DE69303893D1 - Betatigungseinheiten und mikrosensoren in soi-technik - Google Patents
Betatigungseinheiten und mikrosensoren in soi-technikInfo
- Publication number
- DE69303893D1 DE69303893D1 DE69303893T DE69303893T DE69303893D1 DE 69303893 D1 DE69303893 D1 DE 69303893D1 DE 69303893 T DE69303893 T DE 69303893T DE 69303893 T DE69303893 T DE 69303893T DE 69303893 D1 DE69303893 D1 DE 69303893D1
- Authority
- DE
- Germany
- Prior art keywords
- diaphragm
- microsensors
- actuators
- silicon
- soi technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/847,690 US5177661A (en) | 1989-01-13 | 1992-03-06 | SOI diaphgram sensor |
PCT/US1993/001952 WO1993018382A1 (en) | 1992-03-06 | 1993-03-05 | Soi actuators and microsensors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69303893D1 true DE69303893D1 (de) | 1996-09-05 |
DE69303893T2 DE69303893T2 (de) | 1996-11-28 |
Family
ID=25301252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69303893T Expired - Fee Related DE69303893T2 (de) | 1992-03-06 | 1993-03-05 | Betatigungseinheiten und mikrosensoren in soi-technik |
Country Status (7)
Country | Link |
---|---|
US (2) | US5177661A (de) |
EP (1) | EP0629286B1 (de) |
JP (1) | JPH07504509A (de) |
AT (1) | ATE141008T1 (de) |
CA (1) | CA2130677A1 (de) |
DE (1) | DE69303893T2 (de) |
WO (1) | WO1993018382A1 (de) |
Families Citing this family (95)
Publication number | Priority date | Publication date | Assignee | Title |
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US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
US5490034A (en) * | 1989-01-13 | 1996-02-06 | Kopin Corporation | SOI actuators and microsensors |
US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5767405A (en) | 1992-04-07 | 1998-06-16 | The Charles Stark Draper Laboratory, Inc. | Comb-drive micromechanical tuning fork gyroscope with piezoelectric readout |
JP2769661B2 (ja) * | 1992-09-29 | 1998-06-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5369544A (en) * | 1993-04-05 | 1994-11-29 | Ford Motor Company | Silicon-on-insulator capacitive surface micromachined absolute pressure sensor |
US20030199179A1 (en) * | 1993-11-16 | 2003-10-23 | Formfactor, Inc. | Contact tip structure for microelectronic interconnection elements and method of making same |
US7073254B2 (en) * | 1993-11-16 | 2006-07-11 | Formfactor, Inc. | Method for mounting a plurality of spring contact elements |
US20020053734A1 (en) * | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
SE9304145D0 (sv) * | 1993-12-10 | 1993-12-10 | Pharmacia Lkb Biotech | Sätt att tillverka hålrumsstrukturer |
US5415726A (en) * | 1993-12-21 | 1995-05-16 | Delco Electronics Corporation | Method of making a bridge-supported accelerometer structure |
KR0132490B1 (ko) * | 1994-07-21 | 1998-04-16 | 문정환 | 박막트랜지스터 제조방법 |
US5581035A (en) | 1994-08-29 | 1996-12-03 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode |
US5646348A (en) | 1994-08-29 | 1997-07-08 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode and fabrication technique therefor |
US5894452A (en) * | 1994-10-21 | 1999-04-13 | The Board Of Trustees Of The Leland Stanford Junior University | Microfabricated ultrasonic immersion transducer |
FI100918B (fi) * | 1995-02-17 | 1998-03-13 | Vaisala Oy | Pintamikromekaaninen, symmetrinen paine-eroanturi |
JPH08274350A (ja) * | 1995-03-29 | 1996-10-18 | Yokogawa Electric Corp | 半導体圧力センサ及びその製造方法 |
US5578528A (en) * | 1995-05-02 | 1996-11-26 | Industrial Technology Research Institute | Method of fabrication glass diaphragm on silicon macrostructure |
US5567332A (en) * | 1995-06-09 | 1996-10-22 | Fsi International | Micro-machine manufacturing process |
FR2736654B1 (fr) * | 1995-07-13 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements |
JPH0983029A (ja) * | 1995-09-11 | 1997-03-28 | Mitsubishi Electric Corp | 薄膜圧電素子の製造方法 |
US8033838B2 (en) * | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
JP2001511884A (ja) * | 1996-07-10 | 2001-08-14 | ハネウェル データ インスツルメンツ インコーポレイテッド | 誤差補償を有する圧力変換器 |
EP0890998A1 (de) * | 1997-07-07 | 1999-01-13 | STMicroelectronics S.r.l. | Herstellungsverfahren und integrierter piezoresistiver Drucksensor mit einem Diaphragma aus polykristallinem Halbleitermaterial |
US6472244B1 (en) | 1996-07-31 | 2002-10-29 | Sgs-Thomson Microelectronics S.R.L. | Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material |
DE19648424C1 (de) * | 1996-11-22 | 1998-06-25 | Siemens Ag | Mikromechanischer Sensor |
SG86994A1 (en) * | 1997-07-11 | 2002-03-19 | Inst Of Microelectronics Nat U | Method of fabricating a silicon microphone |
JP3426498B2 (ja) * | 1997-08-13 | 2003-07-14 | 株式会社日立ユニシアオートモティブ | 圧力センサ |
US5982709A (en) * | 1998-03-31 | 1999-11-09 | The Board Of Trustees Of The Leland Stanford Junior University | Acoustic transducers and method of microfabrication |
EP1115649B1 (de) * | 1998-08-27 | 2007-07-11 | Infineon Technologies AG | Mikromechanisches bauelement mit verschlossenen membranöffnungen |
DE19839606C1 (de) | 1998-08-31 | 2000-04-27 | Siemens Ag | Mikromechanisches Bauelement und Verfahren zu dessen Herstellung |
US6002507A (en) | 1998-12-01 | 1999-12-14 | Xerox Corpoation | Method and apparatus for an integrated laser beam scanner |
USRE38437E1 (en) | 1998-12-01 | 2004-02-24 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
ATE252225T1 (de) * | 1998-12-15 | 2003-11-15 | Fraunhofer Ges Forschung | Verfahren zum erzeugen eines mikro- elektromechanischen elements |
US6297069B1 (en) * | 1999-01-28 | 2001-10-02 | Honeywell Inc. | Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly |
US6232139B1 (en) * | 1999-01-29 | 2001-05-15 | Sandia Corporation | Method of making suspended thin-film semiconductor piezoelectric devices |
US6056888A (en) * | 1999-04-19 | 2000-05-02 | Motorola, Inc. | Electronic component and method of manufacture |
US6272928B1 (en) * | 2000-01-24 | 2001-08-14 | Kulite Semiconductor Products | Hermetically sealed absolute and differential pressure transducer |
DE10024266B4 (de) * | 2000-05-17 | 2010-06-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements |
US6521965B1 (en) * | 2000-09-12 | 2003-02-18 | Robert Bosch Gmbh | Integrated pressure sensor |
FI112644B (fi) * | 2000-11-10 | 2003-12-31 | Vaisala Oyj | Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi |
US6420201B1 (en) * | 2001-01-03 | 2002-07-16 | Amkor Technology, Inc. | Method for forming a bond wire pressure sensor die package |
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JP6959697B2 (ja) | 2016-01-15 | 2021-11-05 | ロヒンニ リミテッド ライアビリティ カンパニー | 装置上のカバーを介してバックライトで照らす装置及び方法 |
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EP3258235A1 (de) | 2016-06-16 | 2017-12-20 | Huba Control Ag | Differenzialdruckwandler |
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JPH0797642B2 (ja) * | 1987-05-15 | 1995-10-18 | 日産自動車株式会社 | 圧力変換装置の製造方法 |
JPH01136378A (ja) * | 1987-11-24 | 1989-05-29 | Nissan Motor Co Ltd | 圧力変換装置の製造方法 |
US4783821A (en) * | 1987-11-25 | 1988-11-08 | The Regents Of The University Of California | IC processed piezoelectric microphone |
US4816125A (en) * | 1987-11-25 | 1989-03-28 | The Regents Of The University Of California | IC processed piezoelectric microphone |
JPH01145872A (ja) * | 1987-12-02 | 1989-06-07 | Yokogawa Electric Corp | 半導体圧力センサの製造方法 |
US4904978A (en) * | 1988-04-29 | 1990-02-27 | Solartron Electronics, Inc. | Mechanical sensor for high temperature environments |
US4808549A (en) * | 1988-05-27 | 1989-02-28 | Ford Motor Company | Method for fabricating a silicon force transducer |
US4849070A (en) * | 1988-09-14 | 1989-07-18 | The United States Of America As Represented By The Secretary Of The Army | Process for fabricating three-dimensional, free-standing microstructures |
US5095401A (en) * | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
US5258097A (en) * | 1992-11-12 | 1993-11-02 | Ford Motor Company | Dry-release method for sacrificial layer microstructure fabrication |
-
1992
- 1992-03-06 US US07/847,690 patent/US5177661A/en not_active Expired - Lifetime
- 1992-12-18 US US07/993,096 patent/US5493470A/en not_active Expired - Lifetime
-
1993
- 1993-03-05 CA CA002130677A patent/CA2130677A1/en not_active Abandoned
- 1993-03-05 DE DE69303893T patent/DE69303893T2/de not_active Expired - Fee Related
- 1993-03-05 JP JP5515882A patent/JPH07504509A/ja active Pending
- 1993-03-05 AT AT93907203T patent/ATE141008T1/de not_active IP Right Cessation
- 1993-03-05 WO PCT/US1993/001952 patent/WO1993018382A1/en active IP Right Grant
- 1993-03-05 EP EP93907203A patent/EP0629286B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH07504509A (ja) | 1995-05-18 |
EP0629286B1 (de) | 1996-07-31 |
US5177661A (en) | 1993-01-05 |
EP0629286A1 (de) | 1994-12-21 |
WO1993018382A1 (en) | 1993-09-16 |
US5493470A (en) | 1996-02-20 |
CA2130677A1 (en) | 1993-09-07 |
DE69303893T2 (de) | 1996-11-28 |
ATE141008T1 (de) | 1996-08-15 |
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