DE69429906T2 - Halbleiterstruktur und Herstellungsverfahren - Google Patents

Halbleiterstruktur und Herstellungsverfahren

Info

Publication number
DE69429906T2
DE69429906T2 DE69429906T DE69429906T DE69429906T2 DE 69429906 T2 DE69429906 T2 DE 69429906T2 DE 69429906 T DE69429906 T DE 69429906T DE 69429906 T DE69429906 T DE 69429906T DE 69429906 T2 DE69429906 T2 DE 69429906T2
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor structure
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69429906T
Other languages
English (en)
Other versions
DE69429906D1 (de
Inventor
Richard Noetzel
Jiro Temmyo
Toshiaki Tamamura
Mitsuru Sugo
Eiichi Kuramochi
Teruhiko Nishiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22145594A external-priority patent/JP3353802B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69429906D1 publication Critical patent/DE69429906D1/de
Publication of DE69429906T2 publication Critical patent/DE69429906T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
DE69429906T 1993-11-25 1994-11-25 Halbleiterstruktur und Herstellungsverfahren Expired - Lifetime DE69429906T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31754493 1993-11-25
JP34558393 1993-12-22
JP22145594A JP3353802B2 (ja) 1994-09-16 1994-09-16 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69429906D1 DE69429906D1 (de) 2002-03-28
DE69429906T2 true DE69429906T2 (de) 2002-08-01

Family

ID=27330550

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429906T Expired - Lifetime DE69429906T2 (de) 1993-11-25 1994-11-25 Halbleiterstruktur und Herstellungsverfahren

Country Status (3)

Country Link
US (1) US5543354A (de)
EP (1) EP0665578B1 (de)
DE (1) DE69429906T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962863A (en) * 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
KR100446598B1 (ko) * 1997-09-04 2005-05-16 삼성전자주식회사 단일전자터널링소자및그제조방법
KR100249774B1 (ko) * 1997-11-25 2000-03-15 정선종 고품위 지에이에이에스(gaas) 양자점의 성장방법
DE19819259A1 (de) * 1998-04-29 1999-11-04 Max Planck Gesellschaft Verfahren zur epitaktischen Herstellung von Halbleiter-Wachstumsinseln
KR100301116B1 (ko) 1998-12-02 2001-10-20 오길록 양자점 구조를 갖는 화합물반도체 기판의 제조 방법
US6600169B2 (en) * 2000-09-22 2003-07-29 Andreas Stintz Quantum dash device
US6816525B2 (en) 2000-09-22 2004-11-09 Andreas Stintz Quantum dot lasers
FR2814854B1 (fr) * 2000-10-02 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'ilots juxtaposes par depot autoorganise sur un substrat et structure ainsi obtenue
JP2002141495A (ja) * 2000-11-02 2002-05-17 Takashi Katoda 集束イオンビームを用いて作製した極微細構造を有する電子デバイス及び光デバイス
JP3453558B2 (ja) * 2000-12-25 2003-10-06 松下電器産業株式会社 窒化物半導体素子
WO2002071562A2 (en) * 2001-03-02 2002-09-12 Science & Technology Corporation @ Unm Quantum dot vertical cavity surface emitting laser
GB2388957A (en) 2002-05-24 2003-11-26 Imp College Innovations Ltd Quantum dots for extended wavelength operation
AU2002368001A1 (en) * 2002-06-10 2003-12-22 Agilent Technologies, Inc. Quantum dot gain chip
US6859477B2 (en) * 2003-01-07 2005-02-22 University Of Texas Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor
US7282732B2 (en) * 2003-10-24 2007-10-16 Stc. Unm Quantum dot structures
US8595654B1 (en) * 2006-10-03 2013-11-26 Hrl Laboratories, Llc Semiconductor device coding using quantum dot technology
CN100589012C (zh) * 2007-10-17 2010-02-10 中国科学院半导体研究所 量子点光调制器有源区结构
IL196312A (en) 2008-12-31 2014-08-31 Renata Reisfeld Glowing sun rays center
JP5801542B2 (ja) * 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
CN103762256B (zh) * 2014-01-15 2016-03-02 华南理工大学 生长在Si衬底上的InGaAs薄膜及其制备方法
CN103887382A (zh) * 2014-04-02 2014-06-25 叶瑾琳 一种高效率的发光二极管以及激光器
US9240449B2 (en) * 2014-05-26 2016-01-19 Yu-chen Chang Zero-dimensional electron devices and methods of fabricating the same
US10698293B2 (en) * 2017-05-12 2020-06-30 The Australian National University Frequency conversion of electromagnetic radiation
JP7289424B2 (ja) 2017-05-12 2023-06-12 オーストラリアン ナショナル ユニバーシティ 暗視装置、その製造方法、および暗視を実行するための方法
US10615198B1 (en) 2018-01-11 2020-04-07 Apple Inc. Isolation structures in film-based image sensors
US10868203B1 (en) 2018-04-25 2020-12-15 Apple Inc. Film-based image sensor with planarized contacts

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US4122407A (en) * 1976-04-06 1978-10-24 International Business Machines Corporation Heterostructure junction light emitting or responding or modulating devices
JPS6394230A (ja) * 1986-10-09 1988-04-25 Matsushita Electric Ind Co Ltd 半導体装置
US4802181A (en) * 1986-11-27 1989-01-31 Nec Corporation Semiconductor superlattice light emitting sevice
JP2575901B2 (ja) * 1989-11-13 1997-01-29 新技術事業団 グリッド入り量子構造
JP2515051B2 (ja) * 1990-11-14 1996-07-10 三菱電機株式会社 半導体光素子及びその製造方法
US5079774A (en) * 1990-12-27 1992-01-07 International Business Machines Corporation Polarization-tunable optoelectronic devices
EP0535293A1 (de) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur Herstellung einer zusammengesetzten Halbleitervorrichtung
JP2799372B2 (ja) * 1991-03-28 1998-09-17 光技術研究開発株式会社 量子細線レーザ及びその製造方法
US5363395A (en) * 1992-12-28 1994-11-08 North American Philips Corporation Blue-green injection laser structure utilizing II-VI compounds

Also Published As

Publication number Publication date
EP0665578A2 (de) 1995-08-02
DE69429906D1 (de) 2002-03-28
EP0665578A3 (de) 1996-10-30
EP0665578B1 (de) 2002-02-20
US5543354A (en) 1996-08-06

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