DE69315496T2 - Verfahren zur Behandlung eines aktiven Materials - Google Patents

Verfahren zur Behandlung eines aktiven Materials

Info

Publication number
DE69315496T2
DE69315496T2 DE69315496T DE69315496T DE69315496T2 DE 69315496 T2 DE69315496 T2 DE 69315496T2 DE 69315496 T DE69315496 T DE 69315496T DE 69315496 T DE69315496 T DE 69315496T DE 69315496 T2 DE69315496 T2 DE 69315496T2
Authority
DE
Germany
Prior art keywords
treatment
active material
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69315496T
Other languages
English (en)
Other versions
DE69315496D1 (de
Inventor
Hideshi Kuwabara
Yasushi Kawasumi
Tetsuo Asaba
Kenji Makino
Yuzo Kataoka
Yasuhiro Sekine
Shigeru Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19704792A external-priority patent/JPH0645260A/ja
Priority claimed from JP34639692A external-priority patent/JP3461181B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69315496D1 publication Critical patent/DE69315496D1/de
Publication of DE69315496T2 publication Critical patent/DE69315496T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/72—Organic compounds not provided for in groups B01D53/48 - B01D53/70, e.g. hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
DE69315496T 1992-07-23 1993-07-22 Verfahren zur Behandlung eines aktiven Materials Expired - Lifetime DE69315496T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19704792A JPH0645260A (ja) 1992-07-23 1992-07-23 半導体装置，その製造方法および薄膜堆積装置
JP34639692A JP3461181B2 (ja) 1992-12-25 1992-12-25 有機アルミニウム化合物処理方法

Publications (2)

Publication Number Publication Date
DE69315496D1 DE69315496D1 (de) 1998-01-15
DE69315496T2 true DE69315496T2 (de) 1998-05-28

Family

ID=26510135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69315496T Expired - Lifetime DE69315496T2 (de) 1992-07-23 1993-07-22 Verfahren zur Behandlung eines aktiven Materials

Country Status (3)

Country Link
US (2) US5534069A (de)
EP (1) EP0580158B1 (de)
DE (1) DE69315496T2 (de)

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US5620524A (en) * 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US5774148A (en) * 1995-10-19 1998-06-30 Lexmark International, Inc. Printhead with field oxide as thermal barrier in chip
US6142163A (en) * 1996-03-29 2000-11-07 Lam Research Corporation Method and apparatus for pressure control in vacuum processors
US5803107A (en) * 1996-03-29 1998-09-08 Lam Research Corporation Method and apparatus for pressure control in vacuum processors
US5758680A (en) * 1996-03-29 1998-06-02 Lam Research Corporation Method and apparatus for pressure control in vacuum processors
US6107608A (en) * 1997-03-24 2000-08-22 Micron Technology, Inc. Temperature controlled spin chuck
US6089184A (en) * 1997-06-11 2000-07-18 Tokyo Electron Limited CVD apparatus and CVD method
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
JP2000150406A (ja) * 1998-11-13 2000-05-30 Nec Corp ランプアニール装置
US6455403B1 (en) * 1999-01-04 2002-09-24 Taiwan Semiconductor Manufacturing Company Shallow trench contact structure to solve the problem of schottky diode leakage
WO2000051174A1 (en) 1999-02-26 2000-08-31 Trikon Holdings Limited A method of processing a polymer layer
GB2354528B (en) * 1999-09-25 2004-03-10 Trikon Holdings Ltd Delivery of liquid precursors to semiconductor processing reactors
CN1185694C (zh) 1999-06-26 2005-01-19 特利康控股有限公司 在基体上形成膜的方法和装置
KR100363081B1 (ko) 1999-09-16 2002-11-30 삼성전자 주식회사 박막 형성장치
JP3673893B2 (ja) * 1999-10-15 2005-07-20 日本碍子株式会社 液滴吐出装置
US20030143846A1 (en) * 2000-09-25 2003-07-31 Akira Sekiya Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds
US7112758B2 (en) * 2003-01-10 2006-09-26 The University Of Connecticut Apparatus and method for solution plasma spraying
KR101022767B1 (ko) * 2003-01-15 2011-03-17 삼성전자주식회사 플라즈마 발생 시스템
US6972582B2 (en) * 2003-02-10 2005-12-06 Solid State Measurements, Inc. Apparatus and method for measuring semiconductor wafer electrical properties
KR100626366B1 (ko) * 2003-07-18 2006-09-20 삼성전자주식회사 기상 증착 시스템
JP4510414B2 (ja) * 2003-09-12 2010-07-21 キヤノン株式会社 光電変換装置
JP3884440B2 (ja) * 2004-03-15 2007-02-21 株式会社東芝 フィルタおよび半導体処理装置
JP4667030B2 (ja) * 2004-12-10 2011-04-06 キヤノン株式会社 固体撮像装置用の半導体基板とその製造方法
GB0505852D0 (en) * 2005-03-22 2005-04-27 Boc Group Plc Method of treating a gas stream
GB0718801D0 (en) * 2007-09-25 2007-11-07 P2I Ltd Vapour delivery system
US8410935B2 (en) * 2008-07-10 2013-04-02 Radarfind Corporation Rotatable tags for automated location and monitoring of moveable objects and related systems
US9589817B2 (en) 2011-04-15 2017-03-07 Illinois Tool Works Inc. Dryer
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9613908B2 (en) * 2014-12-15 2017-04-04 Applied Materials, Inc. Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications
US10208378B2 (en) * 2016-12-09 2019-02-19 Hermes-Epitek Corp. Chemical vapor deposition apparatus
EP3606293B1 (de) * 2017-03-31 2022-09-07 Fuji Corporation Plasmaerzeugungsvorrichtung
JP7175210B2 (ja) * 2019-02-04 2022-11-18 東京エレクトロン株式会社 排気装置、処理システム及び処理方法

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CA1127227A (en) * 1977-10-03 1982-07-06 Ichiro Endo Liquid jet recording process and apparatus therefor
JPS5936879B2 (ja) * 1977-10-14 1984-09-06 キヤノン株式会社 熱転写記録用媒体
US4330787A (en) * 1978-10-31 1982-05-18 Canon Kabushiki Kaisha Liquid jet recording device
US4345262A (en) * 1979-02-19 1982-08-17 Canon Kabushiki Kaisha Ink jet recording method
US4463359A (en) * 1979-04-02 1984-07-31 Canon Kabushiki Kaisha Droplet generating method and apparatus thereof
US4228004A (en) * 1979-04-12 1980-10-14 Thermco Products Corporation Method and apparatus for removal of by-products of chemical vapor deposition from oil for vacuum pump
US4313124A (en) * 1979-05-18 1982-01-26 Canon Kabushiki Kaisha Liquid jet recording process and liquid jet recording head
EP0040939B1 (de) * 1980-05-27 1985-01-02 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Herstellung von Cadmium-Quecksilber-Telluriden
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
US4558333A (en) * 1981-07-09 1985-12-10 Canon Kabushiki Kaisha Liquid jet recording head
JPS59123670A (ja) * 1982-12-28 1984-07-17 Canon Inc インクジエツトヘツド
JPS59138461A (ja) * 1983-01-28 1984-08-08 Canon Inc 液体噴射記録装置
JPS6071260A (ja) * 1983-09-28 1985-04-23 Erumu:Kk 記録装置
US4555389A (en) * 1984-04-27 1985-11-26 Toyo Sanso Co., Ltd. Method of and apparatus for burning exhaust gases containing gaseous silane
US5137701A (en) * 1984-09-17 1992-08-11 Mundt Randall S Apparatus and method for eliminating unwanted materials from a gas flow line
US5261961A (en) * 1985-07-23 1993-11-16 Canon Kabushiki Kaisha Device for forming deposited film
JPH0830273B2 (ja) * 1986-07-10 1996-03-27 株式会社東芝 薄膜形成方法及び装置
JPS63290279A (ja) * 1987-05-22 1988-11-28 Fujitsu Ltd 薄膜形成装置
US4735633A (en) * 1987-06-23 1988-04-05 Chiu Kin Chung R Method and system for vapor extraction from gases
US4940213A (en) * 1987-08-24 1990-07-10 Kabushiki Kaisha Toshiba Exhaust processing apparatus
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
DE3839153C2 (de) * 1988-11-17 1993-10-28 Werner Dipl Chem Fabian Verfahren zur Entgiftung der Prozeßabgase beim plasmachemischen Ätzen
JP2731855B2 (ja) * 1989-02-14 1998-03-25 アネルバ株式会社 減圧気相成長装置
EP0448223B1 (de) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
US5200639A (en) * 1990-05-31 1993-04-06 Canon Kabushiki Kaisha Semiconductor device with isolating groove containing single crystalline aluminum wiring
JP2586700B2 (ja) * 1990-07-13 1997-03-05 日本電気株式会社 配線形成方法
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
JPH04295089A (ja) * 1991-03-26 1992-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導膜製造装置

Also Published As

Publication number Publication date
EP0580158A1 (de) 1994-01-26
US5534069A (en) 1996-07-09
US6156657A (en) 2000-12-05
EP0580158B1 (de) 1997-12-03
DE69315496D1 (de) 1998-01-15

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