DE69311174D1 - Piezoelektrisches/elektrostriktives Element mit Hilfselektrode zwischen einer piezoelektrischen/elektrostriktiven Schicht und dem Substrat - Google Patents

Piezoelektrisches/elektrostriktives Element mit Hilfselektrode zwischen einer piezoelektrischen/elektrostriktiven Schicht und dem Substrat

Info

Publication number
DE69311174D1
DE69311174D1 DE69311174T DE69311174T DE69311174D1 DE 69311174 D1 DE69311174 D1 DE 69311174D1 DE 69311174 T DE69311174 T DE 69311174T DE 69311174 T DE69311174 T DE 69311174T DE 69311174 D1 DE69311174 D1 DE 69311174D1
Authority
DE
Germany
Prior art keywords
piezoelectric
electrostrictive
substrate
auxiliary electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69311174T
Other languages
English (en)
Other versions
DE69311174T2 (de
Inventor
Yukihisa Takeuchi
Koji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE69311174D1 publication Critical patent/DE69311174D1/de
Application granted granted Critical
Publication of DE69311174T2 publication Critical patent/DE69311174T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
DE1993611174 1992-03-17 1993-03-16 Piezoelektrisches/elektrostriktives Element mit Hilfselektrode zwischen einer piezoelektrischen/elektrostriktiven Schicht und dem Substrat Expired - Lifetime DE69311174T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9184992A JP2665106B2 (ja) 1992-03-17 1992-03-17 圧電／電歪膜型素子

Publications (2)

Publication Number Publication Date
DE69311174D1 true DE69311174D1 (de) 1997-07-10
DE69311174T2 DE69311174T2 (de) 1997-10-30

Family

ID=14038024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1993611174 Expired - Lifetime DE69311174T2 (de) 1992-03-17 1993-03-16 Piezoelektrisches/elektrostriktives Element mit Hilfselektrode zwischen einer piezoelektrischen/elektrostriktiven Schicht und dem Substrat

Country Status (4)

Country Link
US (1) US5281888A (de)
EP (1) EP0561616B1 (de)
JP (1) JP2665106B2 (de)
DE (1) DE69311174T2 (de)

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JP3957528B2 (ja) * 2002-03-05 2007-08-15 日本碍子株式会社 圧電／電歪膜型素子
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JP4815743B2 (ja) * 2004-01-14 2011-11-16 パナソニック株式会社 圧電素子の製造方法
KR100528350B1 (ko) 2004-02-27 2005-11-15 삼성전자주식회사 잉크젯 프린트헤드의 압전 액츄에이터 및 그 형성 방법
JP4611127B2 (ja) 2004-06-14 2011-01-12 パナソニック株式会社 電気機械信号選択素子
WO2007001063A1 (ja) 2005-06-29 2007-01-04 Ngk Insulators, Ltd. 圧電／電歪膜型素子
EP2037252A4 (de) 2006-07-04 2012-10-24 Ngk Insulators Ltd Piezoelektrischer filmsensor
WO2008004582A1 (fr) 2006-07-04 2008-01-10 Ngk Insulators, Ltd. Capteur du type film PIéZOélectrique/éLECTROSTRICTIf
WO2008004700A1 (fr) 2006-07-04 2008-01-10 Ngk Insulators, Ltd. Capteur à film piézoélectrique
EP1882920A1 (de) * 2006-07-28 2008-01-30 IEE INTERNATIONAL ELECTRONICS & ENGINEERING S.A. Herstellungsverfahren eines Folienensors
ATE533228T1 (de) * 2008-06-18 2011-11-15 Nxp Bv Mems-resonator zum filtern und mischen
EP2477247A1 (de) * 2009-09-07 2012-07-18 NGK Insulators, Ltd. Verfahren zur herstellung piezoelektrischer/elektrostriktiver filmelemente
JP5714361B2 (ja) 2011-03-01 2015-05-07 日本碍子株式会社 端子電極形成方法及びそれを用いた圧電／電歪素子の製造方法
JP6106840B2 (ja) * 2012-03-23 2017-04-05 ヤマハ株式会社 Ｐｚｔデバイス
DE102013206933A1 (de) * 2013-04-17 2014-10-23 Continental Automotive Gmbh Modulare Aktuatoreinheit für ein Einspritzventil
GB2532781A (en) * 2014-11-28 2016-06-01 Skf Ab An assembly comprising at least an electrical component mounted on a substrate, a component suitable for such an assembly
JP2017103267A (ja) * 2015-11-30 2017-06-08 セイコーエプソン株式会社 圧電素子、圧電素子の形成方法および超音波装置
FR3114147B1 (fr) * 2020-09-14 2023-03-03 Wormsensing Objet fonctionnalise avec capteur d’ondes mecaniques integre et procede de fabrication associe

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Also Published As

Publication number Publication date
EP0561616A3 (de) 1995-04-19
EP0561616A2 (de) 1993-09-22
JPH05267742A (ja) 1993-10-15
EP0561616B1 (de) 1997-06-04
JP2665106B2 (ja) 1997-10-22
DE69311174T2 (de) 1997-10-30
US5281888A (en) 1994-01-25

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