DE69332335D1 - Über silizium epitaktische aufgewachsene dünne kubische metalloxydschicht - Google Patents
Über silizium epitaktische aufgewachsene dünne kubische metalloxydschichtInfo
- Publication number
- DE69332335D1 DE69332335D1 DE69332335T DE69332335T DE69332335D1 DE 69332335 D1 DE69332335 D1 DE 69332335D1 DE 69332335 T DE69332335 T DE 69332335T DE 69332335 T DE69332335 T DE 69332335T DE 69332335 D1 DE69332335 D1 DE 69332335D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- epitactic
- metal oxide
- oxide layer
- layer over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/10513—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/10516—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/925,350 US5270298A (en) | 1992-03-05 | 1992-08-04 | Cubic metal oxide thin film epitaxially grown on silicon |
PCT/US1993/001582 WO1993018531A1 (en) | 1992-03-05 | 1993-02-23 | Crystallographically aligned ferroelectric films usable in memories and method of making |
PCT/US1993/006551 WO1994003908A1 (en) | 1992-03-05 | 1993-07-13 | Cubic metal oxide thin film epitaxially grown on silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69332335D1 true DE69332335D1 (de) | 2002-10-31 |
DE69332335T2 DE69332335T2 (de) | 2003-05-22 |
Family
ID=25451602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332335T Expired - Fee Related DE69332335T2 (de) | 1992-08-04 | 1993-07-13 | Über silizium epitaktische aufgewachsene dünne kubische metalloxydschicht |
Country Status (6)
Country | Link |
---|---|
US (1) | US5270298A (de) |
EP (1) | EP0654169B1 (de) |
JP (1) | JP2819067B2 (de) |
CA (1) | CA2141566A1 (de) |
DE (1) | DE69332335T2 (de) |
WO (1) | WO1994003908A1 (de) |
Families Citing this family (103)
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JP3205976B2 (ja) * | 1992-09-14 | 2001-09-04 | 住友電気工業株式会社 | 表面弾性波素子 |
US5387459A (en) * | 1992-12-17 | 1995-02-07 | Eastman Kodak Company | Multilayer structure having an epitaxial metal electrode |
JPH06196648A (ja) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | 配向性強誘電体薄膜素子 |
JP3163606B2 (ja) * | 1993-01-29 | 2001-05-08 | 住友電気工業株式会社 | 表面弾性波素子 |
US5409548A (en) * | 1993-05-17 | 1995-04-25 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric detector array utilizing material and fabrication technique |
DE4323821A1 (de) * | 1993-07-15 | 1995-01-19 | Siemens Ag | Pyrodetektorelement mit orientiert aufgewachsener pyroelektrischer Schicht und Verfahren zu seiner Herstellung |
MXPA94009540A (es) * | 1993-07-30 | 2005-04-29 | Martin Marietta Energy Systems | Procedimiento para hacer crecer una pelicula epitaxialmente sobre una superficie de oxido, y las estructuras formadas con el procedimiento. |
US5470668A (en) * | 1994-03-31 | 1995-11-28 | The Regents Of The University Of Calif. | Metal oxide films on metal |
US5478653A (en) * | 1994-04-04 | 1995-12-26 | Guenzer; Charles S. | Bismuth titanate as a template layer for growth of crystallographically oriented silicon |
US5589284A (en) * | 1994-08-01 | 1996-12-31 | Texas Instruments Incorporated | Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics |
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US5572060A (en) * | 1995-02-01 | 1996-11-05 | Southern Methodist University | Uncooled YBaCuO thin film infrared detector |
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KR101338158B1 (ko) * | 2007-07-16 | 2013-12-06 | 삼성전자주식회사 | 비휘발성 기억 소자 및 그 형성 방법 |
FR2993705B1 (fr) * | 2012-07-20 | 2015-05-29 | Thales Sa | Dispositif comportant une pluralite de couches minces |
JP2019212793A (ja) * | 2018-06-06 | 2019-12-12 | ソニー株式会社 | 強誘電記憶装置 |
KR20210149161A (ko) | 2019-04-08 | 2021-12-08 | 케플러 컴퓨팅 인크. | 도핑된 극성 층 및 이를 포함하는 반도체 장치 |
EP4097518A1 (de) | 2020-01-29 | 2022-12-07 | Psiquantum Corp. | Fotonischer phasenschieber mit niedrigem verlust und hohem wirkungsgrad |
CA3170572A1 (en) | 2020-03-03 | 2021-09-10 | Psiquantum, Corp. | Fabrication method for photonic devices |
EP4036639A1 (de) * | 2021-02-02 | 2022-08-03 | IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | Verfahren zur herstellung eines elektrooptischen phasenschiebers auf basis von ferroelektrischen materialien |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0763101B2 (ja) * | 1985-02-04 | 1995-07-05 | 株式会社日立製作所 | 圧電変換器およびその製造方法 |
US5077270A (en) * | 1987-03-26 | 1991-12-31 | Matsushita Electric Industrial Co., Ltd. | Elements comprising a film of a perovskite compound whose crystallographic axes are oriented and a method of making such elements |
US4980339A (en) * | 1987-07-29 | 1990-12-25 | Matsushita Electric Industrial Co., Ltd. | Superconductor structure |
US5051950A (en) * | 1989-07-31 | 1991-09-24 | Radiant Technologies | Read/write optical memory |
US5055445A (en) * | 1989-09-25 | 1991-10-08 | Litton Systems, Inc. | Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy |
US5130294A (en) * | 1990-08-13 | 1992-07-14 | Kookrin Char | High temperature superconductor-calcium titanate structures |
US5128316A (en) * | 1990-06-04 | 1992-07-07 | Eastman Kodak Company | Articles containing a cubic perovskite crystal structure |
EP0471292B1 (de) * | 1990-08-08 | 1999-11-24 | Sumitomo Electric Industries, Limited | Substrat für supraleitende Einrichtungen |
US5142437A (en) * | 1991-06-13 | 1992-08-25 | Ramtron Corporation | Conducting electrode layers for ferroelectric capacitors in integrated circuits and method |
-
1992
- 1992-08-04 US US07/925,350 patent/US5270298A/en not_active Expired - Fee Related
-
1993
- 1993-07-13 JP JP6505316D patent/JP2819067B2/ja not_active Expired - Fee Related
- 1993-07-13 WO PCT/US1993/006551 patent/WO1994003908A1/en active IP Right Grant
- 1993-07-13 DE DE69332335T patent/DE69332335T2/de not_active Expired - Fee Related
- 1993-07-13 EP EP93917126A patent/EP0654169B1/de not_active Expired - Lifetime
- 1993-07-13 CA CA002141566A patent/CA2141566A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP0654169B1 (de) | 2002-09-25 |
EP0654169A4 (de) | 1997-05-02 |
WO1994003908A1 (en) | 1994-02-17 |
JP2819067B2 (ja) | 1998-10-30 |
CA2141566A1 (en) | 1994-02-17 |
DE69332335T2 (de) | 2003-05-22 |
US5270298A (en) | 1993-12-14 |
EP0654169A1 (de) | 1995-05-24 |
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