DE69431148D1 - Methode zur Analyse von Oberflächen verunreinigungen auf Halbleitersubstraten - Google Patents
Methode zur Analyse von Oberflächen verunreinigungen auf HalbleitersubstratenInfo
- Publication number
- DE69431148D1 DE69431148D1 DE69431148T DE69431148T DE69431148D1 DE 69431148 D1 DE69431148 D1 DE 69431148D1 DE 69431148 T DE69431148 T DE 69431148T DE 69431148 T DE69431148 T DE 69431148T DE 69431148 D1 DE69431148 D1 DE 69431148D1
- Authority
- DE
- Germany
- Prior art keywords
- analysis
- semiconductor substrates
- surface contamination
- contamination
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/25—Chemistry: analytical and immunological testing including sample preparation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/25—Chemistry: analytical and immunological testing including sample preparation
- Y10T436/25375—Liberation or purification of sample or separation of material from a sample [e.g., filtering, centrifuging, etc.]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30899793A JP3278513B2 (ja) | 1993-12-09 | 1993-12-09 | 半導体基板の不純物分析方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69431148D1 true DE69431148D1 (de) | 2002-09-12 |
DE69431148T2 DE69431148T2 (de) | 2003-03-27 |
Family
ID=17987683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69431148T Expired - Fee Related DE69431148T2 (de) | 1993-12-09 | 1994-12-07 | Methode zur Analyse von Oberflächen verunreinigungen auf Halbleitersubstraten |
Country Status (6)
Country | Link |
---|---|
US (1) | US5633172A (de) |
EP (1) | EP0657924B1 (de) |
JP (1) | JP3278513B2 (de) |
KR (1) | KR100254015B1 (de) |
DE (1) | DE69431148T2 (de) |
TW (1) | TW267247B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2882377B2 (ja) * | 1996-08-23 | 1999-04-12 | 日本電気株式会社 | 金属の回収容器及び金属の回収方法 |
EP0838850A3 (de) * | 1996-10-24 | 1999-05-06 | Hamamatsu Photonics K.K. | Methode zur Plazierung fluoreszierender Einzelmoleküle auf und Visualisierung struktureller Defekte von Substratoberflächen |
KR100230990B1 (en) * | 1996-12-18 | 1999-11-15 | Samsung Electronics Co Ltd | Analysis method of aluminum layer for semiconductor wafer |
JP3336898B2 (ja) * | 1997-02-28 | 2002-10-21 | 三菱電機株式会社 | シリコンウエハ表面の不純物回収方法およびその装置 |
US5922606A (en) * | 1997-09-16 | 1999-07-13 | Nalco Chemical Company | Fluorometric method for increasing the efficiency of the rinsing and water recovery process in the manufacture of semiconductor chips |
US6210640B1 (en) | 1998-06-08 | 2001-04-03 | Memc Electronic Materials, Inc. | Collector for an automated on-line bath analysis system |
US6420275B1 (en) | 1999-08-30 | 2002-07-16 | Micron Technology, Inc. | System and method for analyzing a semiconductor surface |
WO2005073692A1 (ja) * | 2004-01-29 | 2005-08-11 | Nas Giken Inc. | 基板検査装置と基板検査方法と回収治具 |
JP4772610B2 (ja) | 2006-07-19 | 2011-09-14 | 東京エレクトロン株式会社 | 分析方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660250A (en) * | 1967-12-22 | 1972-05-02 | Ibm | Method of determining impurity profile of a semiconductor body |
US4168212A (en) * | 1974-05-16 | 1979-09-18 | The Post Office | Determining semiconductor characteristic |
US4180439A (en) * | 1976-03-15 | 1979-12-25 | International Business Machines Corporation | Anodic etching method for the detection of electrically active defects in silicon |
JPH0658927B2 (ja) * | 1983-09-26 | 1994-08-03 | 株式会社東芝 | 半導体薄膜の分析方法および分析用試料の回収装置 |
JPS617639A (ja) * | 1984-06-22 | 1986-01-14 | Toshiba Corp | 半導体薄膜の分解装置 |
JPH0625717B2 (ja) * | 1988-04-25 | 1994-04-06 | 株式会社東芝 | 不純物の測定方法 |
US4990459A (en) * | 1988-04-25 | 1991-02-05 | Kabushiki Kaisha Toshiba | Impurity measuring method |
JP2604037B2 (ja) * | 1988-07-11 | 1997-04-23 | 株式会社東芝 | 半導体処理装置 |
JP2772035B2 (ja) * | 1989-05-31 | 1998-07-02 | 東芝セラミックス株式会社 | ウエハ表面の不純物量の測定方法 |
JPH03239343A (ja) * | 1990-02-17 | 1991-10-24 | Sharp Corp | ウエハ表面液滴回収装置 |
JPH04110653A (ja) * | 1990-08-31 | 1992-04-13 | Hitachi Ltd | プラズマを用いた気体試料の分析方法 |
GB9022003D0 (en) * | 1990-10-10 | 1990-11-21 | Interox Chemicals Ltd | Purification of hydrogen peroxide |
JP2568756B2 (ja) * | 1990-12-27 | 1997-01-08 | 松下電器産業株式会社 | 半導体基板表面の不純物回収装置 |
JPH05343494A (ja) * | 1992-06-09 | 1993-12-24 | Nec Corp | 半導体装置の製造工程における汚染物の分析法 |
US5385629A (en) * | 1993-10-14 | 1995-01-31 | Micron Semiconductor, Inc. | After etch test method and apparatus |
-
1993
- 1993-12-09 JP JP30899793A patent/JP3278513B2/ja not_active Expired - Fee Related
-
1994
- 1994-12-03 KR KR1019940032708A patent/KR100254015B1/ko not_active IP Right Cessation
- 1994-12-07 US US08/350,618 patent/US5633172A/en not_active Expired - Fee Related
- 1994-12-07 EP EP94119316A patent/EP0657924B1/de not_active Expired - Lifetime
- 1994-12-07 DE DE69431148T patent/DE69431148T2/de not_active Expired - Fee Related
- 1994-12-17 TW TW083111812A patent/TW267247B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP0657924A3 (de) | 1996-07-10 |
TW267247B (de) | 1996-01-01 |
DE69431148T2 (de) | 2003-03-27 |
EP0657924A2 (de) | 1995-06-14 |
KR100254015B1 (ko) | 2000-05-01 |
US5633172A (en) | 1997-05-27 |
JPH07161791A (ja) | 1995-06-23 |
JP3278513B2 (ja) | 2002-04-30 |
EP0657924B1 (de) | 2002-08-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |