DE69326511D1 - Halbleiterspeichergerät mit einer Fehlerprüf- und Korrekturschaltung - Google Patents

Halbleiterspeichergerät mit einer Fehlerprüf- und Korrekturschaltung

Info

Publication number
DE69326511D1
DE69326511D1 DE69326511T DE69326511T DE69326511D1 DE 69326511 D1 DE69326511 D1 DE 69326511D1 DE 69326511 T DE69326511 T DE 69326511T DE 69326511 T DE69326511 T DE 69326511T DE 69326511 D1 DE69326511 D1 DE 69326511D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
correction circuit
error checking
checking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69326511T
Other languages
English (en)
Other versions
DE69326511T2 (de
Inventor
Sung-Hee Cho
Hyong-Gon Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69326511D1 publication Critical patent/DE69326511D1/de
Publication of DE69326511T2 publication Critical patent/DE69326511T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
DE69326511T 1992-07-30 1993-07-30 Halbleiterspeichergerät mit einer Fehlerprüf- und Korrekturschaltung Expired - Fee Related DE69326511T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920013685A KR950008789B1 (ko) 1992-07-30 1992-07-30 멀티-이씨씨(ecc)회로를 내장하는 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
DE69326511D1 true DE69326511D1 (de) 1999-10-28
DE69326511T2 DE69326511T2 (de) 2000-05-04

Family

ID=19337249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69326511T Expired - Fee Related DE69326511T2 (de) 1992-07-30 1993-07-30 Halbleiterspeichergerät mit einer Fehlerprüf- und Korrekturschaltung

Country Status (8)

Country Link
US (1) US5469450A (de)
EP (1) EP0581602B1 (de)
JP (1) JP3982641B2 (de)
KR (1) KR950008789B1 (de)
CN (1) CN1033607C (de)
DE (1) DE69326511T2 (de)
RU (1) RU2134916C1 (de)
TW (1) TW234763B (de)

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US5872802A (en) * 1996-05-03 1999-02-16 Cypress Semiconductor Corp. Parity generation and check circuit and method in read data path
US6397365B1 (en) * 1999-05-18 2002-05-28 Hewlett-Packard Company Memory error correction using redundant sliced memory and standard ECC mechanisms
KR100322542B1 (ko) * 1999-08-11 2002-03-18 윤종용 파이프 라인상의 고속동작을 구현하는 ｅｃｃ 회로를 구비하는동기식 반도체 메모리장치 및 이 동기식 반도체 메모리장치의 에러 체크 및 정정방법
US20030120858A1 (en) 2000-09-15 2003-06-26 Matrix Semiconductor, Inc. Memory devices and methods for use therewith
US6591394B2 (en) 2000-12-22 2003-07-08 Matrix Semiconductor, Inc. Three-dimensional memory array and method for storing data bits and ECC bits therein
US6700827B2 (en) 2001-02-08 2004-03-02 Integrated Device Technology, Inc. Cam circuit with error correction
KR100440491B1 (ko) * 2001-08-10 2004-07-15 김진수 새우 가공부산물을 사용한 발효 액젓과 그 제조 방법
US7219271B2 (en) * 2001-12-14 2007-05-15 Sandisk 3D Llc Memory device and method for redundancy/self-repair
US6901549B2 (en) * 2001-12-14 2005-05-31 Matrix Semiconductor, Inc. Method for altering a word stored in a write-once memory device
US6928590B2 (en) * 2001-12-14 2005-08-09 Matrix Semiconductor, Inc. Memory device and method for storing bits in non-adjacent storage locations in a memory array
US7301961B1 (en) 2001-12-27 2007-11-27 Cypress Semiconductor Corportion Method and apparatus for configuring signal lines according to idle codes
US6868022B2 (en) * 2003-03-28 2005-03-15 Matrix Semiconductor, Inc. Redundant memory structure using bad bit pointers
US6870749B1 (en) 2003-07-15 2005-03-22 Integrated Device Technology, Inc. Content addressable memory (CAM) devices with dual-function check bit cells that support column redundancy and check bit cells with reduced susceptibility to soft errors
US6987684B1 (en) 2003-07-15 2006-01-17 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having multi-block error detection logic and entry selective error correction logic therein
US7193876B1 (en) 2003-07-15 2007-03-20 Kee Park Content addressable memory (CAM) arrays having memory cells therein with different susceptibilities to soft errors
US7304875B1 (en) 2003-12-17 2007-12-04 Integrated Device Technology. Inc. Content addressable memory (CAM) devices that support background BIST and BISR operations and methods of operating same
JP4041076B2 (ja) 2004-02-27 2008-01-30 株式会社東芝 データ記憶システム
KR100632952B1 (ko) * 2004-09-30 2006-10-11 삼성전자주식회사 정전으로 인한 프로그램 페일의 유무를 판별할 수 있는방법 및 장치
US7277336B2 (en) * 2004-12-28 2007-10-02 Sandisk 3D Llc Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information
US7212454B2 (en) * 2005-06-22 2007-05-01 Sandisk 3D Llc Method and apparatus for programming a memory array
JP4790386B2 (ja) * 2005-11-18 2011-10-12 エルピーダメモリ株式会社 積層メモリ
JP4846384B2 (ja) * 2006-02-20 2011-12-28 株式会社東芝 半導体記憶装置
US7966518B2 (en) * 2007-05-15 2011-06-21 Sandisk Corporation Method for repairing a neighborhood of rows in a memory array using a patch table
US7958390B2 (en) * 2007-05-15 2011-06-07 Sandisk Corporation Memory device for repairing a neighborhood of rows in a memory array using a patch table
US8234539B2 (en) * 2007-12-06 2012-07-31 Sandisk Il Ltd. Correction of errors in a memory array
US8462532B1 (en) 2010-08-31 2013-06-11 Netlogic Microsystems, Inc. Fast quaternary content addressable memory cell
US8625320B1 (en) 2010-08-31 2014-01-07 Netlogic Microsystems, Inc. Quaternary content addressable memory cell having one transistor pull-down stack
US8553441B1 (en) 2010-08-31 2013-10-08 Netlogic Microsystems, Inc. Ternary content addressable memory cell having two transistor pull-down stack
US8582338B1 (en) 2010-08-31 2013-11-12 Netlogic Microsystems, Inc. Ternary content addressable memory cell having single transistor pull-down stack
US8773880B2 (en) 2011-06-23 2014-07-08 Netlogic Microsystems, Inc. Content addressable memory array having virtual ground nodes
US8837188B1 (en) 2011-06-23 2014-09-16 Netlogic Microsystems, Inc. Content addressable memory row having virtual ground and charge sharing
KR102048765B1 (ko) * 2013-01-15 2020-01-22 삼성전자주식회사 메모리 시스템의 동작 방법 및 메모리 시스템
US9251915B2 (en) * 2013-11-11 2016-02-02 Advantest Corporation Seamless fail analysis with memory efficient storage of fail lists
KR101768741B1 (ko) 2013-11-29 2017-08-16 씨제이제일제당 (주) 액젓의 제조방법 및 그 제조방법에 의해 제조된 액젓
US9800271B2 (en) * 2015-09-14 2017-10-24 Qualcomm Incorporated Error correction and decoding
KR20170051039A (ko) * 2015-11-02 2017-05-11 에스케이하이닉스 주식회사 반도체 장치 및 그 구동 방법
CN105895162B (zh) * 2016-03-30 2019-10-11 上海华虹宏力半导体制造有限公司 只读存储器及其数据读取方法

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JPS61134988A (ja) * 1984-12-04 1986-06-23 Toshiba Corp 半導体メモリにおける誤り検出訂正機能制御系
JPS63129600A (ja) * 1986-11-19 1988-06-01 Nec Corp 誤り検出・訂正回路付半導体記憶装置
JPS63285800A (ja) * 1987-05-19 1988-11-22 Fujitsu Ltd 半導体メモリ装置
JPH01201736A (ja) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp マイクロコンピュータ
JPH03217051A (ja) * 1990-01-23 1991-09-24 Oki Electric Ind Co Ltd 半導体記憶装置
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
US5282173A (en) * 1991-05-07 1994-01-25 Sony Corporation Semiconductor memory device with high speed transmission of address signals between a predecoder and a main decoder
JPH04332995A (ja) * 1991-05-07 1992-11-19 Sony Corp 半導体記憶装置
KR960000681B1 (ko) * 1992-11-23 1996-01-11 삼성전자주식회사 반도체메모리장치 및 그 메모리쎌 어레이 배열방법

Also Published As

Publication number Publication date
US5469450A (en) 1995-11-21
TW234763B (de) 1994-11-21
RU2134916C1 (ru) 1999-08-20
EP0581602B1 (de) 1999-09-22
DE69326511T2 (de) 2000-05-04
CN1033607C (zh) 1996-12-18
EP0581602A3 (en) 1996-07-17
JP3982641B2 (ja) 2007-09-26
EP0581602A2 (de) 1994-02-02
JPH06187795A (ja) 1994-07-08
CN1083962A (zh) 1994-03-16
KR940002864A (ko) 1994-02-19
KR950008789B1 (ko) 1995-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee