DE69332303D1 - Gleichrichtende Übertragungstorschaltung - Google Patents

Gleichrichtende Übertragungstorschaltung

Info

Publication number
DE69332303D1
DE69332303D1 DE69332303T DE69332303T DE69332303D1 DE 69332303 D1 DE69332303 D1 DE 69332303D1 DE 69332303 T DE69332303 T DE 69332303T DE 69332303 T DE69332303 T DE 69332303T DE 69332303 D1 DE69332303 D1 DE 69332303D1
Authority
DE
Germany
Prior art keywords
transmission gate
rectifying transmission
rectifying
gate
transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69332303T
Other languages
English (en)
Other versions
DE69332303T2 (de
Inventor
Takashi Nakashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69332303D1 publication Critical patent/DE69332303D1/de
Application granted granted Critical
Publication of DE69332303T2 publication Critical patent/DE69332303T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/50Adding; Subtracting
    • G06F7/501Half or full adders, i.e. basic adder cells for one denomination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H03K19/21EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical
    • H03K19/215EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical using field-effect transistors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2207/00Indexing scheme relating to methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F2207/38Indexing scheme relating to groups G06F7/38 - G06F7/575
    • G06F2207/3804Details
    • G06F2207/386Special constructional features
    • G06F2207/3876Alternation of true and inverted stages
DE69332303T 1992-12-31 1993-12-30 Gleichrichtende Übertragungstorschaltung Expired - Lifetime DE69332303T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920027123A KR950006352B1 (ko) 1992-12-31 1992-12-31 정류성 전송 게이트와 그 응용회로

Publications (2)

Publication Number Publication Date
DE69332303D1 true DE69332303D1 (de) 2002-10-24
DE69332303T2 DE69332303T2 (de) 2003-05-22

Family

ID=19348259

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69332303T Expired - Lifetime DE69332303T2 (de) 1992-12-31 1993-12-30 Gleichrichtende Übertragungstorschaltung
DE69333429T Expired - Lifetime DE69333429T2 (de) 1992-12-31 1993-12-30 Gleichrichtene Transfergateschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69333429T Expired - Lifetime DE69333429T2 (de) 1992-12-31 1993-12-30 Gleichrichtene Transfergateschaltung

Country Status (8)

Country Link
US (4) US5604429A (de)
EP (2) EP0605253B1 (de)
JP (1) JPH06244700A (de)
KR (1) KR950006352B1 (de)
CN (1) CN1048596C (de)
DE (2) DE69332303T2 (de)
PT (1) PT909033E (de)
TW (1) TW240353B (de)

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KR950006352B1 (ko) * 1992-12-31 1995-06-14 삼성전자주식회사 정류성 전송 게이트와 그 응용회로
US5923981A (en) * 1996-12-31 1999-07-13 Intel Corporation Cascading transistor gate and method for fabricating the same
DE19808525A1 (de) * 1998-02-27 1999-09-02 Siemens Ag Integrierte Schaltung
US6075271A (en) * 1998-03-03 2000-06-13 Motorola, Inc. Semiconductor device inhibiting parasitic effects during electrostatic discharge
JP3080063B2 (ja) * 1998-04-06 2000-08-21 日本電気株式会社 インバータ回路
JP2000078841A (ja) * 1998-08-28 2000-03-14 Nec Corp Dc/dcコンバータの整流回路
US6275401B1 (en) 2000-01-10 2001-08-14 Power-One, Inc. Self-driven synchronous rectification circuit for low output voltage DC-DC converters
US6382976B1 (en) 2001-02-05 2002-05-07 Sulzer Dental Inc. Dental implant having round bottom with fluid directing channels
US7403100B2 (en) * 2003-05-02 2008-07-22 Volvo Lastvagnar Ab Detection of trailer presence and type by means of current detection
US7148660B2 (en) * 2004-09-30 2006-12-12 General Electric Company System and method for power conversion using semiconductor switches having reverse voltage withstand capability
JP4587788B2 (ja) 2004-11-24 2010-11-24 ルネサスエレクトロニクス株式会社 論理回路
US8274265B1 (en) 2007-02-28 2012-09-25 Netlogic Microsystems, Inc. Multi-phase power system with redundancy
US7808223B1 (en) * 2007-05-08 2010-10-05 Netlogic Microsystems, Inc. Transistor with spatially integrated schottky diode
US9559170B2 (en) * 2012-03-01 2017-01-31 X-Fab Semiconductor Foundries Ag Electrostatic discharge protection devices
US10233578B2 (en) 2016-03-17 2019-03-19 Card-Monroe Corp. Tufting machine and method of tufting
CN108631623B (zh) * 2017-03-26 2021-05-18 南京博兰得电子科技有限公司 一种组合开关

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US3746893A (en) * 1969-03-17 1973-07-17 Honeywell Inc Field effect transistor impedance coupling network whose output voltage equals the input voltage
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3879640A (en) * 1974-02-11 1975-04-22 Rca Corp Protective diode network for MOS devices
US4253162A (en) * 1979-08-28 1981-02-24 Rca Corporation Blocked source node field-effect circuitry
JPS56101694A (en) * 1980-01-18 1981-08-14 Nec Corp Semiconductor circuit
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
JPS5819794A (ja) * 1981-07-29 1983-02-04 Fujitsu Ltd 半導体メモリ
FR2528596A1 (fr) * 1982-06-09 1983-12-16 Labo Cent Telecommunicat Cellule d'addition binaire a trois entrees a propagation rapide de la somme, realisee en circuit integre
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
DE3441306A1 (de) * 1984-11-12 1986-05-15 Siemens AG, 1000 Berlin und 8000 München Logikschaltung fuer die invertierte exklusiv-oder-funktion in galliumarsenid-technik
US4713559A (en) * 1985-04-29 1987-12-15 Honeywell Inc. Multiple input and multiple output or/and circuit
JPH0760854B2 (ja) * 1985-08-30 1995-06-28 株式会社日立製作所 一方向導通形スイツチング回路
JPS62222491A (ja) * 1986-03-24 1987-09-30 Nec Corp センスアンプ
US4710649A (en) * 1986-04-11 1987-12-01 Raytheon Company Transmission-gate structured logic circuits
JP2724146B2 (ja) * 1987-05-29 1998-03-09 日産自動車株式会社 縦形mosfet
US4749887A (en) * 1987-06-22 1988-06-07 Ncr Corporation 3-input Exclusive-OR gate circuit
JPH07120937B2 (ja) * 1988-11-08 1995-12-20 日本電気株式会社 インバータ回路
JPH03158018A (ja) * 1989-11-15 1991-07-08 Nec Corp 入力回路
JP2507164B2 (ja) * 1990-10-04 1996-06-12 三菱電機株式会社 半導体記憶装置
KR950006352B1 (ko) * 1992-12-31 1995-06-14 삼성전자주식회사 정류성 전송 게이트와 그 응용회로

Also Published As

Publication number Publication date
JPH06244700A (ja) 1994-09-02
EP0605253A2 (de) 1994-07-06
KR940017202A (ko) 1994-07-26
CN1090102A (zh) 1994-07-27
EP0909033B1 (de) 2004-02-25
EP0605253B1 (de) 2002-09-18
DE69332303T2 (de) 2003-05-22
US5604429A (en) 1997-02-18
TW240353B (de) 1995-02-11
EP0909033A3 (de) 1999-10-20
CN1048596C (zh) 2000-01-19
DE69333429D1 (de) 2004-04-01
US5682054A (en) 1997-10-28
PT909033E (pt) 2004-06-30
EP0605253A3 (de) 1995-03-01
US5935203A (en) 1999-08-10
EP0909033A2 (de) 1999-04-14
US5822235A (en) 1998-10-13
DE69333429T2 (de) 2004-11-11
KR950006352B1 (ko) 1995-06-14

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Legal Events

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