DE69423742D1 - Bandabstands-Referenzschaltung - Google Patents

Bandabstands-Referenzschaltung

Info

Publication number
DE69423742D1
DE69423742D1 DE69423742T DE69423742T DE69423742D1 DE 69423742 D1 DE69423742 D1 DE 69423742D1 DE 69423742 T DE69423742 T DE 69423742T DE 69423742 T DE69423742 T DE 69423742T DE 69423742 D1 DE69423742 D1 DE 69423742D1
Authority
DE
Germany
Prior art keywords
reference circuit
bandgap reference
bandgap
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69423742T
Other languages
English (en)
Other versions
DE69423742T2 (de
Inventor
William Carl Slemmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Publication of DE69423742D1 publication Critical patent/DE69423742D1/de
Application granted granted Critical
Publication of DE69423742T2 publication Critical patent/DE69423742T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
DE69423742T 1994-04-29 1994-12-22 Bandabstands-Referenzschaltung Expired - Fee Related DE69423742T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23536294A 1994-04-29 1994-04-29

Publications (2)

Publication Number Publication Date
DE69423742D1 true DE69423742D1 (de) 2000-05-04
DE69423742T2 DE69423742T2 (de) 2000-08-31

Family

ID=22885185

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69423742T Expired - Fee Related DE69423742T2 (de) 1994-04-29 1994-12-22 Bandabstands-Referenzschaltung

Country Status (3)

Country Link
US (2) US5818292A (de)
EP (1) EP0680048B1 (de)
DE (1) DE69423742T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3304539B2 (ja) 1993-08-31 2002-07-22 富士通株式会社 基準電圧発生回路
US6181122B1 (en) 1998-08-28 2001-01-30 Globespan, Inc. System and method for starting voltage and current controlled elements
US6188270B1 (en) * 1998-09-04 2001-02-13 International Business Machines Corporation Low-voltage reference circuit
US6198343B1 (en) * 1998-10-23 2001-03-06 Sharp Kabushiki Kaisha Current mirror circuit
GB9920081D0 (en) * 1999-08-24 1999-10-27 Sgs Thomson Microelectronics Current reference circuit
DE10006950C1 (de) * 2000-02-16 2002-01-24 Infineon Technologies Ag Schaltungsanordnung zur Konstantspannungs- und / oder Konstantstromerzeugung
US6377114B1 (en) * 2000-02-25 2002-04-23 National Semiconductor Corporation Resistor independent current generator with moderately positive temperature coefficient and method
US6566850B2 (en) 2000-12-06 2003-05-20 Intermec Ip Corp. Low-voltage, low-power bandgap reference circuit with bootstrap current
US6366071B1 (en) 2001-07-12 2002-04-02 Taiwan Semiconductor Manufacturing Company Low voltage supply bandgap reference circuit using PTAT and PTVBE current source
US6944556B1 (en) * 2001-11-01 2005-09-13 Linear Technology Corporation Circuits and methods for current measurements referred to a precision impedance
US6774711B2 (en) 2002-11-15 2004-08-10 Atmel Corporation Low power bandgap voltage reference circuit
JP4212036B2 (ja) * 2003-06-19 2009-01-21 ローム株式会社 定電圧発生器
US7148742B2 (en) * 2004-07-07 2006-12-12 Micron Technology, Inc. Power supply voltage detection circuitry and methods for use of the same
US7084698B2 (en) 2004-10-14 2006-08-01 Freescale Semiconductor, Inc. Band-gap reference circuit
US7376796B2 (en) * 2005-11-01 2008-05-20 Network Appliance, Inc. Lightweight coherency control protocol for clustered storage system
KR100788346B1 (ko) * 2005-12-28 2008-01-02 동부일렉트로닉스 주식회사 밴드 갭 기준전압 발생회로
US7710190B2 (en) * 2006-08-10 2010-05-04 Texas Instruments Incorporated Apparatus and method for compensating change in a temperature associated with a host device
US7408400B1 (en) * 2006-08-16 2008-08-05 National Semiconductor Corporation System and method for providing a low voltage bandgap reference circuit
US7449941B2 (en) * 2006-08-25 2008-11-11 Micron Technology, Inc. Master bias current generating circuit with decreased sensitivity to silicon process variation
WO2009102425A1 (en) * 2008-02-12 2009-08-20 Netapp, Inc. Hybrid media storage system architecture
US9612607B2 (en) * 2013-06-27 2017-04-04 Texas Instuments Incorporated Bandgap circuit for current and voltage
US9774324B2 (en) * 2014-12-05 2017-09-26 Intel Corporation Biasing scheme for high voltage circuits using low voltage devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447784B1 (en) * 1978-03-21 2000-10-17 Nat Semiconductor Corp Temperature compensated bandgap voltage reference circuit
US4792750A (en) * 1987-04-13 1988-12-20 Teledyne Industries, Inc. Resistorless, precision current source
EP0329247B1 (de) * 1988-02-19 1993-12-29 Koninklijke Philips Electronics N.V. Bandabstand-Referenzspannungsschaltung
US4839535A (en) * 1988-02-22 1989-06-13 Motorola, Inc. MOS bandgap voltage reference circuit
US4935690A (en) * 1988-10-31 1990-06-19 Teledyne Industries, Inc. CMOS compatible bandgap voltage reference
US5029295A (en) * 1990-07-02 1991-07-02 Motorola, Inc. Bandgap voltage reference using a power supply independent current source
US5120994A (en) * 1990-12-17 1992-06-09 Hewlett-Packard Company Bicmos voltage generator
US5304918A (en) * 1992-01-22 1994-04-19 Samsung Semiconductor, Inc. Reference circuit for high speed integrated circuits
US5307007A (en) * 1992-10-19 1994-04-26 National Science Council CMOS bandgap voltage and current references
TW300348B (de) * 1995-03-17 1997-03-11 Maxim Integrated Products
US5726563A (en) * 1996-11-12 1998-03-10 Motorola, Inc. Supply tracking temperature independent reference voltage generator
US6128172A (en) * 1997-02-12 2000-10-03 Infineon Technologies Ag Thermal protection circuit with thermally dependent switching signal
US6271715B1 (en) * 1998-02-27 2001-08-07 Maxim Integrated Products, Inc. Boosting circuit with supply-dependent gain

Also Published As

Publication number Publication date
EP0680048B1 (de) 2000-03-29
US5818292A (en) 1998-10-06
EP0680048A1 (de) 1995-11-02
USRE38250E1 (en) 2003-09-16
DE69423742T2 (de) 2000-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee