DE69310422D1 - Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern - Google Patents

Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern

Info

Publication number
DE69310422D1
DE69310422D1 DE69310422T DE69310422T DE69310422D1 DE 69310422 D1 DE69310422 D1 DE 69310422D1 DE 69310422 T DE69310422 T DE 69310422T DE 69310422 T DE69310422 T DE 69310422T DE 69310422 D1 DE69310422 D1 DE 69310422D1
Authority
DE
Germany
Prior art keywords
vapor phase
phase epitaxy
compound semiconductors
semiconductors
epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69310422T
Other languages
English (en)
Other versions
DE69310422T2 (de
Inventor
Atsushi Watanabe
Hiroshi Amano
Kazumasa Hiramatsu
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Publication of DE69310422D1 publication Critical patent/DE69310422D1/de
Application granted granted Critical
Publication of DE69310422T2 publication Critical patent/DE69310422T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
DE69310422T 1992-03-06 1993-02-01 Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern Expired - Fee Related DE69310422T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04049711A JP3131005B2 (ja) 1992-03-06 1992-03-06 化合物半導体気相成長装置

Publications (2)

Publication Number Publication Date
DE69310422D1 true DE69310422D1 (de) 1997-06-12
DE69310422T2 DE69310422T2 (de) 1997-11-06

Family

ID=12838776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69310422T Expired - Fee Related DE69310422T2 (de) 1992-03-06 1993-02-01 Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern

Country Status (4)

Country Link
US (1) US5370738A (de)
EP (1) EP0559326B1 (de)
JP (1) JP3131005B2 (de)
DE (1) DE69310422T2 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
JP3008782B2 (ja) * 1994-07-15 2000-02-14 信越半導体株式会社 気相成長方法およびその装置
JP3042335B2 (ja) * 1994-10-25 2000-05-15 信越半導体株式会社 気相成長方法及びその装置
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
KR100272752B1 (ko) * 1996-03-22 2001-05-02 쓰치야 히로오 기상성장장치및기상성장방법
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US5891251A (en) * 1996-08-07 1999-04-06 Macleish; Joseph H. CVD reactor having heated process chamber within isolation chamber
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
JPH1154442A (ja) * 1997-08-07 1999-02-26 Shin Etsu Handotai Co Ltd 化合物半導体エピタキシャルウェーハの製造方法およびこれに用いる気相成長装置
EP1190122B1 (de) * 1999-05-13 2004-02-11 EMF Ireland Limited Verfahren und vorrichtung zum epitaktischem wachsen eines materials auf einem substrat
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
EP2293322A1 (de) * 2000-06-08 2011-03-09 Genitech, Inc. Verfahren zur Abscheidung einer Metallnitridschicht
JP4588894B2 (ja) * 2001-01-31 2010-12-01 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
JP2002371361A (ja) * 2001-06-18 2002-12-26 Japan Pionics Co Ltd 気相成長装置及び気相成長方法
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US7163587B2 (en) * 2002-02-08 2007-01-16 Axcelis Technologies, Inc. Reactor assembly and processing method
US6800134B2 (en) 2002-03-26 2004-10-05 Micron Technology, Inc. Chemical vapor deposition methods and atomic layer deposition methods
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US20050221618A1 (en) * 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
JP2006080374A (ja) * 2004-09-10 2006-03-23 Sharp Corp 窒化物半導体の製造装置および窒化物半導体レーザ素子
JP4934595B2 (ja) * 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
JP4598568B2 (ja) * 2005-03-09 2010-12-15 大陽日酸株式会社 気相成長装置
WO2006121264A1 (en) * 2005-05-09 2006-11-16 Asm Genitech Korea Ltd. Multiple inlet tomic layer deposition reactor
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4534978B2 (ja) * 2005-12-21 2010-09-01 トヨタ自動車株式会社 半導体薄膜製造装置
JP4193883B2 (ja) * 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
JP2008034780A (ja) * 2006-07-07 2008-02-14 Fuji Electric Holdings Co Ltd エピタキシャルＳｉＣ膜付き半導体ＳｉＣ基板の製造方法およびそのエピタキシャルＳｉＣ成膜装置
KR101355638B1 (ko) * 2006-11-09 2014-01-29 한국에이에스엠지니텍 주식회사 원자층 증착 장치
US20080131979A1 (en) * 2006-12-04 2008-06-05 Sumitomo Electric Industries, Ltd. Vapor-Phase Growth System and Vapor-Phase Growth Method
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
JP5064132B2 (ja) * 2007-07-25 2012-10-31 シャープ株式会社 気相成長装置、及び半導体素子の製造方法
JP4466723B2 (ja) 2007-11-21 2010-05-26 住友電気工業株式会社 有機金属気相成長装置
KR101376336B1 (ko) 2007-11-27 2014-03-18 한국에이에스엠지니텍 주식회사 원자층 증착 장치
WO2009082608A1 (en) * 2007-12-20 2009-07-02 S.O.I.Tec Silicon On Insulator Technologies Apparatus for delivering precursor gases to an epitaxial growth substrate
JP5060324B2 (ja) * 2008-01-31 2012-10-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び処理容器
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
CN101924023A (zh) * 2009-06-09 2010-12-22 日本派欧尼株式会社 Iii族氮化物半导体的气相生长装置
WO2011019920A1 (en) * 2009-08-12 2011-02-17 Georgia State University Research Foundation, Inc. High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith
WO2011063007A2 (en) * 2009-11-18 2011-05-26 Rec Silicon Inc Fluid bed reactor
WO2012127305A1 (en) * 2011-03-21 2012-09-27 Centrotherm Photovoltaics Ag Gas supply for a processing furnace
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
JP2012248803A (ja) * 2011-05-31 2012-12-13 Hitachi Cable Ltd 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
CN103732791B (zh) * 2011-08-22 2016-04-27 Soitec公司 包括反应室内的前体气体炉的沉积系统及相关方法
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
TWI480414B (zh) * 2012-11-14 2015-04-11 Ind Tech Res Inst 噴氣系統及氣相磊晶設備
US20160194753A1 (en) * 2012-12-27 2016-07-07 Showa Denko K.K. SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM
US20150345046A1 (en) * 2012-12-27 2015-12-03 Showa Denko K.K. Film-forming device
DE102016101003A1 (de) 2016-01-21 2017-07-27 Aixtron Se CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse
CN107587117B (zh) * 2017-08-16 2019-06-11 武汉华星光电半导体显示技术有限公司 一种气体扩散装置
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
KR102564228B1 (ko) * 2021-04-29 2023-08-09 주식회사 테스 유기금속화학기상증착장치
WO2023175826A1 (ja) * 2022-03-17 2023-09-21 株式会社Kokusai Electric 基板処理装置、ガスノズル、半導体装置の製造方法、基板処理方法及びプログラム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055478B2 (ja) * 1982-10-19 1985-12-05 松下電器産業株式会社 気相成長方法
US4731255A (en) * 1984-09-26 1988-03-15 Applied Materials Japan, Inc. Gas-phase growth process and an apparatus for the same
JPS61186288A (ja) * 1985-02-14 1986-08-19 Nec Corp 炭化珪素化合物半導体の気相エピタキシヤル成長装置
JPH0691020B2 (ja) * 1986-02-14 1994-11-14 日本電信電話株式会社 気相成長方法および装置
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
JPH01136971A (ja) * 1987-11-20 1989-05-30 Fujitsu Ltd 気相成長装置
GB2213837B (en) * 1987-12-22 1992-03-11 Philips Electronic Associated Electronic device manufacture with deposition of material
JPH0225577A (ja) * 1988-07-15 1990-01-29 Mitsubishi Electric Corp 薄膜形成装置
JPH02150040A (ja) * 1988-11-30 1990-06-08 Fujitsu Ltd 気相成長装置
JPH03250623A (ja) * 1990-02-28 1991-11-08 Nec Corp ３―５族化合物半導体の気相成長方法
FR2661554A1 (fr) * 1990-04-30 1991-10-31 Philips Electronique Lab Dispositif d'introduction des gaz dans la chambre d'un reacteur d'epitaxie, chambre de reacteur comportant un tel dispositif d'introduction de gaz, et utilisation d'une telle chambre pour la realisation de couches semiconductrices.
JP2722833B2 (ja) * 1991-03-18 1998-03-09 富士通株式会社 気相エピタキシャル成長装置および気相エピタキシャル成長方法
US5254210A (en) * 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures

Also Published As

Publication number Publication date
EP0559326B1 (de) 1997-05-07
JPH06216030A (ja) 1994-08-05
JP3131005B2 (ja) 2001-01-31
EP0559326A1 (de) 1993-09-08
DE69310422T2 (de) 1997-11-06
US5370738A (en) 1994-12-06

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee