DE69418283D1 - TFT mit niedriger parasitärer Kapazität - Google Patents
TFT mit niedriger parasitärer KapazitätInfo
- Publication number
- DE69418283D1 DE69418283D1 DE69418283T DE69418283T DE69418283D1 DE 69418283 D1 DE69418283 D1 DE 69418283D1 DE 69418283 T DE69418283 T DE 69418283T DE 69418283 T DE69418283 T DE 69418283T DE 69418283 D1 DE69418283 D1 DE 69418283D1
- Authority
- DE
- Germany
- Prior art keywords
- tft
- electrode
- parasitic capacitance
- low parasitic
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003071 parasitic effect Effects 0.000 title 1
- 238000002161 passivation Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/154,713 US5414283A (en) | 1993-11-19 | 1993-11-19 | TFT with reduced parasitic capacitance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69418283D1 true DE69418283D1 (de) | 1999-06-10 |
| DE69418283T2 DE69418283T2 (de) | 1999-12-23 |
Family
ID=22552458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69418283T Expired - Fee Related DE69418283T2 (de) | 1993-11-19 | 1994-11-17 | TFT mit niedriger parasitärer Kapazität |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5414283A (de) |
| EP (1) | EP0654828B1 (de) |
| AT (1) | ATE179832T1 (de) |
| CA (1) | CA2135995C (de) |
| DE (1) | DE69418283T2 (de) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3507117B2 (ja) * | 1993-02-26 | 2004-03-15 | キヤノン株式会社 | Ｔｆｔ基板及び該基板を有する液晶表示装置 |
| US5847413A (en) * | 1994-08-31 | 1998-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Differential amplifier circuit and analog buffer |
| US5774099A (en) * | 1995-04-25 | 1998-06-30 | Hitachi, Ltd. | Liquid crystal device with wide viewing angle characteristics |
| US5539219A (en) * | 1995-05-19 | 1996-07-23 | Ois Optical Imaging Systems, Inc. | Thin film transistor with reduced channel length for liquid crystal displays |
| US5532180A (en) * | 1995-06-02 | 1996-07-02 | Ois Optical Imaging Systems, Inc. | Method of fabricating a TFT with reduced channel length |
| US5994721A (en) * | 1995-06-06 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | High aperture LCD with insulating color filters overlapping bus lines on active substrate |
| US6372534B1 (en) | 1995-06-06 | 2002-04-16 | Lg. Philips Lcd Co., Ltd | Method of making a TFT array with photo-imageable insulating layer over address lines |
| JPH0951098A (ja) * | 1995-08-04 | 1997-02-18 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
| US5650358A (en) * | 1995-08-28 | 1997-07-22 | Ois Optical Imaging Systems, Inc. | Method of making a TFT having a reduced channel length |
| KR100219118B1 (ko) * | 1996-08-30 | 1999-09-01 | 구자홍 | 박막트랜지스터 액정표시장치 및 그 제조방법 |
| GB2307768B (en) * | 1995-11-25 | 1998-06-10 | Lg Electronics Inc | Matrix array of active matrix lcd and manufacturing method thereof |
| US5894136A (en) * | 1996-01-15 | 1999-04-13 | Lg Electronics Inc. | Liquid crystal display having a bottom gate TFT switch having a wider active semiconductor layer than a conductive layer on same |
| JP3402909B2 (ja) * | 1996-03-12 | 2003-05-06 | アルプス電気株式会社 | 薄膜トランジスタ装置及び液晶表示装置 |
| US5798745A (en) * | 1996-09-30 | 1998-08-25 | Rockwell International | LCD panel having tailored pushdown voltages |
| US6140687A (en) * | 1996-11-28 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | High frequency ring gate MOSFET |
| GB9626487D0 (en) * | 1996-12-17 | 1997-02-05 | Philips Electronics Nv | Electronic devices and their manufacture |
| JP2985838B2 (ja) * | 1997-07-18 | 1999-12-06 | 日本電気株式会社 | 薄膜トランジスタアレイ基板の製造方法 |
| US6359672B2 (en) | 1997-10-20 | 2002-03-19 | Guardian Industries Corp. | Method of making an LCD or X-ray imaging device with first and second insulating layers |
| US6011274A (en) * | 1997-10-20 | 2000-01-04 | Ois Optical Imaging Systems, Inc. | X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween |
| DE19746619A1 (de) * | 1997-10-22 | 1999-05-06 | Siemens Ag | Elektrisches Halbleiterbauelement |
| US6704133B2 (en) | 1998-03-18 | 2004-03-09 | E-Ink Corporation | Electro-optic display overlays and systems for addressing such displays |
| JP4021045B2 (ja) * | 1998-03-31 | 2007-12-12 | 株式会社アドバンスト・ディスプレイ | アクティブマトリクス型表示装置 |
| US7075502B1 (en) * | 1998-04-10 | 2006-07-11 | E Ink Corporation | Full color reflective display with multichromatic sub-pixels |
| US5917199A (en) | 1998-05-15 | 1999-06-29 | Ois Optical Imaging Systems, Inc. | Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same |
| JP3678587B2 (ja) * | 1998-08-05 | 2005-08-03 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
| WO2001017029A1 (en) | 1999-08-31 | 2001-03-08 | E Ink Corporation | Transistor for an electronically driven display |
| US6159759A (en) * | 1999-11-19 | 2000-12-12 | Chartered Semiconductor Manufacturing Ltd. | Method to form liquid crystal displays using a triple damascene technique |
| US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
| KR100370800B1 (ko) * | 2000-06-09 | 2003-02-05 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제작방법 |
| DE10034873B4 (de) * | 2000-07-18 | 2005-10-13 | Pacifica Group Technologies Pty Ltd | Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug |
| JP2002222944A (ja) * | 2001-01-26 | 2002-08-09 | Kitakiyuushiyuu Techno Center:Kk | 半導体素子 |
| EP1378015A4 (de) | 2001-04-10 | 2005-08-03 | Sarnoff Corp | Verfahren und vorrichtung zur bereitstellung eines aktiven matrix-pixel mit hoher leistungsfähigkeit unter verwendung organischer dünnfilmtransistoren |
| KR100442489B1 (ko) * | 2001-06-11 | 2004-07-30 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 |
| KR100391157B1 (ko) * | 2001-10-25 | 2003-07-16 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 |
| US7053967B2 (en) | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
| US7023503B2 (en) * | 2002-02-20 | 2006-04-04 | Planar Systems, Inc. | Image sensor with photosensitive thin film transistors |
| US7009663B2 (en) * | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
| AU2002336341A1 (en) * | 2002-02-20 | 2003-09-09 | Planar Systems, Inc. | Light sensitive display |
| WO2003075207A2 (en) * | 2002-03-01 | 2003-09-12 | Planar Systems, Inc. | Reflection resistant touch screens |
| US7190008B2 (en) | 2002-04-24 | 2007-03-13 | E Ink Corporation | Electro-optic displays, and components for use therein |
| US7223672B2 (en) * | 2002-04-24 | 2007-05-29 | E Ink Corporation | Processes for forming backplanes for electro-optic displays |
| KR100867286B1 (ko) * | 2002-04-24 | 2008-11-06 | 이 잉크 코포레이션 | 전자 표시장치 |
| US20060034492A1 (en) * | 2002-10-30 | 2006-02-16 | Roy Siegel | Hand recognition system |
| KR100887997B1 (ko) * | 2002-12-26 | 2009-03-09 | 엘지디스플레이 주식회사 | 기생 용량 편차가 최소화된 액정 표시 장치용 박막트랜지스터 |
| US20080084374A1 (en) * | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
| TW586238B (en) * | 2003-06-05 | 2004-05-01 | Hannstar Display Corp | Circular thin film transistor structure |
| US20050134749A1 (en) * | 2003-12-19 | 2005-06-23 | Adiel Abileah | Reflection resistant display |
| KR101030545B1 (ko) * | 2004-03-30 | 2011-04-21 | 엘지디스플레이 주식회사 | 액정표시소자 |
| US7773139B2 (en) | 2004-04-16 | 2010-08-10 | Apple Inc. | Image sensor with photosensitive thin film transistors |
| US7142261B2 (en) * | 2004-06-29 | 2006-11-28 | Au Optronics Corporation | Liquid crystal display having compensation capacitor |
| US7382421B2 (en) * | 2004-10-12 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Thin film transistor with a passivation layer |
| GB0426563D0 (en) | 2004-12-03 | 2005-01-05 | Plastic Logic Ltd | Alignment tolerant patterning on flexible substrates |
| US20060131669A1 (en) * | 2004-12-22 | 2006-06-22 | Douglas Albagli | Thin film transistor for imaging system |
| KR101085451B1 (ko) * | 2005-02-11 | 2011-11-21 | 삼성전자주식회사 | 표시장치용 박막트랜지스터 기판과 그 제조방법 |
| US7796223B2 (en) * | 2005-03-09 | 2010-09-14 | Samsung Electronics Co., Ltd. | Liquid crystal display apparatus having data lines with curved portions and method |
| JP5243686B2 (ja) * | 2005-04-28 | 2013-07-24 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ |
| US7537976B2 (en) * | 2005-05-20 | 2009-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor |
| JP2006337819A (ja) * | 2005-06-03 | 2006-12-14 | Canon Inc | 表示装置およびその駆動方法 |
| JP4702003B2 (ja) * | 2005-11-16 | 2011-06-15 | セイコーエプソン株式会社 | 液晶装置およびプロジェクタ |
| TWI283073B (en) * | 2005-12-14 | 2007-06-21 | Au Optronics Corp | LCD device and fabricating method thereof |
| KR101189279B1 (ko) * | 2006-01-26 | 2012-10-09 | 삼성디스플레이 주식회사 | 표시장치와 이의 제조방법 |
| US20070187685A1 (en) * | 2006-02-10 | 2007-08-16 | Chih-Chung Tu | Thin film transistor and thin film transistor array substrate |
| US7688392B2 (en) * | 2006-04-06 | 2010-03-30 | Chunghwa Picture Tubes, Ltd. | Pixel structure including a gate having an opening and an extension line between the data line and the source |
| TWI328878B (en) | 2006-09-15 | 2010-08-11 | Au Optronics Corp | Electrode structure of a transistor, and pixel structure and display apparatus comprising the same |
| US7456475B2 (en) * | 2006-10-27 | 2008-11-25 | Hannstar Display Corp. | Display panel |
| KR101393636B1 (ko) * | 2007-07-24 | 2014-05-09 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조방법 |
| US9224582B2 (en) | 2007-11-29 | 2015-12-29 | Applied Materials, Inc. | Apparatus and method for depositing electrically conductive pasting material |
| US8110450B2 (en) | 2007-12-19 | 2012-02-07 | Palo Alto Research Center Incorporated | Printed TFT and TFT array with self-aligned gate |
| TWI417606B (zh) * | 2009-03-13 | 2013-12-01 | Century Display Shenxhen Co | High picture quality LCD display panel |
| KR101626899B1 (ko) * | 2009-04-21 | 2016-06-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR101602635B1 (ko) | 2009-11-30 | 2016-03-22 | 삼성디스플레이 주식회사 | 표시 장치, 박막 트랜지스터 기판 및 이의 제조 방법 |
| US9310923B2 (en) | 2010-12-03 | 2016-04-12 | Apple Inc. | Input device for touch sensitive devices |
| US8928635B2 (en) | 2011-06-22 | 2015-01-06 | Apple Inc. | Active stylus |
| US8638320B2 (en) | 2011-06-22 | 2014-01-28 | Apple Inc. | Stylus orientation detection |
| US9329703B2 (en) | 2011-06-22 | 2016-05-03 | Apple Inc. | Intelligent stylus |
| US8879013B2 (en) * | 2011-12-26 | 2014-11-04 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin-film transistor liquid crystal display device, substrate, and manufacturing method |
| US9176604B2 (en) | 2012-07-27 | 2015-11-03 | Apple Inc. | Stylus device |
| US9557845B2 (en) | 2012-07-27 | 2017-01-31 | Apple Inc. | Input device for and method of communication with capacitive devices through frequency variation |
| US9652090B2 (en) | 2012-07-27 | 2017-05-16 | Apple Inc. | Device for digital communication through capacitive coupling |
| KR101373964B1 (ko) | 2012-08-10 | 2014-03-13 | 경희대학교 산학협력단 | 디스플레이 소자 구동회로, 상기 디스플레이 소자 구동회로에 포함되는 박막 트랜지스터 및 이의 제조 방법 |
| US10048775B2 (en) | 2013-03-14 | 2018-08-14 | Apple Inc. | Stylus detection and demodulation |
| CN103178119B (zh) * | 2013-03-25 | 2015-07-29 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板制备方法以及显示装置 |
| CN103311254B (zh) * | 2013-05-09 | 2015-08-19 | 深圳市华星光电技术有限公司 | 显示装置及其制造方法 |
| TWI522716B (zh) | 2013-05-10 | 2016-02-21 | 群創光電股份有限公司 | 薄膜電晶體基板及顯示裝置 |
| US9939935B2 (en) | 2013-07-31 | 2018-04-10 | Apple Inc. | Scan engine for touch controller architecture |
| US10032924B2 (en) * | 2014-03-31 | 2018-07-24 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability |
| KR101539326B1 (ko) * | 2014-04-30 | 2015-07-27 | 엘지디스플레이 주식회사 | Z-인버전 방식의 표시장치 및 그 제조방법 |
| US10061450B2 (en) | 2014-12-04 | 2018-08-28 | Apple Inc. | Coarse scan and targeted active mode scan for touch |
| CN104483793A (zh) * | 2014-12-30 | 2015-04-01 | 深圳市华星光电技术有限公司 | Tft-lcd像素结构及其制作方法 |
| US20160190157A1 (en) * | 2014-12-30 | 2016-06-30 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Pixel structure and manufacturing method thereof |
| CN104679356B (zh) * | 2015-03-23 | 2017-10-20 | 京东方科技集团股份有限公司 | 光学传感单元、触摸面板及其制作方法、显示装置 |
| CN105226071B (zh) * | 2015-10-30 | 2018-06-05 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
| CN105428370B (zh) * | 2015-11-10 | 2018-09-04 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
| US10474277B2 (en) | 2016-05-31 | 2019-11-12 | Apple Inc. | Position-based stylus communication |
| US10504939B2 (en) | 2017-02-21 | 2019-12-10 | The Hong Kong University Of Science And Technology | Integration of silicon thin-film transistors and metal-oxide thin film transistors |
| WO2019135731A1 (en) * | 2018-01-02 | 2019-07-11 | Intel Corporation | Thin-film transistor with source/drain structure to reduce parasitic capacitance |
| CN108493236B (zh) | 2018-03-22 | 2021-03-26 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、柔性显示屏及显示装置 |
| KR102604006B1 (ko) * | 2018-08-14 | 2023-11-21 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 그 제조 방법 |
| CN111081160B (zh) * | 2019-12-31 | 2022-01-04 | 上海天马微电子有限公司 | 显示面板、显示装置及显示面板的制作方法 |
| CN113972285A (zh) * | 2021-10-25 | 2022-01-25 | 京东方科技集团股份有限公司 | 氧化物薄膜晶体管 |
Family Cites Families (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3405330A (en) * | 1965-11-10 | 1968-10-08 | Fairchild Camera Instr Co | Remote-cutoff field effect transistor |
| US3454844A (en) * | 1966-07-01 | 1969-07-08 | Hughes Aircraft Co | Field effect device with overlapping insulated gates |
| US3413531A (en) * | 1966-09-06 | 1968-11-26 | Ion Physics Corp | High frequency field effect transistor |
| US3492548A (en) * | 1967-09-25 | 1970-01-27 | Rca Corp | Electroluminescent device and method of operating |
| JPS4921984B1 (de) * | 1969-05-28 | 1974-06-05 | ||
| JPS4936514B1 (de) * | 1970-05-13 | 1974-10-01 | ||
| US3862360A (en) * | 1973-04-18 | 1975-01-21 | Hughes Aircraft Co | Liquid crystal display system with integrated signal storage circuitry |
| US4112333A (en) * | 1977-03-23 | 1978-09-05 | Westinghouse Electric Corp. | Display panel with integral memory capability for each display element and addressing system |
| US4081896A (en) * | 1977-04-11 | 1978-04-04 | Rca Corporation | Method of making a substrate contact for an integrated circuit |
| US4333225A (en) * | 1978-12-18 | 1982-06-08 | Xerox Corporation | Method of making a circular high voltage field effect transistor |
| US4288806A (en) * | 1979-05-29 | 1981-09-08 | Xerox Corporation | High voltage MOSFET with overlapping electrode structure |
| JPS5910988A (ja) * | 1982-07-12 | 1984-01-20 | ホシデン株式会社 | カラ−液晶表示器 |
| US4738936A (en) * | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
| JPS6065573A (ja) * | 1983-09-21 | 1985-04-15 | Ricoh Co Ltd | 薄膜トランジスタ |
| US4537654A (en) * | 1983-12-09 | 1985-08-27 | Trw Inc. | Two-gate non-coplanar FET with self-aligned source |
| GB8406330D0 (en) * | 1984-03-10 | 1984-04-11 | Lucas Ind Plc | Amorphous silicon field effect transistors |
| JPS60189969A (ja) * | 1984-03-12 | 1985-09-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ |
| JPS60192369A (ja) * | 1984-03-13 | 1985-09-30 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ |
| US4843443A (en) * | 1984-05-14 | 1989-06-27 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
| NL8402856A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| NL8402859A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. |
| EP0197991B1 (de) * | 1984-10-17 | 1989-01-18 | ETAT FRANCAIS représenté par le Ministre des PTT (Centre National d'Etudes des Télécommunications) | Verfahren zum herstellen von elektrischen schaltkreisen mit dünnschichtigen transistoren und kondensatoren |
| US4686553A (en) * | 1985-08-02 | 1987-08-11 | General Electric Company | Low capacitance amorphous silicon field effect transistor structure |
| US4855806A (en) * | 1985-08-02 | 1989-08-08 | General Electric Company | Thin film transistor with aluminum contacts and nonaluminum metallization |
| FR2586859B1 (fr) * | 1985-08-27 | 1987-11-20 | Thomson Csf | Procede de fabrication d'un transistor de commande pour ecran plat de visualisation et element de commande realise selon ce procede |
| FR2593631B1 (fr) * | 1986-01-27 | 1989-02-17 | Maurice Francois | Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran |
| US4877749A (en) * | 1986-02-28 | 1989-10-31 | Polyfet Re Devices, Inc. | Method of forming a low loss FET |
| US4798810A (en) * | 1986-03-10 | 1989-01-17 | Siliconix Incorporated | Method for manufacturing a power MOS transistor |
| GB2199694A (en) * | 1986-12-23 | 1988-07-13 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
| US4862234A (en) * | 1986-11-29 | 1989-08-29 | Sharp Kabushiki Kaisha | Thin-film transistor |
| JPS63184366A (ja) * | 1987-01-26 | 1988-07-29 | Nec Corp | 増幅回路 |
| US4762398A (en) * | 1987-01-26 | 1988-08-09 | Hosiden Electronics Co., Ltd. | Pixel transistor free of parasitic capacitance fluctuations from misalignment |
| JPH0834311B2 (ja) * | 1987-06-10 | 1996-03-29 | 日本電装株式会社 | 半導体装置の製造方法 |
| US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
| JPS6482674A (en) * | 1987-09-25 | 1989-03-28 | Casio Computer Co Ltd | Thin film transistor |
| US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
| US4949141A (en) * | 1988-02-04 | 1990-08-14 | Amoco Corporation | Vertical gate thin film transistors in liquid crystal array |
| US4859623A (en) * | 1988-02-04 | 1989-08-22 | Amoco Corporation | Method of forming vertical gate thin film transistors in liquid crystal array |
| JP2740813B2 (ja) * | 1988-02-26 | 1998-04-15 | セイコープレシジョン株式会社 | 非晶質シリコン薄膜トランジシタアレイ基板 |
| US5051800A (en) * | 1988-04-30 | 1991-09-24 | Hajime Shoji | Thin film semiconductor device and liquid crystal display apparatus using thereof |
| US5237193A (en) * | 1988-06-24 | 1993-08-17 | Siliconix Incorporated | Lightly doped drain MOSFET with reduced on-resistance |
| US4853345A (en) * | 1988-08-22 | 1989-08-01 | Delco Electronics Corporation | Process for manufacture of a vertical DMOS transistor |
| US4914051A (en) * | 1988-12-09 | 1990-04-03 | Sprague Electric Company | Method for making a vertical power DMOS transistor with small signal bipolar transistors |
| JP2558351B2 (ja) * | 1989-06-29 | 1996-11-27 | 沖電気工業株式会社 | アクティブマトリクス表示パネル |
| US5058995A (en) * | 1990-03-15 | 1991-10-22 | Thomson Consumer Electronics, Inc. | Pixel electrode structure for liquid crystal display devices |
| US5073519A (en) * | 1990-10-31 | 1991-12-17 | Texas Instruments Incorporated | Method of fabricating a vertical FET device with low gate to drain overlap capacitance |
| JPH05110075A (ja) * | 1991-10-15 | 1993-04-30 | Nec Corp | 絶縁ゲート型電界効果トランジスタ |
-
1993
- 1993-11-19 US US08/154,713 patent/US5414283A/en not_active Expired - Lifetime
-
1994
- 1994-11-16 CA CA002135995A patent/CA2135995C/en not_active Expired - Fee Related
- 1994-11-17 AT AT94118141T patent/ATE179832T1/de not_active IP Right Cessation
- 1994-11-17 EP EP94118141A patent/EP0654828B1/de not_active Expired - Lifetime
- 1994-11-17 DE DE69418283T patent/DE69418283T2/de not_active Expired - Fee Related
-
1995
- 1995-01-20 US US08/375,658 patent/US5614427A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0654828B1 (de) | 1999-05-06 |
| EP0654828A3 (de) | 1995-08-30 |
| US5614427A (en) | 1997-03-25 |
| CA2135995C (en) | 2000-05-30 |
| ATE179832T1 (de) | 1999-05-15 |
| EP0654828A2 (de) | 1995-05-24 |
| CA2135995A1 (en) | 1995-05-20 |
| US5414283A (en) | 1995-05-09 |
| DE69418283T2 (de) | 1999-12-23 |
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| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |