DE69427536D1 - Geschichtete magnetische struktur - Google Patents
Geschichtete magnetische strukturInfo
- Publication number
- DE69427536D1 DE69427536D1 DE69427536T DE69427536T DE69427536D1 DE 69427536 D1 DE69427536 D1 DE 69427536D1 DE 69427536 T DE69427536 T DE 69427536T DE 69427536 T DE69427536 T DE 69427536T DE 69427536 D1 DE69427536 D1 DE 69427536D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetic structure
- layered magnetic
- layered
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12625—Free carbon containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9676593A | 1993-07-23 | 1993-07-23 | |
PCT/US1994/007692 WO1995003604A1 (en) | 1993-07-23 | 1994-07-15 | Magnetic structure with stratified layers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69427536D1 true DE69427536D1 (de) | 2001-07-26 |
DE69427536T2 DE69427536T2 (de) | 2002-04-18 |
Family
ID=22258968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69427536T Expired - Lifetime DE69427536T2 (de) | 1993-07-23 | 1994-07-15 | Geschichtete magnetische struktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US6168860B1 (de) |
EP (1) | EP0710390B1 (de) |
DE (1) | DE69427536T2 (de) |
WO (1) | WO1995003604A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
US5583727A (en) * | 1995-05-15 | 1996-12-10 | International Business Machines Corporation | Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor |
EP1754979B1 (de) | 1998-03-04 | 2010-12-22 | Nonvolatile Electronics, Incorporated | Digitaler magnetischer Signalkoppler |
US6300617B1 (en) * | 1998-03-04 | 2001-10-09 | Nonvolatile Electronics, Incorporated | Magnetic digital signal coupler having selected/reversal directions of magnetization |
US6127045A (en) * | 1998-05-13 | 2000-10-03 | International Business Machines Corporation | Magnetic tunnel junction device with optimized ferromagnetic layer |
US6295187B1 (en) | 1999-06-29 | 2001-09-25 | International Business Machines Corporation | Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer |
US6396660B1 (en) * | 1999-08-23 | 2002-05-28 | Read-Rite Corporation | Magnetic write element having a thermally dissipative structure |
KR100367114B1 (ko) * | 2000-08-04 | 2003-01-09 | 주식회사 화승 인더스트리 | 형광센서 감지용 공압출 이축연신 폴리프로필렌 필름 및 그 제조방법 |
US6665155B2 (en) | 2001-03-08 | 2003-12-16 | International Business Machines Corporation | Spin valve sensor with free layer structure having a cobalt niobium (CoNb) or cobalt niobium hafnium (CoNbHf) layer |
US6741496B2 (en) * | 2001-09-27 | 2004-05-25 | Intel Corporation | Electron spin mechanisms for inducing magnetic-polarization reversal |
US6674617B2 (en) | 2002-03-07 | 2004-01-06 | International Business Machines Corporation | Tunnel junction sensor with a multilayer free-layer structure |
DE10214946B4 (de) * | 2002-04-04 | 2006-01-19 | "Stiftung Caesar" (Center Of Advanced European Studies And Research) | TMR-Sensor |
US6801412B2 (en) | 2002-04-19 | 2004-10-05 | International Business Machines Corporation | Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads |
US6781798B2 (en) | 2002-07-15 | 2004-08-24 | International Business Machines Corporation | CPP sensor with dual self-pinned AP pinned layer structures |
US6870716B2 (en) * | 2002-09-24 | 2005-03-22 | Hitachi Global Storage Technologies Netherland B.V. | Free layer and design for higher areal density |
DE10258860A1 (de) * | 2002-12-17 | 2004-07-15 | Robert Bosch Gmbh | Magnetoresistives Schichtsystem und Sensorelement mit diesem Schichtsystem |
US7268979B2 (en) * | 2003-07-02 | 2007-09-11 | Hitachi Global Storage Technologies Netherlands B.V. | Head with thin AFM with high positive magnetostrictive pinned layer |
US7199495B2 (en) * | 2004-04-01 | 2007-04-03 | The Hong Kong Polytechnic University | Magnetoelectric devices and methods of using same |
US20060262593A1 (en) * | 2004-07-27 | 2006-11-23 | Stephane Aouba | Magnetic memory composition and method of manufacture |
TW200617952A (en) * | 2004-07-27 | 2006-06-01 | Univ Toronto | Tunable magnetic switch |
US7382574B2 (en) * | 2004-12-06 | 2008-06-03 | Seagate Technology Llc | Layered perpendicular writer with pole tip partially embedded in yoke |
US8486545B2 (en) * | 2005-09-28 | 2013-07-16 | Southwest Research Institute | Systems and methods for flaw detection and monitoring at elevated temperatures with wireless communication using surface embedded, monolithically integrated, thin-film, magnetically actuated sensors, and methods for fabricating the sensors |
US7701756B2 (en) | 2005-12-21 | 2010-04-20 | Governing Council Of The University Of Toronto | Magnetic memory composition and method of manufacture |
US9134386B2 (en) * | 2011-06-28 | 2015-09-15 | Oracle International Corporation | Giant magnetoresistive sensor having horizontal stabilizer |
US9123363B2 (en) * | 2012-12-18 | 2015-09-01 | Seagate Technology Llc | Crystalline magnetic layer to amorphous substrate bonding |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1438563A (fr) * | 1965-04-02 | 1966-05-13 | Bull General Electric | Perfectionnements aux lames ou couches ferromagnétiques couplées |
JPS60251682A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | 磁気抵抗効果型素子 |
US5157570A (en) * | 1990-06-29 | 1992-10-20 | Digital Equipment Corporation | Magnetic pole configuration for high density thin film recording head |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
WO1994011889A1 (en) * | 1992-11-16 | 1994-05-26 | Nonvolatile Electronics, Inc. | Magnetoresistive structure with alloy layer |
-
1994
- 1994-07-15 DE DE69427536T patent/DE69427536T2/de not_active Expired - Lifetime
- 1994-07-15 WO PCT/US1994/007692 patent/WO1995003604A1/en active IP Right Grant
- 1994-07-15 EP EP94923390A patent/EP0710390B1/de not_active Expired - Lifetime
-
1996
- 1996-07-12 US US08/679,183 patent/US6168860B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1995003604A1 (en) | 1995-02-02 |
EP0710390A4 (de) | 1996-05-29 |
US6168860B1 (en) | 2001-01-02 |
DE69427536T2 (de) | 2002-04-18 |
EP0710390B1 (de) | 2001-06-20 |
EP0710390A1 (de) | 1996-05-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NVE CORP., EDEN PRAIRIE, MINN., US |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN |