DE69404597T2 - Gasphasenabscheidungen mittels Ionenextraction aus einem Plasma - Google Patents

Gasphasenabscheidungen mittels Ionenextraction aus einem Plasma

Info

Publication number
DE69404597T2
DE69404597T2 DE69404597T DE69404597T DE69404597T2 DE 69404597 T2 DE69404597 T2 DE 69404597T2 DE 69404597 T DE69404597 T DE 69404597T DE 69404597 T DE69404597 T DE 69404597T DE 69404597 T2 DE69404597 T2 DE 69404597T2
Authority
DE
Germany
Prior art keywords
plasma
vapor deposition
ion extraction
extraction
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404597T
Other languages
English (en)
Other versions
DE69404597D1 (de
Inventor
John C Helmer
Kwok Fai Lai
Robert L Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Novellus Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of DE69404597D1 publication Critical patent/DE69404597D1/de
Application granted granted Critical
Publication of DE69404597T2 publication Critical patent/DE69404597T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
DE69404597T 1993-10-08 1994-10-07 Gasphasenabscheidungen mittels Ionenextraction aus einem Plasma Expired - Fee Related DE69404597T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/133,595 US5482611A (en) 1991-09-30 1993-10-08 Physical vapor deposition employing ion extraction from a plasma

Publications (2)

Publication Number Publication Date
DE69404597D1 DE69404597D1 (de) 1997-09-04
DE69404597T2 true DE69404597T2 (de) 1997-11-27

Family

ID=22459384

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404597T Expired - Fee Related DE69404597T2 (de) 1993-10-08 1994-10-07 Gasphasenabscheidungen mittels Ionenextraction aus einem Plasma

Country Status (6)

Country Link
US (1) US5482611A (de)
EP (1) EP0647962B1 (de)
JP (1) JP3611132B2 (de)
KR (1) KR100302818B1 (de)
DE (1) DE69404597T2 (de)
TW (1) TW301839B (de)

Families Citing this family (153)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705042A (en) * 1996-01-29 1998-01-06 Micron Technology, Inc. Electrically isolated collimator and method
US5985102A (en) * 1996-01-29 1999-11-16 Micron Technology, Inc. Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
DE19609248A1 (de) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
JPH09228038A (ja) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh 中空のターゲットを備えた、陰極スパッタによりサブストレートを被覆するための装置
DE19609249A1 (de) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
US5725739A (en) * 1996-07-08 1998-03-10 Micron Technology, Inc. Low angle, low energy physical vapor deposition of alloys
US5783282A (en) 1996-10-07 1998-07-21 Micron Technology, Inc. Resputtering to achieve better step coverage of contact holes
DE19722056A1 (de) * 1997-05-27 1998-12-03 Roland Dr Gesche Verfahren und Anordnung zum Herstellen dünner Schichten mittels Niederdruck-Gasentladung in einer Hohlkathode
DE19744060C2 (de) * 1997-10-06 1999-08-12 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur Oberflächenbehandlung von Substraten
IL127236A0 (en) 1997-11-26 1999-09-22 Vapor Technologies Inc Apparatus for sputtering or arc evaporation
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
WO2000032347A1 (en) 1998-12-03 2000-06-08 Tosoh Smd, Inc. Insert target assembly and method of making same
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
US6179973B1 (en) 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6497796B1 (en) 1999-01-05 2002-12-24 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US5997705A (en) * 1999-04-14 1999-12-07 Vapor Technologies, Inc. Rectangular filtered arc plasma source
US6500321B1 (en) 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6610184B2 (en) * 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6251242B1 (en) * 2000-01-21 2001-06-26 Applied Materials, Inc. Magnetron and target producing an extended plasma region in a sputter reactor
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
US6451177B1 (en) 2000-01-21 2002-09-17 Applied Materials, Inc. Vault shaped target and magnetron operable in two sputtering modes
US6444100B1 (en) 2000-02-11 2002-09-03 Seagate Technology Llc Hollow cathode sputter source
US6342133B2 (en) 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
DE60126779T2 (de) * 2000-03-24 2007-12-13 Cymbet Corp., Elk River Herstellung bei niedriger temperatur von dünnschicht- energiespeichervorrichtungen
US6406599B1 (en) * 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target
US6964792B1 (en) 2000-11-03 2005-11-15 Novellus Systems, Inc. Methods and apparatus for controlling electrolyte flow for uniform plating
AU2002235146A1 (en) * 2000-11-30 2002-06-11 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US6471831B2 (en) 2001-01-09 2002-10-29 Novellus Systems, Inc. Apparatus and method for improving film uniformity in a physical vapor deposition system
US6607977B1 (en) 2001-03-13 2003-08-19 Novellus Systems, Inc. Method of depositing a diffusion barrier for copper interconnect applications
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US6642146B1 (en) 2001-03-13 2003-11-04 Novellus Systems, Inc. Method of depositing copper seed on semiconductor substrates
ES2240723T3 (es) * 2001-04-06 2005-10-16 Sherwood Services Ag Bisagra aislante moldeada para instrumentos bipolares.
US6551487B1 (en) 2001-05-31 2003-04-22 Novellus Systems, Inc. Methods and apparatus for controlled-angle wafer immersion
US6800187B1 (en) 2001-05-31 2004-10-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating wafers
WO2002104085A2 (en) * 2001-06-19 2002-12-27 Toky0 Electron Limited A closed-drift hall effect plasma vacuum pump for process reactors
US6613199B1 (en) 2001-10-25 2003-09-02 Novellus Systems, Inc. Apparatus and method for physical vapor deposition using an open top hollow cathode magnetron
US7041201B2 (en) * 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
US6755946B1 (en) 2001-11-30 2004-06-29 Novellus Systems, Inc. Clamshell apparatus with dynamic uniformity control
US7033465B1 (en) 2001-11-30 2006-04-25 Novellus Systems, Inc. Clamshell apparatus with crystal shielding and in-situ rinse-dry
US6683425B1 (en) 2002-02-05 2004-01-27 Novellus Systems, Inc. Null-field magnetron apparatus with essentially flat target
US20040055883A1 (en) * 2002-03-02 2004-03-25 Shinzo Onishi Magnetron sputtering target for non-magnetic materials
US6623610B1 (en) 2002-03-02 2003-09-23 Shinzo Onishi Magnetron sputtering target for magnetic materials
US6765216B2 (en) * 2002-03-04 2004-07-20 Atomic Hydrogen Technologies Ltd. Method and apparatus for producing atomic flows of molecular gases
US6743342B2 (en) * 2002-03-12 2004-06-01 Applied Materials, Inc. Sputtering target with a partially enclosed vault
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6830664B2 (en) * 2002-08-05 2004-12-14 Tegal Corporation Cluster tool with a hollow cathode array
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
JP5160730B2 (ja) * 2002-09-19 2013-03-13 ジェネラル・プラズマ・インコーポレーテッド ビーム状プラズマ源
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US7603144B2 (en) * 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US6906436B2 (en) * 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US20040131760A1 (en) * 2003-01-02 2004-07-08 Stuart Shakespeare Apparatus and method for depositing material onto multiple independently moving substrates in a chamber
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US8298933B2 (en) * 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7038389B2 (en) * 2003-05-02 2006-05-02 Applied Process Technologies, Inc. Magnetron plasma source
US6929720B2 (en) * 2003-06-09 2005-08-16 Tokyo Electron Limited Sputtering source for ionized physical vapor deposition of metals
JP4468302B2 (ja) * 2003-09-12 2010-05-26 日鉱金属株式会社 スパッタリングターゲット及び同ターゲットの表面仕上げ方法
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
US7179351B1 (en) 2003-12-15 2007-02-20 Novellus Systems, Inc. Methods and apparatus for magnetron sputtering
JP2007518246A (ja) * 2004-01-06 2007-07-05 シンベット コーポーレーション 境界を有する１若しくはそれ以上の層を備える層状のバリア構造及び該バリア構造の製造方法
AT501143B1 (de) * 2004-05-14 2006-11-15 Hueck Folien Gmbh Sputterkathode zum einsatz im hochvakuum
US7569123B1 (en) 2004-05-25 2009-08-04 Novellus Systems, Inc. Optimizing target erosion using multiple erosion regions in a magnetron sputtering apparatus
US7776478B2 (en) * 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
CA2615479A1 (en) * 2005-07-15 2007-01-25 Cymbet Corporation Thin-film batteries with polymer and lipon electrolyte layers and methods
US20070012244A1 (en) * 2005-07-15 2007-01-18 Cymbet Corporation Apparatus and method for making thin-film batteries with soft and hard electrolyte layers
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7678248B2 (en) * 2006-08-09 2010-03-16 Atomic Energy Council Circulated cooled target
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
FR2912864B1 (fr) * 2007-02-15 2009-07-31 H E F Soc Par Actions Simplifi Dispositif pour generer un plasma froid dans une enceinte sous vide et utilisation du dispositif pour des traitements thermochimiques
US20080285106A1 (en) * 2007-05-18 2008-11-20 Nikon Corporation Apparatus and Method For Nanoradian Metrology of Changes In Angular Orientation of A Vibrating Mirror Using Multi-Pass Optical Systems
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US9194036B2 (en) * 2007-09-06 2015-11-24 Infineon Technologies Ag Plasma vapor deposition
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US7985325B2 (en) * 2007-10-30 2011-07-26 Novellus Systems, Inc. Closed contact electroplating cup assembly
US7935231B2 (en) * 2007-10-31 2011-05-03 Novellus Systems, Inc. Rapidly cleanable electroplating cup assembly
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
WO2009157438A1 (ja) * 2008-06-26 2009-12-30 株式会社アルバック カソードユニット及びこのカソードユニットを備えたスパッタリング装置
US20100018857A1 (en) * 2008-07-23 2010-01-28 Seagate Technology Llc Sputter cathode apparatus allowing thick magnetic targets
US11225727B2 (en) 2008-11-07 2022-01-18 Lam Research Corporation Control of current density in an electroplating apparatus
US10011917B2 (en) 2008-11-07 2018-07-03 Lam Research Corporation Control of current density in an electroplating apparatus
US8172992B2 (en) * 2008-12-10 2012-05-08 Novellus Systems, Inc. Wafer electroplating apparatus for reducing edge defects
US9512538B2 (en) 2008-12-10 2016-12-06 Novellus Systems, Inc. Plating cup with contoured cup bottom
KR101593544B1 (ko) 2008-12-15 2016-02-15 가부시키가이샤 알박 스퍼터링 장치 및 스퍼터링 방법
US8475637B2 (en) * 2008-12-17 2013-07-02 Novellus Systems, Inc. Electroplating apparatus with vented electrolyte manifold
WO2010132069A1 (en) 2009-05-15 2010-11-18 Alpha Source Llc Particle beam isotope generator apparatus, system, and method
US20100320081A1 (en) * 2009-06-17 2010-12-23 Mayer Steven T Apparatus for wetting pretreatment for enhanced damascene metal filling
US9455139B2 (en) 2009-06-17 2016-09-27 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US9677188B2 (en) 2009-06-17 2017-06-13 Novellus Systems, Inc. Electrofill vacuum plating cell
US9138784B1 (en) 2009-12-18 2015-09-22 Novellus Systems, Inc. Deionized water conditioning system and methods
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US9224416B2 (en) 2012-04-24 2015-12-29 Seagate Technology Llc Near field transducers including nitride materials
US9251837B2 (en) 2012-04-25 2016-02-02 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US9385035B2 (en) 2010-05-24 2016-07-05 Novellus Systems, Inc. Current ramping and current pulsing entry of substrates for electroplating
DE102010030608B4 (de) * 2010-06-28 2012-04-05 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur plasmagestützten Bearbeitung von Substraten
CN103459658B (zh) * 2011-01-13 2015-09-23 明尼苏达大学董事会 纳米颗粒沉积系统
US9028666B2 (en) 2011-05-17 2015-05-12 Novellus Systems, Inc. Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US10658705B2 (en) 2018-03-07 2020-05-19 Space Charge, LLC Thin-film solid-state energy storage devices
US9221081B1 (en) 2011-08-01 2015-12-29 Novellus Systems, Inc. Automated cleaning of wafer plating assembly
US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
US10066311B2 (en) 2011-08-15 2018-09-04 Lam Research Corporation Multi-contact lipseals and associated electroplating methods
US9228270B2 (en) 2011-08-15 2016-01-05 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
WO2013148890A1 (en) 2012-03-28 2013-10-03 Novellus Systems, Inc. Methods and apparatuses for cleaning electroplating substrate holders
TWI609100B (zh) 2012-03-30 2017-12-21 諾發系統有限公司 使用反向電流除鍍以清洗電鍍基板夾持具
GB201210994D0 (en) * 2012-06-21 2012-08-01 Univ Surrey Ion accelerators
RU2636389C2 (ru) * 2013-02-06 2017-11-23 Арселормитталь Инвестигасион И Десаррольо Сл Источник плазмы
US10416092B2 (en) 2013-02-15 2019-09-17 Lam Research Corporation Remote detection of plating on wafer holding apparatus
US9746427B2 (en) 2013-02-15 2017-08-29 Novellus Systems, Inc. Detection of plating on wafer holding apparatus
EP2956258A1 (de) 2013-02-15 2015-12-23 Regents of the University of Minnesota Teilchenfunktionalisierung
US9613833B2 (en) 2013-02-20 2017-04-04 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
US8830800B1 (en) 2013-06-21 2014-09-09 Seagate Technology Llc Magnetic devices including film structures
US9058824B2 (en) 2013-06-24 2015-06-16 Seagate Technology Llc Devices including a gas barrier layer
US9502070B2 (en) 2013-06-24 2016-11-22 Seagate Technology Llc Materials for near field transducers, near field tranducers containing same, and methods of forming
US9245573B2 (en) 2013-06-24 2016-01-26 Seagate Technology Llc Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
KR101672245B1 (ko) 2013-06-24 2016-11-03 시게이트 테크놀로지 엘엘씨 적어도 하나의 인터믹싱층을 포함하는 디바이스들
US9435049B2 (en) 2013-11-20 2016-09-06 Lam Research Corporation Alkaline pretreatment for electroplating
US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
DE102014105414A1 (de) 2014-04-16 2015-11-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen eines Plasmas
US9305572B2 (en) 2014-05-01 2016-04-05 Seagate Technology Llc Methods of forming portions of near field transducers (NFTS) and articles formed thereby
US9620150B2 (en) 2014-11-11 2017-04-11 Seagate Technology Llc Devices including an amorphous gas barrier layer
US9552833B2 (en) 2014-11-11 2017-01-24 Seagate Technology Llc Devices including a multilayer gas barrier layer
US9822444B2 (en) 2014-11-11 2017-11-21 Seagate Technology Llc Near-field transducer having secondary atom higher concentration at bottom of the peg
US10510364B2 (en) 2014-11-12 2019-12-17 Seagate Technology Llc Devices including a near field transducer (NFT) with nanoparticles
US9481942B2 (en) 2015-02-03 2016-11-01 Lam Research Corporation Geometry and process optimization for ultra-high RPM plating
KR101652041B1 (ko) 2015-02-06 2016-08-29 유옥수 마찰계수 감소와 내경 보강용 디씨 이중벽 하수관
US9617648B2 (en) 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
US20160275972A1 (en) 2015-03-22 2016-09-22 Seagate Technology Llc Devices including metal layer
US9824709B2 (en) 2015-05-28 2017-11-21 Seagate Technology Llc Near field transducers (NFTS) including barrier layer and methods of forming
US9672848B2 (en) 2015-05-28 2017-06-06 Seagate Technology Llc Multipiece near field transducers (NFTS)
US10840105B2 (en) * 2015-06-15 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure with insulating structure and method for manufacturing the same
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US9852748B1 (en) 2015-12-08 2017-12-26 Seagate Technology Llc Devices including a NFT having at least one amorphous alloy layer
US10957519B2 (en) 2015-12-21 2021-03-23 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US9951414B2 (en) * 2015-12-21 2018-04-24 IonQuest LLC Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3369990A (en) * 1964-12-31 1968-02-20 Ibm Cathodic sputtering apparatus including thermionic means for increasing sputtering efficiency
US3962988A (en) * 1973-03-05 1976-06-15 Yoichi Murayama, Nippon Electric Varian Ltd. Ion-plating apparatus having an h.f. electrode for providing an h.f. glow discharge region
US4039416A (en) * 1975-04-21 1977-08-02 White Gerald W Gasless ion plating
US4046660A (en) * 1975-12-29 1977-09-06 Bell Telephone Laboratories, Incorporated Sputter coating with charged particle flux control
US4655893A (en) * 1983-02-07 1987-04-07 Battelle Development Corporation Cubic boron nitride preparation utilizing a boron and nitrogen bearing gas
US4420386A (en) * 1983-04-22 1983-12-13 White Engineering Corporation Method for pure ion plating using magnetic fields
JPS6046368A (ja) * 1983-08-23 1985-03-13 Showa Denko Kk スパツタリングタ−ゲツト
CH659484A5 (de) * 1984-04-19 1987-01-30 Balzers Hochvakuum Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
DE3566194D1 (en) * 1984-08-31 1988-12-15 Hitachi Ltd Microwave assisting sputtering
JPS6188511A (ja) * 1984-10-05 1986-05-06 Nec Kansai Ltd 磁性体薄膜製作方法
JPH0697660B2 (ja) * 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
US4588490A (en) * 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
DE3527626A1 (de) * 1985-08-01 1987-02-05 Leybold Heraeus Gmbh & Co Kg Zerstaeubungskatode nach dem magnetronprinzip
EP0283519B1 (de) * 1986-09-29 1994-04-13 Nippon Telegraph And Telephone Corporation Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle
JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
JPS6396283A (ja) * 1986-10-11 1988-04-27 Nippon Telegr & Teleph Corp <Ntt> イオン源
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
US4915805A (en) * 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
DE3844064A1 (de) * 1988-12-28 1990-07-05 Leybold Ag Katodenzerstaeubungsvorrichtung nach dem magnetron-prinzip mit einer hohlkatode und einem zylindrischen target
US5178743A (en) * 1989-06-15 1993-01-12 Microelectronics And Computer Technology Corporation Cylindrical magnetron sputtering system
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JP2634339B2 (ja) * 1991-10-11 1997-07-23 アプライド マテリアルズ インコーポレイテッド スパッタ装置
JP3069180B2 (ja) * 1991-11-15 2000-07-24 東京エレクトロン株式会社 中空形状マグネトロンスパッタ電極
JPH062125A (ja) * 1992-06-16 1994-01-11 Fujitsu Ltd 半導体製造装置
JP3094050B2 (ja) * 1992-12-09 2000-10-03 東京エレクトロン株式会社 マグネトロンスパッタリング装置及びスパッタリングガン

Also Published As

Publication number Publication date
JPH07183219A (ja) 1995-07-21
EP0647962A1 (de) 1995-04-12
TW301839B (de) 1997-04-01
EP0647962B1 (de) 1997-07-30
KR950012581A (ko) 1995-05-16
JP3611132B2 (ja) 2005-01-19
DE69404597D1 (de) 1997-09-04
KR100302818B1 (ko) 2001-12-01
US5482611A (en) 1996-01-09

Similar Documents

Publication Publication Date Title
DE69404597T2 (de) Gasphasenabscheidungen mittels Ionenextraction aus einem Plasma
GB9414646D0 (en) Quadrupole ion trap
GB2264808B (en) Plasma mass spectrometer
DE69617134T2 (de) Vorrichtungen zum Aufdampfen oder Ätzen
DE69205494T2 (de) Beschichtungssystem zur plasmachemischen Gasphasenabscheidung.
DE69304503T2 (de) Diamantähnliche Kohlenstoffilme hergestellt aus einem Kohlenwasserstoff-Helium-Plasma
GB2267385A8 (en) Ion trap mass spectrometer method
DE69209706T2 (de) Oberflächenmodifizierung mittels beschleunigten Plasmas oder Ionen
ITMI911256A1 (it) Deposizione per spruzzo a plasma a radiofrequenza bassa
GB9613691D0 (en) Ion trap mass spectrometer with vacuum-external ion generation
DE68921286T2 (de) Anlage zur plasmachemischen Gasphasenabscheidung.
DE69322058T2 (de) Plasma-Ätzverfahren
GB9105073D0 (en) Isotopic-ratio plasma mass spectrometer
EP0581600A3 (de) Verfahren zum Betrieb einer Quadrupolionenfalle mit hohe Empfindlichkeit.
ZA976105B (en) Method for injection of externally produced ions into a quadrupole ion trap.
DE69414284D1 (de) Plasma-Massenspektrometrie
GB9420264D0 (en) Chemical vapor deposition apparatus
DE69208170D1 (de) Plasma unterstützte chemische Dampfabscheidung von einem Oxidfilmstapel
GB9804689D0 (en) A method of comparative analyis using an ion trap mass spectrometer
ZA921427B (en) Plasma enhanced chemical vapor deposition device
NO943139L (no) Plasmareaktor for en avsetnings- eller etsingsprosess
GB2157324B (en) A plasma chemical vapor deposition apparatus
DE69314770T2 (de) Reaktives Abscheidungsverfahren mittels ionisiertem Cluster-Strahl
NO942489D0 (no) Plasmareaktor for en avsetnings- eller etsingsprosess
GB2261988B (en) A method of removing ions from an ion trap mass spectrometer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NOVELLUS SYSTEMS, INC., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee