DE69232950T2 - Halbleiterspeichervorrichtung - Google Patents

Halbleiterspeichervorrichtung

Info

Publication number
DE69232950T2
DE69232950T2 DE69232950T DE69232950T DE69232950T2 DE 69232950 T2 DE69232950 T2 DE 69232950T2 DE 69232950 T DE69232950 T DE 69232950T DE 69232950 T DE69232950 T DE 69232950T DE 69232950 T2 DE69232950 T2 DE 69232950T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232950T
Other languages
English (en)
Other versions
DE69232950D1 (de
Inventor
Takao Akaogi
Yasushige Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30489491A external-priority patent/JP3144002B2/ja
Priority claimed from JP31668291A external-priority patent/JP2625298B2/ja
Priority claimed from JP31945191A external-priority patent/JP3106624B2/ja
Priority claimed from JP34734391A external-priority patent/JP3543973B2/ja
Priority claimed from JP421692A external-priority patent/JP3116505B2/ja
Priority claimed from JP6173092A external-priority patent/JP2689808B2/ja
Priority claimed from JP21038092A external-priority patent/JP3201838B2/ja
Priority claimed from JP24995892A external-priority patent/JPH06103798A/ja
Priority claimed from JP31047292A external-priority patent/JP3360855B2/ja
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Publication of DE69232950D1 publication Critical patent/DE69232950D1/de
Application granted granted Critical
Publication of DE69232950T2 publication Critical patent/DE69232950T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69232950T 1991-11-20 1992-11-20 Halbleiterspeichervorrichtung Expired - Fee Related DE69232950T2 (de)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP30489491A JP3144002B2 (ja) 1991-11-20 1991-11-20 フラッシュ・メモリ
JP31668291A JP2625298B2 (ja) 1991-11-29 1991-11-29 不揮発性半導体記憶装置
JP31945191A JP3106624B2 (ja) 1991-12-03 1991-12-03 フラッシュ・メモリ
JP34734391A JP3543973B2 (ja) 1991-12-27 1991-12-27 半導体記憶装置及びその情報消去方法
JP421692A JP3116505B2 (ja) 1992-01-13 1992-01-13 フラッシュ・メモリ
JP6173092A JP2689808B2 (ja) 1992-03-18 1992-03-18 不揮発性半導体記憶装置
JP21038092A JP3201838B2 (ja) 1992-08-06 1992-08-06 半導体記憶装置
JP24995892A JPH06103798A (ja) 1992-09-18 1992-09-18 半導体記憶装置
JP31047292A JP3360855B2 (ja) 1992-11-19 1992-11-19 一括消去型不揮発性半導体記憶装置およびその試験方法

Publications (2)

Publication Number Publication Date
DE69232950D1 DE69232950D1 (de) 2003-04-10
DE69232950T2 true DE69232950T2 (de) 2003-08-28

Family

ID=27576488

Family Applications (5)

Application Number Title Priority Date Filing Date
DE69227011T Expired - Fee Related DE69227011T2 (de) 1991-11-20 1992-11-20 Löschbare Halbleiterspeicheranordnung mit verbesserter Zuverlässigkeit
DE69232470T Expired - Fee Related DE69232470T2 (de) 1991-11-20 1992-11-20 Flash-löschbare Halbleiterspeicheranordnung mit verbesserter Zuverlässigkeit
DE69232949T Expired - Fee Related DE69232949T2 (de) 1991-11-20 1992-11-20 Löschbare Flash-Halbleiterspeichervorrichtung
DE69233305T Expired - Fee Related DE69233305T2 (de) 1991-11-20 1992-11-20 Halbleiterspeichervorrichtung
DE69232950T Expired - Fee Related DE69232950T2 (de) 1991-11-20 1992-11-20 Halbleiterspeichervorrichtung

Family Applications Before (4)

Application Number Title Priority Date Filing Date
DE69227011T Expired - Fee Related DE69227011T2 (de) 1991-11-20 1992-11-20 Löschbare Halbleiterspeicheranordnung mit verbesserter Zuverlässigkeit
DE69232470T Expired - Fee Related DE69232470T2 (de) 1991-11-20 1992-11-20 Flash-löschbare Halbleiterspeicheranordnung mit verbesserter Zuverlässigkeit
DE69232949T Expired - Fee Related DE69232949T2 (de) 1991-11-20 1992-11-20 Löschbare Flash-Halbleiterspeichervorrichtung
DE69233305T Expired - Fee Related DE69233305T2 (de) 1991-11-20 1992-11-20 Halbleiterspeichervorrichtung

Country Status (3)

Country Link
US (6) US5761127A (de)
EP (5) EP0543656B1 (de)
DE (5) DE69227011T2 (de)

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US6031771A (en) * 1996-10-28 2000-02-29 Macronix International Co., Ltd. Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
JP4060938B2 (ja) * 1998-05-25 2008-03-12 シャープ株式会社 不揮発性半導体記憶装置
DE19930531C2 (de) 1999-07-01 2001-07-05 Infineon Technologies Ag Tunnelkontakt und Verfahren zu seiner Herstellung
JP3653449B2 (ja) * 2000-06-15 2005-05-25 シャープ株式会社 不揮発性半導体記憶装置
JP4043703B2 (ja) 2000-09-04 2008-02-06 株式会社ルネサステクノロジ 半導体装置、マイクロコンピュータ、及びフラッシュメモリ
JP3606799B2 (ja) * 2000-10-05 2005-01-05 沖電気工業株式会社 半導体記憶装置
US6826068B1 (en) * 2001-01-18 2004-11-30 Kabushiki Kaisha Toshiba Fast data readout semiconductor storage apparatus
US6381174B1 (en) * 2001-03-12 2002-04-30 Micron Technology, Inc. Non-volatile memory device with redundant columns
JP2002324858A (ja) * 2001-04-25 2002-11-08 Hitachi Ltd 不揮発性半導体記憶装置、そのデータ消去方法、情報処理装置および不揮発性記憶装置システム
US7068544B2 (en) * 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
US6963103B2 (en) * 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US6815781B2 (en) * 2001-09-25 2004-11-09 Matrix Semiconductor, Inc. Inverted staggered thin film transistor with salicided source/drain structures and method of making same
US6646924B1 (en) * 2002-08-02 2003-11-11 Macronix International Co, Ltd. Non-volatile memory and operating method thereof
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US7046551B2 (en) * 2003-03-25 2006-05-16 Mosel Vitelic, Inc. Nonvolatile memories with asymmetric transistors, nonvolatile memories with high voltage lines extending in the column direction, and nonvolatile memories with decoding circuits sharing a common area
JP2004348867A (ja) * 2003-05-22 2004-12-09 Toshiba Corp 不揮発性半導体記憶装置およびそれを用いた電子カードと電子装置
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US7652923B2 (en) * 2007-02-02 2010-01-26 Macronix International Co., Ltd. Semiconductor device and memory and method of operating thereof
US20090046512A1 (en) * 2007-08-17 2009-02-19 Munif Farhan Halloush Reliability System for Use with Non-Volatile Memory Devices
JP2009080884A (ja) * 2007-09-26 2009-04-16 Panasonic Corp 不揮発性半導体記憶装置
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
US9000525B2 (en) 2010-05-19 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for alignment marks
US9225565B2 (en) 2012-03-20 2015-12-29 Intel Deutschland Gmbh Device for generating a vector-modulated output signal and method for generating a vector-modulated output signal
CN103456363A (zh) * 2013-08-29 2013-12-18 上海宏力半导体制造有限公司 电可擦除可编程只读存储器的控制方法
CN105336376A (zh) * 2014-07-30 2016-02-17 中芯国际集成电路制造(上海)有限公司 存储阵列、存储器及编程、无冗余和冗余读取、操作方法
CN105336374A (zh) 2014-07-30 2016-02-17 中芯国际集成电路制造(上海)有限公司 存储阵列、存储器及编程、无冗余和冗余读取、操作方法
US10062440B1 (en) * 2017-06-20 2018-08-28 Winbond Electronics Corp. Non-volatile semiconductor memory device and reading method thereof
CN114647120B (zh) * 2022-03-14 2023-10-17 京东方科技集团股份有限公司 液晶手写板及其控制方法

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Also Published As

Publication number Publication date
EP1126472A1 (de) 2001-08-22
EP1126473A1 (de) 2001-08-22
DE69232470T2 (de) 2002-07-11
EP0543656A3 (en) 1994-09-21
DE69232949T2 (de) 2003-08-28
EP1126474B1 (de) 2003-03-05
US6014329A (en) 2000-01-11
DE69227011T2 (de) 1999-02-18
EP0841667B1 (de) 2002-03-06
EP0841667A2 (de) 1998-05-13
US5835408A (en) 1998-11-10
DE69232949D1 (de) 2003-04-10
US5870337A (en) 1999-02-09
DE69233305T2 (de) 2004-07-08
EP0543656A2 (de) 1993-05-26
US5761127A (en) 1998-06-02
US5910916A (en) 1999-06-08
EP0543656B1 (de) 1998-09-16
DE69232470D1 (de) 2002-04-11
US5835416A (en) 1998-11-10
EP1126474A1 (de) 2001-08-22
EP1126472B1 (de) 2003-03-05
EP0841667A3 (de) 1999-06-16
DE69227011D1 (de) 1998-10-22
EP1126473B1 (de) 2004-02-18
DE69232950D1 (de) 2003-04-10
DE69233305D1 (de) 2004-03-25

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8364 No opposition during term of opposition
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