DE69324473D1 - Maske für photolithographie - Google Patents

Maske für photolithographie

Info

Publication number
DE69324473D1
DE69324473D1 DE69324473T DE69324473T DE69324473D1 DE 69324473 D1 DE69324473 D1 DE 69324473D1 DE 69324473 T DE69324473 T DE 69324473T DE 69324473 T DE69324473 T DE 69324473T DE 69324473 D1 DE69324473 D1 DE 69324473D1
Authority
DE
Germany
Prior art keywords
mask pattern
leveling
leveling bars
edges
bars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69324473T
Other languages
English (en)
Other versions
DE69324473T2 (de
Inventor
Jang Chen
James Matthews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
Microunity Systems Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25234329&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69324473(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Microunity Systems Engineering Inc filed Critical Microunity Systems Engineering Inc
Publication of DE69324473D1 publication Critical patent/DE69324473D1/de
Application granted granted Critical
Publication of DE69324473T2 publication Critical patent/DE69324473T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
DE69324473T 1992-01-16 1993-01-15 Maske für photolithographie Expired - Lifetime DE69324473T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/821,793 US5242770A (en) 1992-01-16 1992-01-16 Mask for photolithography
PCT/US1993/000456 WO1993014445A1 (en) 1992-01-16 1993-01-15 Improved mask for photolithography

Publications (2)

Publication Number Publication Date
DE69324473D1 true DE69324473D1 (en) 1999-05-20
DE69324473T2 DE69324473T2 (de) 1999-11-25

Family

ID=25234329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324473T Expired - Lifetime DE69324473T2 (de) 1992-01-16 1993-01-15 Maske für photolithographie

Country Status (9)

Country Link
US (1) US5242770A (de)
EP (1) EP0620931B1 (de)
JP (1) JP3009923B2 (de)
KR (1) KR100216143B1 (de)
AT (1) ATE178998T1 (de)
AU (1) AU3478793A (de)
CA (1) CA2124077A1 (de)
DE (1) DE69324473T2 (de)
WO (1) WO1993014445A1 (de)

Families Citing this family (199)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5379233A (en) * 1991-07-19 1995-01-03 Lsi Logic Corporation Method and structure for improving patterning design for processing
US6109775A (en) * 1991-07-19 2000-08-29 Lsi Logic Corporation Method for adjusting the density of lines and contact openings across a substrate region for improving the chemical-mechanical polishing of a thin-film later disposed thereon
EP0529971B1 (de) * 1991-08-22 2003-07-23 Nikon Corporation Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters
JP3194155B2 (ja) * 1992-01-31 2001-07-30 キヤノン株式会社 半導体デバイスの製造方法及びそれを用いた投影露光装置
JP3210123B2 (ja) * 1992-03-27 2001-09-17 キヤノン株式会社 結像方法及び該方法を用いたデバイス製造方法
US7073187B1 (en) 1992-12-09 2006-07-04 Sedna Patent Services, Llc Menu-driven television program access system and method
US5667918A (en) * 1993-09-27 1997-09-16 Micron Technology, Inc. Method of lithography using reticle pattern blinders
US7865567B1 (en) 1993-12-02 2011-01-04 Discovery Patent Holdings, Llc Virtual on-demand electronic book
US5447810A (en) * 1994-02-09 1995-09-05 Microunity Systems Engineering, Inc. Masks for improved lithographic patterning for off-axis illumination lithography
KR0171919B1 (ko) * 1994-03-11 1999-03-30 김영환 노광마스크
IT1271298B (it) * 1994-12-20 1997-05-27 Alcatel Italia Processo fotolitografico per contatto per la realizzazione di linee metalliche su un substrato
CN1060185C (zh) * 1995-02-21 2001-01-03 Basf公司 低端羧基含量的热塑性聚酯的制备
US5682323A (en) 1995-03-06 1997-10-28 Lsi Logic Corporation System and method for performing optical proximity correction on macrocell libraries
KR0172558B1 (ko) * 1995-03-22 1999-03-20 김주용 노광 마스크의 제조방법
US5657235A (en) * 1995-05-03 1997-08-12 International Business Machines Corporation Continuous scale optical proximity correction by mask maker dose modulation
US5663893A (en) * 1995-05-03 1997-09-02 Microunity Systems Engineering, Inc. Method for generating proximity correction features for a lithographic mask pattern
US5712613A (en) * 1995-05-05 1998-01-27 Mcdonnell Douglas Corporation Computer-aided method for producing resistive tapers and resistive taper produced thereby
KR0160924B1 (ko) * 1995-06-30 1998-12-15 김주용 노광 마스크
KR0161437B1 (ko) * 1995-09-19 1999-02-01 김광호 반도체장치의 미세패턴 형성방법
US5631112A (en) * 1995-11-16 1997-05-20 Vanguard International Semiconductor Corporation Multiple exposure method for photo-exposing photosensitive layers upon high step height topography substrate layers
US5866913A (en) * 1995-12-19 1999-02-02 International Business Machines Corporation Proximity correction dose modulation for E-beam projection lithography
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
US5740068A (en) * 1996-05-30 1998-04-14 International Business Machines Corporation Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction
KR100229611B1 (ko) 1996-06-12 1999-11-15 구자홍 액정표시장치의 제조방법
KR0172801B1 (ko) * 1996-06-24 1999-03-20 김주용 공정 마진 테스트용 포토 마스크와 테스트 방법
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
US5920487A (en) * 1997-03-03 1999-07-06 Motorola Inc. Two dimensional lithographic proximity correction using DRC shape functions
US5900340A (en) * 1997-03-03 1999-05-04 Motorola, Inc. One dimensional lithographic proximity correction using DRC shape functions
US5827625A (en) * 1997-08-18 1998-10-27 Motorola, Inc. Methods of designing a reticle and forming a semiconductor device therewith
US6470489B1 (en) 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
US7093229B2 (en) * 1997-09-17 2006-08-15 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US6578188B1 (en) * 1997-09-17 2003-06-10 Numerical Technologies, Inc. Method and apparatus for a network-based mask defect printability analysis system
JP3085259B2 (ja) * 1997-09-17 2000-09-04 日本電気株式会社 露光パターン及びその発生方法
US6370679B1 (en) 1997-09-17 2002-04-09 Numerical Technologies, Inc. Data hierarchy layout correction and verification method and apparatus
US6757645B2 (en) 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US6453452B1 (en) 1997-12-12 2002-09-17 Numerical Technologies, Inc. Method and apparatus for data hierarchy maintenance in a system for mask description
US7617474B2 (en) * 1997-09-17 2009-11-10 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US5958635A (en) * 1997-10-20 1999-09-28 Motorola, Inc. Lithographic proximity correction through subset feature modification
US6114071A (en) * 1997-11-24 2000-09-05 Asml Masktools Netherlands B.V. Method of fine feature edge tuning with optically-halftoned mask
US6081658A (en) * 1997-12-31 2000-06-27 Avant! Corporation Proximity correction system for wafer lithography
JP2002501634A (ja) 1998-03-17 2002-01-15 エーエスエムエル マスクツールズ ネザーランズ ビー．ヴィ． 高透過率ハーフトーン型位相シフトマスクを用いた４分の１露光波長以下線形パターン形成方法
US6218089B1 (en) 1998-05-22 2001-04-17 Micron Technology, Inc. Photolithographic method
US6120952A (en) 1998-10-01 2000-09-19 Micron Technology, Inc. Methods of reducing proximity effects in lithographic processes
US6214494B1 (en) 1998-10-07 2001-04-10 International Business Machines Corporation Serif mask design methodology based on enhancing high spatial frequency contribution for improved printability
US6171739B1 (en) * 1998-12-04 2001-01-09 Advanced Micro Devices, Inc. Method of determining focus and coma of a lens at various locations in an imaging field
US6249904B1 (en) 1999-04-30 2001-06-19 Nicolas Bailey Cobb Method and apparatus for submicron IC design using edge fragment tagging to correct edge placement distortion
US6467076B1 (en) * 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6458493B2 (en) 1999-06-04 2002-10-01 International Business Machines Corporation Method to control nested to isolated line printing
JP3371852B2 (ja) 1999-07-09 2003-01-27 日本電気株式会社 レチクル
US6421820B1 (en) 1999-12-13 2002-07-16 Infineon Technologies Ag Semiconductor device fabrication using a photomask with assist features
US6338921B1 (en) 2000-01-07 2002-01-15 International Business Machines Corporation Mask with linewidth compensation and method of making same
US6596466B1 (en) 2000-01-25 2003-07-22 Cypress Semiconductor Corporation Contact structure and method of forming a contact structure
KR100603914B1 (ko) * 2000-02-14 2006-07-24 에이에스엠엘 마스크툴즈 비.브이. 포토마스크 지오메트리를 개선하는 방법
US6584609B1 (en) * 2000-02-28 2003-06-24 Numerical Technologies, Inc. Method and apparatus for mixed-mode optical proximity correction
US6544694B2 (en) 2000-03-03 2003-04-08 Koninklijke Philips Electronics N.V. Method of manufacturing a device by means of a mask phase-shifting mask for use in said method
US6548224B1 (en) * 2000-03-07 2003-04-15 Kulicke & Soffa Holdings, Inc. Wiring substrate features having controlled sidewall profiles
US6376131B1 (en) 2000-04-04 2002-04-23 Xilinx, Inc. Methods and structures for protecting reticles from ESD failure
US6571383B1 (en) 2000-04-28 2003-05-27 Infineon Technologies, Ag Semiconductor device fabrication using a photomask designed using modeling and empirical testing
US6335130B1 (en) * 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
TW512424B (en) 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
US6465139B1 (en) * 2000-06-05 2002-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Mask pattern for defining a floating gate region
EP1164432A1 (de) 2000-06-13 2001-12-19 ASML Masktools Netherlands B.V. Naheffektkorrektur mit Hilfsmustern variabler Dimensionen
US6383691B1 (en) * 2000-06-26 2002-05-07 Infineon Technologies Ag Photomask and method for increasing image aspect ratio while relaxing mask fabrication requirements
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US6523162B1 (en) 2000-08-02 2003-02-18 Numerical Technologies, Inc. General purpose shape-based layout processing scheme for IC layout modifications
DE10038928A1 (de) * 2000-08-09 2002-02-28 Infineon Technologies Ag Photolithographische Maske
JP2002075815A (ja) * 2000-08-23 2002-03-15 Sony Corp パターン検査装置及びこれを用いた露光装置制御システム
JP4646367B2 (ja) * 2000-08-25 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
TW447082B (en) * 2000-09-07 2001-07-21 United Microelectronics Corp Method for increasing the line width window in a semiconductor process
US6815129B1 (en) * 2000-09-26 2004-11-09 Euv Llc Compensation of flare-induced CD changes EUVL
US6792590B1 (en) 2000-09-29 2004-09-14 Numerical Technologies, Inc. Dissection of edges with projection points in a fabrication layout for correcting proximity effects
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
US6453457B1 (en) 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6451490B1 (en) 2000-11-08 2002-09-17 International Business Machines Corporation Method to overcome image shortening by use of sub-resolution reticle features
US6665856B1 (en) 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
US6596444B2 (en) 2000-12-15 2003-07-22 Dupont Photomasks, Inc. Photomask and method for correcting feature size errors on the same
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6553559B2 (en) 2001-01-05 2003-04-22 International Business Machines Corporation Method to determine optical proximity correction and assist feature rules which account for variations in mask dimensions
US6602728B1 (en) 2001-01-05 2003-08-05 International Business Machines Corporation Method for generating a proximity model based on proximity rules
US6541166B2 (en) 2001-01-18 2003-04-01 International Business Machines Corporation Method and apparatus for lithographically printing tightly nested and isolated device features using multiple mask exposures
KR100585469B1 (ko) * 2001-02-27 2006-06-02 에이에스엠엘 네델란즈 비.브이. 그레이바를 서브-해상도 어시스트 피처로 활용하는광근접성교정방법
US6792591B2 (en) * 2001-02-28 2004-09-14 Asml Masktools B.V. Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
DE60202230T2 (de) 2001-03-14 2005-12-15 Asml Masktools B.V. Naheffektkorrektur mittels nicht aufgelöster Hilfsstrukturen in Form von Leiterstäben
KR100618811B1 (ko) * 2001-03-20 2006-08-31 삼성전자주식회사 반도체 소자 제조를 위한 위상 반전 마스크 및 그 제조방법
KR100599054B1 (ko) 2001-04-11 2006-07-12 삼성전자주식회사 투과량 조절 마스크 및 그 제조방법
US7735052B2 (en) * 2001-04-24 2010-06-08 Asml Masktools Netherlands B.V. Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
US6789237B1 (en) * 2001-05-11 2004-09-07 Northwestern University Efficient model order reduction via multi-point moment matching
DE10127547C1 (de) * 2001-06-05 2003-03-20 Infineon Technologies Ag Verfahren zur Durchführung einer regelbasierten OPC bei gleichzeitigem Einsatz von Scatterbars
US6803155B2 (en) * 2001-07-31 2004-10-12 Micron Technology, Inc. Microlithographic device, microlithographic assist features, system for forming contacts and other structures, and method of determining mask patterns
DE10141485A1 (de) * 2001-08-23 2003-03-13 Infineon Technologies Ag Maske zum Herstellen von Halbleiterbauelementen
DE10203358A1 (de) * 2001-08-31 2003-04-03 Infineon Technologies Ag Photolithographische Maske
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
WO2003021353A1 (de) 2001-08-31 2003-03-13 Infineon Technologies Ag Photolithographische maske
DE10143723B4 (de) 2001-08-31 2006-09-28 Infineon Technologies Ag Verfahren zur Optimierung eines Layouts für eine Maske zur Verwendung bei der Halbleiterherstellung
US6670082B2 (en) 2001-10-09 2003-12-30 Numerical Technologies, Inc. System and method for correcting 3D effects in an alternating phase-shifting mask
DE10164306B4 (de) * 2001-12-28 2006-06-08 Infineon Technologies Ag Doppelbelichtung mit abbildenden Hilfstrukturen und verschiedenen Belichtungstools
US7233887B2 (en) * 2002-01-18 2007-06-19 Smith Bruce W Method of photomask correction and its optimization using localized frequency analysis
US6670646B2 (en) 2002-02-11 2003-12-30 Infineon Technologies Ag Mask and method for patterning a semiconductor wafer
US7252909B2 (en) * 2002-04-18 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method to reduce CD non-uniformity in IC manufacturing
US6929887B1 (en) 2002-04-18 2005-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Printable assist lines and the removal of such
DE10221648B4 (de) * 2002-05-15 2007-11-29 Infineon Technologies Ag Verfahren zur Erzeugung eines Maskensatzes für die Lithografie umfassend zumindest eine Maske sowie Verfahren zur Abbildung von Strukturen eines vorgegebenen Layouts in eine gemeinsame Belichtungsebene
US6800403B2 (en) * 2002-06-18 2004-10-05 Koninklijke Philips Electronics N.V. Techniques to characterize iso-dense effects for microdevice manufacture
DE10228546B4 (de) * 2002-06-26 2006-08-10 Infineon Technologies Ag Verfahren zur Strukturierung einer Lithographiemaske
JP4225745B2 (ja) * 2002-07-23 2009-02-18 株式会社ルネサステクノロジ パターン転写用フォトマスクのパターンレイアウト方法および半導体装置の製造方法
DE10240403A1 (de) * 2002-09-02 2004-03-11 Infineon Technologies Ag Maske zur Projektion eines Stukturmusters auf ein Halbleitersubstrat
US20040058550A1 (en) * 2002-09-19 2004-03-25 Infineon Technologies North America Corp. Dummy patterns for reducing proximity effects and method of using same
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US7141338B2 (en) * 2002-11-12 2006-11-28 Infineon Technologies Ag Sub-resolution sized assist features
CN1573554A (zh) * 2003-01-14 2005-02-02 Asml蒙片工具有限公司 用于接触孔掩模的光学逼近校正设计的方法
KR100519795B1 (ko) * 2003-02-07 2005-10-10 삼성전자주식회사 다층배선 형성을 위한 포토마스크 세트 및 이를 사용하여제조된 반도체장치
US6964032B2 (en) * 2003-02-28 2005-11-08 International Business Machines Corporation Pitch-based subresolution assist feature design
US7001693B2 (en) * 2003-02-28 2006-02-21 International Business Machines Corporation Binary OPC for assist feature layout optimization
US6989229B2 (en) * 2003-03-27 2006-01-24 Freescale Semiconductor, Inc. Non-resolving mask tiling method for flare reduction
US7480889B2 (en) * 2003-04-06 2009-01-20 Luminescent Technologies, Inc. Optimized photomasks for photolithography
US7124394B1 (en) 2003-04-06 2006-10-17 Luminescent Technologies, Inc. Method for time-evolving rectilinear contours representing photo masks
US7698665B2 (en) * 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
CN1299164C (zh) * 2003-04-08 2007-02-07 旺宏电子股份有限公司 消除密集图案与单一图案的关键尺寸偏差的方法
JP2004348118A (ja) * 2003-04-30 2004-12-09 Toshiba Corp フォトマスク及びそれを用いた露光方法、データ発生方法
JP2004354605A (ja) * 2003-05-28 2004-12-16 Matsushita Electric Ind Co Ltd 半導体設計レイアウトパタン生成方法および図形パタン生成装置
US20040248016A1 (en) * 2003-06-06 2004-12-09 Lucas Kevin D. Method of designing a reticle and forming a semiconductor device therewith
US7355673B2 (en) 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
CN100480860C (zh) * 2003-06-30 2009-04-22 Asml蒙片工具有限公司 用于次半波长光刻构图的改善的散射条opc应用方法
US7376930B2 (en) * 2003-06-30 2008-05-20 Asml Masktools B.V. Method, program product and apparatus for generating assist features utilizing an image field map
TWI237746B (en) * 2003-07-23 2005-08-11 Nanya Technology Corp Optical proximity correction method
US6983444B2 (en) * 2003-08-01 2006-01-03 Macronix International Co., Ltd. Mask for reducing proximity effect
CN100339765C (zh) * 2003-08-18 2007-09-26 旺宏电子股份有限公司 可降低光学接近效应的光罩
US6900124B1 (en) 2003-09-03 2005-05-31 Advanced Micro Devices, Inc. Patterning for elliptical Vss contact on flash memory
US6973636B2 (en) 2003-10-17 2005-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of defining forbidden pitches for a lithography exposure tool
DE10353798A1 (de) * 2003-11-13 2005-06-23 Infineon Technologies Ag Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske
JP4229857B2 (ja) * 2004-02-26 2009-02-25 株式会社ルネサステクノロジ 半導体装置の製造方法
TWI327685B (en) * 2004-04-09 2010-07-21 Asml Masktools Bv Optical proximity correction using chamfers and rounding at corners
US6977715B2 (en) * 2004-05-19 2005-12-20 Nanya Technology Corp. Method for optimizing NILS of exposed lines
JP4574250B2 (ja) * 2004-06-30 2010-11-04 キヤノン株式会社 フォトマスク
US7620930B2 (en) * 2004-08-24 2009-11-17 Asml Masktools B.V. Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
DE102004047263B4 (de) * 2004-09-24 2010-04-22 Qimonda Ag Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske
US7263684B2 (en) * 2004-12-06 2007-08-28 Texas Instruments Incorporated Correcting a mask pattern by selectively updating the positions of specific segments
DE102005002529B4 (de) * 2005-01-14 2008-12-04 Qimonda Ag Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske
DE102005002533B4 (de) * 2005-01-14 2007-09-13 Infineon Technologies Ag Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske
JP4634849B2 (ja) * 2005-04-12 2011-02-16 株式会社東芝 集積回路のパターンレイアウト、フォトマスク、半導体装置の製造方法、及びデータ作成方法
US7480891B2 (en) * 2005-04-29 2009-01-20 Cadence Design Systems, Inc. Method and apparatus of model-based photomask synthesis
US7506300B2 (en) * 2005-04-29 2009-03-17 Cadence Design Systems, Inc. Apparatus and method for breaking up and merging polygons
JP4389222B2 (ja) * 2005-05-02 2009-12-24 エルピーダメモリ株式会社 マスクデータ作成方法
US7381654B2 (en) * 2005-05-31 2008-06-03 Taiwan Semiconductor Manufacturing Co. Method for fabricating right-angle holes in a substrate
WO2007010621A1 (ja) * 2005-07-22 2007-01-25 Fujitsu Limited フォトマスクパターンデータの作成方法、そのフォトマスクパターンデータを用いて作成されたフォトマスク、及び、そのフォトマスクを用いた半導体装置の製造方法
US7707541B2 (en) * 2005-09-13 2010-04-27 Luminescent Technologies, Inc. Systems, masks, and methods for photolithography
US7788627B2 (en) * 2005-10-03 2010-08-31 Luminescent Technologies, Inc. Lithography verification using guard bands
WO2007041600A2 (en) * 2005-10-03 2007-04-12 Luminescent Technologies, Inc. Mask-pattern determination using topology types
WO2007041701A2 (en) * 2005-10-04 2007-04-12 Luminescent Technologies, Inc. Mask-patterns including intentional breaks
WO2007044557A2 (en) 2005-10-06 2007-04-19 Luminescent Technologies, Inc. System, masks, and methods for photomasks optimized with approximate and accurate merit functions
US7749662B2 (en) * 2005-10-07 2010-07-06 Globalfoundries Inc. Process margin using discrete assist features
US7934184B2 (en) * 2005-11-14 2011-04-26 Takumi Technology Corporation Integrated circuit design using modified cells
JP2007219436A (ja) * 2006-02-20 2007-08-30 Tdk Corp 露光用マスク、レジストパターンの形成方法および薄膜パターンの形成方法
US9035359B2 (en) 2006-03-09 2015-05-19 Tela Innovations, Inc. Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US8225239B2 (en) * 2006-03-09 2012-07-17 Tela Innovations, Inc. Methods for defining and utilizing sub-resolution features in linear topology
US8839175B2 (en) 2006-03-09 2014-09-16 Tela Innovations, Inc. Scalable meta-data objects
US8245180B2 (en) 2006-03-09 2012-08-14 Tela Innovations, Inc. Methods for defining and using co-optimized nanopatterns for integrated circuit design and apparatus implementing same
US8225261B2 (en) 2006-03-09 2012-07-17 Tela Innovations, Inc. Methods for defining contact grid in dynamic array architecture
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US9009641B2 (en) 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
US9230910B2 (en) 2006-03-09 2016-01-05 Tela Innovations, Inc. Oversized contacts and vias in layout defined by linearly constrained topology
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US8247846B2 (en) 2006-03-09 2012-08-21 Tela Innovations, Inc. Oversized contacts and vias in semiconductor chip defined by linearly constrained topology
US8448102B2 (en) 2006-03-09 2013-05-21 Tela Innovations, Inc. Optimizing layout of irregular structures in regular layout context
JP2007299993A (ja) * 2006-05-01 2007-11-15 Canon Inc 露光装置
KR100788372B1 (ko) * 2006-08-07 2008-01-02 동부일렉트로닉스 주식회사 Ｏｐｃ 마스크 패턴
US7648805B2 (en) * 2006-12-06 2010-01-19 International Business Machines Corporation Masks and methods of manufacture thereof
US8286107B2 (en) 2007-02-20 2012-10-09 Tela Innovations, Inc. Methods and systems for process compensation technique acceleration
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
US7888705B2 (en) 2007-08-02 2011-02-15 Tela Innovations, Inc. Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same
US7939224B2 (en) * 2007-09-14 2011-05-10 Qimonda Ag Mask with registration marks and method of fabricating integrated circuits
US8028252B2 (en) * 2007-09-14 2011-09-27 Luminescent Technologies Inc. Technique for determining mask patterns and write patterns
US8453094B2 (en) 2008-01-31 2013-05-28 Tela Innovations, Inc. Enforcement of semiconductor structure regularity for localized transistors and interconnect
JP5529391B2 (ja) * 2008-03-21 2014-06-25 ルネサスエレクトロニクス株式会社 ハーフトーン型位相シフトマスク、そのハーフトーン型位相シフトマスクを有する半導体装置の製造装置、およびそのハーフトーン型位相シフトマスクを用いた半導体装置の製造方法
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
US20090258302A1 (en) * 2008-04-10 2009-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-resolution assist feature of a photomask
KR100890409B1 (ko) * 2008-04-25 2009-03-26 주식회사 에스앤에스텍 하프톤형 위상반전 블랭크 마스크, 하프톤형 위상반전포토마스크 및 그의 제조방법
MY152456A (en) 2008-07-16 2014-09-30 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same
US9122832B2 (en) 2008-08-01 2015-09-01 Tela Innovations, Inc. Methods for controlling microloading variation in semiconductor wafer layout and fabrication
CN101650526B (zh) * 2008-08-13 2012-05-30 北京京东方光电科技有限公司 掩模板及其制造方法
US7910267B1 (en) 2008-12-12 2011-03-22 Western Digital (Fremont), Llc Method and system for providing optical proximity correction for structures such as a PMR nose
KR101113326B1 (ko) * 2009-07-01 2012-03-13 주식회사 하이닉스반도체 포토마스크의 보조패턴 형성방법
JP2011028120A (ja) * 2009-07-28 2011-02-10 Toshiba Corp パタン作成方法、パタン作成プログラムおよび半導体デバイスの製造方法
US8661392B2 (en) 2009-10-13 2014-02-25 Tela Innovations, Inc. Methods for cell boundary encroachment and layouts implementing the Same
US9232670B2 (en) 2010-02-02 2016-01-05 Apple Inc. Protection and assembly of outer glass surfaces of an electronic device housing
US8871409B2 (en) * 2010-07-26 2014-10-28 Carl Zeiss Sms Ltd. Lithographic targets for uniformity control
US9159627B2 (en) 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
JP5673947B2 (ja) * 2011-03-01 2015-02-18 大日本印刷株式会社 マスクパターンの補正方法、プログラム及び該補正方法を用いたフォトマスク
US9140976B2 (en) * 2012-09-14 2015-09-22 Macronix International Co., Ltd. Mask design with optically isolated via and proximity correction features
US9778577B2 (en) * 2013-01-23 2017-10-03 Csmc Technologies Fab2 Co., Ltd. Structure and method for testing strip width of scribing slot
CN105334694A (zh) * 2014-06-18 2016-02-17 上海华力微电子有限公司 一种光刻胶侧墙角度的预测及改善方法
US11099478B2 (en) * 2018-08-14 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask having recessed region

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
US4895780A (en) * 1987-05-13 1990-01-23 General Electric Company Adjustable windage method and mask for correction of proximity effect in submicron photolithography
KR960010023B1 (ko) * 1991-02-19 1996-07-25 후지쓰 가부시끼가이샤 투영노광(投影露光) 방법 및 투영노광용 광학 마스크

Also Published As

Publication number Publication date
KR100216143B1 (ko) 1999-08-16
WO1993014445A1 (en) 1993-07-22
EP0620931B1 (de) 1999-04-14
DE69324473T2 (de) 1999-11-25
KR940704016A (ko) 1994-12-12
CA2124077A1 (en) 1993-07-22
EP0620931A1 (de) 1994-10-26
EP0620931A4 (en) 1996-05-08
JPH07503554A (ja) 1995-04-13
AU3478793A (en) 1993-08-03
US5242770A (en) 1993-09-07
ATE178998T1 (de) 1999-04-15
JP3009923B2 (ja) 2000-02-14

Similar Documents

Publication Publication Date Title
DE69324473D1 (en) Maske für photolithographie
TW355810B (en) Masks for improved lithographic patterning for off-axis illumination lithography
DE68923247D1 (de) Verfahren zum Erzeugen eines Fotolackmusters.
GB2013909B (en) Mask apparatus for fine-line lithography
DE3378931D1 (en) Method for forming fine resist patterns
DE3369403D1 (en) Negative process for obtaining relief or resist patterns
DE69021773T2 (de) Lithographische Röntgenmaske und Verfahren zum Herstellen einer solchen Maske.
TW364072B (en) A photomask and a method for using the photomask to fabricate an electronic component
EP0104685A3 (en) Mask for obtaining texturized patterns in resist layers using x-ray lithography, and method of manufacturing the same
WO2001040869A3 (en) Mask design and method for controlled profile fabrication
EP0278076A3 (en) Lithographic mask for obtaining patterns
GB9515230D0 (en) Method of manufacturing a photo mask for manufacturing a semiconductor device
ES469410A2 (es) Mejoras introducidas en el objeto de la patente principal no452.982, concedida el 4 de noviembre de 1.977 por: Ÿun pro- cedimiento de preparacion de un relieve impresoŸ
JPS53100737A (en) Print pattern generator
JPS54152168A (en) Apparatus for forming resist pattern on circuit board
JPS5383806A (en) Treating solution for lithographic printing original plate
JPS55135837A (en) Manufacture of photomask
JPS5788451A (en) Photomask
SG68535A1 (en) Method of repairing phase-shifting lithographic masks
JPS52143772A (en) Alignment method of masks using special reference marks
JPS5277671A (en) Method and equipment of masking
JPS57132008A (en) Measuring method for pattern size
JPS55140838A (en) Mask preparing apparatus
GB9013255D0 (en) Method of photolithography for forming fine-line patterns
JPS52130288A (en) Patterning method

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASML MASKTOOLS NETHERLANDS B.V., VELDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: WUESTHOFF & WUESTHOFF PATENT- UND RECHTSANWAELTE, 8

8327 Change in the person/name/address of the patent owner

Owner name: ASML MASKTOOLS B.V., VELDHOVEN, NL

R071 Expiry of right

Ref document number: 620931

Country of ref document: EP