DE69425643D1 - Reinigungsmittel für Halbleiter-Anordnung und Verfahren zur Herstellung einer Halbleiter-Anordnung - Google Patents
Reinigungsmittel für Halbleiter-Anordnung und Verfahren zur Herstellung einer Halbleiter-AnordnungInfo
- Publication number
- DE69425643D1 DE69425643D1 DE69425643T DE69425643T DE69425643D1 DE 69425643 D1 DE69425643 D1 DE 69425643D1 DE 69425643 T DE69425643 T DE 69425643T DE 69425643 T DE69425643 T DE 69425643T DE 69425643 D1 DE69425643 D1 DE 69425643D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- detergent
- producing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00052094A JP3264405B2 (ja) | 1994-01-07 | 1994-01-07 | 半導体装置洗浄剤および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69425643D1 true DE69425643D1 (de) | 2000-09-28 |
| DE69425643T2 DE69425643T2 (de) | 2001-02-08 |
Family
ID=11476052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69425643T Expired - Fee Related DE69425643T2 (de) | 1994-01-07 | 1994-12-29 | Reinigungsmittel für Halbleiter-Anordnung und Verfahren zur Herstellung einer Halbleiter-Anordnung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6462005B1 (de) |
| EP (1) | EP0662705B1 (de) |
| JP (1) | JP3264405B2 (de) |
| KR (1) | KR100352692B1 (de) |
| DE (1) | DE69425643T2 (de) |
| TW (1) | TW324028B (de) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0147659B1 (ko) * | 1995-08-18 | 1998-08-17 | 김광호 | 반도체 장치의 세정에 사용되는 세정액 및 이를 이용한 세정방법 |
| JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| US5911836A (en) * | 1996-02-05 | 1999-06-15 | Mitsubishi Gas Chemical Company, Inc. | Method of producing semiconductor device and rinse for cleaning semiconductor device |
| JP3755776B2 (ja) * | 1996-07-11 | 2006-03-15 | 東京応化工業株式会社 | リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法 |
| JPH1055993A (ja) * | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| US5855811A (en) * | 1996-10-03 | 1999-01-05 | Micron Technology, Inc. | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
| WO1998022568A1 (en) * | 1996-11-22 | 1998-05-28 | Advanced Chemical Systems International, Inc. | Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning |
| JPH10154712A (ja) * | 1996-11-25 | 1998-06-09 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
| KR19990011638A (ko) * | 1997-07-24 | 1999-02-18 | 윤종용 | 반도체장치의 제조에 이용되는 세정액 |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP2001520267A (ja) * | 1997-10-14 | 2001-10-30 | アドバンスド・ケミカル・システムズ・インターナショナル・インコーポレーテッド | 半導体基板からの残留物をストリッピングするためのホウ酸アンモニウム含有組成物 |
| US6051502A (en) * | 1997-10-20 | 2000-04-18 | Micron Technology, Inc. | Methods of forming conductive components and methods of forming conductive lines |
| KR100510446B1 (ko) * | 1998-01-07 | 2005-10-21 | 삼성전자주식회사 | 반도체 장치의 콘택홀 세정방법 |
| US6231677B1 (en) | 1998-02-27 | 2001-05-15 | Kanto Kagaku Kabushiki Kaisha | Photoresist stripping liquid composition |
| KR100415261B1 (ko) * | 1998-03-26 | 2004-03-26 | 이기원 | 전자표시장치및기판용세정및식각조성물 |
| TW467953B (en) | 1998-11-12 | 2001-12-11 | Mitsubishi Gas Chemical Co | New detergent and cleaning method of using it |
| JP4224652B2 (ja) | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
| US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| US6703319B1 (en) * | 1999-06-17 | 2004-03-09 | Micron Technology, Inc. | Compositions and methods for removing etch residue |
| KR100310253B1 (ko) * | 1999-06-28 | 2001-11-01 | 박종섭 | 메탈식각 또는 비아식각 후 발생하는 폴리머의 세정 방법 |
| JP3410403B2 (ja) | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
| US6451707B2 (en) | 1999-12-07 | 2002-09-17 | Matsushita Electronics Corporation | Method of removing reaction product due to plasma ashing of a resist pattern |
| US7456140B2 (en) | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| KR100764888B1 (ko) | 2000-07-10 | 2007-10-09 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 장치용의 유기 및 플라즈마 식각된 잔사의 세척을위한 조성물 |
| US6558879B1 (en) | 2000-09-25 | 2003-05-06 | Ashland Inc. | Photoresist stripper/cleaner compositions containing aromatic acid inhibitors |
| KR100419924B1 (ko) * | 2001-05-02 | 2004-02-25 | 삼성전자주식회사 | 세정액 및 이를 사용한 반사방지막 성분의 세정 방법 |
| JP4532776B2 (ja) | 2001-05-07 | 2010-08-25 | パナソニック株式会社 | 基板洗浄方法及び電子デバイスの製造方法 |
| MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| JP3403187B2 (ja) | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
| JP2003129089A (ja) * | 2001-10-24 | 2003-05-08 | Daikin Ind Ltd | 洗浄用組成物 |
| JP3787085B2 (ja) | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| US20030171239A1 (en) | 2002-01-28 | 2003-09-11 | Patel Bakul P. | Methods and compositions for chemically treating a substrate using foam technology |
| JP4252758B2 (ja) | 2002-03-22 | 2009-04-08 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| US6703301B2 (en) * | 2002-04-26 | 2004-03-09 | Macronix International Co., Ltd. | Method of preventing tungsten plugs from corrosion |
| US7252718B2 (en) | 2002-05-31 | 2007-08-07 | Ekc Technology, Inc. | Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture |
| KR100514167B1 (ko) * | 2002-06-24 | 2005-09-09 | 삼성전자주식회사 | 세정액 및 이를 사용한 세라믹 부품의 세정 방법 |
| US7393819B2 (en) | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
| KR100464858B1 (ko) | 2002-08-23 | 2005-01-05 | 삼성전자주식회사 | 유기 스트리핑 조성물 및 이를 사용한 산화물 식각 방법 |
| JP2004277576A (ja) * | 2003-03-17 | 2004-10-07 | Daikin Ind Ltd | エッチング用又は洗浄用の溶液の製造法 |
| US20040220066A1 (en) * | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
| US7442675B2 (en) * | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
| US6946396B2 (en) | 2003-10-30 | 2005-09-20 | Nissan Chemical Indusries, Ltd. | Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer |
| JP4776191B2 (ja) * | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
| WO2006081406A1 (en) | 2005-01-27 | 2006-08-03 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| US7923423B2 (en) | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| JP4988165B2 (ja) | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
| US20070099806A1 (en) * | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
| JP4826235B2 (ja) | 2005-12-01 | 2011-11-30 | 三菱瓦斯化学株式会社 | 半導体表面処理剤 |
| WO2007063767A1 (ja) | 2005-12-01 | 2007-06-07 | Mitsubishi Gas Chemical Company, Inc. | 半導体素子又は表示素子用洗浄液および洗浄方法 |
| US20070219105A1 (en) * | 2006-03-17 | 2007-09-20 | Georgia Tech Research Corporation | Ionic Additives to Solvent-Based Strippers |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| JP4642001B2 (ja) | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去液組成物 |
| JP4499751B2 (ja) | 2006-11-21 | 2010-07-07 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | フォトレジスト、エッチ残留物及びｂａｒｃを除去するための配合物及び同配合物を含む方法 |
| US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
| US8021490B2 (en) * | 2007-01-04 | 2011-09-20 | Eastman Chemical Company | Substrate cleaning processes through the use of solvents and systems |
| WO2010048139A2 (en) | 2008-10-21 | 2010-04-29 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
| JP2012058273A (ja) | 2010-09-03 | 2012-03-22 | Kanto Chem Co Inc | フォトレジスト残渣およびポリマー残渣除去液組成物 |
| CN112310121A (zh) * | 2020-10-22 | 2021-02-02 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法、显示面板 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3553143A (en) * | 1967-01-18 | 1971-01-05 | Purex Corp | Ammonium hydroxide containing wax stripper |
| US3915882A (en) * | 1972-11-10 | 1975-10-28 | Procter & Gamble | Soap compositions |
| US4056531A (en) * | 1973-09-07 | 1977-11-01 | Ethyl Corporation | Polymonoolefin quaternary ammonium salts of triethylenediamine |
| US3973322A (en) * | 1974-05-13 | 1976-08-10 | Hollis Engineering, Inc. | Mass soldering system and method |
| GB1573206A (en) * | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
| US4215005A (en) * | 1978-01-30 | 1980-07-29 | Allied Chemical Corporation | Organic stripping compositions and method for using same |
| US4265772A (en) * | 1978-11-16 | 1981-05-05 | The Procter & Gamble Company | Antistatic, fabric-softening detergent additive |
| US4184970A (en) * | 1978-11-16 | 1980-01-22 | The Procter & Gamble Company | Antistatic, fabric-softening detergent additive |
| US4343677A (en) * | 1981-03-23 | 1982-08-10 | Bell Telephone Laboratories, Incorporated | Method for patterning films using reactive ion etching thereof |
| US4647480A (en) * | 1983-07-25 | 1987-03-03 | Amchem Products, Inc. | Use of additive in aqueous cure of autodeposited coatings |
| US4520084A (en) * | 1984-06-07 | 1985-05-28 | Standard Oil Company (Indiana) | Etched metal electrodes and their use in nonaqueous electrochemical cells |
| US4522658A (en) * | 1984-06-21 | 1985-06-11 | Halliburton Company | Method and composition for protecting metal surfaces from oxidative environments |
| US4744834A (en) * | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
| JPS63114128A (ja) * | 1986-10-31 | 1988-05-19 | Showa Denko Kk | 表面処理液 |
| US4906349A (en) * | 1988-10-12 | 1990-03-06 | Zircoa Incorporation | Process for the manufacture of a measuring probe for a measuring head to detect the oxygen activity of metal melts and a measuring probe manufactured by such a process |
| SE8903452D0 (sv) * | 1989-10-19 | 1989-10-19 | Lars Aake Hilmer Haakansson | Foerfarande foer betning av jaern och staalytor |
| JP2906590B2 (ja) * | 1990-06-14 | 1999-06-21 | 三菱瓦斯化学株式会社 | アルミニウム配線半導体基板の表面処理剤 |
| JP2866161B2 (ja) * | 1990-07-23 | 1999-03-08 | 株式会社ピュアレックス | 洗浄液用添加剤 |
| DE4101564A1 (de) * | 1991-01-21 | 1992-07-23 | Riedel De Haen Ag | Aetzloesung fuer nasschemische prozesse der halbleiterherstellung |
-
1994
- 1994-01-07 JP JP00052094A patent/JP3264405B2/ja not_active Expired - Fee Related
- 1994-12-29 EP EP94120888A patent/EP0662705B1/de not_active Expired - Lifetime
- 1994-12-29 DE DE69425643T patent/DE69425643T2/de not_active Expired - Fee Related
- 1994-12-30 TW TW083112380A patent/TW324028B/zh not_active IP Right Cessation
-
1995
- 1995-01-05 US US08/369,215 patent/US6462005B1/en not_active Expired - Lifetime
- 1995-01-06 KR KR1019950000138A patent/KR100352692B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE69425643T2 (de) | 2001-02-08 |
| KR950034558A (ko) | 1995-12-28 |
| US6462005B1 (en) | 2002-10-08 |
| EP0662705A2 (de) | 1995-07-12 |
| KR100352692B1 (ko) | 2003-02-19 |
| TW324028B (en) | 1998-01-01 |
| JP3264405B2 (ja) | 2002-03-11 |
| EP0662705A3 (de) | 1995-09-27 |
| EP0662705B1 (de) | 2000-08-23 |
| JPH07201794A (ja) | 1995-08-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |