DE69303094D1 - Planarer Potentialtopf-Fotodetektor mit Isolierung mittels Ionenimplantierung - Google Patents

Planarer Potentialtopf-Fotodetektor mit Isolierung mittels Ionenimplantierung

Info

Publication number
DE69303094D1
DE69303094D1 DE69303094T DE69303094T DE69303094D1 DE 69303094 D1 DE69303094 D1 DE 69303094D1 DE 69303094 T DE69303094 T DE 69303094T DE 69303094 T DE69303094 T DE 69303094T DE 69303094 D1 DE69303094 D1 DE 69303094D1
Authority
DE
Germany
Prior art keywords
isolation
ion implantation
potential well
well photodetector
planar potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69303094T
Other languages
English (en)
Other versions
DE69303094T2 (de
Inventor
Sanghee Park Hui
Shing-Shem Pei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69303094D1 publication Critical patent/DE69303094D1/de
Publication of DE69303094T2 publication Critical patent/DE69303094T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE69303094T 1992-03-31 1993-03-25 Planarer Potentialtopf-Fotodetektor mit Isolierung mittels Ionenimplantierung Expired - Fee Related DE69303094T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/860,853 US5223704A (en) 1992-03-31 1992-03-31 Planar buried quantum well photodetector

Publications (2)

Publication Number Publication Date
DE69303094D1 true DE69303094D1 (de) 1996-07-18
DE69303094T2 DE69303094T2 (de) 1997-01-16

Family

ID=25334180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69303094T Expired - Fee Related DE69303094T2 (de) 1992-03-31 1993-03-25 Planarer Potentialtopf-Fotodetektor mit Isolierung mittels Ionenimplantierung

Country Status (4)

Country Link
US (2) US5223704A (de)
EP (1) EP0564163B1 (de)
JP (1) JP2706030B2 (de)
DE (1) DE69303094T2 (de)

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US6668521B1 (en) * 1989-02-24 2003-12-30 Southpac Trust International, Inc. Method for applying a band about a sheet of material and a floral grouping
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US5990490A (en) * 1998-06-29 1999-11-23 Miracle Technology Co., Ltd. Optical electronic IC capable of photo detection
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
JP4330210B2 (ja) * 1999-07-30 2009-09-16 富士通株式会社 光半導体装置及びその製造方法
US6576490B2 (en) * 2001-05-09 2003-06-10 National Research Council Of Canada Method for micro-fabricating a pixelless infrared imaging device
KR100653995B1 (ko) * 2005-03-17 2006-12-05 주식회사 하이닉스반도체 반도체소자 제조를 위한 국부적 임플란트 방법
US20070262296A1 (en) * 2006-05-11 2007-11-15 Matthias Bauer Photodetectors employing germanium layers
JP6383516B2 (ja) 2013-04-19 2018-08-29 ライトスピン テクノロジーズ、インク． 集積アバランシェ・フォトダイオード・アレイ
US9768211B2 (en) 2015-05-06 2017-09-19 LightSpin Technologies Inc. Integrated avalanche photodiode arrays
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
US11641003B2 (en) 2019-12-03 2023-05-02 Northwestern University Methods of fabricating planar infrared photodetectors
CN116666485B (zh) * 2023-07-10 2024-01-30 中国科学院半导体研究所 近红外探测器及其制备方法

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US4745452A (en) * 1984-09-24 1988-05-17 Massachusetts Institute Of Technology Tunneling transfer devices
JPS61204988A (ja) * 1985-03-08 1986-09-11 Fujitsu Ltd 半導体受光素子
JPH0712100B2 (ja) * 1985-03-25 1995-02-08 株式会社日立製作所 半導体発光素子
FR2581482B1 (fr) * 1985-05-03 1987-07-10 Labo Electronique Physique Photodiode pin a faible courant de fuite
US4764246A (en) * 1985-08-06 1988-08-16 American Telephone And Telegraph Company, At&T Bell Laboratories Buried undercut mesa-like waveguide and method of making same
JPS639987A (ja) * 1986-06-30 1988-01-16 Fujitsu Ltd 半導体受光素子
JPS6313381A (ja) * 1986-07-03 1988-01-20 Nok Corp 光電センサ
JPS63120479A (ja) * 1986-11-10 1988-05-24 Nec Corp フオトダイオ−ド
JPS63133581A (ja) * 1986-11-25 1988-06-06 Nec Corp 光双安定素子及びその製造方法
US4894526A (en) * 1987-01-15 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Infrared-radiation detector device
JP2573201B2 (ja) * 1987-02-26 1997-01-22 株式会社東芝 半導体素子の拡散層形成方法
FR2618435B1 (fr) * 1987-07-23 1989-10-27 Synthelabo Derives de benzimidazole, leur preparation et leur application en therapeutique
JPS6490570A (en) * 1987-09-30 1989-04-07 Shimadzu Corp Photodiode
JPH0199877A (ja) * 1987-10-13 1989-04-18 Dainippon Printing Co Ltd 画像形成方法
JPH01124473A (ja) * 1987-11-10 1989-05-17 Terumo Corp カテーテル用ガイドワイヤー
JPH01241192A (ja) * 1988-03-23 1989-09-26 Fujitsu Ltd 半導体装置
JPH01297868A (ja) * 1988-05-25 1989-11-30 Nec Corp プレーナ型半導体受光素子
CA1314614C (en) * 1988-06-06 1993-03-16 Clyde George Bethea Quantum-well radiation detector
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array
JPH0730973B2 (ja) * 1988-10-04 1995-04-10 ダイキン工業株式会社 アキュムレータ及びその製造方法
JPH02199877A (ja) * 1989-01-27 1990-08-08 Nec Corp 光受信器及び光電子集積回路
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
US5075749A (en) * 1989-12-29 1991-12-24 At&T Bell Laboratories Optical device including a grating
JPH03236276A (ja) * 1990-02-14 1991-10-22 Ricoh Co Ltd 光機能素子
US5012301A (en) * 1990-02-22 1991-04-30 Northern Telecom Limited Three terminal semiconductor device
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5144637A (en) * 1990-04-30 1992-09-01 At&T Bell Laboratories Inline diplex lightwave transceiver

Also Published As

Publication number Publication date
EP0564163B1 (de) 1996-06-12
DE69303094T2 (de) 1997-01-16
EP0564163A1 (de) 1993-10-06
US5281542A (en) 1994-01-25
US5223704A (en) 1993-06-29
JPH0613641A (ja) 1994-01-21
JP2706030B2 (ja) 1998-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee