DE69404701D1 - Abstimmbarer oberflächenemittierender Halbleiterlaser - Google Patents

Abstimmbarer oberflächenemittierender Halbleiterlaser

Info

Publication number
DE69404701D1
DE69404701D1 DE69404701T DE69404701T DE69404701D1 DE 69404701 D1 DE69404701 D1 DE 69404701D1 DE 69404701 T DE69404701 T DE 69404701T DE 69404701 T DE69404701 T DE 69404701T DE 69404701 D1 DE69404701 D1 DE 69404701D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
surface emitting
emitting semiconductor
tunable surface
tunable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404701T
Other languages
English (en)
Other versions
DE69404701T2 (de
Inventor
Niloy Kumar Dutta
Daryoosh Vakhshoori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69404701D1 publication Critical patent/DE69404701D1/de
Publication of DE69404701T2 publication Critical patent/DE69404701T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/28—Function characteristic focussing or defocussing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
DE69404701T 1993-03-01 1994-02-23 Abstimmbarer oberflächenemittierender Halbleiterlaser Expired - Fee Related DE69404701T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/026,364 US5301201A (en) 1993-03-01 1993-03-01 Article comprising a tunable semiconductor laser

Publications (2)

Publication Number Publication Date
DE69404701D1 true DE69404701D1 (de) 1997-09-11
DE69404701T2 DE69404701T2 (de) 1998-02-26

Family

ID=21831388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404701T Expired - Fee Related DE69404701T2 (de) 1993-03-01 1994-02-23 Abstimmbarer oberflächenemittierender Halbleiterlaser

Country Status (4)

Country Link
US (1) US5301201A (de)
EP (1) EP0614256B1 (de)
JP (1) JPH06318765A (de)
DE (1) DE69404701T2 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965749A (en) * 1989-06-30 1990-10-23 The Gerber Scientific Instrument Company Method and apparatus providing skip line asynchronous imaging
DE10353951A1 (de) * 2003-11-18 2005-06-16 U-L-M Photonics Gmbh Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter
US5633453A (en) * 1993-01-19 1997-05-27 Mayo Foundation For Medical Education And Research Universal penetration test apparatus and method
US5866801A (en) * 1993-01-19 1999-02-02 Regents Of The University Of California Universal penetration test apparatus with fluid penetration sensor
DE69405427T2 (de) * 1993-03-04 1998-04-02 At & T Corp Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser
US5418802A (en) * 1993-11-12 1995-05-23 Eastman Kodak Company Frequency tunable waveguide extended cavity laser
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
US5621525A (en) * 1995-02-06 1997-04-15 University Of Central Florida Apparatus and method for measuring the power density of a laser beam with a liquid crystal
US6061381A (en) * 1995-09-29 2000-05-09 British Telecommunications Public Limited Company Optically resonant structure
US5757829A (en) * 1996-04-29 1998-05-26 Motorola, Inc. Flip chip power monitoring system for vertical cavity surface emitting lasers
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
WO1999012235A1 (en) * 1997-09-05 1999-03-11 Micron Optics, Inc. Tunable fiber fabry-perot surface-emitting lasers
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
WO1999057528A1 (en) 1998-05-02 1999-11-11 Focal, Inc. Light source power tester
JP3559453B2 (ja) * 1998-06-29 2004-09-02 株式会社東芝 発光素子
US6891664B2 (en) 1999-03-22 2005-05-10 Finisar Corporation Multistage tunable gain optical amplifier
US6445495B1 (en) * 1999-03-22 2002-09-03 Genoa Corporation Tunable-gain lasing semiconductor optical amplifier
TW437104B (en) * 1999-05-25 2001-05-28 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
US6181717B1 (en) * 1999-06-04 2001-01-30 Bandwidth 9 Tunable semiconductor laser system
US6577658B1 (en) * 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6835963B2 (en) * 1999-12-22 2004-12-28 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6636544B2 (en) * 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
US6628696B2 (en) 2001-01-19 2003-09-30 Siros Technologies, Inc. Multi-channel DWDM transmitter based on a vertical cavity surface emitting laser
FR2825524B1 (fr) * 2001-06-05 2007-01-26 Get Enst Bretagne Laser amplificateur a cavite verticale
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
US20030013219A1 (en) * 2001-07-13 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing electro-optic structures
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6947453B2 (en) 2002-01-17 2005-09-20 Optitune Plc Tunable diffractive device
US6953702B2 (en) * 2002-05-16 2005-10-11 Agilent Technologies, Inc. Fixed wavelength vertical cavity optical devices and method of manufacture therefor
US6671425B1 (en) 2002-06-18 2003-12-30 Celight Method and system for acoustically tuning a light source
US6829281B2 (en) * 2002-06-19 2004-12-07 Finisar Corporation Vertical cavity surface emitting laser using photonic crystals
US6704343B2 (en) 2002-07-18 2004-03-09 Finisar Corporation High power single mode vertical cavity surface emitting laser
JP2004087903A (ja) * 2002-08-28 2004-03-18 Yokogawa Electric Corp 面発光レーザ
US6778581B1 (en) * 2002-09-24 2004-08-17 Finisar Corporation Tunable vertical cavity surface emitting laser
US6810056B1 (en) 2002-09-26 2004-10-26 Finisar Corporation Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
US6904206B2 (en) * 2002-10-15 2005-06-07 Micron Optics, Inc. Waferless fiber Fabry-Perot filters
AU2002952347A0 (en) * 2002-10-30 2002-11-14 Edith Cowan University Optical amplifier
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
WO2004059357A1 (en) * 2002-12-20 2004-07-15 Micron Optics, Inc. Temperature compensated ferrule holder for a fiber fabry-perot filter
JP4439199B2 (ja) * 2003-03-20 2010-03-24 株式会社リコー 垂直共振器型面発光半導体レーザ装置、およびそれを用いた光論理演算装置、波長変換装置、光パルス波形整形装置、ならびに光伝送システム
FR2855661A1 (fr) * 2003-05-26 2004-12-03 Optogone Sa Laser a cavite verticale et a emission surfacique, systeme de telecommunication et procede correspondant
US8989523B2 (en) 2004-01-22 2015-03-24 Vescent Photonics, Inc. Liquid crystal waveguide for dynamically controlling polarized light
US8463080B1 (en) 2004-01-22 2013-06-11 Vescent Photonics, Inc. Liquid crystal waveguide having two or more control voltages for controlling polarized light
US8860897B1 (en) 2004-01-22 2014-10-14 Vescent Photonics, Inc. Liquid crystal waveguide having electric field orientated for controlling light
US20050271325A1 (en) * 2004-01-22 2005-12-08 Anderson Michael H Liquid crystal waveguide having refractive shapes for dynamically controlling light
US7720116B2 (en) * 2004-01-22 2010-05-18 Vescent Photonics, Inc. Tunable laser having liquid crystal waveguide
WO2006056208A2 (en) * 2004-11-29 2006-06-01 Alight Technologies A/S Single-mode photonic-crystal vcsels
US20070030873A1 (en) * 2005-08-03 2007-02-08 Finisar Corporation Polarization control in VCSELs using photonics crystals
KR100850718B1 (ko) * 2007-01-17 2008-08-06 삼성전자주식회사 스펙클 저감 레이저
WO2009084692A1 (ja) * 2007-12-28 2009-07-09 Nippon Telegraph And Telephone Corporation 可変焦点レンズ
US9366938B1 (en) * 2009-02-17 2016-06-14 Vescent Photonics, Inc. Electro-optic beam deflector device
US8995038B1 (en) 2010-07-06 2015-03-31 Vescent Photonics, Inc. Optical time delay control device
CN102916342B (zh) * 2012-10-28 2014-12-03 北京工业大学 内腔液晶可调谐垂直腔面发射激光器及其制备方法
US9660415B2 (en) * 2013-04-26 2017-05-23 Hamamatsu Photonics K.K. Semiconductor laser device
DE112014003317T5 (de) * 2013-07-16 2016-03-31 Hamamatsu Photonics K.K. Halbleiterlaservorrichtung
CN103618211B (zh) * 2013-11-18 2016-04-06 北京工业大学 表面液晶-垂直腔面发射激光器及其制备方法
JP6489836B2 (ja) * 2015-01-09 2019-03-27 浜松ホトニクス株式会社 半導体レーザ装置
US10305251B2 (en) * 2016-05-11 2019-05-28 Hewlett Packard Enterprise Development Lp Laser diodes with layer of graphene
US9843160B1 (en) * 2016-12-29 2017-12-12 X Development Llc Integrated digital laser
CN111799654B (zh) * 2020-09-09 2021-01-22 常州纵慧芯光半导体科技有限公司 一种激光器及其制造方法与应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6291914A (ja) * 1985-10-18 1987-04-27 Hitachi Ltd 可変焦点光学系と、これを利用した自動焦点合わせ装置
JP2528886B2 (ja) * 1987-07-16 1996-08-28 富士通株式会社 半導体発光装置
JPH0311689A (ja) * 1989-06-08 1991-01-18 Fujikura Ltd 面発光型波長制御ｄｂｒレーザ
JPH0346384A (ja) * 1989-07-14 1991-02-27 Nec Corp 面型波長可変発光素子
JPH03260633A (ja) * 1990-03-12 1991-11-20 Nippon Telegr & Teleph Corp <Ntt> ファイバ型マルチバンド光アンプ
JPH0548195A (ja) * 1991-08-12 1993-02-26 Nippon Telegr & Teleph Corp <Ntt> 波長可変面発光レーザ

Also Published As

Publication number Publication date
JPH06318765A (ja) 1994-11-15
EP0614256B1 (de) 1997-08-06
EP0614256A1 (de) 1994-09-07
DE69404701T2 (de) 1998-02-26
US5301201A (en) 1994-04-05

Similar Documents

Publication Publication Date Title
DE69404701T2 (de) Abstimmbarer oberflächenemittierender Halbleiterlaser
DE69116038D1 (de) Oberflächenemittierender Halbleiterlaser
DE59306825D1 (de) Durchstimmbarer Halbeiterlaser
DE69325045D1 (de) Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung
DE69601698D1 (de) Oberflächen-emittierender Halbleiterlaser
DE69205388T2 (de) Oberflächenemittierender Laser.
DE69711878D1 (de) Oberflächenemittierender Laser
DE69407455T2 (de) Halbleiterlaser
DE69411364T2 (de) Halbleiterlaser
DE68909747T2 (de) Abstimmbarer Halbleiterlaser.
DE69522778T2 (de) Oberflächenemittierender Laser
DE69305928T2 (de) Halbleiterlaser
DE69432345D1 (de) Halbleiterdiodenlaser
DE69102240D1 (de) Abstimmbarer Halbleiterlaser.
DE69209045T2 (de) Halbleiterlaser
DE59500334D1 (de) Abstimmbare Laserdiode
DE69703261T2 (de) Oberflächenemittierende Laser
DE58904573D1 (de) Abstimmbarer halbleiterlaser.
DE69402733D1 (de) Diodenlaser
DE69224054D1 (de) Halbleiterlaser
DE69524693T2 (de) Halbleiterlaserdiode
DE69407374T2 (de) Halbleiterlaser
DE69402115T2 (de) Halbleiterlaser
DE69405959T2 (de) Integrierte oberflächenemittierende Laservorrichtung
DE69407448T2 (de) Gewinngeführter Diodenlaser

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee