DE69422714D1 - Verfahren zur Herstellung eines elektronischen Bauelements auf einem SOI Wafer - Google Patents

Verfahren zur Herstellung eines elektronischen Bauelements auf einem SOI Wafer

Info

Publication number
DE69422714D1
DE69422714D1 DE69422714T DE69422714T DE69422714D1 DE 69422714 D1 DE69422714 D1 DE 69422714D1 DE 69422714 T DE69422714 T DE 69422714T DE 69422714 T DE69422714 T DE 69422714T DE 69422714 D1 DE69422714 D1 DE 69422714D1
Authority
DE
Germany
Prior art keywords
producing
electronic component
soi wafer
chip
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69422714T
Other languages
English (en)
Inventor
Ronald E Reedy
Mark L Burgener
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PSemi Corp
Original Assignee
Peregrine Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/090,400 external-priority patent/US5416043A/en
Application filed by Peregrine Semiconductor Corp filed Critical Peregrine Semiconductor Corp
Application granted granted Critical
Publication of DE69422714D1 publication Critical patent/DE69422714D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
DE69422714T 1993-07-12 1994-06-10 Verfahren zur Herstellung eines elektronischen Bauelements auf einem SOI Wafer Expired - Lifetime DE69422714D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/090,400 US5416043A (en) 1993-07-12 1993-07-12 Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
US08/218,561 US5572040A (en) 1993-07-12 1994-03-25 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
PCT/US1994/006626 WO1995002892A1 (en) 1993-07-12 1994-06-10 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip

Publications (1)

Publication Number Publication Date
DE69422714D1 true DE69422714D1 (de) 2000-02-24

Family

ID=26782230

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422714T Expired - Lifetime DE69422714D1 (de) 1993-07-12 1994-06-10 Verfahren zur Herstellung eines elektronischen Bauelements auf einem SOI Wafer

Country Status (8)

Country Link
US (7) US5572040A (de)
EP (1) EP0708980B1 (de)
JP (1) JP3492372B2 (de)
AT (1) ATE189079T1 (de)
CA (1) CA2165334C (de)
DE (1) DE69422714D1 (de)
IL (1) IL110252A0 (de)
WO (1) WO1995002892A1 (de)

Families Citing this family (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190933B1 (en) * 1993-06-30 2001-02-20 The United States Of America As Represented By The Secretary Of The Navy Ultra-high resolution liquid crystal display on silicon-on-sapphire
US5973382A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corporation Capacitor on ultrathin semiconductor on insulator
US5973363A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
US5930638A (en) * 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator
US5863823A (en) * 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
US5572040A (en) * 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
TW297142B (de) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
JP3256084B2 (ja) * 1994-05-26 2002-02-12 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
JPH0832039A (ja) * 1994-07-12 1996-02-02 Nippondenso Co Ltd 半導体装置およびその製造方法
JPH11500268A (ja) * 1995-02-16 1999-01-06 ペラグリン セミコンダクター コーポレイション 集積回路用抵抗負荷及びその作成方法、及びｓｒａｍ
WO1996026545A1 (en) * 1995-02-23 1996-08-29 Peregrine Semiconductor Corporation Capacitor on ultrathin semiconductor on insulator
GB9513909D0 (en) * 1995-07-07 1995-09-06 Plessey Semiconductors Ltd Silicon on sapphire integrated circuit arrangements
US5712866A (en) * 1995-07-18 1998-01-27 Westinghouse Electric Corporation Small low powered digital transmitter for covert remote surveillance
DE19532380A1 (de) * 1995-09-01 1997-03-06 Siemens Ag Verfahren zur Kontaktlochherstellung
JP3472401B2 (ja) * 1996-01-17 2003-12-02 三菱電機株式会社 半導体装置の製造方法
US5770881A (en) * 1996-09-12 1998-06-23 International Business Machines Coproration SOI FET design to reduce transient bipolar current
US6177716B1 (en) * 1997-01-02 2001-01-23 Texas Instruments Incorporated Low loss capacitor structure
JPH10256271A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 電界効果トランジスタおよび高周波電力増幅器
JP3487124B2 (ja) * 1997-03-26 2004-01-13 三菱電機株式会社 高周波回路
EP0925604B1 (de) * 1997-05-29 2008-07-09 Nxp B.V. Methode zur herstellung einer elektronischen schaltung, wobei eine leitetende schicht auf einer isolierenden schicht hergestellt wird und daraus ein leitungsmuster gemacht wird
US5940691A (en) 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices
JPH11135800A (ja) * 1997-10-24 1999-05-21 Nec Corp 半導体装置
US6043560A (en) * 1997-12-03 2000-03-28 Intel Corporation Thermal interface thickness control for a microprocessor
KR19990055422A (ko) * 1997-12-27 1999-07-15 정선종 실리콘 기판에서의 인덕터 장치 및 그 제조 방법
US6484065B1 (en) 1997-12-29 2002-11-19 Kawasaki Microelectronics, Inc. DRAM enhanced processor
US6387753B1 (en) 1997-12-30 2002-05-14 Texas Instruments Incorporated Low loss capacitor structure
US6211738B1 (en) * 1998-01-30 2001-04-03 Conexant Systems, Inc. Stability and enhanced gain of amplifiers using inductive coupling
US5959522A (en) * 1998-02-03 1999-09-28 Motorola, Inc. Integrated electromagnetic device and method
US6215360B1 (en) * 1998-02-23 2001-04-10 Motorola, Inc. Semiconductor chip for RF transceiver and power output circuit therefor
JP3942264B2 (ja) 1998-03-11 2007-07-11 富士通株式会社 半導体基板上に形成されるインダクタンス素子
US6312997B1 (en) * 1998-08-12 2001-11-06 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
US6607136B1 (en) * 1998-09-16 2003-08-19 Beepcard Inc. Physical presence digital authentication system
US7067627B2 (en) * 1999-03-30 2006-06-27 Serono Genetics Institute S.A. Schizophrenia associated genes, proteins and biallelic markers
US6395611B1 (en) * 1998-11-04 2002-05-28 Agere Systems Guardian Corp. Inductor or low loss interconnect and a method of manufacturing an inductor or low loss interconnect in an integrated circuit
US6674135B1 (en) * 1998-11-25 2004-01-06 Advanced Micro Devices, Inc. Semiconductor structure having elevated salicided source/drain regions and metal gate electrode on nitride/oxide dielectric
US6310398B1 (en) 1998-12-03 2001-10-30 Walter M. Katz Routable high-density interfaces for integrated circuit devices
US6222229B1 (en) * 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
US6344378B1 (en) * 1999-03-01 2002-02-05 Micron Technology, Inc. Field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors
US6690056B1 (en) 1999-04-06 2004-02-10 Peregrine Semiconductor Corporation EEPROM cell on SOI
US6667506B1 (en) 1999-04-06 2003-12-23 Peregrine Semiconductor Corporation Variable capacitor with programmability
FR2792775B1 (fr) * 1999-04-20 2001-11-23 France Telecom Dispositif de circuit integre comprenant une inductance a haut coefficient de qualite
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
JP2000353797A (ja) * 1999-06-11 2000-12-19 Mitsubishi Electric Corp 半導体ウエハおよびその製造方法
WO2000079601A1 (fr) * 1999-06-23 2000-12-28 Seiko Epson Corporation Dispositif a semi-conducteur et procede de fabrication dudit dispositif
US6190979B1 (en) 1999-07-12 2001-02-20 International Business Machines Corporation Method for fabricating dual workfunction devices on a semiconductor substrate using counter-doping and gapfill
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP2004503920A (ja) * 2000-05-31 2004-02-05 モトローラ・インコーポレイテッド 半導体デバイスおよび該半導体デバイスを製造する方法
US6583445B1 (en) 2000-06-16 2003-06-24 Peregrine Semiconductor Corporation Integrated electronic-optoelectronic devices and method of making the same
EP1231640A4 (de) * 2000-06-27 2008-10-08 Matsushita Electric Ind Co Ltd Halbleiterbauelement
WO2002003437A1 (en) * 2000-06-30 2002-01-10 Motorola, Inc., A Corporation Of The State Of Delaware Hybrid semiconductor structure and device
WO2002003420A2 (en) * 2000-06-30 2002-01-10 Motorola, Inc., A Corporation Of The State Of Delaware Integrated circuit radio architectures
KR100335800B1 (ko) * 2000-07-04 2002-05-08 박종섭 시모스(ｃｍｏｓ) 트랜지스터 및 그 제조 방법
WO2002009187A2 (en) * 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
AU2001289045A1 (en) * 2000-09-08 2002-03-22 Avaz Networks Hardware function generator support in a dsp
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
CN1254026C (zh) 2000-11-21 2006-04-26 松下电器产业株式会社 通信系统用仪器
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US6657261B2 (en) 2001-01-09 2003-12-02 International Business Machines Corporation Ground-plane device with back oxide topography
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6432754B1 (en) 2001-02-20 2002-08-13 International Business Machines Corporation Double SOI device with recess etch and epitaxy
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
JP3839267B2 (ja) * 2001-03-08 2006-11-01 株式会社ルネサステクノロジ 半導体装置及びそれを用いた通信端末装置
WO2002075785A2 (en) 2001-03-16 2002-09-26 Peregrine Semiconductor Corporation Coupled optical and optoelectronic devices, and method of making the same
US6732334B2 (en) * 2001-04-02 2004-05-04 Matsushita Electric Industrial Co., Ltd. Analog MOS semiconductor device, manufacturing method therefor, manufacturing program therefor, and program device therefor
US6653885B2 (en) 2001-05-03 2003-11-25 Peregrine Semiconductor Corporation On-chip integrated mixer with balun circuit and method of making the same
US6864558B2 (en) * 2001-05-17 2005-03-08 Broadcom Corporation Layout technique for C3MOS inductive broadbanding
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6952040B2 (en) 2001-06-29 2005-10-04 Intel Corporation Transistor structure and method of fabrication
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030048656A1 (en) * 2001-08-28 2003-03-13 Leonard Forbes Four terminal memory cell, a two-transistor sram cell, a sram array, a computer system, a process for forming a sram cell, a process for turning a sram cell off, a process for writing a sram cell and a process for reading data from a sram cell
US6476449B1 (en) 2001-09-05 2002-11-05 Winbond Electronics Corp. Silicide block for ESD protection devices
US6611025B2 (en) 2001-09-05 2003-08-26 Winbond Electronics Corp. Apparatus and method for improved power bus ESD protection
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7796969B2 (en) * 2001-10-10 2010-09-14 Peregrine Semiconductor Corporation Symmetrically and asymmetrically stacked transistor group RF switch
US7613442B1 (en) 2001-10-10 2009-11-03 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US20030076765A1 (en) * 2001-10-18 2003-04-24 Ayres Mark R. Holographic recording using contact prisms
US20030105799A1 (en) * 2001-12-03 2003-06-05 Avaz Networks, Inc. Distributed processing architecture with scalable processing layers
US20030112758A1 (en) * 2001-12-03 2003-06-19 Pang Jon Laurent Methods and systems for managing variable delays in packet transmission
US6653698B2 (en) 2001-12-20 2003-11-25 International Business Machines Corporation Integration of dual workfunction metal gate CMOS devices
EP1506568B1 (de) * 2002-04-29 2016-06-01 Samsung Electronics Co., Ltd. Direktverbindungs-signalisierungssystem
US7750446B2 (en) 2002-04-29 2010-07-06 Interconnect Portfolio Llc IC package structures having separate circuit interconnection structures and assemblies constructed thereof
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US20040004251A1 (en) * 2002-07-08 2004-01-08 Madurawe Raminda U. Insulated-gate field-effect thin film transistors
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US6891272B1 (en) 2002-07-31 2005-05-10 Silicon Pipe, Inc. Multi-path via interconnection structures and methods for manufacturing the same
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US7014472B2 (en) * 2003-01-13 2006-03-21 Siliconpipe, Inc. System for making high-speed connections to board-mounted modules
JP2004241397A (ja) * 2003-01-23 2004-08-26 Dainippon Printing Co Ltd 薄膜トランジスタおよびその製造方法
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
JP2004356490A (ja) * 2003-05-30 2004-12-16 Toshiba Corp 半導体装置
WO2005006429A1 (de) * 2003-07-08 2005-01-20 Infineon Technologies Ag Integrierte schaltungsanordnung mit niederohmigen kontakten und herstellungsverfahren
TW200511584A (en) * 2003-09-15 2005-03-16 Ind Tech Res Inst Thin film transistor structure for field emission display
US6884672B1 (en) * 2003-11-04 2005-04-26 International Business Machines Corporation Method for forming an electronic device
WO2005050712A2 (en) * 2003-11-18 2005-06-02 Halliburton Energy Services, Inc. High-temperature memory systems
AU2004300123B2 (en) * 2003-11-18 2010-12-23 Halliburton Energy Services, Inc. A high temperature memory device
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
EP3570374B1 (de) 2004-06-23 2022-04-20 pSemi Corporation Integriertes hf-frontend
US7248120B2 (en) 2004-06-23 2007-07-24 Peregrine Semiconductor Corporation Stacked transistor method and apparatus
KR100683852B1 (ko) * 2004-07-02 2007-02-15 삼성전자주식회사 반도체 소자의 마스크롬 소자 및 그 형성 방법
US7476918B2 (en) 2004-11-22 2009-01-13 Panasonic Corporation Semiconductor integrated circuit device and vehicle-mounted radar system using the same
JP2006173538A (ja) * 2004-12-20 2006-06-29 Oki Electric Ind Co Ltd 半導体装置
JP5011549B2 (ja) 2004-12-28 2012-08-29 株式会社村田製作所 半導体装置
JP4806418B2 (ja) * 2005-01-10 2011-11-02 クォーティックス インク ビジュアルメディアの統合処理のための統合アーキテクチャ
US7619462B2 (en) * 2005-02-09 2009-11-17 Peregrine Semiconductor Corporation Unpowered switch and bleeder circuit
US8913634B2 (en) * 2005-04-01 2014-12-16 Freescale Semiconductor, Inc. Method and apparatus facilitating multi mode interfaces
JP4947914B2 (ja) 2005-04-06 2012-06-06 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
US7605042B2 (en) * 2005-04-18 2009-10-20 Toshiba America Electronic Components, Inc. SOI bottom pre-doping merged e-SiGe for poly height reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7890891B2 (en) * 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US20080076371A1 (en) * 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US8921193B2 (en) * 2006-01-17 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Pre-gate dielectric process using hydrogen annealing
US7355262B2 (en) * 2006-03-17 2008-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion topography engineering for high performance CMOS fabrication
DE102006016201A1 (de) * 2006-04-06 2007-10-11 Deutsche Telekom Ag Behandlung von Kristallen zur Vermeidung optischen Schadens
JP2008085095A (ja) * 2006-09-28 2008-04-10 Oki Electric Ind Co Ltd 半導体デバイスの製造方法
KR100749478B1 (ko) * 2006-11-21 2007-08-14 삼성에스디아이 주식회사 고상 결정화 장치 및 이를 이용한 박막 트랜지스터의 제조방법
US7668526B2 (en) * 2007-01-16 2010-02-23 Harris Corporation Frequency mixer using current feedback amplifiers
AU2008200506B2 (en) * 2007-02-05 2011-12-08 Newsouth Innovations Pty Limited Interfacing at Low Temperature using CMOS Technology
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
TW200913269A (en) * 2007-09-03 2009-03-16 Chunghwa Picture Tubes Ltd Thin film transistor and manufacturing method thereof
US7795968B1 (en) 2008-01-12 2010-09-14 Peregrine Semiconductor Corporation Power ranging transmit RF power amplifier
EP3958468B1 (de) 2008-02-28 2024-01-31 pSemi Corporation Verfahren und vorrichtung für digitale abstimmung eines kondensators bei einer integrierten schaltung
US20090251960A1 (en) * 2008-04-07 2009-10-08 Halliburton Energy Services, Inc. High temperature memory device
US7863143B2 (en) * 2008-05-01 2011-01-04 International Business Machines Corporation High performance schottky-barrier-source asymmetric MOSFETs
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8390331B2 (en) * 2009-12-29 2013-03-05 Nxp B.V. Flexible CMOS library architecture for leakage power and variability reduction
KR101791713B1 (ko) 2010-02-05 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치
WO2012054642A1 (en) 2010-10-20 2012-04-26 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink - harmonic wrinkle reduction
US8829967B2 (en) 2012-06-27 2014-09-09 Triquint Semiconductor, Inc. Body-contacted partially depleted silicon on insulator transistor
CN104508827B (zh) * 2012-06-28 2018-11-09 天工方案公司 高电阻率基底上的双极型晶体管
JP5977617B2 (ja) * 2012-08-08 2016-08-24 東京エレクトロン株式会社 被処理体のマイクロ波処理方法及びマイクロ波処理装置
US8729952B2 (en) 2012-08-16 2014-05-20 Triquint Semiconductor, Inc. Switching device with non-negative biasing
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US8847672B2 (en) 2013-01-15 2014-09-30 Triquint Semiconductor, Inc. Switching device with resistive divider
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US8923782B1 (en) 2013-02-20 2014-12-30 Triquint Semiconductor, Inc. Switching device with diode-biased field-effect transistor (FET)
US8977217B1 (en) 2013-02-20 2015-03-10 Triquint Semiconductor, Inc. Switching device with negative bias circuit
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
EP2871668B1 (de) 2013-03-27 2018-04-25 NGK Insulators, Ltd. Griffsubstrat für ein verbundsubstrat zur verwendung mit einem halbleiter
TWI538018B (zh) 2013-03-27 2016-06-11 Ngk Insulators Ltd Semiconductor substrate for composite substrate
TWI629753B (zh) 2013-04-26 2018-07-11 日本碍子股份有限公司 半導體用複合基板之操作基板
CN104798177B (zh) 2013-07-18 2017-03-15 日本碍子株式会社 半导体用复合基板的操作基板
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
WO2015098609A1 (ja) 2013-12-25 2015-07-02 日本碍子株式会社 ハンドル基板、半導体用複合基板、半導体回路基板およびその製造方法
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
JP5849176B1 (ja) 2014-02-12 2016-01-27 日本碍子株式会社 半導体用複合基板のハンドル基板および半導体用複合基板
US9143124B2 (en) 2014-02-18 2015-09-22 Acco Switch controls
CN105190839B (zh) 2014-02-26 2019-12-06 日本碍子株式会社 半导体用复合基板的处理基板
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US10340220B2 (en) 2015-08-26 2019-07-02 Intel Corporation Compound lateral resistor structures for integrated circuitry
US9705482B1 (en) 2016-06-24 2017-07-11 Peregrine Semiconductor Corporation High voltage input buffer
US9899415B1 (en) 2016-08-17 2018-02-20 International Business Machines Corporation System on chip fully-depleted silicon on insulator with rf and mm-wave integrated functions
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US9941301B1 (en) * 2016-12-22 2018-04-10 Globalfoundries Inc. Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
CN113035692B (zh) * 2021-03-05 2023-11-17 河南师范大学 一种超宽禁带二维半导体GaPS4的制备方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562608A (en) * 1969-03-24 1971-02-09 Westinghouse Electric Corp Variable integrated coupler
US3798508A (en) * 1969-09-18 1974-03-19 Matsushita Electric Ind Co Ltd Variable capacitance device
US4198649A (en) * 1976-09-03 1980-04-15 Fairchild Camera And Instrument Corporation Memory cell structure utilizing conductive buried regions
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
US4385937A (en) * 1980-05-20 1983-05-31 Tokyo Shibaura Denki Kabushiki Kaisha Regrowing selectively formed ion amorphosized regions by thermal gradient
JPS5748246A (en) * 1980-08-13 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4418470A (en) * 1981-10-21 1983-12-06 General Electric Company Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS59159563A (ja) * 1983-03-02 1984-09-10 Toshiba Corp 半導体装置の製造方法
US4588447A (en) * 1984-06-25 1986-05-13 Rockwell International Corporation Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films
US4607176A (en) * 1984-08-22 1986-08-19 The United States Of America As Represented By The Secretary Of The Air Force Tally cell circuit
JPS61103530A (ja) * 1984-10-25 1986-05-22 Ulvac Corp 真空処理装置における基板の冷却機構
US4617066A (en) * 1984-11-26 1986-10-14 Hughes Aircraft Company Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
US4659392A (en) * 1985-03-21 1987-04-21 Hughes Aircraft Company Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits
US4615762A (en) * 1985-04-30 1986-10-07 Rca Corporation Method for thinning silicon
US4758896A (en) * 1985-12-10 1988-07-19 Citizen Watch Co., Ltd. 3-Dimensional integrated circuit for liquid crystal display TV receiver
JPS62176145A (ja) * 1986-01-29 1987-08-01 Sharp Corp 半導体用基板の製造方法
US4775641A (en) * 1986-09-25 1988-10-04 General Electric Company Method of making silicon-on-sapphire semiconductor devices
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US4872010A (en) * 1988-02-08 1989-10-03 Hughes Aircraft Company Analog-to-digital converter made with focused ion beam technology
US4843448A (en) * 1988-04-18 1989-06-27 The United States Of America As Represented By The Secretary Of The Navy Thin-film integrated injection logic
US5141882A (en) * 1989-04-05 1992-08-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor field effect device having channel stop and channel region formed in a well and manufacturing method therefor
US5029171A (en) * 1989-05-25 1991-07-02 Hughes Aircraft Company Test vector generation system
US5027171A (en) * 1989-08-28 1991-06-25 The United States Of America As Represented By The Secretary Of The Navy Dual polarity floating gate MOS analog memory device
WO1991011027A1 (en) * 1990-01-16 1991-07-25 Iowa State University Research Foundation, Inc. Non-crystalline silicon active device for large-scale digital and analog networks
JPH04122020A (ja) * 1990-09-12 1992-04-22 Fujitsu Ltd 気相エピタキシャル成長方法
US5102809A (en) * 1990-10-11 1992-04-07 Texas Instruments Incorporated SOI BICMOS process
US5285069A (en) * 1990-11-21 1994-02-08 Ricoh Company, Ltd. Array of field effect transistors of different threshold voltages in same semiconductor integrated circuit
US5300443A (en) * 1993-06-30 1994-04-05 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating complementary enhancement and depletion mode field effect transistors on a single substrate
US5572040A (en) * 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5416043A (en) * 1993-07-12 1995-05-16 Peregrine Semiconductor Corporation Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer

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US5883396A (en) 1999-03-16
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US5663570A (en) 1997-09-02
US6057555A (en) 2000-05-02
US5596205A (en) 1997-01-21
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US5572040A (en) 1996-11-05
US5492857A (en) 1996-02-20

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