DE69420591T2 - Nichtflüchtige Halbleiterspeicher - Google Patents

Nichtflüchtige Halbleiterspeicher

Info

Publication number
DE69420591T2
DE69420591T2 DE69420591T DE69420591T DE69420591T2 DE 69420591 T2 DE69420591 T2 DE 69420591T2 DE 69420591 T DE69420591 T DE 69420591T DE 69420591 T DE69420591 T DE 69420591T DE 69420591 T2 DE69420591 T2 DE 69420591T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69420591T
Other languages
English (en)
Other versions
DE69420591D1 (de
Inventor
Kang-Deog Suh
Jeong-Hyuk Choi
Jin-Ki Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19349614&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69420591(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69420591D1 publication Critical patent/DE69420591D1/de
Application granted granted Critical
Publication of DE69420591T2 publication Critical patent/DE69420591T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
DE69420591T 1993-01-13 1994-01-13 Nichtflüchtige Halbleiterspeicher Expired - Lifetime DE69420591T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930000390A KR960000616B1 (ko) 1993-01-13 1993-01-13 불휘발성 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
DE69420591D1 DE69420591D1 (de) 1999-10-21
DE69420591T2 true DE69420591T2 (de) 2000-03-02

Family

ID=19349614

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69420591T Expired - Lifetime DE69420591T2 (de) 1993-01-13 1994-01-13 Nichtflüchtige Halbleiterspeicher

Country Status (7)

Country Link
US (3) US5473563A (de)
EP (1) EP0608075B1 (de)
JP (3) JP3107693B2 (de)
KR (1) KR960000616B1 (de)
CN (1) CN1039608C (de)
DE (1) DE69420591T2 (de)
TW (1) TW329519B (de)

Families Citing this family (206)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960008823B1 (en) * 1993-11-30 1996-07-05 Samsung Electronics Co Ltd Non-volatile semiconductor memory device
US5680347A (en) * 1994-06-29 1997-10-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR970005645B1 (ko) * 1994-10-01 1997-04-18 삼성전자 주식회사 불휘발성 반도체 메모리의 부분 프로그램을 위한 데이터 로딩회로
WO1996024138A1 (fr) * 1995-01-31 1996-08-08 Hitachi, Ltd. Dispositif de memoire remanente et procede de regeneration
KR0142367B1 (ko) * 1995-02-04 1998-07-15 김광호 열 리던던씨를 가지는 불휘발성 반도체 메모리의 소거 검증회로
US5606532A (en) * 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
JP3544743B2 (ja) * 1995-04-17 2004-07-21 株式会社東芝 半導体記憶装置
KR0145224B1 (ko) * 1995-05-27 1998-08-17 김광호 불휘발성 반도체 메모리의 분리된 기입 및 독출 경로를 가지는 워드라인 구동회로
KR100218244B1 (ko) * 1995-05-27 1999-09-01 윤종용 불휘발성 반도체 메모리의 데이터 독출회로
KR0172422B1 (ko) * 1995-06-30 1999-03-30 김광호 스냅백 브레이크다운 현상을 제거한 공통 소오스 라인 제어회로
EP0768673A3 (de) * 1995-07-19 1998-09-30 Texas Instruments Incorporated Verbesserungen in oder an integrierten Schaltungen
KR0164376B1 (ko) * 1995-07-28 1999-02-18 김광호 불휘발성 반도체 메모리의 기준 비트라인 셀
KR0172441B1 (ko) * 1995-09-19 1999-03-30 김광호 불휘발성 반도체 메모리의 프로그램 방법
US5661685A (en) * 1995-09-25 1997-08-26 Xilinx, Inc. Programmable logic device with configurable power supply
KR0169419B1 (ko) * 1995-09-28 1999-02-01 김광호 불휘발성 반도체 메모리의 독출방법 및 장치
US5687114A (en) 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
KR0169412B1 (ko) * 1995-10-16 1999-02-01 김광호 불휘발성 반도체 메모리 장치
KR0169420B1 (ko) * 1995-10-17 1999-02-01 김광호 불 휘발성 반도체 메모리의 데이타 리드 방법 및 그에 따른 회로
KR0169418B1 (ko) * 1995-10-30 1999-02-01 김광호 페이지 소거시 데이터의 자기 보존회로를 가지는 불휘발성 반도체 메모리
US5675540A (en) * 1996-01-22 1997-10-07 Micron Quantum Devices, Inc. Non-volatile memory system having internal data verification test mode
JP3789977B2 (ja) * 1996-05-10 2006-06-28 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR0176115B1 (ko) * 1996-05-15 1999-04-15 김광호 불휘발성 반도체 메모리 장치의 차지 펌프 회로
US5793677A (en) * 1996-06-18 1998-08-11 Hu; Chung-You Using floating gate devices as select gate devices for NAND flash memory and its bias scheme
US5912489A (en) * 1996-06-18 1999-06-15 Advanced Micro Devices, Inc. Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory
US6047352A (en) * 1996-10-29 2000-04-04 Micron Technology, Inc. Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
TW347501B (en) * 1996-10-29 1998-12-11 Hitachi Ltd Memory and microcomputer
US5841867A (en) * 1996-11-01 1998-11-24 Xilinx, Inc. On-chip programming verification system for PLDs
JPH10154803A (ja) * 1996-11-25 1998-06-09 Toshiba Corp 不揮発性半導体メモリ
JPH10177797A (ja) * 1996-12-17 1998-06-30 Toshiba Corp 半導体記憶装置
JP3401395B2 (ja) * 1996-12-25 2003-04-28 シャープ株式会社 不揮発性半導体メモリのデータ書き込み回路
JP3967409B2 (ja) * 1996-12-26 2007-08-29 株式会社東芝 半導体集積回路装置
JP3501916B2 (ja) * 1997-02-28 2004-03-02 シャープ株式会社 半導体記憶装置およびその一括消去ベリファイ方法
US5870335A (en) 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
JP3765163B2 (ja) * 1997-07-14 2006-04-12 ソニー株式会社 レベルシフト回路
JPH11203879A (ja) * 1998-01-19 1999-07-30 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置
TW419812B (en) * 1998-02-18 2001-01-21 Sanyo Electric Co Non-volatile semiconductor memory
US8350309B2 (en) 1998-03-30 2013-01-08 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory
US6353242B1 (en) * 1998-03-30 2002-03-05 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory
US6009014A (en) * 1998-06-03 1999-12-28 Advanced Micro Devices, Inc. Erase verify scheme for NAND flash
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US6421757B1 (en) * 1998-09-30 2002-07-16 Conexant Systems, Inc Method and apparatus for controlling the programming and erasing of flash memory
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
KR100347866B1 (ko) * 1999-03-08 2002-08-09 삼성전자 주식회사 낸드 플래시 메모리 장치
JP3983940B2 (ja) 1999-06-28 2007-09-26 東芝マイクロエレクトロニクス株式会社 不揮発性半導体メモリ
US6288938B1 (en) * 1999-08-19 2001-09-11 Azalea Microelectronics Corporation Flash memory architecture and method of operation
JP3484380B2 (ja) * 1999-09-22 2004-01-06 沖電気工業株式会社 リードオンリメモリ
KR100373670B1 (ko) 1999-09-27 2003-02-26 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치
US6359305B1 (en) 1999-12-22 2002-03-19 Turbo Ic, Inc. Trench-isolated EEPROM flash in segmented bit line page architecture
TW504694B (en) * 2000-01-12 2002-10-01 Hitachi Ltd Non-volatile semiconductor memory device and semiconductor disk device
JP4149637B2 (ja) * 2000-05-25 2008-09-10 株式会社東芝 半導体装置
US6396742B1 (en) 2000-07-28 2002-05-28 Silicon Storage Technology, Inc. Testing of multilevel semiconductor memory
JP3730508B2 (ja) 2000-11-13 2006-01-05 株式会社東芝 半導体記憶装置およびその動作方法
KR100399365B1 (ko) * 2000-12-04 2003-09-26 삼성전자주식회사 페일 비트 검출 스킴을 구비한 불휘발성 반도체 메모리장치 및 그것의 페일 비트 카운트 방법
KR100385230B1 (ko) 2000-12-28 2003-05-27 삼성전자주식회사 불휘발성 반도체 메모리 장치의 프로그램 방법
US6512694B2 (en) 2001-03-16 2003-01-28 Simtek Corporation NAND stack EEPROM with random programming capability
US6414873B1 (en) 2001-03-16 2002-07-02 Simtek Corporation nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
FR2825812B1 (fr) * 2001-06-12 2003-12-05 St Microelectronics Sa Procede de programmation/reprogrammation parallele de memoire flash embarquee par bus can
KR100399353B1 (ko) 2001-07-13 2003-09-26 삼성전자주식회사 시분할 감지 기능을 구비한 불 휘발성 반도체 메모리 장치및 그것의 읽기 방법
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
KR100399351B1 (ko) * 2001-08-07 2003-09-26 삼성전자주식회사 공유된 선택 라인 구조를 갖는 낸드형 플래시 메모리 장치
US6449211B1 (en) * 2001-08-31 2002-09-10 Intel Corporation Voltage driver for a memory
KR100453854B1 (ko) * 2001-09-07 2004-10-20 삼성전자주식회사 향상된 프로그램 방지 특성을 갖는 불휘발성 반도체메모리 장치 및 그것의 프로그램 방법
KR100454119B1 (ko) * 2001-10-24 2004-10-26 삼성전자주식회사 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들
US7505321B2 (en) 2002-12-31 2009-03-17 Sandisk 3D Llc Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
US7233522B2 (en) * 2002-12-31 2007-06-19 Sandisk 3D Llc NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
ITMI20030075A1 (it) * 2003-01-20 2004-07-21 Simicroelectronics S R L Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento.
JP2004310812A (ja) * 2003-04-02 2004-11-04 Renesas Technology Corp 半導体メモリ
US6982892B2 (en) * 2003-05-08 2006-01-03 Micron Technology, Inc. Apparatus and methods for a physical layout of simultaneously sub-accessible memory modules
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
JP2005038504A (ja) * 2003-07-14 2005-02-10 Sony Corp データ消去方法及び同方法を用いたデータ消去回路を有するメモリ装置
US7095653B2 (en) * 2003-10-08 2006-08-22 Micron Technology, Inc. Common wordline flash array architecture
US20050128807A1 (en) * 2003-12-05 2005-06-16 En-Hsing Chen Nand memory array incorporating multiple series selection devices and method for operation of same
US7023739B2 (en) * 2003-12-05 2006-04-04 Matrix Semiconductor, Inc. NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
US7221588B2 (en) * 2003-12-05 2007-05-22 Sandisk 3D Llc Memory array incorporating memory cells arranged in NAND strings
JP4093232B2 (ja) * 2004-01-28 2008-06-04 セイコーエプソン株式会社 電気光学装置、電気光学装置の駆動回路、電気光学装置の駆動方法および電子機器
JP4405292B2 (ja) 2004-03-22 2010-01-27 パナソニック株式会社 不揮発性半導体記憶装置及びその書き込み方法
KR100632940B1 (ko) * 2004-05-06 2006-10-12 삼성전자주식회사 프로그램 사이클 시간을 가변시킬 수 있는 불 휘발성반도체 메모리 장치
EP1598831B1 (de) 2004-05-20 2007-11-21 STMicroelectronics S.r.l. Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
US7002850B2 (en) * 2004-07-06 2006-02-21 Macronix International Co., Ltd. System and method for over erase reduction of nitride read only memory
KR100632946B1 (ko) * 2004-07-13 2006-10-12 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 방법
KR100632947B1 (ko) * 2004-07-20 2006-10-12 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 방법
KR100645044B1 (ko) * 2004-09-17 2006-11-10 삼성전자주식회사 높은 신뢰도를 갖는 불 휘발성 메모리 장치의 프로그램 방법
KR100645055B1 (ko) * 2004-10-28 2006-11-10 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
KR100748553B1 (ko) * 2004-12-20 2007-08-10 삼성전자주식회사 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치
US7437653B2 (en) 2004-12-22 2008-10-14 Sandisk Corporation Erased sector detection mechanisms
KR100648277B1 (ko) * 2004-12-30 2006-11-23 삼성전자주식회사 프로그램 시간을 줄일 수 있는 플래시 메모리 장치
KR100626393B1 (ko) * 2005-04-07 2006-09-20 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 멀티-페이지 카피백 방법
US7295472B2 (en) * 2005-04-11 2007-11-13 Stmicroelectronics S.R.L. Integrated electronic non-volatile memory device having nand structure
US7480195B2 (en) * 2005-05-11 2009-01-20 Micron Technology, Inc. Internal data comparison for memory testing
US7295478B2 (en) * 2005-05-12 2007-11-13 Sandisk Corporation Selective application of program inhibit schemes in non-volatile memory
EP1729306A1 (de) * 2005-06-01 2006-12-06 STMicroelectronics S.r.l. NAND Flash Speicher mit komprimierter Verteilung der Schwellspannungen der Speicherzellen
KR100707308B1 (ko) * 2005-06-13 2007-04-12 삼성전자주식회사 엠엠씨 인터페이스를 갖는 플래시 메모리 장치 및 그것을포함한 메모리 시스템
KR100680455B1 (ko) * 2005-06-30 2007-02-08 주식회사 하이닉스반도체 Ｎａｎｄ형 플래쉬 메모리 소자, 그 제조 방법 및 그 구동방법
KR100687424B1 (ko) * 2005-08-29 2007-02-26 주식회사 하이닉스반도체 비휘발성 메모리 장치
US7747833B2 (en) 2005-09-30 2010-06-29 Mosaid Technologies Incorporated Independent link and bank selection
US7652922B2 (en) 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
US11948629B2 (en) 2005-09-30 2024-04-02 Mosaid Technologies Incorporated Non-volatile memory device with concurrent bank operations
US20070076502A1 (en) * 2005-09-30 2007-04-05 Pyeon Hong B Daisy chain cascading devices
TWI543185B (zh) 2005-09-30 2016-07-21 考文森智財管理公司 具有輸出控制之記憶體及其系統
US7444568B2 (en) * 2006-02-16 2008-10-28 Freescale Semiconductor, Inc. Method and apparatus for testing a data processing system
US8364861B2 (en) * 2006-03-28 2013-01-29 Mosaid Technologies Incorporated Asynchronous ID generation
US8335868B2 (en) * 2006-03-28 2012-12-18 Mosaid Technologies Incorporated Apparatus and method for establishing device identifiers for serially interconnected devices
US8069328B2 (en) * 2006-03-28 2011-11-29 Mosaid Technologies Incorporated Daisy chain cascade configuration recognition technique
US7551492B2 (en) 2006-03-29 2009-06-23 Mosaid Technologies, Inc. Non-volatile semiconductor memory with page erase
CN101410906B (zh) * 2006-03-31 2015-04-29 考文森智财管理公司 闪烁存储器系统及控制方法
US7907450B2 (en) * 2006-05-08 2011-03-15 Macronix International Co., Ltd. Methods and apparatus for implementing bit-by-bit erase of a flash memory device
US7876613B2 (en) * 2006-05-18 2011-01-25 Samsung Electronics Co., Ltd. Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
KR100778082B1 (ko) * 2006-05-18 2007-11-21 삼성전자주식회사 단일의 래치 구조를 갖는 멀티-비트 플래시 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리카드
US8014199B2 (en) * 2006-05-22 2011-09-06 Spansion Llc Memory system with switch element
KR100787942B1 (ko) * 2006-07-24 2007-12-24 삼성전자주식회사 선택 라인을 공유하는 엑스아이피 플래시 메모리 장치
US7627795B2 (en) * 2006-07-26 2009-12-01 Freescale Semiconductor, Inc Pipelined data processor with deterministic signature generation
US7823033B2 (en) * 2006-07-26 2010-10-26 Freescale Semiconductor, Inc. Data processing with configurable registers
US8407395B2 (en) 2006-08-22 2013-03-26 Mosaid Technologies Incorporated Scalable memory system
US7904639B2 (en) * 2006-08-22 2011-03-08 Mosaid Technologies Incorporated Modular command structure for memory and memory system
KR100919156B1 (ko) * 2006-08-24 2009-09-28 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 방법
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
US8700818B2 (en) 2006-09-29 2014-04-15 Mosaid Technologies Incorporated Packet based ID generation for serially interconnected devices
KR100769770B1 (ko) * 2006-09-29 2007-10-23 주식회사 하이닉스반도체 메모리 장치의 페이지 버퍼 회로 및 프로그램 방법
KR100770754B1 (ko) * 2006-10-12 2007-10-29 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
JP4908149B2 (ja) * 2006-10-18 2012-04-04 株式会社東芝 Ｎａｎｄ型フラッシュメモリ
US7417904B2 (en) * 2006-10-31 2008-08-26 Atmel Corporation Adaptive gate voltage regulation
US7505326B2 (en) * 2006-10-31 2009-03-17 Atmel Corporation Programming pulse generator
US7817470B2 (en) 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture
US7511996B2 (en) * 2006-11-30 2009-03-31 Mosaid Technologies Incorporated Flash memory program inhibit scheme
US7818464B2 (en) * 2006-12-06 2010-10-19 Mosaid Technologies Incorporated Apparatus and method for capturing serial input data
US8010709B2 (en) * 2006-12-06 2011-08-30 Mosaid Technologies Incorporated Apparatus and method for producing device identifiers for serially interconnected devices of mixed type
US7853727B2 (en) * 2006-12-06 2010-12-14 Mosaid Technologies Incorporated Apparatus and method for producing identifiers regardless of mixed device type in a serial interconnection
US8271758B2 (en) 2006-12-06 2012-09-18 Mosaid Technologies Incorporated Apparatus and method for producing IDS for interconnected devices of mixed type
US8331361B2 (en) * 2006-12-06 2012-12-11 Mosaid Technologies Incorporated Apparatus and method for producing device identifiers for serially interconnected devices of mixed type
KR100876082B1 (ko) * 2006-12-07 2008-12-26 삼성전자주식회사 메모리 소자 및 그 형성 방법
US7529149B2 (en) * 2006-12-12 2009-05-05 Mosaid Technologies Incorporated Memory system and method with serial and parallel modes
US8984249B2 (en) * 2006-12-20 2015-03-17 Novachips Canada Inc. ID generation apparatus and method for serially interconnected devices
US20080151654A1 (en) 2006-12-22 2008-06-26 Allan James D Method and apparatus to implement a reset function in a non-volatile static random access memory
EP2490225A1 (de) 2007-02-07 2012-08-22 Mosaid Technologies Incorporated Quellenseitiges asymmetrisches Vorladeprogrammierungsschema
US8010710B2 (en) * 2007-02-13 2011-08-30 Mosaid Technologies Incorporated Apparatus and method for identifying device type of serially interconnected devices
US7646636B2 (en) 2007-02-16 2010-01-12 Mosaid Technologies Incorporated Non-volatile memory with dynamic multi-mode operation
WO2008098342A1 (en) * 2007-02-16 2008-08-21 Mosaid Technologies Incorporated Semiconductor device and method for reducing power consumption in a system having interconnected devices
US7796462B2 (en) * 2007-02-22 2010-09-14 Mosaid Technologies Incorporated Data flow control in multiple independent port
US8086785B2 (en) 2007-02-22 2011-12-27 Mosaid Technologies Incorporated System and method of page buffer operation for memory devices
US8046527B2 (en) 2007-02-22 2011-10-25 Mosaid Technologies Incorporated Apparatus and method for using a page buffer of a memory device as a temporary cache
US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
KR100875538B1 (ko) * 2007-02-27 2008-12-26 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 및 소거 방법
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
US8351262B2 (en) * 2007-04-23 2013-01-08 Samsung Electronics Co., Ltd. Flash memory device and program method thereof
KR100890017B1 (ko) * 2007-04-23 2009-03-25 삼성전자주식회사 프로그램 디스터브를 감소시킬 수 있는 플래시 메모리 장치및 그것의 프로그램 방법
US7577029B2 (en) * 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
KR100890016B1 (ko) * 2007-05-10 2009-03-25 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및그것의 프로그램 방법
KR100884234B1 (ko) * 2007-05-25 2009-02-18 삼성전자주식회사 프로그램 성능을 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
KR100894487B1 (ko) 2007-06-08 2009-04-22 주식회사 하이닉스반도체 워드라인 구동회로, 이를 포함하는 반도체 메모리장치 및그 테스트방법
KR101321472B1 (ko) * 2007-07-23 2013-10-25 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 프로그램 방법
KR101358752B1 (ko) * 2007-08-06 2014-02-06 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및그것의 프로그램 방법
KR100919556B1 (ko) * 2007-08-10 2009-10-01 주식회사 하이닉스반도체 상 변화 메모리 장치
KR101392431B1 (ko) * 2007-08-14 2014-05-08 삼성전자주식회사 더미 셀을 갖는 플래시 메모리 장치 및 그것의 소거 방법
KR101308048B1 (ko) * 2007-10-10 2013-09-12 삼성전자주식회사 반도체 메모리 장치
KR101328552B1 (ko) * 2007-11-16 2013-11-13 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
KR101489885B1 (ko) * 2007-11-21 2015-02-06 삼성전자주식회사 개선된 신뢰성을 갖는 트랩형 비휘발성 메모리 장치 및 그동작 방법
US7913128B2 (en) * 2007-11-23 2011-03-22 Mosaid Technologies Incorporated Data channel test apparatus and method thereof
KR101416740B1 (ko) 2007-11-26 2014-07-09 삼성전자주식회사 플래시 메모리 장치 및 그것의 읽기 방법
US7983099B2 (en) 2007-12-20 2011-07-19 Mosaid Technologies Incorporated Dual function compatible non-volatile memory device
US8291248B2 (en) * 2007-12-21 2012-10-16 Mosaid Technologies Incorporated Non-volatile semiconductor memory device with power saving feature
US7978518B2 (en) 2007-12-21 2011-07-12 Mosaid Technologies Incorporated Hierarchical common source line structure in NAND flash memory
CN101903953B (zh) 2007-12-21 2013-12-18 莫塞德技术公司 具有功率节省特性的非易失性半导体存储器设备
US7940572B2 (en) 2008-01-07 2011-05-10 Mosaid Technologies Incorporated NAND flash memory having multiple cell substrates
US8000151B2 (en) 2008-01-10 2011-08-16 Micron Technology, Inc. Semiconductor memory column decoder device and method
WO2009097681A1 (en) 2008-02-04 2009-08-13 Mosaid Technologies Incorporated Flexible memory operations in nand flash devices
US8068365B2 (en) 2008-02-04 2011-11-29 Mosaid Technologies Incorporated Non-volatile memory device having configurable page size
KR101503875B1 (ko) 2008-03-17 2015-03-25 삼성전자주식회사 단채널 효과를 억제할 수 있는 반도체 장치 및 그 제조방법
US8060730B2 (en) * 2008-05-30 2011-11-15 Freescale Semiconductor, Inc. Selective MISR data accumulation during exception processing
KR20090126077A (ko) * 2008-06-03 2009-12-08 삼성전자주식회사 메모리 반도체 장치 및 그 제조 방법
DE102009023789A1 (de) 2008-06-11 2009-12-31 Samsung Electronics Co., Ltd., Suwon Speichervorrichtungen mit vertikalen Säulen und Verfahren zum Herstellen und Betreiben derselben
KR101539697B1 (ko) * 2008-06-11 2015-07-27 삼성전자주식회사 수직형 필라를 활성영역으로 사용하는 3차원 메모리 장치,그 제조 방법 및 그 동작 방법
JP5086959B2 (ja) 2008-09-26 2012-11-28 株式会社東芝 不揮発性半導体記憶装置
JP5136328B2 (ja) * 2008-09-26 2013-02-06 富士通セミコンダクター株式会社 半導体メモリ、半導体メモリの動作方法およびシステム
US8737129B2 (en) 2008-11-14 2014-05-27 Samsung Electronics Co., Ltd. Nonvolatile memory device and read method thereof
JP5305856B2 (ja) 2008-11-19 2013-10-02 株式会社東芝 不揮発性半導体メモリ
US8037235B2 (en) * 2008-12-18 2011-10-11 Mosaid Technologies Incorporated Device and method for transferring data to a non-volatile memory device
US8194481B2 (en) * 2008-12-18 2012-06-05 Mosaid Technologies Incorporated Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
KR100933674B1 (ko) * 2009-02-20 2009-12-23 주식회사 하이닉스반도체 워드라인 구동회로, 이를 포함하는 디램 및 그 테스트방법
US8189390B2 (en) 2009-03-05 2012-05-29 Mosaid Technologies Incorporated NAND flash architecture with multi-level row decoding
KR101619249B1 (ko) * 2009-11-26 2016-05-11 삼성전자주식회사 프로그램 방법
JP2011146103A (ja) * 2010-01-15 2011-07-28 Toshiba Corp 半導体記憶装置
KR101780422B1 (ko) 2010-11-15 2017-09-22 삼성전자주식회사 불휘발성 메모리 장치, 그것의 읽기 방법, 그리고 그것을 포함하는 메모리 시스템
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
CN105788638A (zh) * 2011-03-04 2016-07-20 瑞萨电子株式会社 半导体器件
JP2013030525A (ja) * 2011-07-27 2013-02-07 Toshiba Corp 不揮発性半導体記憶装置
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system
DE102012109612A1 (de) 2011-10-13 2013-04-18 Samsung Electronics Co., Ltd. Nichtflüchtige Speichervorrichtung, Programmierungsverfahren für nichtflüchtige Speichervorrichtungen und Speichersystem, das eine nichtflüchtiger Speichervorrichtung umfasst
US8958244B2 (en) 2012-10-16 2015-02-17 Conversant Intellectual Property Management Inc. Split block decoder for a nonvolatile memory device
US9704580B2 (en) 2012-10-22 2017-07-11 Conversant Intellectual Property Management Inc. Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices
US9030879B2 (en) 2012-11-15 2015-05-12 Conversant Intellectual Property Management Incorporated Method and system for programming non-volatile memory with junctionless cells
US10403766B2 (en) 2012-12-04 2019-09-03 Conversant Intellectual Property Management Inc. NAND flash memory with vertical cell stack structure and method for manufacturing same
US9007834B2 (en) 2013-01-10 2015-04-14 Conversant Intellectual Property Management Inc. Nonvolatile memory with split substrate select gates and hierarchical bitline configuration
US8995195B2 (en) * 2013-02-12 2015-03-31 Sandisk Technologies Inc. Fast-reading NAND flash memory
US9202931B2 (en) 2013-03-14 2015-12-01 Conversant Intellectual Property Management Inc. Structure and method for manufacture of memory device with thin silicon body
US9025382B2 (en) 2013-03-14 2015-05-05 Conversant Intellectual Property Management Inc. Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof
US9214235B2 (en) 2013-04-16 2015-12-15 Conversant Intellectual Property Management Inc. U-shaped common-body type cell string
US9543021B2 (en) * 2014-03-12 2017-01-10 SK Hynix Inc. Semiconductor device and programming method thereof
KR102320861B1 (ko) * 2015-10-06 2021-11-03 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
CN105551524B (zh) * 2015-12-15 2019-10-18 北京兆易创新科技股份有限公司 一种存储单元的擦除方法
US9997250B2 (en) * 2016-03-17 2018-06-12 SK Hynix Inc. Non-volatile memory device with a plurality of cache latches and switches and method for operating non-volatile memory device
JP6050541B1 (ja) * 2016-06-02 2016-12-21 二美 大谷 パンツ型装着物
CN109390013B (zh) * 2017-08-10 2020-11-06 西安格易安创集成电路有限公司 提高浮栅存储器安全性的方法及装置
KR102434922B1 (ko) * 2018-03-05 2022-08-23 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
WO2022215155A1 (ja) * 2021-04-06 2022-10-13 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2022269737A1 (ja) * 2021-06-22 2022-12-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
CN113672854B (zh) * 2021-08-25 2024-02-06 恒烁半导体(合肥)股份有限公司 一种基于电流镜和存储单元的存内运算方法、装置及其应用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713879B2 (ja) * 1985-06-21 1995-02-15 三菱電機株式会社 半導体記憶装置
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
US4949309A (en) * 1988-05-11 1990-08-14 Catalyst Semiconductor, Inc. EEPROM utilizing single transistor per cell capable of both byte erase and flash erase
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
JPH0824000B2 (ja) * 1989-06-12 1996-03-06 株式会社東芝 半導体メモリ装置
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
US5313432A (en) * 1990-05-23 1994-05-17 Texas Instruments Incorporated Segmented, multiple-decoder memory array and method for programming a memory array
JP3204666B2 (ja) * 1990-11-21 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
US5245570A (en) * 1990-12-21 1993-09-14 Intel Corporation Floating gate non-volatile memory blocks and select transistors
US5345418A (en) * 1991-01-24 1994-09-06 Nexcom Technology, Inc. Single transistor EEPROM architecture
US5185718A (en) * 1991-02-19 1993-02-09 Catalyst Semiconductor Corporation Memory array architecture for flash memory
KR960002006B1 (ko) * 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US5191556A (en) * 1991-03-13 1993-03-02 Advanced Micro Devices, Inc. Method of page-mode programming flash eeprom cell arrays
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
JPH05242693A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 半導体記憶装置
EP0559213B1 (de) * 1992-03-05 1999-09-15 Kabushiki Kaisha Toshiba Nichtflüchtige Halbleiterspeicheranordnung
JP3216230B2 (ja) * 1992-04-24 2001-10-09 新日本製鐵株式会社 不揮発性半導体メモリセルの書き換え方式

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