DE69327858D1 - Halbleiterspeichergerät mit einer Prüfschaltung - Google Patents

Halbleiterspeichergerät mit einer Prüfschaltung

Info

Publication number
DE69327858D1
DE69327858D1 DE69327858T DE69327858T DE69327858D1 DE 69327858 D1 DE69327858 D1 DE 69327858D1 DE 69327858 T DE69327858 T DE 69327858T DE 69327858 T DE69327858 T DE 69327858T DE 69327858 D1 DE69327858 D1 DE 69327858D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
test circuit
test
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69327858T
Other languages
English (en)
Other versions
DE69327858T2 (de
Inventor
Eiji Kozuka
Naokazu Miyawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69327858D1 publication Critical patent/DE69327858D1/de
Application granted granted Critical
Publication of DE69327858T2 publication Critical patent/DE69327858T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
DE69327858T 1992-05-06 1993-05-06 Halbleiterspeichergerät mit einer Prüfschaltung Expired - Lifetime DE69327858T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11375692A JP3251637B2 (ja) 1992-05-06 1992-05-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69327858D1 true DE69327858D1 (de) 2000-03-23
DE69327858T2 DE69327858T2 (de) 2000-07-06

Family

ID=14620346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327858T Expired - Lifetime DE69327858T2 (de) 1992-05-06 1993-05-06 Halbleiterspeichergerät mit einer Prüfschaltung

Country Status (5)

Country Link
US (1) US5381372A (de)
EP (1) EP0569014B1 (de)
JP (1) JP3251637B2 (de)
KR (1) KR950008458B1 (de)
DE (1) DE69327858T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69724318T2 (de) * 1996-04-02 2004-05-27 STMicroelectronics, Inc., Carrollton Prüfung und Reparatur einer eingebetteten Speicherschaltung
US6320803B1 (en) * 2000-03-23 2001-11-20 Infineon Technologies Ac Method and apparatus for improving the testing, yield and performance of very large scale integrated circuits
US6757209B2 (en) * 2001-03-30 2004-06-29 Intel Corporation Memory cell structural test
KR100437613B1 (ko) * 2001-10-23 2004-06-30 주식회사 하이닉스반도체 와이드 입/출력 디램 매크로용 집적 테스트 입/출력 장치
KR20040101660A (ko) * 2003-05-26 2004-12-03 삼성전자주식회사 테스트용 신호 패스를 가지는 출력 버퍼 회로 및 이에대한 테스트 방법
US7246280B2 (en) * 2004-03-23 2007-07-17 Samsung Electronics Co., Ltd. Memory module with parallel testing
JP4954954B2 (ja) * 2008-08-07 2012-06-20 パナソニック株式会社 半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541090A (en) * 1981-06-09 1985-09-10 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
JPS60115099A (ja) * 1983-11-25 1985-06-21 Fujitsu Ltd 半導体記憶装置
KR920001082B1 (ko) * 1989-06-13 1992-02-01 삼성전자 주식회사 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로
JP2717712B2 (ja) * 1989-08-18 1998-02-25 三菱電機株式会社 半導体記憶装置
JP2603145B2 (ja) * 1990-03-09 1997-04-23 三菱電機株式会社 半導体集積回路装置
JP2730375B2 (ja) * 1992-01-31 1998-03-25 日本電気株式会社 半導体メモリ

Also Published As

Publication number Publication date
EP0569014A2 (de) 1993-11-10
EP0569014A3 (en) 1997-04-09
US5381372A (en) 1995-01-10
DE69327858T2 (de) 2000-07-06
KR930024022A (ko) 1993-12-21
JP3251637B2 (ja) 2002-01-28
KR950008458B1 (ko) 1995-07-31
EP0569014B1 (de) 2000-02-16
JPH05312918A (ja) 1993-11-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition