DE69424562D1 - Nicht-flüchtiger ferromagnetischer direktzugriffsspeicher mit ultrahoher dichte - Google Patents

Nicht-flüchtiger ferromagnetischer direktzugriffsspeicher mit ultrahoher dichte

Info

Publication number
DE69424562D1
DE69424562D1 DE69424562T DE69424562T DE69424562D1 DE 69424562 D1 DE69424562 D1 DE 69424562D1 DE 69424562 T DE69424562 T DE 69424562T DE 69424562 T DE69424562 T DE 69424562T DE 69424562 D1 DE69424562 D1 DE 69424562D1
Authority
DE
Germany
Prior art keywords
ultra
access memory
high density
direct access
volatile ferromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69424562T
Other languages
English (en)
Other versions
DE69424562T2 (de
Inventor
A Prinz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Health and Human Services
US Department of Navy
Original Assignee
US Department of Health and Human Services
US Department of Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Health and Human Services, US Department of Navy filed Critical US Department of Health and Human Services
Application granted granted Critical
Publication of DE69424562D1 publication Critical patent/DE69424562D1/de
Publication of DE69424562T2 publication Critical patent/DE69424562T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
DE69424562T 1993-10-01 1994-09-30 Nicht-flüchtiger ferromagnetischer direktzugriffsspeicher mit ultrahoher dichte Expired - Fee Related DE69424562T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/130,479 US5477482A (en) 1993-10-01 1993-10-01 Ultra high density, non-volatile ferromagnetic random access memory
PCT/US1994/010914 WO1995010112A1 (en) 1993-10-01 1994-09-30 Ultra high density, non-volatile ferromagnetic random access memory

Publications (2)

Publication Number Publication Date
DE69424562D1 true DE69424562D1 (de) 2000-06-21
DE69424562T2 DE69424562T2 (de) 2001-01-18

Family

ID=22444881

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69424562T Expired - Fee Related DE69424562T2 (de) 1993-10-01 1994-09-30 Nicht-flüchtiger ferromagnetischer direktzugriffsspeicher mit ultrahoher dichte

Country Status (7)

Country Link
US (3) US5477482A (de)
EP (1) EP0727086B1 (de)
JP (1) JPH09509775A (de)
KR (1) KR100421113B1 (de)
CA (1) CA2173222C (de)
DE (1) DE69424562T2 (de)
WO (1) WO1995010112A1 (de)

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US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
US7050329B2 (en) * 1995-04-21 2006-05-23 Johnson Mark B Magnetic spin based memory with inductive write lines
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US6064083A (en) * 1995-04-21 2000-05-16 Johnson; Mark B. Hybrid hall effect memory device and method of operation
JP3767930B2 (ja) * 1995-11-13 2006-04-19 沖電気工業株式会社 情報の記録・再生方法および情報記憶装置
US5835314A (en) * 1996-04-17 1998-11-10 Massachusetts Institute Of Technology Tunnel junction device for storage and switching of signals
US5703805A (en) * 1996-05-08 1997-12-30 Motorola Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses
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US6587370B2 (en) * 2000-11-01 2003-07-01 Canon Kabushiki Kaisha Magnetic memory and information recording and reproducing method therefor
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JP5147972B2 (ja) * 2001-08-02 2013-02-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US6777730B2 (en) * 2001-08-31 2004-08-17 Nve Corporation Antiparallel magnetoresistive memory cells
DE10149737A1 (de) * 2001-10-09 2003-04-24 Infineon Technologies Ag Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind
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Also Published As

Publication number Publication date
DE69424562T2 (de) 2001-01-18
JPH09509775A (ja) 1997-09-30
US6381170B1 (en) 2002-04-30
WO1995010112A1 (en) 1995-04-13
CA2173222A1 (en) 1995-04-13
KR100421113B1 (ko) 2004-06-14
US5661062A (en) 1997-08-26
KR960705320A (ko) 1996-10-09
EP0727086A4 (de) 1997-08-20
CA2173222C (en) 2005-02-08
EP0727086A1 (de) 1996-08-21
EP0727086B1 (de) 2000-05-17
US5477482A (en) 1995-12-19

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