DE69329376T2 - Verfahren zur Herstellung einer SOI-Transistor-DRAM - Google Patents

Verfahren zur Herstellung einer SOI-Transistor-DRAM

Info

Publication number
DE69329376T2
DE69329376T2 DE69329376T DE69329376T DE69329376T2 DE 69329376 T2 DE69329376 T2 DE 69329376T2 DE 69329376 T DE69329376 T DE 69329376T DE 69329376 T DE69329376 T DE 69329376T DE 69329376 T2 DE69329376 T2 DE 69329376T2
Authority
DE
Germany
Prior art keywords
making
soi transistor
transistor dram
dram
soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69329376T
Other languages
English (en)
Other versions
DE69329376D1 (de
Inventor
Kyucharn Park
Yeseung Lee
Cheonsu Ban
Kyungwook Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69329376D1 publication Critical patent/DE69329376D1/de
Publication of DE69329376T2 publication Critical patent/DE69329376T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
DE69329376T 1992-12-30 1993-12-23 Verfahren zur Herstellung einer SOI-Transistor-DRAM Expired - Fee Related DE69329376T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR920026778 1992-12-30

Publications (2)

Publication Number Publication Date
DE69329376D1 DE69329376D1 (de) 2000-10-12
DE69329376T2 true DE69329376T2 (de) 2001-01-04

Family

ID=19347910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329376T Expired - Fee Related DE69329376T2 (de) 1992-12-30 1993-12-23 Verfahren zur Herstellung einer SOI-Transistor-DRAM

Country Status (6)

Country Link
US (3) US5968840A (de)
EP (1) EP0606758B1 (de)
JP (1) JPH06232367A (de)
CN (1) CN1036227C (de)
DE (1) DE69329376T2 (de)
TW (1) TW278237B (de)

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US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
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US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
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CN102365628B (zh) 2009-03-31 2015-05-20 美光科技公司 用于提供半导体存储器装置的技术
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CN102812552B (zh) 2010-03-15 2015-11-25 美光科技公司 半导体存储器装置及用于对半导体存储器装置进行偏置的方法
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Also Published As

Publication number Publication date
US5631186A (en) 1997-05-20
US5939745A (en) 1999-08-17
EP0606758A1 (de) 1994-07-20
CN1036227C (zh) 1997-10-22
EP0606758B1 (de) 2000-09-06
TW278237B (de) 1996-06-11
DE69329376D1 (de) 2000-10-12
JPH06232367A (ja) 1994-08-19
CN1090672A (zh) 1994-08-10
US5968840A (en) 1999-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee