DE69426185D1 - Halbleiterbauelement geschützt durch Dioden - Google Patents

Halbleiterbauelement geschützt durch Dioden

Info

Publication number
DE69426185D1
DE69426185D1 DE69426185T DE69426185T DE69426185D1 DE 69426185 D1 DE69426185 D1 DE 69426185D1 DE 69426185 T DE69426185 T DE 69426185T DE 69426185 T DE69426185 T DE 69426185T DE 69426185 D1 DE69426185 D1 DE 69426185D1
Authority
DE
Germany
Prior art keywords
diodes
semiconductor device
device protected
protected
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69426185T
Other languages
English (en)
Other versions
DE69426185T2 (de
Inventor
Charles E Weitzel
David J Halchin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69426185D1 publication Critical patent/DE69426185D1/de
Publication of DE69426185T2 publication Critical patent/DE69426185T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
DE69426185T 1993-08-24 1994-07-28 Halbleiterbauelement geschützt durch Dioden Expired - Fee Related DE69426185T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/111,326 US5399893A (en) 1993-08-24 1993-08-24 Diode protected semiconductor device

Publications (2)

Publication Number Publication Date
DE69426185D1 true DE69426185D1 (de) 2000-11-30
DE69426185T2 DE69426185T2 (de) 2001-05-17

Family

ID=22337861

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69426185T Expired - Fee Related DE69426185T2 (de) 1993-08-24 1994-07-28 Halbleiterbauelement geschützt durch Dioden

Country Status (4)

Country Link
US (1) US5399893A (de)
EP (1) EP0645817B1 (de)
JP (1) JPH0786522A (de)
DE (1) DE69426185T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235862B2 (en) * 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
US7081663B2 (en) 2002-01-18 2006-07-25 National Semiconductor Corporation Gate-enhanced junction varactor with gradual capacitance variation
JP2003322330A (ja) 2002-04-30 2003-11-14 Nippon Electric Glass Co Ltd 燃焼装置窓用材料
JP2007312031A (ja) * 2006-05-17 2007-11-29 Matsushita Electric Ind Co Ltd 電子デバイス

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA980012A (en) * 1971-06-08 1975-12-16 Ncr Corporation Protective circuits
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
US4498093A (en) * 1981-09-14 1985-02-05 At&T Bell Laboratories High-power III-V semiconductor device
JPS5851577A (ja) * 1981-09-22 1983-03-26 Matsushita Electric Ind Co Ltd 半導体装置
JPS5944872A (ja) * 1982-09-07 1984-03-13 Toshiba Corp 半導体装置
JPS62208655A (ja) * 1986-02-20 1987-09-12 Fujitsu Ltd 半導体装置
US4990976A (en) * 1987-11-24 1991-02-05 Nec Corporation Semiconductor device including a field effect transistor having a protective diode between source and drain thereof
US5046044A (en) * 1988-12-21 1991-09-03 Texas Instruments Incorporated SEU hardened memory cell
JPH02234463A (ja) * 1989-01-20 1990-09-17 Siemens Ag Ｅｓｄ保護構造

Also Published As

Publication number Publication date
EP0645817A1 (de) 1995-03-29
DE69426185T2 (de) 2001-05-17
EP0645817B1 (de) 2000-10-25
US5399893A (en) 1995-03-21
JPH0786522A (ja) 1995-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8339 Ceased/non-payment of the annual fee