DE69432546D1 - Metallgehäuse für Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents

Metallgehäuse für Halbleiterbauelement und Verfahren zu seiner Herstellung

Info

Publication number
DE69432546D1
DE69432546D1 DE69432546T DE69432546T DE69432546D1 DE 69432546 D1 DE69432546 D1 DE 69432546D1 DE 69432546 T DE69432546 T DE 69432546T DE 69432546 T DE69432546 T DE 69432546T DE 69432546 D1 DE69432546 D1 DE 69432546D1
Authority
DE
Germany
Prior art keywords
production
semiconductor device
metal housing
housing
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69432546T
Other languages
English (en)
Other versions
DE69432546T2 (de
Inventor
Masanori Tsujioka
Junzoh Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69432546D1 publication Critical patent/DE69432546D1/de
Application granted granted Critical
Publication of DE69432546T2 publication Critical patent/DE69432546T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4817—Conductive parts for containers, e.g. caps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
DE69432546T 1993-09-16 1994-09-16 Metallgehäuse für Halbleiterbauelement und Verfahren zu seiner Herstellung Expired - Lifetime DE69432546T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25381893 1993-09-16

Publications (2)

Publication Number Publication Date
DE69432546D1 true DE69432546D1 (de) 2003-05-28
DE69432546T2 DE69432546T2 (de) 2003-11-20

Family

ID=17256568

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432546T Expired - Lifetime DE69432546T2 (de) 1993-09-16 1994-09-16 Metallgehäuse für Halbleiterbauelement und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (1) US5574959A (de)
EP (2) EP1282166A3 (de)
DE (1) DE69432546T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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DE19614006A1 (de) * 1996-04-09 1997-10-16 Basf Ag Verfahren zur Herstellung von Granulat und Formteilen aus Hartmetall- oder Cermet-Materialien
US5831290A (en) * 1997-02-25 1998-11-03 Quarton, Inc. Laser diode mounting structure
KR100217032B1 (ko) * 1997-06-14 1999-09-01 박호군 구리 용침용 텅스텐 골격 구조 제조 방법 및 이를 이용한 텅스텐-구리 복합재료 제조 방법
KR100215547B1 (ko) * 1997-06-14 1999-08-16 박원훈 마이크로파 소자용 텅스텐-구리 밀폐 패키지용 용기 및 그의 제조 방법
US6319459B1 (en) 1999-10-18 2001-11-20 Kemet Electronics Corporation Removal of organic acid based binders from powder metallurgy compacts
US6405785B1 (en) 2000-01-28 2002-06-18 Mold-Masters Limited Injection molding component with heating element and method of making
US6838046B2 (en) * 2001-05-14 2005-01-04 Honeywell International Inc. Sintering process and tools for use in metal injection molding of large parts
JP2003052185A (ja) 2001-05-30 2003-02-21 Canon Inc 電力変換器およびそれを用いる光起電力素子モジュール並びに発電装置
US6770114B2 (en) 2001-12-19 2004-08-03 Honeywell International Inc. Densified sintered powder and method
GB2387714A (en) * 2002-04-19 2003-10-22 Denselight Semiconductors Pte Mount for a semiconductor device
US7063815B2 (en) * 2003-12-05 2006-06-20 Agency For Science, Technology And Research Production of composite materials by powder injection molding and infiltration
CA2554564A1 (en) * 2004-02-04 2005-08-25 Gkn Sinter Metals, Inc. Sheet material infiltration of powder metal parts
US7186369B1 (en) * 2004-08-04 2007-03-06 The United States Of America As Represented By The Secretary Of The Navy Method of forming a part made of a molybdenum-copper composite material
US7341093B2 (en) * 2005-02-11 2008-03-11 Llc 2 Holdings Limited, Llc Copper-based alloys and their use for infiltration of powder metal parts
US20100111745A1 (en) * 2007-01-31 2010-05-06 Urevich David J Method of producing composite materials through metal injection molding
DE102007048617A1 (de) * 2007-10-10 2009-04-16 Robert Bosch Gmbh Lasermodul
KR101000684B1 (ko) * 2007-10-11 2010-12-10 세종대학교산학협력단 이산화티타늄 나노튜브분말 및 이를 이용한 고압수소저장탱크 삽입용 판형 필름의 제조방법
FR2985855B1 (fr) * 2012-01-17 2014-11-21 Soc Fr Detecteurs Infrarouges Sofradir Procede pour la realisation de traversees electriques etanches au travers d'un boitier d'encapsulation et boitier d'encapsulation muni d'au moins l'une de ces traversees electriques

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2137829B2 (de) * 1970-08-01 1975-11-13 Institutul De Cercetari Metalurgice Icem, Bukarest Verfahren zur Herstellung des Werkstoffes für eine Funkenerosions-Elektrode
US3929476A (en) * 1972-05-05 1975-12-30 Minnesota Mining & Mfg Precision molded refractory articles and method of making
US4431449A (en) * 1977-09-26 1984-02-14 Minnesota Mining And Manufacturing Company Infiltrated molded articles of spherical non-refractory metal powders
GB1603855A (en) * 1978-05-10 1981-12-02 Johnson Matthey Co Ltd Resin-impregnated sintered silver articles
US4373127A (en) * 1980-02-06 1983-02-08 Minnesota Mining And Manufacturing Company EDM Electrodes
US4327156A (en) * 1980-05-12 1982-04-27 Minnesota Mining And Manufacturing Company Infiltrated powdered metal composite article
US4554218A (en) * 1981-11-05 1985-11-19 Minnesota Mining And Manufacturing Company Infiltrated powered metal composite article
US4491558A (en) * 1981-11-05 1985-01-01 Minnesota Mining And Manufacturing Company Austenitic manganese steel-containing composite article
JPS6048550B2 (ja) * 1981-12-31 1985-10-28 豊信 水谷 高温溶融金属用耐蝕性塗料
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS59143347A (ja) * 1983-02-03 1984-08-16 Sumitomo Electric Ind Ltd 半導体基板材料の製造方法
US4710223A (en) * 1986-03-21 1987-12-01 Rockwell International Corporation Infiltrated sintered articles
US5017526A (en) * 1986-05-08 1991-05-21 Lanxide Technology Company, Lp Methods of making shaped ceramic composites
AU615964B2 (en) * 1987-09-28 1991-10-17 Fine Particle Technology Corp. Copper-tungsten metal mixture and process
EP0340957B1 (de) * 1988-04-30 1994-03-16 Toyota Jidosha Kabushiki Kaisha Verfahren zur Herstellung von Verbundmetall unter Beschleunigung der Infiltration des Matrix-Metalls durch feine Teilchen eines dritten Materials
IT1230629B (it) * 1988-11-11 1991-10-28 Nuova Samin Spa Procedimento per la produzione di materiali compositi a matrice metallica a contenuto di rinforzo controllato
JP2746279B2 (ja) * 1990-06-18 1998-05-06 日本タングステン 株式会社 半導体装置用基板材料及びその製造方法
US5342573A (en) * 1991-04-23 1994-08-30 Sumitomo Electric Industries, Ltd. Method of producing a tungsten heavy alloy product
JPH05222402A (ja) * 1992-02-12 1993-08-31 Sumitomo Electric Ind Ltd タングステン重合金製品の製造方法

Also Published As

Publication number Publication date
EP0645804B1 (de) 2003-04-23
EP0645804A2 (de) 1995-03-29
EP1282166A3 (de) 2003-03-05
EP0645804A3 (de) 1996-05-29
DE69432546T2 (de) 2003-11-20
US5574959A (en) 1996-11-12
EP1282166A2 (de) 2003-02-05

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