DE69232367D1 - Röntgenapparat zur Projektionslithographie - Google Patents
Röntgenapparat zur ProjektionslithographieInfo
- Publication number
- DE69232367D1 DE69232367D1 DE69232367T DE69232367T DE69232367D1 DE 69232367 D1 DE69232367 D1 DE 69232367D1 DE 69232367 T DE69232367 T DE 69232367T DE 69232367 T DE69232367 T DE 69232367T DE 69232367 D1 DE69232367 D1 DE 69232367D1
- Authority
- DE
- Germany
- Prior art keywords
- ray apparatus
- projection lithography
- lithography
- projection
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03239244A JP3127511B2 (ja) | 1991-09-19 | 1991-09-19 | 露光装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69232367D1 true DE69232367D1 (de) | 2002-03-14 |
DE69232367T2 DE69232367T2 (de) | 2002-08-14 |
Family
ID=17041885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69232367T Expired - Fee Related DE69232367T2 (de) | 1991-09-19 | 1992-08-31 | Röntgenapparat zur Projektionslithographie |
Country Status (4)
Country | Link |
---|---|
US (1) | US5305364A (de) |
EP (1) | EP0532968B1 (de) |
JP (1) | JP3127511B2 (de) |
DE (1) | DE69232367T2 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3255849B2 (ja) * | 1996-07-19 | 2002-02-12 | キヤノン株式会社 | 露光装置 |
US5973764A (en) * | 1997-06-19 | 1999-10-26 | Svg Lithography Systems, Inc. | Vacuum assisted debris removal system |
US6167111A (en) * | 1997-07-02 | 2000-12-26 | Canon Kabushiki Kaisha | Exposure apparatus for synchrotron radiation lithography |
US6459472B1 (en) | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
EP0957402B1 (de) * | 1998-05-15 | 2006-09-20 | ASML Netherlands B.V. | Lithographische Vorrichtung |
JP2000082666A (ja) * | 1998-07-09 | 2000-03-21 | Canon Inc | X線マスク構造体、x線露光装置、該x線露光装置を用いたx線露光方法、x線マスク構造体または該x線露光装置を用いて作製された半導体デバイス及び該半導体デバイスの製造方法 |
US6198792B1 (en) * | 1998-11-06 | 2001-03-06 | Euv Llc | Wafer chamber having a gas curtain for extreme-UV lithography |
US6970228B1 (en) * | 1999-07-16 | 2005-11-29 | Nikon Corporation | Exposure method and system |
FR2802311B1 (fr) * | 1999-12-08 | 2002-01-18 | Commissariat Energie Atomique | Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine |
US6369874B1 (en) * | 2000-04-18 | 2002-04-09 | Silicon Valley Group, Inc. | Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography |
KR100833275B1 (ko) | 2000-05-03 | 2008-05-28 | 에이에스엠엘 유에스, 인크. | 정화 가스를 이용한 비접촉식 시일 |
US6630984B2 (en) | 2000-08-03 | 2003-10-07 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
EP1178357A1 (de) * | 2000-08-03 | 2002-02-06 | Asm Lithography B.V. | Lithographischer Apparat |
DE10050810A1 (de) * | 2000-10-13 | 2002-04-18 | Philips Corp Intellectual Pty | Verfahren zur Herstellung eines elektronenstrahltransparenten Fensters sowie elektronenstrahltransparentes Fenster |
DE10050811A1 (de) * | 2000-10-13 | 2002-04-18 | Philips Corp Intellectual Pty | Elektronenstrahltransparentes Fenster |
JP2002151400A (ja) * | 2000-11-15 | 2002-05-24 | Canon Inc | 露光装置、その保守方法並びに同装置を用いた半導体デバイス製造方法及び半導体製造工場 |
US6614505B2 (en) | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
CN1256628C (zh) * | 2001-04-17 | 2006-05-17 | 皇家菲利浦电子有限公司 | 远紫外线可透过的界面结构 |
EP1256847B1 (de) * | 2001-05-09 | 2007-07-25 | ASML Netherlands B.V. | Lithographischer Apparat mit Spülgassystem |
EP1256844A1 (de) * | 2001-05-09 | 2002-11-13 | ASML Netherlands B.V. | Lithographischer Apparat |
EP1438637A2 (de) * | 2001-10-12 | 2004-07-21 | Koninklijke Philips Electronics N.V. | Lithographievorrichtung und bauelementeherstellungsverfahren |
DE10239344A1 (de) | 2002-08-28 | 2004-03-11 | Carl Zeiss Smt Ag | Vorrichtung zum Abdichten einer Projektionsbelichtungsanlage |
JP4235480B2 (ja) | 2002-09-03 | 2009-03-11 | キヤノン株式会社 | 差動排気システム及び露光装置 |
JP3703447B2 (ja) | 2002-09-06 | 2005-10-05 | キヤノン株式会社 | 差動排気システム及び露光装置 |
US7093568B2 (en) * | 2003-01-13 | 2006-08-22 | Ford Global Technologies, Llc | Control of autoignition timing in a HCCI engine |
EP1491955A1 (de) | 2003-06-27 | 2004-12-29 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US6977713B2 (en) * | 2003-12-08 | 2005-12-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8094288B2 (en) | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7361911B2 (en) | 2004-12-09 | 2008-04-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070085984A1 (en) * | 2005-10-18 | 2007-04-19 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
TWI330762B (en) | 2005-03-29 | 2010-09-21 | Asml Netherlands Bv | Seal of a lithographic apparatus, lithographic apparatus, device manufacturing method and data storage medium |
US7502095B2 (en) * | 2005-03-29 | 2009-03-10 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
DE102006044591A1 (de) * | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
DE102008000957A1 (de) * | 2008-04-03 | 2009-10-08 | Carl Zeiss Smt Ag | Schutzmodul sowie EUV-Lithographievorrichtung mit Schutzmodul |
NL1036957A1 (nl) | 2008-06-13 | 2009-12-15 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
JP5495547B2 (ja) * | 2008-12-25 | 2014-05-21 | キヤノン株式会社 | 処理装置、およびデバイス製造方法 |
DE102009016319A1 (de) * | 2009-04-06 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage |
FI20105626A0 (fi) * | 2010-06-03 | 2010-06-03 | Hs Foils Oy | Erittäin ohut berylliumikkuna ja menetelmä sen valmistamiseksi |
KR101846336B1 (ko) * | 2010-06-25 | 2018-04-06 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 방법 |
JP5839672B2 (ja) * | 2011-09-28 | 2016-01-06 | 株式会社日立製作所 | 低真空軟x線実験装置 |
JP6280116B2 (ja) * | 2012-08-03 | 2018-02-14 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置および方法 |
NL2023213A (en) * | 2018-07-05 | 2020-01-09 | Asml Netherlands Bv | A lithographic apparatus and cooling apparatus |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4539695A (en) * | 1984-01-06 | 1985-09-03 | The Perkin-Elmer Corporation | X-Ray lithography system |
JPS61104620A (ja) * | 1984-10-29 | 1986-05-22 | Fujitsu Ltd | X線露光装置 |
DE3752314T2 (de) * | 1986-07-11 | 2000-09-14 | Canon Kk | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung |
US4862490A (en) * | 1986-10-23 | 1989-08-29 | Hewlett-Packard Company | Vacuum windows for soft x-ray machines |
US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
US5063586A (en) * | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
JP3026284B2 (ja) * | 1990-09-18 | 2000-03-27 | 住友電気工業株式会社 | X線窓材とその製造方法 |
-
1991
- 1991-09-19 JP JP03239244A patent/JP3127511B2/ja not_active Expired - Fee Related
-
1992
- 1992-08-31 EP EP92114847A patent/EP0532968B1/de not_active Expired - Lifetime
- 1992-08-31 DE DE69232367T patent/DE69232367T2/de not_active Expired - Fee Related
- 1992-09-15 US US07/945,146 patent/US5305364A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0532968A1 (de) | 1993-03-24 |
JPH0582417A (ja) | 1993-04-02 |
US5305364A (en) | 1994-04-19 |
EP0532968B1 (de) | 2002-01-23 |
DE69232367T2 (de) | 2002-08-14 |
JP3127511B2 (ja) | 2001-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |