DE69430076D1 - Halbleiterspeicher und Zugriffverfahren für solchen Speicher - Google Patents
Halbleiterspeicher und Zugriffverfahren für solchen SpeicherInfo
- Publication number
- DE69430076D1 DE69430076D1 DE69430076T DE69430076T DE69430076D1 DE 69430076 D1 DE69430076 D1 DE 69430076D1 DE 69430076 T DE69430076 T DE 69430076T DE 69430076 T DE69430076 T DE 69430076T DE 69430076 D1 DE69430076 D1 DE 69430076D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- access method
- semiconductor memory
- semiconductor
- access
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5077236A JPH06290582A (ja) | 1993-04-02 | 1993-04-02 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69430076D1 true DE69430076D1 (de) | 2002-04-11 |
DE69430076T2 DE69430076T2 (de) | 2002-11-14 |
Family
ID=13628237
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69411428T Expired - Lifetime DE69411428T2 (de) | 1993-04-02 | 1994-03-30 | Mit einem externen Taktsignal synchronisierte Halbleiterspeicheranordnung zum Ausgeben von Datenbits durch eine kleine Anzahl von Datenleitungen |
DE69430076T Expired - Lifetime DE69430076T2 (de) | 1993-04-02 | 1994-03-30 | Halbleiterspeicher und Zugriffverfahren für solchen Speicher |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69411428T Expired - Lifetime DE69411428T2 (de) | 1993-04-02 | 1994-03-30 | Mit einem externen Taktsignal synchronisierte Halbleiterspeicheranordnung zum Ausgeben von Datenbits durch eine kleine Anzahl von Datenleitungen |
Country Status (5)
Country | Link |
---|---|
US (2) | US5426606A (de) |
EP (2) | EP0618585B1 (de) |
JP (1) | JPH06290582A (de) |
KR (1) | KR0160360B1 (de) |
DE (2) | DE69411428T2 (de) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9405914D0 (en) | 1994-03-24 | 1994-05-11 | Discovision Ass | Video decompression |
US6034674A (en) * | 1992-06-30 | 2000-03-07 | Discovision Associates | Buffer manager |
US6263422B1 (en) | 1992-06-30 | 2001-07-17 | Discovision Associates | Pipeline processing machine with interactive stages operable in response to tokens and system and methods relating thereto |
US5861894A (en) | 1993-06-24 | 1999-01-19 | Discovision Associates | Buffer manager |
JPH07122099A (ja) * | 1993-10-29 | 1995-05-12 | Nec Corp | 半導体メモリ |
JP2734957B2 (ja) * | 1993-12-24 | 1998-04-02 | 日本電気株式会社 | 半導体記憶回路の制御方法 |
CA2145363C (en) | 1994-03-24 | 1999-07-13 | Anthony Mark Jones | Ram interface |
EP0683457A1 (de) * | 1994-05-20 | 1995-11-22 | Advanced Micro Devices, Inc. | Computersystem mit einer Snoopsteuerschaltung |
JP3157681B2 (ja) * | 1994-06-27 | 2001-04-16 | 日本電気株式会社 | 論理データ入力ラッチ回路 |
JP2982618B2 (ja) * | 1994-06-28 | 1999-11-29 | 日本電気株式会社 | メモリ選択回路 |
US6525971B2 (en) | 1995-06-30 | 2003-02-25 | Micron Technology, Inc. | Distributed write data drivers for burst access memories |
US5526320A (en) | 1994-12-23 | 1996-06-11 | Micron Technology Inc. | Burst EDO memory device |
US6804760B2 (en) * | 1994-12-23 | 2004-10-12 | Micron Technology, Inc. | Method for determining a type of memory present in a system |
US5610864A (en) | 1994-12-23 | 1997-03-11 | Micron Technology, Inc. | Burst EDO memory device with maximized write cycle timing |
JPH0963262A (ja) * | 1995-08-17 | 1997-03-07 | Fujitsu Ltd | シンクロナスdram |
JP2907074B2 (ja) * | 1995-08-25 | 1999-06-21 | 日本電気株式会社 | 半導体記憶装置 |
KR100192573B1 (ko) * | 1995-09-18 | 1999-06-15 | 윤종용 | 멀티 뱅크 구조의 반도체 메모리 장치 |
JP2991094B2 (ja) * | 1995-09-19 | 1999-12-20 | 日本電気株式会社 | 半導体記憶装置 |
US6035369A (en) | 1995-10-19 | 2000-03-07 | Rambus Inc. | Method and apparatus for providing a memory with write enable information |
JPH09161471A (ja) * | 1995-12-06 | 1997-06-20 | Internatl Business Mach Corp <Ibm> | Dramシステム、dramシステムの動作方法 |
US5715476A (en) * | 1995-12-29 | 1998-02-03 | Intel Corporation | Method and apparatus for controlling linear and toggle mode burst access sequences using toggle mode increment logic |
US7681005B1 (en) | 1996-01-11 | 2010-03-16 | Micron Technology, Inc. | Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation |
US5838631A (en) | 1996-04-19 | 1998-11-17 | Integrated Device Technology, Inc. | Fully synchronous pipelined ram |
US6209071B1 (en) | 1996-05-07 | 2001-03-27 | Rambus Inc. | Asynchronous request/synchronous data dynamic random access memory |
US6009038A (en) * | 1996-05-31 | 1999-12-28 | United Microelectronics Corporation | Addressing unit |
JPH09320269A (ja) * | 1996-05-31 | 1997-12-12 | Nippon Steel Corp | アドレス装置 |
KR980004988A (ko) * | 1996-06-26 | 1998-03-30 | 김광호 | 버스트 카운터 |
US6981126B1 (en) | 1996-07-03 | 2005-12-27 | Micron Technology, Inc. | Continuous interleave burst access |
US6401186B1 (en) | 1996-07-03 | 2002-06-04 | Micron Technology, Inc. | Continuous burst memory which anticipates a next requested start address |
JPH1050958A (ja) * | 1996-08-05 | 1998-02-20 | Toshiba Corp | 半導体記憶装置、半導体記憶装置のレイアウト方法、半導体記憶装置の動作方法および半導体記憶装置の回路配置パターン |
US5784329A (en) * | 1997-01-13 | 1998-07-21 | Mitsubishi Semiconductor America, Inc. | Latched DRAM write bus for quickly clearing DRAM array with minimum power usage |
US5870347A (en) | 1997-03-11 | 1999-02-09 | Micron Technology, Inc. | Multi-bank memory input/output line selection |
US6014759A (en) | 1997-06-13 | 2000-01-11 | Micron Technology, Inc. | Method and apparatus for transferring test data from a memory array |
US6044429A (en) | 1997-07-10 | 2000-03-28 | Micron Technology, Inc. | Method and apparatus for collision-free data transfers in a memory device with selectable data or address paths |
EP1895538A1 (de) * | 1997-10-10 | 2008-03-05 | Rambus, Inc. | Vorrichtung und Verfahren für geleitete Speicherbetriebe |
US7103742B1 (en) | 1997-12-03 | 2006-09-05 | Micron Technology, Inc. | Burst/pipelined edo memory device |
JP3204384B2 (ja) | 1997-12-10 | 2001-09-04 | エヌイーシーマイクロシステム株式会社 | 半導体記憶回路 |
US6115320A (en) | 1998-02-23 | 2000-09-05 | Integrated Device Technology, Inc. | Separate byte control on fully synchronous pipelined SRAM |
DE69923769T2 (de) * | 1998-04-01 | 2006-02-02 | Mosaid Technologies Incorporated, Kanata | Asynchrones halbleiterspeicher-fliessband |
CA2805213A1 (en) * | 1998-04-01 | 1999-10-01 | Mosaid Technologies Incorporated | Semiconductor memory asynchronous pipeline |
US6405280B1 (en) | 1998-06-05 | 2002-06-11 | Micron Technology, Inc. | Packet-oriented synchronous DRAM interface supporting a plurality of orderings for data block transfers within a burst sequence |
US6279071B1 (en) | 1998-07-07 | 2001-08-21 | Mitsubishi Electric And Electronics Usa, Inc. | System and method for column access in random access memories |
JP4748828B2 (ja) | 1999-06-22 | 2011-08-17 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US6278633B1 (en) | 1999-11-05 | 2001-08-21 | Multi Level Memory Technology | High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations |
CN1307647C (zh) * | 2000-07-07 | 2007-03-28 | 睦塞德技术公司 | 动态随机存取存储器、存储器器件及其执行读命令的方法 |
JP2002245779A (ja) * | 2001-02-20 | 2002-08-30 | Nec Microsystems Ltd | 半導体記憶装置 |
US20040148226A1 (en) * | 2003-01-28 | 2004-07-29 | Shanahan Michael E. | Method and apparatus for electronic product information and business transactions |
KR100535102B1 (ko) * | 2003-05-23 | 2005-12-07 | 주식회사 하이닉스반도체 | 컬럼 어드레스 전송 구조 및 방법 |
KR100546339B1 (ko) * | 2003-07-04 | 2006-01-26 | 삼성전자주식회사 | 차동 데이터 스트로빙 모드와 데이터 반전 스킴을 가지는단일 데이터 스트로빙 모드를 선택적으로 구현할 수 있는반도체 장치 |
KR100532471B1 (ko) * | 2003-09-26 | 2005-12-01 | 삼성전자주식회사 | 입출력 데이터 위스 조절이 가능한 메모리 장치 및 그위스 조절 방법 |
KR100560773B1 (ko) * | 2003-10-09 | 2006-03-13 | 삼성전자주식회사 | 동작 모드의 재설정없이 버스트 길이를 제어할 수 있는반도체 메모리 장치 및 그것을 포함하는 메모리 시스템 |
WO2006129488A1 (ja) * | 2005-06-01 | 2006-12-07 | Matsushita Electric Industrial Co., Ltd. | 半導体記憶装置、及びそれを搭載した半導体集積回路 |
KR100615580B1 (ko) * | 2005-07-05 | 2006-08-25 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 데이터 입출력 방법과이를 구비한 메모리 시스템 |
KR100666182B1 (ko) * | 2006-01-02 | 2007-01-09 | 삼성전자주식회사 | 이웃하는 워드라인들이 비연속적으로 어드레싱되는 반도체메모리 장치 및 워드라인 어드레싱 방법 |
KR100761848B1 (ko) * | 2006-06-09 | 2007-09-28 | 삼성전자주식회사 | 반도체 장치에서의 데이터 출력장치 및 방법 |
JP2011034629A (ja) * | 2009-07-31 | 2011-02-17 | Elpida Memory Inc | 半導体装置 |
US9330735B2 (en) * | 2011-07-27 | 2016-05-03 | Rambus Inc. | Memory with deferred fractional row activation |
JP5972549B2 (ja) | 2011-09-29 | 2016-08-17 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
KR101983286B1 (ko) | 2018-11-05 | 2019-05-28 | 선진테크 주식회사 | 적설량 측정 장치 및 그 구동방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS621182A (ja) * | 1985-06-26 | 1987-01-07 | Hitachi Ltd | 半導体記憶装置 |
JPH0760600B2 (ja) * | 1987-08-19 | 1995-06-28 | 三菱電機株式会社 | 同期型記憶装置 |
US5093809A (en) * | 1989-04-21 | 1992-03-03 | Siemens Aktiengesellschaft | Static memory having pipeline registers |
JPH0814989B2 (ja) * | 1989-05-09 | 1996-02-14 | 日本電気株式会社 | 内部同期型スタティックram |
KR100214435B1 (ko) * | 1990-07-25 | 1999-08-02 | 사와무라 시코 | 동기식 버스트 엑세스 메모리 |
US5253212A (en) * | 1990-12-01 | 1993-10-12 | Hitachi, Ltd. | Semiconductor memory IC and semiconductor memory device |
US5319759A (en) * | 1991-04-22 | 1994-06-07 | Acer Incorporated | Burst address sequence generator |
JP2830594B2 (ja) * | 1992-03-26 | 1998-12-02 | 日本電気株式会社 | 半導体メモリ装置 |
-
1993
- 1993-04-02 JP JP5077236A patent/JPH06290582A/ja active Pending
-
1994
- 1994-03-30 EP EP94105060A patent/EP0618585B1/de not_active Expired - Lifetime
- 1994-03-30 DE DE69411428T patent/DE69411428T2/de not_active Expired - Lifetime
- 1994-03-30 DE DE69430076T patent/DE69430076T2/de not_active Expired - Lifetime
- 1994-03-30 EP EP97122998A patent/EP0840324B1/de not_active Expired - Lifetime
- 1994-04-01 US US08/221,574 patent/US5426606A/en not_active Ceased
- 1994-04-02 KR KR1019940007001A patent/KR0160360B1/ko not_active IP Right Cessation
-
1997
- 1997-06-20 US US08/879,516 patent/USRE35934E/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69411428T2 (de) | 1999-03-04 |
EP0840324A3 (de) | 1998-12-09 |
US5426606A (en) | 1995-06-20 |
EP0618585A2 (de) | 1994-10-05 |
KR0160360B1 (ko) | 1999-02-01 |
EP0618585A3 (de) | 1994-12-14 |
EP0840324B1 (de) | 2002-03-06 |
EP0618585B1 (de) | 1998-07-08 |
USRE35934E (en) | 1998-10-27 |
JPH06290582A (ja) | 1994-10-18 |
EP0840324A2 (de) | 1998-05-06 |
DE69411428D1 (de) | 1998-08-13 |
DE69430076T2 (de) | 2002-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69430076T2 (de) | Halbleiterspeicher und Zugriffverfahren für solchen Speicher | |
DE69942628D1 (de) | Halbleiterspeichersystem und Zugriffverfahren für Halbleiterspeicher und Halbleiterspeicher | |
DE69510337D1 (de) | Halbleiterspeicheranordnungen und herstellungsverfahren | |
DE69324127D1 (de) | Halbleiterspeicheranordnung und Datenlöschungsverfahren dafür | |
DE69435045D1 (de) | Halbleiter-Anordnung und Herstellungsverfahren dafür | |
DE69419469D1 (de) | Halbleiterbauelement und Halbleiterspeichervorrichtung | |
KR960009248B1 (en) | Clock-synchronous semiconductor memory device and the access method thereof | |
DE69321283T2 (de) | Datenspeicher und Zugriffseinrichtung | |
KR0121803B1 (en) | Semiconductor memory and redundant-address writing method | |
DE69840486D1 (de) | Halbleiterspeicher und Zugriffsverfahren hierauf | |
DE69429140D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung und Datenprogrammierverfahren | |
DE69326493T2 (de) | Zugriffsverfahren für eine synchrone Halbleiterspeicheranordnung | |
DE69520254D1 (de) | Halbleiterspeicher | |
DE69520333T2 (de) | Halbleiterspeicher | |
DE69427443D1 (de) | Halbleiterspeicheranordnung | |
DE69401556D1 (de) | Dynamische Redundanzschaltung für integrierten Speicher | |
DE69421737D1 (de) | Ein-Ausgabe-Speicherkarte und Ein-Ausgabe-Speicherkartensteuerungsverfahren | |
DE69421108T2 (de) | Halbleiterspeicheranordnung und Speicher-Initialisierungsverfahren | |
DE69720873D1 (de) | Speicherzugriffsverfahren und datenprozessor | |
DE69427107D1 (de) | Halbleiterspeicheranordnung | |
DE69421480D1 (de) | Halbleiterspeicheranordnung und Betriebsverfahren dafür | |
EP0631326A3 (de) | Halbleiterspeicheranordnung und Verfahren zur Herstellung. | |
DE69615597D1 (de) | Zugriffsvorrichtung für gemeinsamen Speicher | |
DE69421156T2 (de) | Steuerverfahren für eine Halbleiterspeicherschaltung | |
DE69432764D1 (de) | Halbleiterspeichereinrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKIO/TOKYO, JP Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
R082 | Change of representative |
Ref document number: 840324 Country of ref document: EP Representative=s name: GLAWE DELFS MOLL - PARTNERSCHAFT VON PATENT- U, DE |
|
R081 | Change of applicant/patentee |
Ref document number: 840324 Country of ref document: EP Owner name: RENESAS ELECTRONICS CORPORATION, JP Free format text: FORMER OWNER: NEC ELECTRONICS CORP., KAWASAKI, JP Effective date: 20120828 |
|
R082 | Change of representative |
Ref document number: 840324 Country of ref document: EP Representative=s name: GLAWE DELFS MOLL - PARTNERSCHAFT VON PATENT- U, DE Effective date: 20120828 |