DE69328234T2 - Einzeln adressierbare Halbleiterlaserdioden mit integrierten verlustarmen passiven Wellenleitern - Google Patents

Einzeln adressierbare Halbleiterlaserdioden mit integrierten verlustarmen passiven Wellenleitern

Info

Publication number
DE69328234T2
DE69328234T2 DE69328234T DE69328234T DE69328234T2 DE 69328234 T2 DE69328234 T2 DE 69328234T2 DE 69328234 T DE69328234 T DE 69328234T DE 69328234 T DE69328234 T DE 69328234T DE 69328234 T2 DE69328234 T2 DE 69328234T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser diodes
individually addressable
integrated low
passive waveguides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69328234T
Other languages
English (en)
Other versions
DE69328234D1 (de
Inventor
Thomas L Paoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69328234D1 publication Critical patent/DE69328234D1/de
Publication of DE69328234T2 publication Critical patent/DE69328234T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
DE69328234T 1992-12-14 1993-11-25 Einzeln adressierbare Halbleiterlaserdioden mit integrierten verlustarmen passiven Wellenleitern Expired - Lifetime DE69328234T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/990,135 US5287376A (en) 1992-12-14 1992-12-14 Independently addressable semiconductor diode lasers with integral lowloss passive waveguides

Publications (2)

Publication Number Publication Date
DE69328234D1 DE69328234D1 (de) 2000-05-04
DE69328234T2 true DE69328234T2 (de) 2000-07-27

Family

ID=25535805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328234T Expired - Lifetime DE69328234T2 (de) 1992-12-14 1993-11-25 Einzeln adressierbare Halbleiterlaserdioden mit integrierten verlustarmen passiven Wellenleitern

Country Status (4)

Country Link
US (1) US5287376A (de)
EP (1) EP0602811B1 (de)
JP (1) JPH06216365A (de)
DE (1) DE69328234T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261425A1 (de) * 2002-12-30 2004-07-22 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

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DE19605794A1 (de) * 1996-02-16 1997-08-21 Sel Alcatel Ag Monolithisch integriertes optisches oder optoelektronisches Halbleiterbauelement und Herstellungsverfahren
US5815628A (en) * 1996-04-17 1998-09-29 Nec Corporation Ordered semiconductor having periodical disorder and devices made therefrom
FR2768231B1 (fr) * 1997-09-08 1999-12-10 Alsthom Cge Alcatel Structure interferometrique integree
JP3662402B2 (ja) * 1997-11-07 2005-06-22 三菱電機株式会社 光半導体モジュール
JP3614746B2 (ja) * 2000-03-01 2005-01-26 松下電器産業株式会社 半導体レーザ装置および光ピックアップ装置
JP2002171023A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 集積化光素子及び半導体レーザモジュール並びに光送信機
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US20060029112A1 (en) * 2004-03-31 2006-02-09 Young Ian A Surface emitting laser with an integrated absorber
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US11552454B1 (en) 2017-09-28 2023-01-10 Apple Inc. Integrated laser source
CN113725725A (zh) * 2017-09-28 2021-11-30 苹果公司 使用量子阱混合技术的激光架构
US11156497B2 (en) 2017-09-29 2021-10-26 Apple Inc. Connected epitaxial optical sensing systems comprising a second epitaxial chip with a second light source and a second detector to detect light of a first light source
EP3688446A2 (de) 2017-09-29 2020-08-05 Apple Inc. Optische auflösungspfadabtastarchitekturen
US11226459B2 (en) 2018-02-13 2022-01-18 Apple Inc. Integrated photonics device having integrated edge outcouplers
US11644618B2 (en) 2018-06-22 2023-05-09 Apple Inc. Discrete optical unit on a substrate of an integrated photonics chip
US11525967B1 (en) 2018-09-28 2022-12-13 Apple Inc. Photonics integrated circuit architecture
US11171464B1 (en) 2018-12-14 2021-11-09 Apple Inc. Laser integration techniques
US11075503B2 (en) * 2019-07-02 2021-07-27 Microsoft Technology Licensing, Llc Integrated inter-cavity photodetector for laser power and threshold estimation
US11525958B1 (en) 2019-09-09 2022-12-13 Apple Inc. Off-cut wafer with a supported outcoupler
US11506535B1 (en) 2019-09-09 2022-11-22 Apple Inc. Diffraction grating design
US11231319B1 (en) 2019-09-09 2022-01-25 Apple Inc. Athermal wavelength stability monitor using a detraction grating
US11835836B1 (en) 2019-09-09 2023-12-05 Apple Inc. Mach-Zehnder interferometer device for wavelength locking
US11881678B1 (en) 2019-09-09 2024-01-23 Apple Inc. Photonics assembly with a photonics die stack
US11320718B1 (en) 2019-09-26 2022-05-03 Apple Inc. Cantilever beam waveguide for silicon photonics device
US11500154B1 (en) 2019-10-18 2022-11-15 Apple Inc. Asymmetric optical power splitting system and method
GB2590075A (en) * 2019-11-26 2021-06-23 Smart Photonics Holding B V Waveguide structure for a photonic integrated circuit
KR20230043191A (ko) 2020-09-09 2023-03-30 애플 인크. 노이즈 완화를 위한 광학 시스템
US11852865B2 (en) 2020-09-24 2023-12-26 Apple Inc. Optical system with phase shifting elements
US11561346B2 (en) 2020-09-24 2023-01-24 Apple Inc. Tunable echelle grating
US11815719B2 (en) 2020-09-25 2023-11-14 Apple Inc. Wavelength agile multiplexing
US11906778B2 (en) 2020-09-25 2024-02-20 Apple Inc. Achromatic light splitting device with a high V number and a low V number waveguide

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261425A1 (de) * 2002-12-30 2004-07-22 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

Also Published As

Publication number Publication date
EP0602811B1 (de) 2000-03-29
EP0602811A1 (de) 1994-06-22
JPH06216365A (ja) 1994-08-05
DE69328234D1 (de) 2000-05-04
US5287376A (en) 1994-02-15

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