DE69302244D1 - Halbleiter-Schutzkomponente - Google Patents

Halbleiter-Schutzkomponente

Info

Publication number
DE69302244D1
DE69302244D1 DE69302244T DE69302244T DE69302244D1 DE 69302244 D1 DE69302244 D1 DE 69302244D1 DE 69302244 T DE69302244 T DE 69302244T DE 69302244 T DE69302244 T DE 69302244T DE 69302244 D1 DE69302244 D1 DE 69302244D1
Authority
DE
Germany
Prior art keywords
protection component
semiconductor protection
semiconductor
component
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69302244T
Other languages
English (en)
Other versions
DE69302244T2 (de
Inventor
Keith Michael Hutchings
Andrew Leonard Goodyear
Paul Arthur Gough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69302244D1 publication Critical patent/DE69302244D1/de
Publication of DE69302244T2 publication Critical patent/DE69302244T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
DE69302244T 1992-08-11 1993-08-09 Halbleiter-Schutzkomponente Expired - Fee Related DE69302244T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929216953A GB9216953D0 (en) 1992-08-11 1992-08-11 A semiconductor component

Publications (2)

Publication Number Publication Date
DE69302244D1 true DE69302244D1 (de) 1996-05-23
DE69302244T2 DE69302244T2 (de) 1996-11-07

Family

ID=10720114

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69302244T Expired - Fee Related DE69302244T2 (de) 1992-08-11 1993-08-09 Halbleiter-Schutzkomponente

Country Status (5)

Country Link
US (1) US5352915A (de)
EP (1) EP0583037B1 (de)
JP (1) JPH06163889A (de)
DE (1) DE69302244T2 (de)
GB (1) GB9216953D0 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2705173B1 (fr) * 1993-05-10 1995-07-28 Sgs Thomson Microelectronics Composant limiteur de courant serie.
GB9313651D0 (en) * 1993-07-01 1993-08-18 Philips Electronics Uk Ltd A semiconductor device
US6001678A (en) * 1995-03-14 1999-12-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
JP3303601B2 (ja) * 1995-05-19 2002-07-22 日産自動車株式会社 溝型半導体装置
US5648670A (en) * 1995-06-07 1997-07-15 Sgs-Thomson Microelectronics, Inc. Trench MOS-gated device with a minimum number of masks
JP3168147B2 (ja) * 1995-09-14 2001-05-21 株式会社日立製作所 半導体装置とそれを用いた３相インバータ
US5883402A (en) * 1995-11-06 1999-03-16 Kabushiki Kaisha Toshiba Semiconductor device and protection method
US5818084A (en) * 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
JP3397057B2 (ja) * 1996-11-01 2003-04-14 日産自動車株式会社 半導体装置
US5910873A (en) * 1997-02-19 1999-06-08 National Semiconductor Corporation Field oxide transistor based feedback circuit for electrical overstress protection
US5846862A (en) 1997-05-20 1998-12-08 Advanced Micro Devices Semiconductor device having a vertical active region and method of manufacture thereof
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US6583001B1 (en) * 2001-05-18 2003-06-24 Sun Microsystems, Inc. Method for introducing an equivalent RC circuit in a MOS device using resistive paths
US6586817B1 (en) * 2001-05-18 2003-07-01 Sun Microsystems, Inc. Device including a resistive path to introduce an equivalent RC circuit
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
US7667264B2 (en) * 2004-09-27 2010-02-23 Alpha And Omega Semiconductor Limited Shallow source MOSFET
US7977768B2 (en) * 2008-04-01 2011-07-12 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
CN102414817B (zh) * 2009-09-14 2014-01-08 丰田自动车株式会社 具备具有二极管区和igbt区的半导体基板的半导体装置
US8129778B2 (en) * 2009-12-02 2012-03-06 Fairchild Semiconductor Corporation Semiconductor devices and methods for making the same
WO2020079908A1 (ja) 2018-10-18 2020-04-23 ウチヤ・サーモスタット株式会社 電気素子の接続方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

Also Published As

Publication number Publication date
US5352915A (en) 1994-10-04
EP0583037B1 (de) 1996-04-17
DE69302244T2 (de) 1996-11-07
EP0583037A1 (de) 1994-02-16
GB9216953D0 (en) 1992-09-23
JPH06163889A (ja) 1994-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee