DE69408556D1 - Elektronische Bauteile mit Dünnschicht-Schaltungselementen, die einen Sampling-Schaltkreis bilden - Google Patents
Elektronische Bauteile mit Dünnschicht-Schaltungselementen, die einen Sampling-Schaltkreis bildenInfo
- Publication number
- DE69408556D1 DE69408556D1 DE69408556T DE69408556T DE69408556D1 DE 69408556 D1 DE69408556 D1 DE 69408556D1 DE 69408556 T DE69408556 T DE 69408556T DE 69408556 T DE69408556 T DE 69408556T DE 69408556 D1 DE69408556 D1 DE 69408556D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- electronic components
- circuit elements
- sampling circuit
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005070 sampling Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0294—Details of sampling or holding circuits arranged for use in a driver for data electrodes
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB939311129A GB9311129D0 (en) | 1993-05-28 | 1993-05-28 | Electronic devices with-film circuit elements forming a sampling circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69408556D1 true DE69408556D1 (de) | 1998-03-26 |
DE69408556T2 DE69408556T2 (de) | 1998-08-13 |
Family
ID=10736337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69408556T Expired - Fee Related DE69408556T2 (de) | 1993-05-28 | 1994-05-18 | Elektronische Bauteile mit Dünnschicht-Schaltungselementen, die einen Sampling-Schaltkreis bilden |
Country Status (5)
Country | Link |
---|---|
US (1) | US5684318A (de) |
EP (1) | EP0629003B1 (de) |
JP (1) | JP3987588B2 (de) |
DE (1) | DE69408556T2 (de) |
GB (1) | GB9311129D0 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW324862B (en) | 1996-07-03 | 1998-01-11 | Hitachi Ltd | Liquid display apparatus |
US5808317A (en) * | 1996-07-24 | 1998-09-15 | International Business Machines Corporation | Split-gate, horizontally redundant, and self-aligned thin film transistors |
US5753955A (en) * | 1996-12-19 | 1998-05-19 | Honeywell Inc. | MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates |
US5973358A (en) * | 1997-07-01 | 1999-10-26 | Citizen Watch Co., Ltd. | SOI device having a channel with variable thickness |
JP4027465B2 (ja) | 1997-07-01 | 2007-12-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその製造方法 |
JP3838393B2 (ja) | 1997-09-02 | 2006-10-25 | 株式会社半導体エネルギー研究所 | イメージセンサを内蔵した表示装置 |
JP4271268B2 (ja) | 1997-09-20 | 2009-06-03 | 株式会社半導体エネルギー研究所 | イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置 |
JP4044187B2 (ja) | 1997-10-20 | 2008-02-06 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその作製方法 |
GB9806609D0 (en) * | 1998-03-28 | 1998-05-27 | Philips Electronics Nv | Electronic devices comprising thin-film transistors |
US6060749A (en) * | 1998-04-23 | 2000-05-09 | Texas Instruments - Acer Incorporated | Ultra-short channel elevated S/D MOSFETS formed on an ultra-thin SOI substrate |
JPH11326954A (ja) | 1998-05-15 | 1999-11-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US6734498B2 (en) * | 1998-10-02 | 2004-05-11 | Intel Corporation | Insulated channel field effect transistor with an electric field terminal region |
US6452233B1 (en) * | 1999-03-23 | 2002-09-17 | Citizen Watch Co., Ltd. | SOI device having a leakage stopping layer |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4118485B2 (ja) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US20020060321A1 (en) | 2000-07-14 | 2002-05-23 | Kazlas Peter T. | Minimally- patterned, thin-film semiconductor devices for display applications |
SG160191A1 (en) | 2001-02-28 | 2010-04-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
JP4079655B2 (ja) * | 2001-02-28 | 2008-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP4593256B2 (ja) * | 2001-02-28 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
GB0107410D0 (en) | 2001-03-23 | 2001-05-16 | Koninkl Philips Electronics Nv | Electronic devices comprising thin-film transistors,and their manufacture |
GB0401579D0 (en) * | 2004-01-24 | 2004-02-25 | Koninkl Philips Electronics Nv | Transistor manufacture |
JP2007134730A (ja) * | 2006-12-01 | 2007-05-31 | Semiconductor Energy Lab Co Ltd | 表示装置 |
TW200847097A (en) * | 2007-05-18 | 2008-12-01 | Gigno Technology Co Ltd | Electronic paper apparatus and its driving circuit and manufacturing method |
EP2077616A1 (de) * | 2007-12-27 | 2009-07-08 | TPO Displays Corp. | Transistor-Ausgangsschaltung und Verfahren |
JP5888802B2 (ja) * | 2009-05-28 | 2016-03-22 | 株式会社半導体エネルギー研究所 | トランジスタを有する装置 |
CN103730514B (zh) * | 2014-01-23 | 2019-07-19 | 苏州大学 | 薄膜晶体管 |
CN105810748B (zh) * | 2014-12-31 | 2018-12-21 | 清华大学 | N型薄膜晶体管 |
CN105810749B (zh) * | 2014-12-31 | 2018-12-21 | 清华大学 | N型薄膜晶体管 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660732A (en) * | 1971-02-08 | 1972-05-02 | Signetics Corp | Semiconductor structure with dielectric and air isolation and method |
DE3029539A1 (de) * | 1980-08-04 | 1982-03-11 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle |
JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
JPS6294986A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | Mis型電界効果トランジスタとその駆動方法 |
US4870399A (en) * | 1987-08-24 | 1989-09-26 | North American Philips Corporation | Apparatus for addressing active displays |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
JPH0820642B2 (ja) * | 1989-08-21 | 1996-03-04 | シャープ株式会社 | 液晶表示装置 |
JP2642197B2 (ja) * | 1989-08-21 | 1997-08-20 | シャープ株式会社 | 液晶表示装置 |
EP0459763B1 (de) * | 1990-05-29 | 1997-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Dünnfilmtransistoren |
EP0497427B1 (de) * | 1991-02-01 | 1996-04-10 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
JP2561413B2 (ja) * | 1993-02-23 | 1996-12-11 | 日産自動車株式会社 | 半導体装置 |
-
1993
- 1993-05-28 GB GB939311129A patent/GB9311129D0/en active Pending
-
1994
- 1994-05-18 EP EP94201412A patent/EP0629003B1/de not_active Expired - Lifetime
- 1994-05-18 DE DE69408556T patent/DE69408556T2/de not_active Expired - Fee Related
- 1994-05-26 JP JP11284494A patent/JP3987588B2/ja not_active Expired - Lifetime
-
1996
- 1996-04-25 US US08/639,277 patent/US5684318A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5684318A (en) | 1997-11-04 |
EP0629003A1 (de) | 1994-12-14 |
GB9311129D0 (en) | 1993-07-14 |
DE69408556T2 (de) | 1998-08-13 |
EP0629003B1 (de) | 1998-02-18 |
JPH06338615A (ja) | 1994-12-06 |
JP3987588B2 (ja) | 2007-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |