DE69428439D1 - Verbessertes system zur fehlerabbildung - Google Patents

Verbessertes system zur fehlerabbildung

Info

Publication number
DE69428439D1
DE69428439D1 DE69428439T DE69428439T DE69428439D1 DE 69428439 D1 DE69428439 D1 DE 69428439D1 DE 69428439 T DE69428439 T DE 69428439T DE 69428439 T DE69428439 T DE 69428439T DE 69428439 D1 DE69428439 D1 DE 69428439D1
Authority
DE
Germany
Prior art keywords
mapping system
improved error
error mapping
improved
mapping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69428439T
Other languages
English (en)
Other versions
DE69428439T2 (de
Inventor
L Sopori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midwest Research Institute
Original Assignee
Midwest Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midwest Research Institute filed Critical Midwest Research Institute
Application granted granted Critical
Publication of DE69428439D1 publication Critical patent/DE69428439D1/de
Publication of DE69428439T2 publication Critical patent/DE69428439T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9506—Optical discs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8477—Investigating crystals, e.g. liquid crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G01N2021/8864—Mapping zones of defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G01N21/474—Details of optical heads therefor, e.g. using optical fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/065—Integrating spheres

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
DE69428439T 1993-05-10 1994-05-10 Verbessertes system zur fehlerabbildung Expired - Lifetime DE69428439T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/060,301 US5406367A (en) 1993-05-10 1993-05-10 Defect mapping system
PCT/US1994/005208 WO1994027136A1 (en) 1993-05-10 1994-05-10 Improved defect mapping system

Publications (2)

Publication Number Publication Date
DE69428439D1 true DE69428439D1 (de) 2001-10-31
DE69428439T2 DE69428439T2 (de) 2002-05-29

Family

ID=22028641

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428439T Expired - Lifetime DE69428439T2 (de) 1993-05-10 1994-05-10 Verbessertes system zur fehlerabbildung

Country Status (5)

Country Link
US (1) US5406367A (de)
EP (1) EP0700512B1 (de)
AU (1) AU676058B2 (de)
DE (1) DE69428439T2 (de)
WO (1) WO1994027136A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271916B1 (en) 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
US6644184B1 (en) * 1995-02-09 2003-11-11 Man Roland Druckmaschinen Ag Offset printing machine
KR960035944A (ko) * 1995-03-28 1996-10-28 김주용 반도체 소자 제조시 불량분석 방법
US5597237A (en) * 1995-05-30 1997-01-28 Quantum Logic Corp Apparatus for measuring the emissivity of a semiconductor wafer
GB2303698A (en) * 1995-07-24 1997-02-26 Gersan Ets A method and apparatus for detecting layers of synthetic diamond
US6014208A (en) * 1995-07-24 2000-01-11 Gersan Establishment Examining a diamond
GB2317692B (en) * 1995-07-24 1999-11-24 Gersan Ets Examining a diamond
JP3353560B2 (ja) * 1995-08-24 2002-12-03 ミノルタ株式会社 反射特性測定装置
WO1997012226A1 (en) * 1995-09-25 1997-04-03 Tencor Instruments Improved system for surface inspection
US5835205A (en) * 1996-02-12 1998-11-10 C3, Inc. Optical testing system for distinguishing a silicon carbide gemstone from a diamond
US5831725A (en) * 1996-10-16 1998-11-03 Atlas Electric Devices Co. Two-mode surface defect testing system
US6174392B1 (en) 1999-03-04 2001-01-16 Northrop Grumman Corporation Composite structure repair process
US6275295B1 (en) 1999-04-30 2001-08-14 Midwest Research Institute Optical system for determining physical characteristics of a solar cell
US6415977B1 (en) * 2000-08-30 2002-07-09 Micron Technology, Inc. Method and apparatus for marking and identifying a defective die site
US6538730B2 (en) * 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
US7116413B2 (en) * 2002-09-13 2006-10-03 Kla-Tencor Corporation Inspection system for integrated applications
JP4028814B2 (ja) * 2003-04-21 2007-12-26 川崎重工業株式会社 マッピング装置
US6989105B2 (en) * 2003-06-27 2006-01-24 International Business Machines Corporation Detection of hardmask removal using a selective etch
CN101512323B (zh) 2006-09-08 2012-08-22 大日本印刷株式会社 污染性评价方法、污染性评价装置、光学部件的检查方法、光学叠层体以及显示器产品
TWI352196B (en) * 2007-11-20 2011-11-11 Ind Tech Res Inst A reflectance measuring apparatus
JP2012026837A (ja) * 2010-07-22 2012-02-09 Sony Corp 微小粒子測定装置
US9234843B2 (en) 2011-08-25 2016-01-12 Alliance For Sustainable Energy, Llc On-line, continuous monitoring in solar cell and fuel cell manufacturing using spectral reflectance imaging
US10684128B2 (en) 2015-03-09 2020-06-16 Alliance For Sustainable Energy, Llc Batch and continuous methods for evaluating the physical and thermal properties of films
US10480935B2 (en) 2016-12-02 2019-11-19 Alliance For Sustainable Energy, Llc Thickness mapping using multispectral imaging
US20200158632A1 (en) * 2018-11-19 2020-05-21 Luminit Llc Test System for a Holographic Optical Element
KR102255421B1 (ko) * 2020-08-11 2021-05-24 충남대학교산학협력단 단결정 산화갈륨의 결함 평가방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056289B2 (ja) * 1976-12-27 1985-12-09 信越半導体株式会社 半導体シリコンの結晶欠陥検出方法および検出液
JPS57132044A (en) * 1981-02-10 1982-08-16 Hitachi Metals Ltd Discriminating method of surface defect
JPS5892920A (ja) * 1981-11-30 1983-06-02 Karuniyuu Kogaku Kogyo Kk ダイヤモンドカラ−測定装置
DE3484982D1 (de) * 1983-11-26 1991-10-02 Toshiba Kawasaki Kk Apparat zum nachweis von oberflaechenfehlern.
JPH0789051B2 (ja) * 1985-06-19 1995-09-27 株式会社日立製作所 エッチング深さ測定方法及びその装置
JPS62119439A (ja) * 1985-11-20 1987-05-30 Mitsubishi Chem Ind Ltd 単結晶表面のエツチピツトの測定方法
US4794265A (en) * 1987-05-08 1988-12-27 Qc Optics, Inc. Surface pit detection system and method
US4925298A (en) * 1988-08-05 1990-05-15 Paolo Dobrilla Etch pit density measuring method
US5008542A (en) * 1989-12-20 1991-04-16 The United States Of America As Represented By The Secretary Of The Air Force Method and system for automated measurement of whole-wafer etch pit density in GaAs

Also Published As

Publication number Publication date
EP0700512B1 (de) 2001-09-26
DE69428439T2 (de) 2002-05-29
AU676058B2 (en) 1997-02-27
EP0700512A1 (de) 1996-03-13
WO1994027136A1 (en) 1994-11-24
AU6830794A (en) 1994-12-12
EP0700512A4 (de) 1996-04-03
US5406367A (en) 1995-04-11

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: MULLER FOTTNER STEINECKE RECHTSANWAELTE PATENTANWAELTE