
JP2013143407A
(ja)
|
2012-01-06 |
2013-07-22 |
Shin Etsu Handotai Co Ltd |
貼り合わせsoiウェーハの製造方法
|
EP2618385A1
(de)
|
2012-01-20 |
2013-07-24 |
AZUR SPACE Solar Power GmbH |
Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle
|
JP5673572B2
(ja)
|
2012-01-24 |
2015-02-18 |
信越半導体株式会社 |
貼り合わせsoiウェーハの製造方法
|
US8871608B2
(en)
|
2012-02-08 |
2014-10-28 |
Gtat Corporation |
Method for fabricating backside-illuminated sensors
|
SG11201404576TA
(en)
|
2012-02-22 |
2014-10-30 |
Soitec Silicon On Insulator |
Methods of providing thin layers of crystalline semiconductor material, and related structures and devices
|
US9136134B2
(en)
|
2012-02-22 |
2015-09-15 |
Soitec |
Methods of providing thin layers of crystalline semiconductor material, and related structures and devices
|
US8916483B2
(en)
|
2012-03-09 |
2014-12-23 |
Soitec |
Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum
|
WO2013132332A1
(en)
|
2012-03-09 |
2013-09-12 |
Soitec |
Methods for forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods
|
US9000557B2
(en)
|
2012-03-17 |
2015-04-07 |
Zvi Or-Bach |
Semiconductor device and structure
|
US8933715B2
(en)
|
2012-04-08 |
2015-01-13 |
Elm Technology Corporation |
Configurable vertical integration
|
US11164811B2
(en)
|
2012-04-09 |
2021-11-02 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers and oxide-to-oxide bonding
|
US11881443B2
(en)
|
2012-04-09 |
2024-01-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11694944B1
(en)
|
2012-04-09 |
2023-07-04 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11616004B1
(en)
|
2012-04-09 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US10600888B2
(en)
|
2012-04-09 |
2020-03-24 |
Monolithic 3D Inc. |
3D semiconductor device
|
US11735501B1
(en)
|
2012-04-09 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11594473B2
(en)
|
2012-04-09 |
2023-02-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US8557632B1
(en)
|
2012-04-09 |
2013-10-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US11476181B1
(en)
|
2012-04-09 |
2022-10-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11088050B2
(en)
|
2012-04-09 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers
|
US11410912B2
(en)
|
2012-04-09 |
2022-08-09 |
Monolithic 3D Inc. |
3D semiconductor device with vias and isolation layers
|
US9257339B2
(en)
|
2012-05-04 |
2016-02-09 |
Silicon Genesis Corporation |
Techniques for forming optoelectronic devices
|
JP2013247362A
(ja)
*
|
2012-05-29 |
2013-12-09 |
Samsung Corning Precision Materials Co Ltd |
半導体素子用薄膜貼り合わせ基板の製造方法
|
FR2991499A1
(fr)
|
2012-05-31 |
2013-12-06 |
Commissariat Energie Atomique |
Procede et systeme d'obtention d'une tranche semi-conductrice
|
FR2991498A1
(fr)
|
2012-05-31 |
2013-12-06 |
Commissariat Energie Atomique |
Procede et systeme d'obtention d'une tranche semi-conductrice
|
US9245836B2
(en)
|
2012-06-28 |
2016-01-26 |
Soitec |
Interposers including fluidic microchannels and related structures and methods
|
WO2014020389A1
(en)
|
2012-07-31 |
2014-02-06 |
Soitec |
Methods of forming semiconductor structures including a conductive interconnection, and related structures
|
WO2014020388A1
(en)
|
2012-07-31 |
2014-02-06 |
Soitec |
Methods of forming semiconductor structures including mems devices and integrated circuits on common sides of substrates, and related structures and devices
|
CN104507853B
(zh)
|
2012-07-31 |
2016-11-23 |
索泰克公司 |
形成半导体设备的方法
|
CN104508815B
(zh)
|
2012-07-31 |
2018-02-13 |
索泰克公司 |
使用激光剥离过程制造半导体结构的方法和相关的半导体结构
|
WO2014030040A1
(en)
|
2012-08-24 |
2014-02-27 |
Soitec |
Methods of forming semiconductor structures and devices including graphene, and related structures and devices
|
TWI588955B
(zh)
|
2012-09-24 |
2017-06-21 |
索泰克公司 |
使用多重底材形成iii-v族半導體結構之方法及應用此等方法所製作之半導體元件
|
US8686428B1
(en)
|
2012-11-16 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8574929B1
(en)
|
2012-11-16 |
2013-11-05 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US9129919B2
(en)
|
2012-11-19 |
2015-09-08 |
Sunedison Semiconductor Limited |
Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei
|
US11063024B1
(en)
|
2012-12-22 |
2021-07-13 |
Monlithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11217565B2
(en)
|
2012-12-22 |
2022-01-04 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11916045B2
(en)
|
2012-12-22 |
2024-02-27 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US8674470B1
(en)
|
2012-12-22 |
2014-03-18 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11309292B2
(en)
|
2012-12-22 |
2022-04-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11018116B2
(en)
|
2012-12-22 |
2021-05-25 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11961827B1
(en)
|
2012-12-22 |
2024-04-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11967583B2
(en)
|
2012-12-22 |
2024-04-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11784169B2
(en)
|
2012-12-22 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11087995B1
(en)
|
2012-12-29 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11177140B2
(en)
|
2012-12-29 |
2021-11-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11430667B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11004694B1
(en)
|
2012-12-29 |
2021-05-11 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10115663B2
(en)
|
2012-12-29 |
2018-10-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10903089B1
(en)
|
2012-12-29 |
2021-01-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10892169B2
(en)
|
2012-12-29 |
2021-01-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9385058B1
(en)
|
2012-12-29 |
2016-07-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11430668B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US10651054B2
(en)
|
2012-12-29 |
2020-05-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9871034B1
(en)
|
2012-12-29 |
2018-01-16 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10600657B2
(en)
|
2012-12-29 |
2020-03-24 |
Monolithic 3D Inc |
3D semiconductor device and structure
|
US9224474B2
(en)
|
2013-01-09 |
2015-12-29 |
Macronix International Co., Ltd. |
P-channel 3D memory array and methods to program and erase the same at bit level and block level utilizing band-to-band and fowler-nordheim tunneling principals
|
JP2016511934A
(ja)
|
2013-01-16 |
2016-04-21 |
キューマット インコーポレイテッドQmat, Inc. |
光電子デバイスを形成する技術
|
US9171636B2
(en)
|
2013-01-29 |
2015-10-27 |
Macronix International Co. Ltd. |
Hot carrier generation and programming in NAND flash
|
JP6056516B2
(ja)
|
2013-02-01 |
2017-01-11 |
信越半導体株式会社 |
Soiウェーハの製造方法及びsoiウェーハ
|
TWI602315B
(zh)
|
2013-03-08 |
2017-10-11 |
索泰克公司 |
具有經組構成效能更佳之低帶隙主動層之感光元件及相關方法
|
US8902663B1
(en)
|
2013-03-11 |
2014-12-02 |
Monolithic 3D Inc. |
Method of maintaining a memory state
|
US11869965B2
(en)
|
2013-03-11 |
2024-01-09 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US10325651B2
(en)
|
2013-03-11 |
2019-06-18 |
Monolithic 3D Inc. |
3D semiconductor device with stacked memory
|
US11935949B1
(en)
|
2013-03-11 |
2024-03-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US11923374B2
(en)
|
2013-03-12 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11398569B2
(en)
|
2013-03-12 |
2022-07-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8994404B1
(en)
|
2013-03-12 |
2015-03-31 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11088130B2
(en)
|
2014-01-28 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9214351B2
(en)
|
2013-03-12 |
2015-12-15 |
Macronix International Co., Ltd. |
Memory architecture of thin film 3D array
|
US10840239B2
(en)
|
2014-08-26 |
2020-11-17 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
FR3003397B1
(fr)
|
2013-03-15 |
2016-07-22 |
Soitec Silicon On Insulator |
Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
|
US9343626B2
(en)
|
2013-03-15 |
2016-05-17 |
Soitec |
Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
|
US9117749B1
(en)
|
2013-03-15 |
2015-08-25 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
TWI593135B
(zh)
|
2013-03-15 |
2017-07-21 |
索泰克公司 |
具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件
|
US10224279B2
(en)
|
2013-03-15 |
2019-03-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11030371B2
(en)
|
2013-04-15 |
2021-06-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11487928B2
(en)
|
2013-04-15 |
2022-11-01 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11341309B1
(en)
|
2013-04-15 |
2022-05-24 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US9021414B1
(en)
|
2013-04-15 |
2015-04-28 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11270055B1
(en)
|
2013-04-15 |
2022-03-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11720736B2
(en)
|
2013-04-15 |
2023-08-08 |
Monolithic 3D Inc. |
Automation methods for 3D integrated circuits and devices
|
US11574109B1
(en)
|
2013-04-15 |
2023-02-07 |
Monolithic 3D Inc |
Automation methods for 3D integrated circuits and devices
|
JP6086031B2
(ja)
|
2013-05-29 |
2017-03-01 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
JP5888286B2
(ja)
|
2013-06-26 |
2016-03-16 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
US10703627B2
(en)
|
2013-06-27 |
2020-07-07 |
Soitec |
Methods of fabricating semiconductor structures including cavities filled with a sacrificial material
|
JP6061251B2
(ja)
*
|
2013-07-05 |
2017-01-18 |
株式会社豊田自動織機 |
半導体基板の製造方法
|
WO2015009669A1
(en)
|
2013-07-16 |
2015-01-22 |
The Government Of The United States Of America, As Represented By The Secretary Of The Navy |
Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
|
US9859112B2
(en)
*
|
2013-07-18 |
2018-01-02 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Bonded semiconductor structures
|
JP2015032690A
(ja)
|
2013-08-02 |
2015-02-16 |
株式会社ディスコ |
積層ウェーハの加工方法
|
US9064789B2
(en)
*
|
2013-08-12 |
2015-06-23 |
International Business Machines Corporation |
Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
|
JP6213046B2
(ja)
|
2013-08-21 |
2017-10-18 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
JP6136786B2
(ja)
|
2013-09-05 |
2017-05-31 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
US9154138B2
(en)
|
2013-10-11 |
2015-10-06 |
Palo Alto Research Center Incorporated |
Stressed substrates for transient electronic systems
|
JP6200273B2
(ja)
|
2013-10-17 |
2017-09-20 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
US9716176B2
(en)
|
2013-11-26 |
2017-07-25 |
Samsung Electronics Co., Ltd. |
FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
|
CN104752311B
(zh)
*
|
2013-12-27 |
2018-02-06 |
中芯国际集成电路制造(上海)有限公司 |
一种绝缘体上硅衬底及其制造方法
|
JP6090184B2
(ja)
|
2014-01-27 |
2017-03-08 |
信越半導体株式会社 |
半導体ウェーハの洗浄槽及び貼り合わせウェーハの製造方法
|
US11107808B1
(en)
|
2014-01-28 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11031394B1
(en)
|
2014-01-28 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10297586B2
(en)
|
2015-03-09 |
2019-05-21 |
Monolithic 3D Inc. |
Methods for processing a 3D semiconductor device
|
WO2015119742A1
(en)
*
|
2014-02-07 |
2015-08-13 |
Sunedison Semiconductor Limited |
Methods for preparing layered semiconductor structures
|
JP6107709B2
(ja)
|
2014-03-10 |
2017-04-05 |
信越半導体株式会社 |
貼り合わせsoiウェーハの製造方法
|
JP6036732B2
(ja)
|
2014-03-18 |
2016-11-30 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
TWI559371B
(zh)
*
|
2014-04-09 |
2016-11-21 |
東京威力科創股份有限公司 |
來自疊對之晶圓彎曲的修正方法
|
US9256123B2
(en)
|
2014-04-23 |
2016-02-09 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of making an extreme ultraviolet pellicle
|
US9559113B2
(en)
|
2014-05-01 |
2017-01-31 |
Macronix International Co., Ltd. |
SSL/GSL gate oxide in 3D vertical channel NAND
|
JP6094541B2
(ja)
|
2014-07-28 |
2017-03-15 |
信越半導体株式会社 |
ゲルマニウムウェーハの研磨方法
|
US9165945B1
(en)
|
2014-09-18 |
2015-10-20 |
Soitec |
Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures
|
US9219150B1
(en)
|
2014-09-18 |
2015-12-22 |
Soitec |
Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structures
|
US9209301B1
(en)
|
2014-09-18 |
2015-12-08 |
Soitec |
Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
|
JP2017530563A
(ja)
*
|
2014-09-22 |
2017-10-12 |
コンソルツィオ デルタ ティ リサーチ |
シリコン集積面外熱流束熱電発電機
|
JP6210043B2
(ja)
|
2014-09-26 |
2017-10-11 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
JP6859257B2
(ja)
|
2014-10-09 |
2021-04-14 |
コンソルツィオ デルタ ティ リサーチ |
内部ボイド及び熱伝導経路調整ビアを備える面外熱流束構成で動作する3d集積化熱電発電機
|
WO2016081313A1
(en)
*
|
2014-11-18 |
2016-05-26 |
Sunedison Semiconductor Limited |
A method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers
|
KR102587022B1
(ko)
|
2014-11-27 |
2023-10-10 |
실텍트라 게엠베하 |
재료의 전환을 이용한 고체의 분할
|
FR3029538B1
(fr)
*
|
2014-12-04 |
2019-04-26 |
Soitec |
Procede de transfert de couche
|
DE102014118017A1
(de)
|
2014-12-05 |
2016-06-09 |
Ev Group E. Thallner Gmbh |
Substratstapelhalterung, Container und Verfahren zur Trennung eines Substratstapels
|
US9656859B2
(en)
|
2015-04-16 |
2017-05-23 |
The United States Of America, As Represented By The Secretary Of The Navy |
Method for fabricating suspended MEMS structures
|
US11056468B1
(en)
|
2015-04-19 |
2021-07-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10825779B2
(en)
|
2015-04-19 |
2020-11-03 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11011507B1
(en)
|
2015-04-19 |
2021-05-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10381328B2
(en)
|
2015-04-19 |
2019-08-13 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9780044B2
(en)
|
2015-04-23 |
2017-10-03 |
Palo Alto Research Center Incorporated |
Transient electronic device with ion-exchanged glass treated interposer
|
FR3036845B1
(fr)
|
2015-05-28 |
2017-05-26 |
Soitec Silicon On Insulator |
Procede de transfert d'une couche d'un substrat monocristallin
|
JP6396854B2
(ja)
|
2015-06-02 |
2018-09-26 |
信越化学工業株式会社 |
酸化物単結晶薄膜を備えた複合ウェーハの製造方法
|
JP6396853B2
(ja)
|
2015-06-02 |
2018-09-26 |
信越化学工業株式会社 |
酸化物単結晶薄膜を備えた複合ウェーハの製造方法
|
JP6396852B2
(ja)
|
2015-06-02 |
2018-09-26 |
信越化学工業株式会社 |
酸化物単結晶薄膜を備えた複合ウェーハの製造方法
|
JP6454606B2
(ja)
|
2015-06-02 |
2019-01-16 |
信越化学工業株式会社 |
酸化物単結晶薄膜を備えた複合ウェーハの製造方法
|
JP6380245B2
(ja)
|
2015-06-15 |
2018-08-29 |
信越半導体株式会社 |
Soiウェーハの製造方法
|
US9577047B2
(en)
|
2015-07-10 |
2017-02-21 |
Palo Alto Research Center Incorporated |
Integration of semiconductor epilayers on non-native substrates
|
US11956952B2
(en)
|
2015-08-23 |
2024-04-09 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
CN106548972B
(zh)
|
2015-09-18 |
2019-02-26 |
胡兵 |
一种将半导体衬底主体与其上功能层进行分离的方法
|
FR3041364B1
(fr)
|
2015-09-18 |
2017-10-06 |
Soitec Silicon On Insulator |
Procede de transfert de paves monocristallins
|
WO2017053329A1
(en)
|
2015-09-21 |
2017-03-30 |
Monolithic 3D Inc |
3d semiconductor device and structure
|
US10522225B1
(en)
|
2015-10-02 |
2019-12-31 |
Monolithic 3D Inc. |
Semiconductor device with non-volatile memory
|
US9666615B2
(en)
|
2015-10-20 |
2017-05-30 |
International Business Machines Corporation |
Semiconductor on insulator substrate with back bias
|
DE102015117821B4
(de)
|
2015-10-20 |
2021-09-09 |
Infineon Technologies Ag |
Verfahren zum Bilden eines Halbleiterbauelements
|
US10418369B2
(en)
|
2015-10-24 |
2019-09-17 |
Monolithic 3D Inc. |
Multi-level semiconductor memory device and structure
|
US10847540B2
(en)
|
2015-10-24 |
2020-11-24 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11296115B1
(en)
|
2015-10-24 |
2022-04-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11114464B2
(en)
|
2015-10-24 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11114427B2
(en)
|
2015-11-07 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor processor and memory device and structure
|
US11937422B2
(en)
|
2015-11-07 |
2024-03-19 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US9795964B2
(en)
|
2015-11-20 |
2017-10-24 |
International Business Machines Corporation |
Direct bond transfer layers for manufacturable sealing of microfluidic chips
|
WO2017112663A1
(en)
|
2015-12-21 |
2017-06-29 |
University Of Central Florida Research Foundation, Inc. |
Optical waveguide, fabrication methods, and applications
|
DE102016200494A1
(de)
|
2016-01-15 |
2017-07-20 |
Robert Bosch Gmbh |
Verfahren zum Herstellen eines mehrschichtigen MEMS-Bauelements und entsprechendes mehrschichtiges MEMS-Bauelement
|
JP6513041B2
(ja)
|
2016-02-19 |
2019-05-15 |
信越半導体株式会社 |
半導体ウェーハの熱処理方法
|
CN107154379B
(zh)
|
2016-03-03 |
2020-01-24 |
上海新昇半导体科技有限公司 |
绝缘层上顶层硅衬底及其制造方法
|
CN107154347B
(zh)
|
2016-03-03 |
2020-11-20 |
上海新昇半导体科技有限公司 |
绝缘层上顶层硅衬底及其制造方法
|
CN107154378B
(zh)
|
2016-03-03 |
2020-11-20 |
上海新昇半导体科技有限公司 |
绝缘层上顶层硅衬底及其制造方法
|
JP6563360B2
(ja)
|
2016-04-05 |
2019-08-21 |
信越化学工業株式会社 |
酸化物単結晶薄膜を備えた複合ウェーハの製造方法
|
US10012250B2
(en)
|
2016-04-06 |
2018-07-03 |
Palo Alto Research Center Incorporated |
Stress-engineered frangible structures
|
SG11201809883QA
(en)
|
2016-05-10 |
2018-12-28 |
Agency Science Tech & Res |
Fan-out wafer-level packaging method and the package produced thereof
|
JP6500845B2
(ja)
*
|
2016-06-14 |
2019-04-17 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
CN108292605B
(zh)
|
2016-06-24 |
2021-08-27 |
富士电机株式会社 |
半导体装置的制造方法和半导体装置
|
US10224297B2
(en)
|
2016-07-26 |
2019-03-05 |
Palo Alto Research Center Incorporated |
Sensor and heater for stimulus-initiated fracture of a substrate
|
US10026579B2
(en)
|
2016-07-26 |
2018-07-17 |
Palo Alto Research Center Incorporated |
Self-limiting electrical triggering for initiating fracture of frangible glass
|
DE102016117921A1
(de)
|
2016-09-22 |
2018-03-22 |
Infineon Technologies Ag |
Verfahren zum Spalten von Halbleiterbauelementen und Halbleiterbauelement
|
US11329059B1
(en)
|
2016-10-10 |
2022-05-10 |
Monolithic 3D Inc. |
3D memory devices and structures with thinned single crystal substrates
|
US11930648B1
(en)
|
2016-10-10 |
2024-03-12 |
Monolithic 3D Inc. |
3D memory devices and structures with metal layers
|
US11812620B2
(en)
|
2016-10-10 |
2023-11-07 |
Monolithic 3D Inc. |
3D DRAM memory devices and structures with control circuits
|
US11251149B2
(en)
|
2016-10-10 |
2022-02-15 |
Monolithic 3D Inc. |
3D memory device and structure
|
US11711928B2
(en)
|
2016-10-10 |
2023-07-25 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
US11869591B2
(en)
|
2016-10-10 |
2024-01-09 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
US10903173B2
(en)
|
2016-10-20 |
2021-01-26 |
Palo Alto Research Center Incorporated |
Pre-conditioned substrate
|
JP7110204B2
(ja)
|
2016-12-28 |
2022-08-01 |
サンエディソン・セミコンダクター・リミテッド |
イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法
|
KR101866348B1
(ko)
*
|
2016-12-28 |
2018-06-12 |
한국에너지기술연구원 |
수소 헬륨 공동 주입을 통한 박형 실리콘 기판 제조 방법
|
US10559594B2
(en)
|
2017-04-11 |
2020-02-11 |
Ahmad Tarakji |
Approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistors
|
JP6686962B2
(ja)
*
|
2017-04-25 |
2020-04-22 |
信越半導体株式会社 |
貼り合わせウェーハの製造方法
|
US10026651B1
(en)
|
2017-06-21 |
2018-07-17 |
Palo Alto Research Center Incorporated |
Singulation of ion-exchanged substrates
|
WO2019087157A1
(en)
|
2017-11-03 |
2019-05-09 |
Ecole Polytechnique Federale De Lausanne (Epfl) |
Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation
|
US10626048B2
(en)
|
2017-12-18 |
2020-04-21 |
Palo Alto Research Center Incorporated |
Dissolvable sealant for masking glass in high temperature ion exchange baths
|
DE102018000748A1
(de)
|
2018-01-31 |
2019-08-01 |
Azur Space Solar Power Gmbh |
Herstellung einer dünnen Substartschicht
|
US10461495B2
(en)
|
2018-03-02 |
2019-10-29 |
Cisco Technology, Inc. |
Substrate technology for quantum dot lasers integrated on silicon
|
US10734788B2
(en)
|
2018-03-02 |
2020-08-04 |
Cisco Technology, Inc. |
Quantum dot lasers integrated on silicon submount with mechanical features and through-silicon vias
|
US10734785B2
(en)
|
2018-03-02 |
2020-08-04 |
Cisco Technology, Inc. |
Silicon photonics co-integrated with quantum dot lasers on silicon
|
EP3759771A1
(de)
|
2018-03-02 |
2021-01-06 |
Cisco Technology, Inc. |
Auf einem silicium-subträger integrierte quantenpunktlaser mit mechanischen merkmalen und siliciumdurchkontaktierungen
|
FR3079658B1
(fr)
*
|
2018-03-28 |
2021-12-17 |
Soitec Silicon On Insulator |
Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques
|
US10964664B2
(en)
|
2018-04-20 |
2021-03-30 |
Invensas Bonding Technologies, Inc. |
DBI to Si bonding for simplified handle wafer
|
US10381362B1
(en)
|
2018-05-15 |
2019-08-13 |
Sandisk Technologies Llc |
Three-dimensional memory device including inverted memory stack structures and methods of making the same
|
US10717669B2
(en)
|
2018-05-16 |
2020-07-21 |
Palo Alto Research Center Incorporated |
Apparatus and method for creating crack initiation sites in a self-fracturing frangible member
|
CN110797297A
(zh)
*
|
2018-08-03 |
2020-02-14 |
沈阳硅基科技有限公司 |
使用自控层分离方式制备绝缘层上的硅结构的方法
|
US11355358B2
(en)
|
2018-09-24 |
2022-06-07 |
Applied Materials, Inc. |
Methods of thinning silicon on epoxy mold compound for radio frequency (RF) applications
|
US11107645B2
(en)
|
2018-11-29 |
2021-08-31 |
Palo Alto Research Center Incorporated |
Functionality change based on stress-engineered components
|
US10947150B2
(en)
|
2018-12-03 |
2021-03-16 |
Palo Alto Research Center Incorporated |
Decoy security based on stress-engineered substrates
|
CN109768050B
(zh)
*
|
2018-12-18 |
2020-11-17 |
长江存储科技有限责任公司 |
三维存储器及其制备方法
|
US11414782B2
(en)
|
2019-01-13 |
2022-08-16 |
Bing Hu |
Method of separating a film from a main body of a crystalline object
|
US10879260B2
(en)
|
2019-02-28 |
2020-12-29 |
Sandisk Technologies Llc |
Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same
|
US11763864B2
(en)
|
2019-04-08 |
2023-09-19 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures with bit-line pillars
|
US10892016B1
(en)
|
2019-04-08 |
2021-01-12 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11296106B2
(en)
|
2019-04-08 |
2022-04-05 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11018156B2
(en)
|
2019-04-08 |
2021-05-25 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11158652B1
(en)
|
2019-04-08 |
2021-10-26 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US10969205B2
(en)
|
2019-05-03 |
2021-04-06 |
Palo Alto Research Center Incorporated |
Electrically-activated pressure vessels for fracturing frangible structures
|
US11527376B2
(en)
|
2019-07-25 |
2022-12-13 |
Kionix, Inc. |
Micro-electromechanical system devices and methods
|
FR3100081B1
(fr)
|
2019-08-21 |
2021-09-10 |
Commissariat Energie Atomique |
Procédé de scellement de cavités par des membranes
|
DE102019122614A1
(de)
*
|
2019-08-22 |
2021-02-25 |
Infineon Technologies Ag |
Ausgangssubstrat, wafer-verbund und verfahren zum herstellen von kristallinen substraten und halbleitervorrichtungen
|
CN110634861B
(zh)
*
|
2019-09-11 |
2021-10-29 |
西安电子科技大学 |
基于智能剥离技术的单片异质集成Cascode氮化镓高迁移率晶体管及制作方法
|
US10910272B1
(en)
|
2019-10-22 |
2021-02-02 |
Sandisk Technologies Llc |
Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same
|
US11271079B2
(en)
|
2020-01-15 |
2022-03-08 |
Globalfoundries U.S. Inc. |
Wafer with crystalline silicon and trap rich polysilicon layer
|
US11296190B2
(en)
|
2020-01-15 |
2022-04-05 |
Globalfoundries U.S. Inc. |
Field effect transistors with back gate contact and buried high resistivity layer
|
FR3106932B1
(fr)
|
2020-02-04 |
2023-10-27 |
Commissariat Energie Atomique |
Procede de fabrication d’un substrat structure
|
JP7262421B2
(ja)
*
|
2020-05-08 |
2023-04-21 |
信越化学工業株式会社 |
圧電体複合基板およびその製造方法
|
CN112582332A
(zh)
*
|
2020-12-08 |
2021-03-30 |
上海新昇半导体科技有限公司 |
一种绝缘体上硅结构及其方法
|
US11904986B2
(en)
|
2020-12-21 |
2024-02-20 |
Xerox Corporation |
Mechanical triggers and triggering methods for self-destructing frangible structures and sealed vessels
|
FR3121281B1
(fr)
*
|
2021-03-23 |
2023-11-24 |
Soitec Silicon On Insulator |
Procede de fabrication d’une structure composite comprenant une couche mince en semi-conducteur monocristallin sur un substrat support
|
CN116387241A
(zh)
*
|
2023-04-21 |
2023-07-04 |
中芯先锋集成电路制造(绍兴)有限公司 |
绝缘体上半导体衬底的制造方法及半导体器件的制造方法
|