DE69331749T2 - Flacher bildschirm mit diodenstruktur - Google Patents

Flacher bildschirm mit diodenstruktur

Info

Publication number
DE69331749T2
DE69331749T2 DE69331749T DE69331749T DE69331749T2 DE 69331749 T2 DE69331749 T2 DE 69331749T2 DE 69331749 T DE69331749 T DE 69331749T DE 69331749 T DE69331749 T DE 69331749T DE 69331749 T2 DE69331749 T2 DE 69331749T2
Authority
DE
Germany
Prior art keywords
diode structure
flat screen
screen
flat
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331749T
Other languages
English (en)
Other versions
DE69331749D1 (de
Inventor
Nalin Kumar
Chenggang Xie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Nanotech Holdings Inc
Original Assignee
Applied Nanotech Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Nanotech Holdings Inc filed Critical Applied Nanotech Holdings Inc
Application granted granted Critical
Publication of DE69331749D1 publication Critical patent/DE69331749D1/de
Publication of DE69331749T2 publication Critical patent/DE69331749T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
    • H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
    • H01J29/085—Anode plates, e.g. for screens of flat panel displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/04—Electrodes; Screens; Shields
    • H01J61/06—Main electrodes
    • H01J61/067—Main electrodes for low-pressure discharge lamps
    • H01J61/0675—Main electrodes for low-pressure discharge lamps characterised by the material of the electrode
    • H01J61/0677—Main electrodes for low-pressure discharge lamps characterised by the material of the electrode characterised by the electron emissive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/06—Lamps with luminescent screen excited by the ray or stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/027—Manufacture of electrodes or electrode systems of cold cathodes of thin film cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/864—Spacing members characterised by the material
DE69331749T 1992-12-23 1993-12-06 Flacher bildschirm mit diodenstruktur Expired - Fee Related DE69331749T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/995,846 US5449970A (en) 1992-03-16 1992-12-23 Diode structure flat panel display
PCT/US1993/011796 WO1994015350A1 (en) 1992-12-23 1993-12-06 Diode structure flat panel display

Publications (2)

Publication Number Publication Date
DE69331749D1 DE69331749D1 (de) 2002-04-25
DE69331749T2 true DE69331749T2 (de) 2002-08-22

Family

ID=25542271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331749T Expired - Fee Related DE69331749T2 (de) 1992-12-23 1993-12-06 Flacher bildschirm mit diodenstruktur

Country Status (8)

Country Link
US (2) US5449970A (de)
EP (1) EP0676083B1 (de)
JP (1) JPH08506686A (de)
KR (1) KR100401281B1 (de)
AU (1) AU5740294A (de)
CA (1) CA2152471A1 (de)
DE (1) DE69331749T2 (de)
WO (1) WO1994015350A1 (de)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5600200A (en) 1992-03-16 1997-02-04 Microelectronics And Computer Technology Corporation Wire-mesh cathode
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5763997A (en) 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US9286294B2 (en) 1992-12-09 2016-03-15 Comcast Ip Holdings I, Llc Video and digital multimedia aggregator content suggestion engine
US7168084B1 (en) 1992-12-09 2007-01-23 Sedna Patent Services, Llc Method and apparatus for targeting virtual objects
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
US5445550A (en) * 1993-12-22 1995-08-29 Xie; Chenggang Lateral field emitter device and method of manufacturing same
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
DE4405768A1 (de) * 1994-02-23 1995-08-24 Till Keesmann Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung
KR0160321B1 (ko) * 1994-04-28 1998-12-01 박현승 평면가스표시관
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
US6204834B1 (en) * 1994-08-17 2001-03-20 Si Diamond Technology, Inc. System and method for achieving uniform screen brightness within a matrix display
US6246168B1 (en) * 1994-08-29 2001-06-12 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
US5712527A (en) * 1994-09-18 1998-01-27 International Business Machines Corporation Multi-chromic lateral field emission devices with associated displays and methods of fabrication
US5646702A (en) * 1994-10-31 1997-07-08 Honeywell Inc. Field emitter liquid crystal display
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
US5486126A (en) 1994-11-18 1996-01-23 Micron Display Technology, Inc. Spacers for large area displays
EP0740846B1 (de) * 1994-11-21 2003-04-16 Candescent Technologies Corporation Feldemissionsvorrichtung mit innerem struktur zum ausrichten von phosphor-pixeln auf entsprechenden feldemittern
JP2727995B2 (ja) * 1994-12-15 1998-03-18 双葉電子工業株式会社 支柱材整列用治具および支柱材整列用治具の製造方法
US5638085A (en) * 1995-01-13 1997-06-10 Micron Display Technology, Inc. Timing control for a matrixed scanned array
USRE38561E1 (en) * 1995-02-22 2004-08-03 Till Keesmann Field emission cathode
KR100366694B1 (ko) * 1995-03-28 2003-03-12 삼성에스디아이 주식회사 다중팁전계방출소자의그제조방법
KR100343214B1 (ko) * 1995-03-28 2002-11-13 삼성에스디아이 주식회사 전계방출소자의제조방법
FR2735265B1 (fr) * 1995-06-08 1997-08-22 Pixtech Sa Commutation d'une anode d'ecran plat de visualisation
CA2227510A1 (en) * 1995-08-14 1997-02-27 Dennis John Bechis Display panels using fibrous field emitters
TW368671B (en) * 1995-08-30 1999-09-01 Tektronix Inc Sputter-resistant, low-work-function, conductive coatings for cathode electrodes in DC plasma addressing structure
US5716251A (en) * 1995-09-15 1998-02-10 Micron Display Technology, Inc. Sacrificial spacers for large area displays
US5772488A (en) * 1995-10-16 1998-06-30 Micron Display Technology, Inc. Method of forming a doped field emitter array
KR100438137B1 (ko) * 1995-11-15 2004-07-16 이.아이,듀우판드네모아앤드캄파니 어니일링된탄소수트전장방출재및그로부터제조된전장방출캐쏘드
EP0861499B1 (de) * 1995-11-15 1999-10-27 E.I. Du Pont De Nemours And Company Verfahren zur herstellung einer feldemissionskathode mittels eines teilchenförmigen feldemissionsmaterial
KR100195501B1 (ko) * 1995-11-30 1999-06-15 김영남 레치형 전송기를 이용한 평판 표시기 데이타 구동 장치
GB9603582D0 (en) 1996-02-20 1996-04-17 Hewlett Packard Co Method of accessing service resource items that are for use in a telecommunications system
US6680489B1 (en) 1995-12-20 2004-01-20 Advanced Technology Materials, Inc. Amorphous silicon carbide thin film coating
US6031250A (en) 1995-12-20 2000-02-29 Advanced Technology Materials, Inc. Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
US5813893A (en) * 1995-12-29 1998-09-29 Sgs-Thomson Microelectronics, Inc. Field emission display fabrication method
US5916004A (en) * 1996-01-11 1999-06-29 Micron Technology, Inc. Photolithographically produced flat panel display surface plate support structure
US5705079A (en) * 1996-01-19 1998-01-06 Micron Display Technology, Inc. Method for forming spacers in flat panel displays using photo-etching
US5857882A (en) * 1996-02-27 1999-01-12 Sandia Corporation Processing of materials for uniform field emission
JP3134772B2 (ja) * 1996-04-16 2001-02-13 双葉電子工業株式会社 電界放出型表示素子およびその駆動方法
US5834891A (en) * 1996-06-18 1998-11-10 Ppg Industries, Inc. Spacers, spacer units, image display panels and methods for making and using the same
US5811926A (en) * 1996-06-18 1998-09-22 Ppg Industries, Inc. Spacer units, image display panels and methods for making and using the same
US5818166A (en) * 1996-07-03 1998-10-06 Si Diamond Technology, Inc. Field emission device with edge emitter and method for making
JP3694994B2 (ja) * 1996-07-16 2005-09-14 双葉電子工業株式会社 電界放出形表示装置
TW403928B (en) * 1996-08-16 2000-09-01 Tektronix Inc Sputter-resistant conductive coatings with enhanced emission of electrons for cathode electrodes in DC plasma addressing structure
US5821680A (en) * 1996-10-17 1998-10-13 Sandia Corporation Multi-layer carbon-based coatings for field emission
CN1234134A (zh) * 1996-10-17 1999-11-03 纳幕尔杜邦公司 纤维场致发射体的连接方法和用该方法制造的场致发射体阴极
JP3372848B2 (ja) * 1996-10-31 2003-02-04 キヤノン株式会社 電子放出素子及び画像表示装置及びそれらの製造方法
US5947783A (en) * 1996-11-01 1999-09-07 Si Diamond Technology, Inc. Method of forming a cathode assembly comprising a diamond layer
US5973452A (en) * 1996-11-01 1999-10-26 Si Diamond Technology, Inc. Display
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US5984746A (en) 1996-12-12 1999-11-16 Micron Technology, Inc. Attaching spacers in a display device
US5851133A (en) * 1996-12-24 1998-12-22 Micron Display Technology, Inc. FED spacer fibers grown by laser drive CVD
US5888112A (en) * 1996-12-31 1999-03-30 Micron Technology, Inc. Method for forming spacers on a display substrate
EP0866489A1 (de) * 1997-03-21 1998-09-23 Canon Kabushiki Kaisha Bilderzeugungsgerät
JP3199682B2 (ja) * 1997-03-21 2001-08-20 キヤノン株式会社 電子放出装置及びそれを用いた画像形成装置
WO1998043268A1 (en) 1997-03-25 1998-10-01 E.I. Du Pont De Nemours And Company Field emitter cathode backplate structures for display panels
WO1998044527A1 (en) 1997-04-02 1998-10-08 E.I. Du Pont De Nemours And Company Metal-oxygen-carbon field emitters
US6310432B1 (en) 1997-05-21 2001-10-30 Si Diamond Technology, Inc. Surface treatment process used in growing a carbon film
US6195135B1 (en) * 1997-11-13 2001-02-27 Peter J. Wilk Thin video display with superluminescent or laser diodes
EP1040503B1 (de) 1997-12-15 2002-05-08 E.I. Du Pont De Nemours And Company Elektronenemitter aus ionenbeschossenem graphit
EP1040502B1 (de) 1997-12-15 2005-03-23 The Regents of the University of California Ionenbeschussteter graphit-beschichteter draht-elektronenemitter
US6409567B1 (en) 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
AU3617699A (en) * 1998-04-22 1999-11-08 Cambridge Consultants Limited Electroluminescent devices
GB9813324D0 (en) * 1998-06-19 1998-08-19 Cambridge Display Tech Ltd Light-emissive devices
US6462467B1 (en) * 1999-08-11 2002-10-08 Sony Corporation Method for depositing a resistive material in a field emission cathode
JP3878365B2 (ja) * 1999-09-09 2007-02-07 株式会社日立製作所 画像表示装置および画像表示装置の製造方法
US6155900A (en) 1999-10-12 2000-12-05 Micron Technology, Inc. Fiber spacers in large area vacuum displays and method for manufacture
US6775267B1 (en) 1999-12-30 2004-08-10 At&T Corp Method for billing IP broadband subscribers
US6680935B1 (en) 1999-12-30 2004-01-20 At&T Corp. Anonymous call rejection
US7180889B1 (en) 1999-12-30 2007-02-20 At&T Corp. Personal control of address assignment and greeting options for multiple BRG ports
US6917610B1 (en) 1999-12-30 2005-07-12 At&T Corp. Activity log for improved call efficiency
US6690675B1 (en) 1999-12-30 2004-02-10 At&T Corp. User programmable fail-proof IP hotline/warm-line
US6775273B1 (en) 1999-12-30 2004-08-10 At&T Corp. Simplified IP service control
US6678265B1 (en) 1999-12-30 2004-01-13 At&T Corp. Local number portability database for on-net IP call
US6889321B1 (en) 1999-12-30 2005-05-03 At&T Corp. Protected IP telephony calls using encryption
US7075918B1 (en) 1999-12-30 2006-07-11 At&T Corp. BRG with PBX capabilities
US6728239B1 (en) 1999-12-30 2004-04-27 At&T Corp. Scaleable network server for low cost PBX
US6671262B1 (en) 1999-12-30 2003-12-30 At&T Corp. Conference server for automatic x-way call port expansion feature
US6816469B1 (en) 1999-12-30 2004-11-09 At&T Corp. IP conference call waiting
US6826173B1 (en) 1999-12-30 2004-11-30 At&T Corp. Enhanced subscriber IP alerting
US7120139B1 (en) 1999-12-30 2006-10-10 At&T Corp. Broadband cable telephony network architecture IP ITN network architecture reference model
US6937713B1 (en) 1999-12-30 2005-08-30 At&T Corp. IP call forward profile
US6633635B2 (en) 1999-12-30 2003-10-14 At&T Corp. Multiple call waiting in a packetized communication system
US6429596B1 (en) 1999-12-31 2002-08-06 Extreme Devices, Inc. Segmented gate drive for dynamic beam shape correction in field emission cathodes
US6716077B1 (en) * 2000-05-17 2004-04-06 Micron Technology, Inc. Method of forming flow-fill structures
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US7449081B2 (en) 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US7276844B2 (en) 2001-06-15 2007-10-02 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US7793326B2 (en) 2001-08-03 2010-09-07 Comcast Ip Holdings I, Llc Video and digital multimedia aggregator
US7908628B2 (en) 2001-08-03 2011-03-15 Comcast Ip Holdings I, Llc Video and digital multimedia aggregator content coding and formatting
US6589675B2 (en) * 2001-11-13 2003-07-08 Kuan-Chang Peng Organic electro-luminescence device
US20070052337A1 (en) * 2002-12-17 2007-03-08 Van Der Poel Willibrordus A J Display device
KR20050077539A (ko) * 2004-01-28 2005-08-03 삼성에스디아이 주식회사 액정 표시장치용 전계방출형 백라이트 유니트
JP4528926B2 (ja) * 2004-05-20 2010-08-25 高知県 電界放出型素子の駆動装置及びその駆動方法
US7940746B2 (en) 2004-08-24 2011-05-10 Comcast Cable Holdings, Llc Method and system for locating a voice over internet protocol (VoIP) device connected to a network
US7889163B2 (en) * 2004-08-27 2011-02-15 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US20080012461A1 (en) * 2004-11-09 2008-01-17 Nano-Proprietary, Inc. Carbon nanotube cold cathode
US20060205313A1 (en) * 2005-03-10 2006-09-14 Nano-Proprietary, Inc. Forming a grid structure for a field emission device
KR100624468B1 (ko) * 2005-05-24 2006-09-15 삼성에스디아이 주식회사 전계방출소자
US8000129B2 (en) * 2007-12-19 2011-08-16 Contour Semiconductor, Inc. Field-emitter-based memory array with phase-change storage devices
US8252165B2 (en) 2008-08-22 2012-08-28 E I Du Pont De Nemours And Company Method for the electrochemical deposition of carbon nanotubes
US8414757B2 (en) 2009-02-27 2013-04-09 E I Du Pont De Nemours And Company Process for improving the oxidation resistance of carbon nanotubes
US8238538B2 (en) 2009-05-28 2012-08-07 Comcast Cable Communications, Llc Stateful home phone service
WO2015023357A1 (en) * 2013-08-12 2015-02-19 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Chemically stable visible light photoemission electron source
EP3933881A1 (de) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG Röntgenquelle mit mehreren gittern

Family Cites Families (235)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1954691A (en) * 1930-09-27 1934-04-10 Philips Nv Process of making alpha layer containing alpha fluorescent material
US2851408A (en) * 1954-10-01 1958-09-09 Westinghouse Electric Corp Method of electrophoretic deposition of luminescent materials and product resulting therefrom
US2959483A (en) * 1955-09-06 1960-11-08 Zenith Radio Corp Color image reproducer and method of manufacture
US2867541A (en) * 1957-02-25 1959-01-06 Gen Electric Method of preparing transparent luminescent screens
US3070441A (en) * 1958-02-27 1962-12-25 Rca Corp Art of manufacturing cathode-ray tubes of the focus-mask variety
US3108904A (en) * 1960-08-30 1963-10-29 Gen Electric Method of preparing luminescent materials and luminescent screens prepared thereby
NL285235A (de) * 1961-11-08
US3360450A (en) * 1962-11-19 1967-12-26 American Optical Corp Method of making cathode ray tube face plates utilizing electrophoretic deposition
US3314871A (en) * 1962-12-20 1967-04-18 Columbia Broadcasting Syst Inc Method of cataphoretic deposition of luminescent materials
US3525679A (en) * 1964-05-05 1970-08-25 Westinghouse Electric Corp Method of electrodepositing luminescent material on insulating substrate
US3481733A (en) * 1966-04-18 1969-12-02 Sylvania Electric Prod Method of forming a cathodo-luminescent screen
US3554889A (en) * 1968-11-22 1971-01-12 Ibm Color cathode ray tube screens
US3675063A (en) * 1970-01-02 1972-07-04 Stanford Research Inst High current continuous dynode electron multiplier
US3789471A (en) * 1970-02-06 1974-02-05 Stanford Research Inst Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US3812559A (en) * 1970-07-13 1974-05-28 Stanford Research Inst Methods of producing field ionizer and field emission cathode structures
NL7018154A (de) * 1970-12-12 1972-06-14
JPS4889678A (de) * 1972-02-25 1973-11-22
JPS4911028A (de) * 1972-05-25 1974-01-31
JPS5325632B2 (de) * 1973-03-22 1978-07-27
US3898146A (en) * 1973-05-07 1975-08-05 Gte Sylvania Inc Process for fabricating a cathode ray tube screen structure
US3947716A (en) * 1973-08-27 1976-03-30 The United States Of America As Represented By The Secretary Of The Army Field emission tip and process for making same
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
JPS5436828B2 (de) * 1974-08-16 1979-11-12
US4075535A (en) * 1975-04-15 1978-02-21 Battelle Memorial Institute Flat cathodic tube display
CA1083266A (en) * 1975-06-27 1980-08-05 Hitachi, Ltd. Field emission cathode and method for preparation thereof
US4084942A (en) * 1975-08-27 1978-04-18 Villalobos Humberto Fernandez Ultrasharp diamond edges and points and method of making
US4164680A (en) * 1975-08-27 1979-08-14 Villalobos Humberto F Polycrystalline diamond emitter
US4168213A (en) * 1976-04-29 1979-09-18 U.S. Philips Corporation Field emission device and method of forming same
US4178531A (en) * 1977-06-15 1979-12-11 Rca Corporation CRT with field-emission cathode
US4141405A (en) * 1977-07-27 1979-02-27 Sri International Method of fabricating a funnel-shaped miniature electrode for use as a field ionization source
US4139773A (en) * 1977-11-04 1979-02-13 Oregon Graduate Center Method and apparatus for producing bright high resolution ion beams
SE411003B (sv) * 1978-04-13 1979-11-19 Soredal Sven Gunnar Emitter for feltemission, samt sett att framstella emittern
US4350926A (en) * 1980-07-28 1982-09-21 The United States Of America As Represented By The Secretary Of The Army Hollow beam electron source
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
US4507562A (en) * 1980-10-17 1985-03-26 Jean Gasiot Methods for rapidly stimulating luminescent phosphors and recovering information therefrom
DE3103293A1 (de) * 1981-01-31 1982-08-26 Standard Elektrik Lorenz Ag, 7000 Stuttgart Vakuumfluorezenzanzeigematrix und verfahren zu ihrem betrieb
JPS57162692U (de) * 1981-04-03 1982-10-13
DE3235724A1 (de) * 1981-10-02 1983-04-21 Futaba Denshi Kogyo K.K., Mobara, Chiba Leuchtstoff-anzeigevorrichtung
US4728851A (en) * 1982-01-08 1988-03-01 Ford Motor Company Field emitter device with gated memory
US4578614A (en) * 1982-07-23 1986-03-25 The United States Of America As Represented By The Secretary Of The Navy Ultra-fast field emitter array vacuum integrated circuit switching device
JPS6010120B2 (ja) * 1982-09-14 1985-03-15 ソニー株式会社 粉体の非水溶液系電着法
US4663559A (en) * 1982-09-17 1987-05-05 Christensen Alton O Field emission device
US4498952A (en) * 1982-09-17 1985-02-12 Condesin, Inc. Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns
US4513308A (en) * 1982-09-23 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy p-n Junction controlled field emitter array cathode
DE3243596C2 (de) * 1982-11-25 1985-09-26 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren und Vorrichtung zur Übertragung von Bildern auf einen Bildschirm
DE3319526C2 (de) * 1983-05-28 1994-10-20 Max Planck Gesellschaft Anordnung mit einem physikalischen Sensor
FR2547828B1 (fr) * 1983-06-23 1985-11-22 Centre Nat Rech Scient Materiau luminescent comportant une matrice solide a l'interieur de laquelle est reparti un compose fluorescent, son procede de preparation et son utilisation dans une photopile
CA1266297A (en) * 1983-07-30 1990-02-27 Hideaki Nakagawa Luminescent display cell
JPS6038490A (ja) * 1983-08-11 1985-02-28 Toshiba Corp 白色発光混合螢光体及びこれを用いた陰極線管
JPS6074231A (ja) * 1983-09-30 1985-04-26 Hitachi Ltd 陰極線管の製造方法
US4594527A (en) * 1983-10-06 1986-06-10 Xerox Corporation Vacuum fluorescent lamp having a flat geometry
US4816717A (en) * 1984-02-06 1989-03-28 Rogers Corporation Electroluminescent lamp having a polymer phosphor layer formed in substantially a non-crossed linked state
FR2561019B1 (fr) * 1984-03-09 1987-07-17 Etude Surfaces Lab Procede de realisation d'ecrans de visualisation plats et ecrans plats obtenus par la mise en oeuvre dudit procede
JPS60207229A (ja) * 1984-03-30 1985-10-18 Toshiba Corp 陰極線管螢光面の形成方法
JPS6110827A (ja) * 1984-06-27 1986-01-18 Matsushita Electronics Corp 陰極線管螢光体膜の形成方法
FR2568394B1 (fr) * 1984-07-27 1988-02-12 Commissariat Energie Atomique Dispositif de visualisation par cathodoluminescence excitee par emission de champ
US4633131A (en) * 1984-12-12 1986-12-30 North American Philips Corporation Halo-reducing faceplate arrangement
US4788472A (en) * 1984-12-13 1988-11-29 Nec Corporation Fluoroescent display panel having indirectly-heated cathode
JPS61142645A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 正，負兼用イオン源
US4684353A (en) * 1985-08-19 1987-08-04 Dunmore Corporation Flexible electroluminescent film laminate
JPS6247050U (de) * 1985-09-10 1987-03-23
US5124558A (en) 1985-10-10 1992-06-23 Quantex Corporation Imaging system for mamography employing electron trapping materials
US5166456A (en) 1985-12-16 1992-11-24 Kasei Optonix, Ltd. Luminescent phosphor composition
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
US4684540A (en) * 1986-01-31 1987-08-04 Gte Products Corporation Coated pigmented phosphors and process for producing same
US4857799A (en) * 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
US5015912A (en) * 1986-07-30 1991-05-14 Sri International Matrix-addressed flat panel display
GB8621600D0 (en) * 1986-09-08 1987-03-18 Gen Electric Co Plc Vacuum devices
US4685996A (en) * 1986-10-14 1987-08-11 Busta Heinz H Method of making micromachined refractory metal field emitters
FR2607623B1 (fr) * 1986-11-27 1995-02-17 Commissariat Energie Atomique Source d'electrons polarises de spin, utilisant une cathode emissive a micropointes, application en physique des interactions electrons-matiere ou electrons-particules, physique des plasmas, microscopie electronique
FR2608842B1 (fr) * 1986-12-22 1989-03-03 Commissariat Energie Atomique Transducteur photo-electronique utilisant une cathode emissive a micropointes
US4900584A (en) * 1987-01-12 1990-02-13 Planar Systems, Inc. Rapid thermal annealing of TFEL panels
US4851254A (en) * 1987-01-13 1989-07-25 Nippon Soken, Inc. Method and device for forming diamond film
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
FR2615644B1 (fr) 1987-05-18 1989-06-30 Brunel Christian Dispositif d'affichage electroluminescent a effet memoire et a demi-teintes
US4822466A (en) * 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
US5066883A (en) 1987-07-15 1991-11-19 Canon Kabushiki Kaisha Electron-emitting device with electron-emitting region insulated from electrodes
US4818914A (en) * 1987-07-17 1989-04-04 Sri International High efficiency lamp
JPH063715B2 (ja) * 1987-10-02 1994-01-12 双葉電子工業株式会社 蛍光表示管
US4855636A (en) * 1987-10-08 1989-08-08 Busta Heinz H Micromachined cold cathode vacuum tube device and method of making
US4780684A (en) * 1987-10-22 1988-10-25 Hughes Aircraft Company Microwave integrated distributed amplifier with field emission triodes
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
JPH0693164B2 (ja) * 1987-12-01 1994-11-16 双葉電子工業株式会社 表示装置
US5123039A (en) 1988-01-06 1992-06-16 Jupiter Toy Company Energy conversion using high charge density
DE3817897A1 (de) * 1988-01-06 1989-07-20 Jupiter Toy Co Die erzeugung und handhabung von ladungsgebilden hoher ladungsdichte
US5054046A (en) * 1988-01-06 1991-10-01 Jupiter Toy Company Method of and apparatus for production and manipulation of high density charge
US5153901A (en) 1988-01-06 1992-10-06 Jupiter Toy Company Production and manipulation of charged particles
US5148461A (en) 1988-01-06 1992-09-15 Jupiter Toy Co. Circuits responsive to and controlling charged particles
US5089812A (en) 1988-02-26 1992-02-18 Casio Computer Co., Ltd. Liquid-crystal display
JPH02503728A (ja) 1988-03-25 1990-11-01 トムソン‐セーエスエフ 電界放出形ソースの製造方法及びエミッタアレイの製造へのその応用
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US5098737A (en) 1988-04-18 1992-03-24 Board Of Regents The University Of Texas System Amorphic diamond material produced by laser plasma deposition
US4874981A (en) * 1988-05-10 1989-10-17 Sri International Automatically focusing field emission electrode
US5285129A (en) 1988-05-31 1994-02-08 Canon Kabushiki Kaisha Segmented electron emission device
US4926056A (en) * 1988-06-10 1990-05-15 Sri International Microelectronic field ionizer and method of fabricating the same
FR2633765B1 (fr) * 1988-06-29 1991-09-06 Commissariat Energie Atomique Ecran fluorescent a micropointes ayant un nombre reduit de circuits d'adressage et procede d'adressage de cet ecran
US4923421A (en) * 1988-07-06 1990-05-08 Innovative Display Development Partners Method for providing polyimide spacers in a field emission panel display
US5063327A (en) * 1988-07-06 1991-11-05 Coloray Display Corporation Field emission cathode based flat panel display having polyimide spacers
US5185178A (en) 1988-08-29 1993-02-09 Minnesota Mining And Manufacturing Company Method of forming an array of densely packed discrete metal microspheres
US5043715A (en) * 1988-12-07 1991-08-27 Westinghouse Electric Corp. Thin film electroluminescent edge emitter structure with optical lens and multi-color light emission systems
FR2637126B1 (fr) * 1988-09-23 1992-05-07 Thomson Csf Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
FR2637407B1 (fr) 1988-09-30 1994-02-11 Commissariat A Energie Atomique Procede d'affichage de niveaux de gris sur un ecran a cristaux liquides ferroelectriques a phase smectique chirale
US4956573A (en) * 1988-12-19 1990-09-11 Babcock Display Products, Inc. Gas discharge display device with integral, co-planar, built-in heater
US4882659A (en) * 1988-12-21 1989-11-21 Delco Electronics Corporation Vacuum fluorescent display having integral backlit graphic patterns
US4956202A (en) * 1988-12-22 1990-09-11 Gte Products Corporation Firing and milling method for producing a manganese activated zinc silicate phosphor
US4892757A (en) * 1988-12-22 1990-01-09 Gte Products Corporation Method for a producing manganese activated zinc silicate phosphor
ATE156648T1 (de) 1988-12-27 1997-08-15 Canon Kk Durch elektrisches feld lichtemittierende vorrichtung
JP2548352B2 (ja) 1989-01-17 1996-10-30 松下電器産業株式会社 発光素子およびその製造方法
US5008657A (en) * 1989-01-31 1991-04-16 Varo, Inc. Self adjusting matrix display
US4994205A (en) * 1989-02-03 1991-02-19 Eastman Kodak Company Composition containing a hafnia phosphor of enhanced luminescence
US5142390A (en) 1989-02-23 1992-08-25 Ricoh Company, Ltd. MIM element with a doped hard carbon film
US5101288A (en) 1989-04-06 1992-03-31 Ricoh Company, Ltd. LCD having obliquely split or interdigitated pixels connected to MIM elements having a diamond-like insulator
US5153753A (en) 1989-04-12 1992-10-06 Ricoh Company, Ltd. Active matrix-type liquid crystal display containing a horizontal MIM device with inter-digital conductors
JP2799875B2 (ja) 1989-05-20 1998-09-21 株式会社リコー 液晶表示装置
US4990766A (en) * 1989-05-22 1991-02-05 Murasa International Solid state electron amplifier
JP2757207B2 (ja) 1989-05-24 1998-05-25 株式会社リコー 液晶表示装置
US4990416A (en) * 1989-06-19 1991-02-05 Coloray Display Corporation Deposition of cathodoluminescent materials by reversal toning
US5101137A (en) 1989-07-10 1992-03-31 Westinghouse Electric Corp. Integrated tfel flat panel face and edge emitter structure producing multiple light sources
US4943343A (en) * 1989-08-14 1990-07-24 Zaher Bardai Self-aligned gate process for fabricating field emitter arrays
KR910008017B1 (ko) 1989-08-30 1991-10-05 삼성전관 주식회사 칼라음극선관용 패널 세정방법
EP0420188A1 (de) 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Halbleitende Heteroübergangsstruktur
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters
US5055077A (en) * 1989-11-22 1991-10-08 Motorola, Inc. Cold cathode field emission device having an electrode in an encapsulating layer
US5214416A (en) 1989-12-01 1993-05-25 Ricoh Company, Ltd. Active matrix board
US5229682A (en) 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device
US5412285A (en) 1990-12-06 1995-05-02 Seiko Epson Corporation Linear amplifier incorporating a field emission device having specific gap distances between gate and cathode
US5228878A (en) 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device production method
EP0434001B1 (de) * 1989-12-19 1996-04-03 Matsushita Electric Industrial Co., Ltd. Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
US5038070A (en) * 1989-12-26 1991-08-06 Hughes Aircraft Company Field emitter structure and fabrication process
US5064396A (en) 1990-01-29 1991-11-12 Coloray Display Corporation Method of manufacturing an electric field producing structure including a field emission cathode
US5235244A (en) 1990-01-29 1993-08-10 Innovative Display Development Partners Automatically collimating electron beam producing arrangement
US4964946A (en) * 1990-02-02 1990-10-23 The United States Of America As Represented By The Secretary Of The Navy Process for fabricating self-aligned field emitter arrays
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
US5079476A (en) 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5142184B1 (en) 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
US5192240A (en) 1990-02-22 1993-03-09 Seiko Epson Corporation Method of manufacturing a microelectronic vacuum device
US5214346A (en) 1990-02-22 1993-05-25 Seiko Epson Corporation Microelectronic vacuum field emission device
JP2720607B2 (ja) 1990-03-02 1998-03-04 株式会社日立製作所 表示装置、階調表示方法及び駆動回路
JP2820491B2 (ja) 1990-03-30 1998-11-05 松下電子工業株式会社 気体放電型表示装置
US5126287A (en) 1990-06-07 1992-06-30 Mcnc Self-aligned electron emitter fabrication method and devices formed thereby
US5266155A (en) 1990-06-08 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for making a symmetrical layered thin film edge field-emitter-array
US5214347A (en) 1990-06-08 1993-05-25 The United States Of America As Represented By The Secretary Of The Navy Layered thin-edged field-emitter device
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
US5156770A (en) 1990-06-26 1992-10-20 Thomson Consumer Electronics, Inc. Conductive contact patch for a CRT faceplate panel
US5231606A (en) 1990-07-02 1993-07-27 The United States Of America As Represented By The Secretary Of The Navy Field emitter array memory device
US5202571A (en) 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
US5204581A (en) 1990-07-12 1993-04-20 Bell Communications Research, Inc. Device including a tapered microminiature silicon structure
US5201992A (en) 1990-07-12 1993-04-13 Bell Communications Research, Inc. Method for making tapered microminiature silicon structures
US5075591A (en) * 1990-07-13 1991-12-24 Coloray Display Corporation Matrix addressing arrangement for a flat panel display with field emission cathodes
US5063323A (en) * 1990-07-16 1991-11-05 Hughes Aircraft Company Field emitter structure providing passageways for venting of outgassed materials from active electronic area
US5141459A (en) 1990-07-18 1992-08-25 International Business Machines Corporation Structures and processes for fabricating field emission cathodes
US5203731A (en) 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
US5089292A (en) 1990-07-20 1992-02-18 Coloray Display Corporation Field emission cathode array coated with electron work function reducing material, and method
US5276521A (en) 1990-07-30 1994-01-04 Olympus Optical Co., Ltd. Solid state imaging device having a constant pixel integrating period and blooming resistance
US5148078A (en) 1990-08-29 1992-09-15 Motorola, Inc. Field emission device employing a concentric post
US5103145A (en) * 1990-09-05 1992-04-07 Raytheon Company Luminance control for cathode-ray tube having field emission cathode
US5157309A (en) 1990-09-13 1992-10-20 Motorola Inc. Cold-cathode field emission device employing a current source means
US5150192A (en) 1990-09-27 1992-09-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array
US5057047A (en) 1990-09-27 1991-10-15 The United States Of America As Represented By The Secretary Of The Navy Low capacitance field emitter array and method of manufacture therefor
US5136764A (en) 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
US5089742A (en) * 1990-09-28 1992-02-18 The United States Of America As Represented By The Secretary Of The Navy Electron beam source formed with biologically derived tubule materials
US5103144A (en) * 1990-10-01 1992-04-07 Raytheon Company Brightness control for flat panel display
US5075596A (en) 1990-10-02 1991-12-24 United Technologies Corporation Electroluminescent display brightness compensation
US5183529A (en) 1990-10-29 1993-02-02 Ford Motor Company Fabrication of polycrystalline free-standing diamond films
US5281890A (en) 1990-10-30 1994-01-25 Motorola, Inc. Field emission device having a central anode
US5173634A (en) 1990-11-30 1992-12-22 Motorola, Inc. Current regulated field-emission device
US5173635A (en) 1990-11-30 1992-12-22 Motorola, Inc. Bi-directional field emission device
US5157304A (en) 1990-12-17 1992-10-20 Motorola, Inc. Field emission device display with vacuum seal
US5132585A (en) 1990-12-21 1992-07-21 Motorola, Inc. Projection display faceplate employing an optically transmissive diamond coating of high thermal conductivity
JPH04221990A (ja) 1990-12-25 1992-08-12 Sony Corp 画像表示装置
US5209687A (en) 1990-12-28 1993-05-11 Sony Corporation Flat panel display apparatus and a method of manufacturing thereof
DE69130920T2 (de) 1990-12-28 1999-09-16 Sony Corp Flache Anzeigeeinrichtung
US5212426A (en) 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5075595A (en) 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
GB9101723D0 (en) 1991-01-25 1991-03-06 Marconi Gec Ltd Field emission devices
JP2626276B2 (ja) 1991-02-06 1997-07-02 双葉電子工業株式会社 電子放出素子
US5312514A (en) 1991-11-07 1994-05-17 Microelectronics And Computer Technology Corporation Method of making a field emitter device using randomly located nuclei as an etch mask
US5281891A (en) 1991-02-22 1994-01-25 Matsushita Electric Industrial Co., Ltd. Electron emission element
US5347201A (en) 1991-02-25 1994-09-13 Panocorp Display Systems Display device
US5140219A (en) 1991-02-28 1992-08-18 Motorola, Inc. Field emission display device employing an integral planar field emission control device
GB2254486B (en) 1991-03-06 1995-01-18 Sony Corp Flat image-display apparatus
US5142256A (en) 1991-04-04 1992-08-25 Motorola, Inc. Pin diode with field emission device switch
US5220725A (en) 1991-04-09 1993-06-22 Northeastern University Micro-emitter-based low-contact-force interconnection device
FR2675947A1 (fr) 1991-04-23 1992-10-30 France Telecom Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive.
US5144191A (en) 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
US5233263A (en) 1991-06-27 1993-08-03 International Business Machines Corporation Lateral field emission devices
US5155420A (en) 1991-08-05 1992-10-13 Smith Robert T Switching circuits employing field emission devices
US5227699A (en) 1991-08-16 1993-07-13 Amoco Corporation Recessed gate field emission
US5138237A (en) 1991-08-20 1992-08-11 Motorola, Inc. Field emission electron device employing a modulatable diamond semiconductor emitter
US5129850A (en) 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
US5262698A (en) 1991-10-31 1993-11-16 Raytheon Company Compensation for field emission display irregularities
US5199918A (en) 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5399238A (en) 1991-11-07 1995-03-21 Microelectronics And Computer Technology Corporation Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
US5191217A (en) 1991-11-25 1993-03-02 Motorola, Inc. Method and apparatus for field emission device electrostatic electron beam focussing
US5124072A (en) 1991-12-02 1992-06-23 General Electric Company Alkaline earth hafnate phosphor with cerium luminescence
US5199917A (en) 1991-12-09 1993-04-06 Cornell Research Foundation, Inc. Silicon tip field emission cathode arrays and fabrication thereof
DE69214780T2 (de) 1991-12-11 1997-05-15 Agfa Gevaert Nv Methode zur Herstellung eines radiographischen Schirmes
US5204021A (en) 1992-01-03 1993-04-20 General Electric Company Lanthanide oxide fluoride phosphor having cerium luminescence
US5252833A (en) 1992-02-05 1993-10-12 Motorola, Inc. Electron source for depletion mode electron emission apparatus
US5180951A (en) * 1992-02-05 1993-01-19 Motorola, Inc. Electron device electron source including a polycrystalline diamond
US5173697A (en) 1992-02-05 1992-12-22 Motorola, Inc. Digital-to-analog signal conversion device employing scaled field emission devices
US5213712A (en) 1992-02-10 1993-05-25 General Electric Company Lanthanum lutetium oxide phosphor with cerium luminescence
US5229331A (en) 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
US5151061A (en) 1992-02-21 1992-09-29 Micron Technology, Inc. Method to form self-aligned tips for flat panel displays
US5186670A (en) 1992-03-02 1993-02-16 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
US5259799A (en) 1992-03-02 1993-11-09 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
US5205770A (en) 1992-03-12 1993-04-27 Micron Technology, Inc. Method to form high aspect ratio supports (spacers) for field emission display using micro-saw technology
JP2661457B2 (ja) 1992-03-31 1997-10-08 双葉電子工業株式会社 電界放出形カソード
US5315393A (en) 1992-04-01 1994-05-24 Amoco Corporation Robust pixel array scanning with image signal isolation
US5410218A (en) 1993-06-15 1995-04-25 Micron Display Technology, Inc. Active matrix field emission display having peripheral regulation of tip current
US5357172A (en) 1992-04-07 1994-10-18 Micron Technology, Inc. Current-regulated field emission cathodes for use in a flat panel display in which low-voltage row and column address signals control a much higher pixel activation voltage
US5232549A (en) 1992-04-14 1993-08-03 Micron Technology, Inc. Spacers for field emission display fabricated via self-aligned high energy ablation
KR950004516B1 (ko) 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
US5256888A (en) 1992-05-04 1993-10-26 Motorola, Inc. Transistor device apparatus employing free-space electron emission from a diamond material surface
US5329207A (en) 1992-05-13 1994-07-12 Micron Technology, Inc. Field emission structures produced on macro-grain polysilicon substrates
KR0129678B1 (en) 1992-05-22 1998-04-06 Futaba Denshi Kogyo Kk Fluorescent display device
US5283500A (en) 1992-05-28 1994-02-01 At&T Bell Laboratories Flat panel field emission display apparatus
US5278475A (en) 1992-06-01 1994-01-11 Motorola, Inc. Cathodoluminescent display apparatus and method for realization using diamond crystallites
US5300862A (en) 1992-06-11 1994-04-05 Motorola, Inc. Row activating method for fed cathodoluminescent display assembly
US5242620A (en) 1992-07-02 1993-09-07 General Electric Company Gadolinium lutetium aluminate phosphor with cerium luminescence
US5330879A (en) 1992-07-16 1994-07-19 Micron Technology, Inc. Method for fabrication of close-tolerance lines and sharp emission tips on a semiconductor wafer
US5312777A (en) 1992-09-25 1994-05-17 International Business Machines Corporation Fabrication methods for bidirectional field emission devices and storage structures
US5236545A (en) 1992-10-05 1993-08-17 The Board Of Governors Of Wayne State University Method for heteroepitaxial diamond film development
US5347292A (en) 1992-10-28 1994-09-13 Panocorp Display Systems Super high resolution cold cathode fluorescent display
KR960009127B1 (en) 1993-01-06 1996-07-13 Samsung Display Devices Co Ltd Silicon field emission emitter and the manufacturing method
US5380546A (en) 1993-06-09 1995-01-10 Microelectronics And Computer Technology Corporation Multilevel metallization process for electronic components
US5368681A (en) 1993-06-09 1994-11-29 Hong Kong University Of Science Method for the deposition of diamond on a substrate
US5387844A (en) 1993-06-15 1995-02-07 Micron Display Technology, Inc. Flat panel display drive circuit with switched drive current
US5396150A (en) 1993-07-01 1995-03-07 Industrial Technology Research Institute Single tip redundancy method and resulting flat panel display
US5302423A (en) 1993-07-09 1994-04-12 Minnesota Mining And Manufacturing Company Method for fabricating pixelized phosphors
US5393647A (en) 1993-07-16 1995-02-28 Armand P. Neukermans Method of making superhard tips for micro-probe microscopy and field emission
US5404070A (en) 1993-10-04 1995-04-04 Industrial Technology Research Institute Low capacitance field emission display by gate-cathode dielectric

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JPH08506686A (ja) 1996-07-16
DE69331749D1 (de) 2002-04-25
US5449970A (en) 1995-09-12
EP0676083A1 (de) 1995-10-11
KR100401281B1 (ko) 2003-12-31
WO1994015350A1 (en) 1994-07-07
KR960700516A (ko) 1996-01-20
CA2152471A1 (en) 1994-07-07
AU5740294A (en) 1994-07-19
EP0676083A4 (de) 1996-12-27
EP0676083B1 (de) 2002-03-20
US5612712A (en) 1997-03-18

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