DE69232367D1 - Röntgenapparat zur Projektionslithographie - Google Patents

Röntgenapparat zur Projektionslithographie

Info

Publication number
DE69232367D1
DE69232367D1 DE69232367T DE69232367T DE69232367D1 DE 69232367 D1 DE69232367 D1 DE 69232367D1 DE 69232367 T DE69232367 T DE 69232367T DE 69232367 T DE69232367 T DE 69232367T DE 69232367 D1 DE69232367 D1 DE 69232367D1
Authority
DE
Germany
Prior art keywords
ray apparatus
projection lithography
lithography
projection
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232367T
Other languages
English (en)
Other versions
DE69232367T2 (de
Inventor
Kozo Mochiji
Hiroaki Oizumi
Shigeo Moriyama
Shinji Okazaki
Tsuneo Terasawa
Masaaki Itou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69232367D1 publication Critical patent/DE69232367D1/de
Application granted granted Critical
Publication of DE69232367T2 publication Critical patent/DE69232367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841Constructional issues related to vacuum environment, e.g. load-lock chamber
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933Purge, e.g. exchanging fluid or gas to remove pollutants
DE69232367T 1991-09-19 1992-08-31 Röntgenapparat zur Projektionslithographie Expired - Fee Related DE69232367T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03239244A JP3127511B2 (ja) 1991-09-19 1991-09-19 露光装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69232367D1 true DE69232367D1 (de) 2002-03-14
DE69232367T2 DE69232367T2 (de) 2002-08-14

Family

ID=17041885

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232367T Expired - Fee Related DE69232367T2 (de) 1991-09-19 1992-08-31 Röntgenapparat zur Projektionslithographie

Country Status (4)

Country Link
US (1) US5305364A (de)
EP (1) EP0532968B1 (de)
JP (1) JP3127511B2 (de)
DE (1) DE69232367T2 (de)

Families Citing this family (42)

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Publication number Priority date Publication date Assignee Title
JP3255849B2 (ja) * 1996-07-19 2002-02-12 キヤノン株式会社 露光装置
US5973764A (en) * 1997-06-19 1999-10-26 Svg Lithography Systems, Inc. Vacuum assisted debris removal system
US6167111A (en) * 1997-07-02 2000-12-26 Canon Kabushiki Kaisha Exposure apparatus for synchrotron radiation lithography
US6459472B1 (en) 1998-05-15 2002-10-01 Asml Netherlands B.V. Lithographic device
EP0957402B1 (de) * 1998-05-15 2006-09-20 ASML Netherlands B.V. Lithographische Vorrichtung
JP2000082666A (ja) * 1998-07-09 2000-03-21 Canon Inc X線マスク構造体、x線露光装置、該x線露光装置を用いたx線露光方法、x線マスク構造体または該x線露光装置を用いて作製された半導体デバイス及び該半導体デバイスの製造方法
US6198792B1 (en) * 1998-11-06 2001-03-06 Euv Llc Wafer chamber having a gas curtain for extreme-UV lithography
US6970228B1 (en) * 1999-07-16 2005-11-29 Nikon Corporation Exposure method and system
FR2802311B1 (fr) * 1999-12-08 2002-01-18 Commissariat Energie Atomique Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
US6369874B1 (en) * 2000-04-18 2002-04-09 Silicon Valley Group, Inc. Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography
KR100833275B1 (ko) 2000-05-03 2008-05-28 에이에스엠엘 유에스, 인크. 정화 가스를 이용한 비접촉식 시일
US6630984B2 (en) 2000-08-03 2003-10-07 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1178357A1 (de) * 2000-08-03 2002-02-06 Asm Lithography B.V. Lithographischer Apparat
DE10050810A1 (de) * 2000-10-13 2002-04-18 Philips Corp Intellectual Pty Verfahren zur Herstellung eines elektronenstrahltransparenten Fensters sowie elektronenstrahltransparentes Fenster
DE10050811A1 (de) * 2000-10-13 2002-04-18 Philips Corp Intellectual Pty Elektronenstrahltransparentes Fenster
JP2002151400A (ja) * 2000-11-15 2002-05-24 Canon Inc 露光装置、その保守方法並びに同装置を用いた半導体デバイス製造方法及び半導体製造工場
US6614505B2 (en) 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
CN1256628C (zh) * 2001-04-17 2006-05-17 皇家菲利浦电子有限公司 远紫外线可透过的界面结构
EP1256847B1 (de) * 2001-05-09 2007-07-25 ASML Netherlands B.V. Lithographischer Apparat mit Spülgassystem
EP1256844A1 (de) * 2001-05-09 2002-11-13 ASML Netherlands B.V. Lithographischer Apparat
EP1438637A2 (de) * 2001-10-12 2004-07-21 Koninklijke Philips Electronics N.V. Lithographievorrichtung und bauelementeherstellungsverfahren
DE10239344A1 (de) 2002-08-28 2004-03-11 Carl Zeiss Smt Ag Vorrichtung zum Abdichten einer Projektionsbelichtungsanlage
JP4235480B2 (ja) 2002-09-03 2009-03-11 キヤノン株式会社 差動排気システム及び露光装置
JP3703447B2 (ja) 2002-09-06 2005-10-05 キヤノン株式会社 差動排気システム及び露光装置
US7093568B2 (en) * 2003-01-13 2006-08-22 Ford Global Technologies, Llc Control of autoignition timing in a HCCI engine
EP1491955A1 (de) 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US6977713B2 (en) * 2003-12-08 2005-12-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8094288B2 (en) 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7361911B2 (en) 2004-12-09 2008-04-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070085984A1 (en) * 2005-10-18 2007-04-19 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
TWI330762B (en) 2005-03-29 2010-09-21 Asml Netherlands Bv Seal of a lithographic apparatus, lithographic apparatus, device manufacturing method and data storage medium
US7502095B2 (en) * 2005-03-29 2009-03-10 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
DE102006044591A1 (de) * 2006-09-19 2008-04-03 Carl Zeiss Smt Ag Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination
DE102008000957A1 (de) * 2008-04-03 2009-10-08 Carl Zeiss Smt Ag Schutzmodul sowie EUV-Lithographievorrichtung mit Schutzmodul
NL1036957A1 (nl) 2008-06-13 2009-12-15 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5495547B2 (ja) * 2008-12-25 2014-05-21 キヤノン株式会社 処理装置、およびデバイス製造方法
DE102009016319A1 (de) * 2009-04-06 2010-10-14 Carl Zeiss Smt Ag Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage
FI20105626A0 (fi) * 2010-06-03 2010-06-03 Hs Foils Oy Erittäin ohut berylliumikkuna ja menetelmä sen valmistamiseksi
KR101846336B1 (ko) * 2010-06-25 2018-04-06 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 방법
JP5839672B2 (ja) * 2011-09-28 2016-01-06 株式会社日立製作所 低真空軟x線実験装置
JP6280116B2 (ja) * 2012-08-03 2018-02-14 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置および方法
NL2023213A (en) * 2018-07-05 2020-01-09 Asml Netherlands Bv A lithographic apparatus and cooling apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539695A (en) * 1984-01-06 1985-09-03 The Perkin-Elmer Corporation X-Ray lithography system
JPS61104620A (ja) * 1984-10-29 1986-05-22 Fujitsu Ltd X線露光装置
DE3752314T2 (de) * 1986-07-11 2000-09-14 Canon Kk Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung
US4862490A (en) * 1986-10-23 1989-08-29 Hewlett-Packard Company Vacuum windows for soft x-ray machines
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
US5063586A (en) * 1989-10-13 1991-11-05 At&T Bell Laboratories Apparatus for semiconductor lithography
JP3026284B2 (ja) * 1990-09-18 2000-03-27 住友電気工業株式会社 X線窓材とその製造方法

Also Published As

Publication number Publication date
EP0532968A1 (de) 1993-03-24
JPH0582417A (ja) 1993-04-02
US5305364A (en) 1994-04-19
EP0532968B1 (de) 2002-01-23
DE69232367T2 (de) 2002-08-14
JP3127511B2 (ja) 2001-01-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee