DE69309565T2 - Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich - Google Patents

Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich

Info

Publication number
DE69309565T2
DE69309565T2 DE69309565T DE69309565T DE69309565T2 DE 69309565 T2 DE69309565 T2 DE 69309565T2 DE 69309565 T DE69309565 T DE 69309565T DE 69309565 T DE69309565 T DE 69309565T DE 69309565 T2 DE69309565 T2 DE 69309565T2
Authority
DE
Germany
Prior art keywords
trench
surface area
field effect
effect transistor
epitaxial region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69309565T
Other languages
English (en)
Other versions
DE69309565D1 (de
Inventor
Mike F Chang
Fwu-Iuan Hshieh
Sze-Hon Kwan
King Owyang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Application granted granted Critical
Publication of DE69309565D1 publication Critical patent/DE69309565D1/de
Publication of DE69309565T2 publication Critical patent/DE69309565T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69309565T 1992-07-24 1993-07-23 Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich Expired - Fee Related DE69309565T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/918,954 US5910669A (en) 1992-07-24 1992-07-24 Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof

Publications (2)

Publication Number Publication Date
DE69309565D1 DE69309565D1 (de) 1997-05-15
DE69309565T2 true DE69309565T2 (de) 1997-07-24

Family

ID=25441223

Family Applications (2)

Application Number Title Priority Date Filing Date
DE0580452T Pending DE580452T1 (de) 1992-07-24 1993-07-23 Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich.
DE69309565T Expired - Fee Related DE69309565T2 (de) 1992-07-24 1993-07-23 Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE0580452T Pending DE580452T1 (de) 1992-07-24 1993-07-23 Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich.

Country Status (5)

Country Link
US (2) US5910669A (de)
EP (1) EP0580452B1 (de)
JP (1) JP3387563B2 (de)
KR (1) KR100305978B1 (de)
DE (2) DE580452T1 (de)

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Also Published As

Publication number Publication date
KR940003092A (ko) 1994-02-19
EP0580452A1 (de) 1994-01-26
JP3387563B2 (ja) 2003-03-17
US5532179A (en) 1996-07-02
KR100305978B1 (ko) 2001-12-15
DE69309565D1 (de) 1997-05-15
US5910669A (en) 1999-06-08
DE580452T1 (de) 1994-10-06
JPH06224437A (ja) 1994-08-12
EP0580452B1 (de) 1997-04-09

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