DE69414828T2 - Ii-vi laserdiode mit vergrabener stegstruktur und herstellungsverfahren - Google Patents

Ii-vi laserdiode mit vergrabener stegstruktur und herstellungsverfahren

Info

Publication number
DE69414828T2
DE69414828T2 DE69414828T DE69414828T DE69414828T2 DE 69414828 T2 DE69414828 T2 DE 69414828T2 DE 69414828 T DE69414828 T DE 69414828T DE 69414828 T DE69414828 T DE 69414828T DE 69414828 T2 DE69414828 T2 DE 69414828T2
Authority
DE
Germany
Prior art keywords
burned
manufacturing
laser diode
bridge structure
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69414828T
Other languages
English (en)
Other versions
DE69414828D1 (de
Inventor
Michael Haase
Jun Qiu
Hwa Cheng
James Depuydt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Publication of DE69414828D1 publication Critical patent/DE69414828D1/de
Application granted granted Critical
Publication of DE69414828T2 publication Critical patent/DE69414828T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H01L33/285—Materials of the light emitting region containing only elements of group II and group VI of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3059—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping in II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
DE69414828T 1993-02-12 1994-01-18 Ii-vi laserdiode mit vergrabener stegstruktur und herstellungsverfahren Expired - Fee Related DE69414828T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/017,115 US5404027A (en) 1991-05-15 1993-02-12 Buried ridge II-VI laser diode
PCT/US1994/001104 WO1994018730A1 (en) 1993-02-12 1994-01-18 Buried-ridge ii-vi laser diode and method of fabrication

Publications (2)

Publication Number Publication Date
DE69414828D1 DE69414828D1 (de) 1999-01-07
DE69414828T2 true DE69414828T2 (de) 1999-04-22

Family

ID=21780811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69414828T Expired - Fee Related DE69414828T2 (de) 1993-02-12 1994-01-18 Ii-vi laserdiode mit vergrabener stegstruktur und herstellungsverfahren

Country Status (6)

Country Link
US (2) US5404027A (de)
EP (1) EP0683930B1 (de)
JP (2) JP3242925B2 (de)
KR (1) KR100311632B1 (de)
DE (1) DE69414828T2 (de)
WO (1) WO1994018730A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
EP0619602A3 (de) * 1993-04-07 1995-01-25 Sony Corp Halbleitervorrichtung und Herstellungsverfahren.
EP0637862A3 (de) * 1993-08-05 1995-05-24 Hitachi Ltd Halbleiterlaservorrichtung und Herstellungsverfahren.
JP2692563B2 (ja) * 1993-12-28 1997-12-17 日本電気株式会社 半導体レーザ埋め込み構造
JP3360105B2 (ja) * 1994-03-04 2002-12-24 富士通株式会社 半導体装置の製造方法
JPH0878785A (ja) * 1994-08-31 1996-03-22 Sharp Corp 半導体レーザ素子およびその製造方法
US5619520A (en) * 1994-09-09 1997-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
EP0918384B1 (de) * 1995-01-20 2002-12-11 Matsushita Electric Industrial Co., Ltd. Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
US5821555A (en) * 1995-03-27 1998-10-13 Kabushiki Kaisha Toshiba Semicoductor device having a hetero interface with a lowered barrier
US6005263A (en) * 1995-03-27 1999-12-21 Kabushiki Kaisha Toshiba Light emitter with lowered heterojunction interface barrier
US5804842A (en) * 1995-06-20 1998-09-08 Nec Research Institute, Inc. Optically writing erasable conductive patterns at a bandgap-engineered heterojunction
US5663976A (en) * 1995-10-16 1997-09-02 Northwestern University Buried-ridge laser device
KR0178492B1 (ko) * 1995-12-21 1999-04-15 양승택 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법
GB2310755A (en) * 1996-02-28 1997-09-03 Sharp Kk A method of etching a semiconductor structure
US5818859A (en) * 1996-06-27 1998-10-06 Minnesota Mining And Manufacturing Company Be-containing II-VI blue-green laser diodes
US5834330A (en) * 1996-10-07 1998-11-10 Minnesota Mining And Manufacturing Company Selective etch method for II-VI semiconductors
US6090637A (en) 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US5767534A (en) 1997-02-24 1998-06-16 Minnesota Mining And Manufacturing Company Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
JP3244115B2 (ja) * 1997-08-18 2002-01-07 日本電気株式会社 半導体レーザー
US5963573A (en) * 1997-08-25 1999-10-05 3M Innovative Properties Company Light absorbing layer for II-VI semiconductor light emitting devices
WO1999039413A2 (en) * 1998-01-28 1999-08-05 Koninklijke Philips Electronics N.V. Ii-iv lasers having index-guided structures
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
US6647041B1 (en) * 2000-05-26 2003-11-11 Finisar Corporation Electrically pumped vertical optical cavity with improved electrical performance
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6717175B2 (en) * 2001-09-27 2004-04-06 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for manufacturing the same
US6768053B1 (en) * 2002-01-09 2004-07-27 Nanoset, Llc Optical fiber assembly
JP2003289176A (ja) * 2002-01-24 2003-10-10 Sony Corp 半導体発光素子およびその製造方法
SE0200750D0 (sv) * 2002-03-13 2002-03-13 Optillion Ab Method for manufacturing av photonic device and a photonic device
GB2406213B (en) * 2003-09-20 2006-07-26 Agilent Technologies Inc Semiconductor device
US8403885B2 (en) 2007-12-17 2013-03-26 Abbott Cardiovascular Systems Inc. Catheter having transitioning shaft segments
JP2010114430A (ja) * 2008-10-07 2010-05-20 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子およびその製造方法
US8373153B2 (en) * 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8367925B2 (en) * 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
EP2449609A1 (de) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmiumfreie neuemittierende halbleiterkonstruktion
US8809834B2 (en) * 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8395141B2 (en) * 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
JP2011091163A (ja) * 2009-10-21 2011-05-06 Sumitomo Electric Ind Ltd 半導体集積素子
US8368047B2 (en) * 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
EP2499663A2 (de) * 2009-11-09 2012-09-19 3M Innovative Properties Company Ätzverfahren für halbleiter
KR20120097382A (ko) * 2009-11-09 2012-09-03 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체의 이방성 식각 방법
US8058641B2 (en) 2009-11-18 2011-11-15 University of Seoul Industry Corporation Foundation Copper blend I-VII compound semiconductor light-emitting devices
KR20120092673A (ko) * 2009-11-18 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ⅱ-ⅵ족 반도체를 위한 신규한 습식 에칭제 및 방법
JP5638483B2 (ja) * 2011-08-03 2014-12-10 株式会社東芝 半導体レーザ装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534033A (en) * 1981-08-25 1985-08-06 Handotal Kenkyu Shinkokai Three terminal semiconductor laser
JPS58176991A (ja) * 1982-04-09 1983-10-17 Sanyo Electric Co Ltd 半導体レ−ザ
JPS60178684A (ja) * 1984-02-24 1985-09-12 Nec Corp 半導体レ−ザ
US4575919A (en) * 1984-05-24 1986-03-18 At&T Bell Laboratories Method of making heteroepitaxial ridge overgrown laser
US4727557A (en) * 1985-12-30 1988-02-23 Xerox Corporation Phased array semiconductor lasers fabricated from impurity induced disordering
JPS637692A (ja) * 1986-06-27 1988-01-13 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2723227B2 (ja) * 1986-09-26 1998-03-09 株式会社東芝 半導体発光素子の製造方法
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
JPS63284878A (ja) * 1987-04-30 1988-11-22 シーメンス、アクチエンゲゼルシヤフト 埋込み活性層をもつレーザダイオードの製造方法
CA1303194C (en) * 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
US4926433A (en) * 1987-10-19 1990-05-15 Ricoh Company, Ltd. Semiconductor laser unit
JP2928532B2 (ja) * 1988-05-06 1999-08-03 株式会社日立製作所 量子干渉光素子
JP2708183B2 (ja) * 1988-07-21 1998-02-04 シャープ株式会社 化合物半導体発光素子
US4894833A (en) * 1988-08-09 1990-01-16 General Electric Company Surface emitting lasers with combined output
US4992837A (en) * 1988-11-15 1991-02-12 Kokusai Denshin Denwa Co., Ltd. Light emitting semiconductor device
JPH02139984A (ja) * 1988-11-18 1990-05-29 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
US5219785A (en) * 1989-01-27 1993-06-15 Spectra Diode Laboratories, Inc. Method of forming current barriers in semiconductor lasers
US5140149A (en) * 1989-03-10 1992-08-18 Canon Kabushiki Kaisha Optical apparatus using wavelength selective photocoupler
JPH02270387A (ja) * 1989-04-11 1990-11-05 Matsushita Electric Ind Co Ltd 半導体発光素子
DE68909408T2 (de) * 1989-07-27 1994-04-21 Ibm Integrierte Halbleiterdiodenlaser und Photodiodenstruktur.
JPH0378279A (ja) * 1989-08-21 1991-04-03 Seiko Epson Corp 半導体レーザの製造方法
US4995047A (en) * 1989-08-30 1991-02-19 The United States Of America As Represented By The United States Department Of Energy Integrated injection-locked semiconductor diode laser
EP0426419B1 (de) * 1989-10-31 1997-09-10 The Furukawa Electric Co., Ltd. Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung
US4989214A (en) * 1990-05-11 1991-01-29 Northern Telecom Limited Laser diode, method for making device and method for monitoring performance of laser diode
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
US5157467A (en) * 1990-09-12 1992-10-20 Canon Kabushiki Kaisha Quantum interference device and method for processing electron waves utilizing real space transfer
US5356832A (en) * 1990-09-12 1994-10-18 Seiko Epson Corporation Method of making surface emission type semiconductor laser
US5213998A (en) * 1991-05-15 1993-05-25 Minnesota Mining And Manufacturing Company Method for making an ohmic contact for p-type group II-VI compound semiconductors
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode
US5274269A (en) * 1991-05-15 1993-12-28 Minnesota Mining And Manufacturing Company Ohmic contact for p-type group II-IV compound semiconductors
JP3129736B2 (ja) * 1992-05-22 2001-01-31 ミネソタ マイニング アンド マニュファクチャリング カンパニー 原子層エピタキシーおよびマイグレーションエンハストエピタキシーにより成長した量子井戸を有するｉｉ−ｖｉ族レーザダイオード
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
US5363395A (en) * 1992-12-28 1994-11-08 North American Philips Corporation Blue-green injection laser structure utilizing II-VI compounds

Also Published As

Publication number Publication date
US5404027A (en) 1995-04-04
WO1994018730A1 (en) 1994-08-18
US5538918A (en) 1996-07-23
JP3828391B2 (ja) 2006-10-04
JP2002100836A (ja) 2002-04-05
EP0683930B1 (de) 1998-11-25
DE69414828D1 (de) 1999-01-07
JPH08506697A (ja) 1996-07-16
JP3242925B2 (ja) 2001-12-25
KR100311632B1 (ko) 2001-12-17
KR960701463A (ko) 1996-02-24
EP0683930A1 (de) 1995-11-29

Similar Documents

Publication Publication Date Title
DE69414828D1 (de) Ii-vi laserdiode mit vergrabener stegstruktur und herstellungsverfahren
DE59606908D1 (de) Diodenlaserbauelement mit kühlelement
DE69411280T2 (de) Laser sintern mit mehreren strahlen
DE69704000T2 (de) Diodenlaseranordnung mit hohem Wirkungsgrad
DE69412946D1 (de) Lichtemittierende Halbleiterdiode und Herstellungsverfahren
DE69305058D1 (de) Im blau-grünen Bereich emittierender Injektionslaser
DE69301821D1 (de) Ii-vi laserdiode mit einzelnem quantum well ohne mantelschichten
DE69813655D1 (de) Hochleistungsoberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren
DE69515428D1 (de) Laserdiode mit Tunnelbarrierenschicht
DE4330987B4 (de) Halbleiterlaser mit Strom- und Lichteingrenzstruktur
KR970004181A (ko) 면발광 반도체 레이저 다이오드 및 그 제조방법
DE69428556D1 (de) Lichtemittierende II-VI-Halbleitervorrichtung und deren Herstellungsmethode
DE69309011D1 (de) Halbleiterlaser mit optimiertem Resonator
DE69402733T2 (de) Diodenlaser
DE69616237T2 (de) Halbleiter-laserdiode und deren herstellungsverfahren
DE68922056D1 (de) Optisch bistabile Laserdiode und Verfahren zum Steuern derselben.
DE69826502D1 (de) Laserdiode mit vergrabener heterostruktur
DE69428835D1 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
DE69400237T2 (de) Halbleiterlaserdioden und Herstellungsverfahren
DE69217466D1 (de) Halbleiterlaser mit reduzierter Temperaturabhängigkeit
DE69304095T2 (de) Laserdiode mit verteilter Rückkopplung mit selektiv angeordneten Verlustabschnitten
DE69418370D1 (de) Laserdiode und zugehöriges Herstellungsverfahren
DE69505544D1 (de) Optischer emissionskopf mit laser und modulator
DE69210343D1 (de) Hochleistungslaser mit Halbleiterfilter
KR900011054A (ko) 발광다이오드 및 제조방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee