DE69400107D1 - Im tiefen UV absorbierende Zusammensetzung und dessen Einsatz in der Herstellung von Mustern - Google Patents

Im tiefen UV absorbierende Zusammensetzung und dessen Einsatz in der Herstellung von Mustern

Info

Publication number
DE69400107D1
DE69400107D1 DE69400107T DE69400107T DE69400107D1 DE 69400107 D1 DE69400107 D1 DE 69400107D1 DE 69400107 T DE69400107 T DE 69400107T DE 69400107 T DE69400107 T DE 69400107T DE 69400107 D1 DE69400107 D1 DE 69400107D1
Authority
DE
Germany
Prior art keywords
deep
patterns
production
absorbing composition
absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69400107T
Other languages
English (en)
Other versions
DE69400107T2 (de
Inventor
Fumiyoshi Urano
Keiji Oono
Hiroshi Matsuda
Masayuki Endo
Satoshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Fujifilm Wako Pure Chemical Corp
Original Assignee
Wako Pure Chemical Industries Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chemical Industries Ltd, Matsushita Electric Industrial Co Ltd filed Critical Wako Pure Chemical Industries Ltd
Publication of DE69400107D1 publication Critical patent/DE69400107D1/de
Application granted granted Critical
Publication of DE69400107T2 publication Critical patent/DE69400107T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • C07C309/75—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
DE69400107T 1993-07-20 1994-07-13 Im tiefen UV absorbierende Zusammensetzung und dessen Einsatz in der Herstellung von Mustern Expired - Fee Related DE69400107T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20041793 1993-07-20
JP8777094 1994-04-01

Publications (2)

Publication Number Publication Date
DE69400107D1 true DE69400107D1 (de) 1996-04-25
DE69400107T2 DE69400107T2 (de) 1996-12-12

Family

ID=26429022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69400107T Expired - Fee Related DE69400107T2 (de) 1993-07-20 1994-07-13 Im tiefen UV absorbierende Zusammensetzung und dessen Einsatz in der Herstellung von Mustern

Country Status (4)

Country Link
US (2) US5576359A (de)
EP (1) EP0636941B1 (de)
KR (1) KR100256096B1 (de)
DE (1) DE69400107T2 (de)

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US6383712B1 (en) 1998-06-05 2002-05-07 International Business Machines Corporation Polymer-bound sensitizer
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US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
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US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
US6686124B1 (en) * 2000-03-14 2004-02-03 International Business Machines Corporation Multifunctional polymeric materials and use thereof
KR100687851B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721182B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
TW576949B (en) * 2000-08-17 2004-02-21 Shipley Co Llc Antireflective coatings with increased etch rates
CN1606713B (zh) 2001-11-15 2011-07-06 霍尼韦尔国际公司 用于照相平版印刷术的旋涂抗反射涂料
US7309560B2 (en) * 2002-02-19 2007-12-18 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating
US7008476B2 (en) 2003-06-11 2006-03-07 Az Electronic Materials Usa Corp. Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US20070259457A1 (en) * 2006-05-04 2007-11-08 Texas Instruments Optical endpoint detection of planarization
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US7566527B2 (en) * 2007-06-27 2009-07-28 International Business Machines Corporation Fused aromatic structures and methods for photolithographic applications
KR100894218B1 (ko) * 2008-04-11 2009-04-22 금호석유화학 주식회사 흡광제 및 이를 포함하는 유기 반사 방지막 조성물
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5548494B2 (ja) * 2010-03-19 2014-07-16 東京応化工業株式会社 表面改質材料、レジストパターン形成方法及びパターン形成方法
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
EP3194502A4 (de) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen
TWI662370B (zh) 2015-11-30 2019-06-11 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用之塗料組合物
US11112696B2 (en) * 2016-09-16 2021-09-07 Nissan Chemical Corporation Protective film-forming composition
JP6853716B2 (ja) 2017-03-31 2021-03-31 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
KR101981294B1 (ko) 2017-10-31 2019-05-23 삼성디스플레이 주식회사 광 흡수제 및 이를 포함하는 유기 전계 발광 소자
CN109721482B (zh) * 2017-10-31 2023-07-18 三星显示有限公司 光吸收剂和包括该光吸收剂的有机电致发光器件

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US4413052A (en) * 1981-02-04 1983-11-01 Ciba-Geigy Corporation Photopolymerization process employing compounds containing acryloyl group and anthryl group
US4822718A (en) * 1982-09-30 1989-04-18 Brewer Science, Inc. Light absorbing coating
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JPH05222153A (ja) * 1992-02-12 1993-08-31 Nippon Steel Chem Co Ltd 新規アントラセン系エポキシ樹脂及びその製造方法

Also Published As

Publication number Publication date
EP0636941A1 (de) 1995-02-01
KR950004378A (ko) 1995-02-17
US5576359A (en) 1996-11-19
DE69400107T2 (de) 1996-12-12
US5677112A (en) 1997-10-14
KR100256096B1 (ko) 2000-06-01
EP0636941B1 (de) 1996-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

Owner name: WAKO PURE CHEMICAL INDUSTRIES, LTD., OSAKA, JP

8339 Ceased/non-payment of the annual fee