DE69434937D1 - Verfahren zur Herstellung von Leistungsbauteilen in MOS-Technologie - Google Patents
Verfahren zur Herstellung von Leistungsbauteilen in MOS-TechnologieInfo
- Publication number
- DE69434937D1 DE69434937D1 DE69434937T DE69434937T DE69434937D1 DE 69434937 D1 DE69434937 D1 DE 69434937D1 DE 69434937 T DE69434937 T DE 69434937T DE 69434937 T DE69434937 T DE 69434937T DE 69434937 D1 DE69434937 D1 DE 69434937D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- power components
- mos technology
- mos
- technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94830316A EP0689239B1 (de) | 1994-06-23 | 1994-06-23 | Verfahren zur Herstellung von Leistungsbauteilen in MOS-Technologie |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69434937D1 true DE69434937D1 (de) | 2007-04-19 |
Family
ID=8218476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69434937T Expired - Lifetime DE69434937D1 (de) | 1994-06-23 | 1994-06-23 | Verfahren zur Herstellung von Leistungsbauteilen in MOS-Technologie |
Country Status (4)
Country | Link |
---|---|
US (2) | US5933733A (de) |
EP (1) | EP0689239B1 (de) |
JP (1) | JP2618615B2 (de) |
DE (1) | DE69434937D1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6025231A (en) * | 1997-02-18 | 2000-02-15 | Texas Instruments Incorporated | Self aligned DMOS transistor and method of fabrication |
FR2767964B1 (fr) * | 1997-09-04 | 2001-06-08 | St Microelectronics Sa | Procede de realisation de la zone de canal d'un transistor dmos |
JP3429654B2 (ja) * | 1997-12-24 | 2003-07-22 | セイコーインスツルメンツ株式会社 | 半導体集積回路装置の製造方法 |
US6707103B1 (en) * | 1998-03-05 | 2004-03-16 | International Rectifier Corporation | Low voltage rad hard MOSFET |
DE19845003C1 (de) * | 1998-09-30 | 2000-02-10 | Siemens Ag | Vertikaler Feldeffekttransistor mit innenliegendem ringförmigen Gate und Herstellverfahren |
EP0999579B1 (de) | 1998-11-04 | 2007-05-30 | Lucent Technologies Inc. | Induktivität oder Leiterbahn mit geringem Verlust in einer integrierten Schaltung |
US6225182B1 (en) * | 1999-08-30 | 2001-05-01 | Agere Systems Guardian Corp. | Simplified high Q inductor substrate |
US6174778B1 (en) * | 1998-12-15 | 2001-01-16 | United Microelectronics Corp. | Method of fabricating metal oxide semiconductor |
US6624030B2 (en) | 2000-12-19 | 2003-09-23 | Advanced Power Devices, Inc. | Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region |
US20030030051A1 (en) | 2001-08-09 | 2003-02-13 | International Rectifier Corporation | Superjunction device with improved avalanche capability and breakdown voltage |
US7107040B2 (en) * | 2002-02-11 | 2006-09-12 | The Chamberlain Group, Inc. | Method and apparatus for displaying blocked transmitter information |
US6861303B2 (en) * | 2003-05-09 | 2005-03-01 | Texas Instruments Incorporated | JFET structure for integrated circuit and fabrication method |
JP4437655B2 (ja) * | 2003-10-02 | 2010-03-24 | 三菱電機株式会社 | 半導体装置及び半導体装置の駆動回路 |
US7166890B2 (en) | 2003-10-21 | 2007-01-23 | Srikant Sridevan | Superjunction device with improved ruggedness |
KR100629605B1 (ko) * | 2004-12-31 | 2006-09-27 | 동부일렉트로닉스 주식회사 | 엘디모스 채널 형성 방법 |
US7553734B2 (en) * | 2005-10-17 | 2009-06-30 | Princeton Lightwave, Inc. | Method for forming an avalanche photodiode |
JP4812480B2 (ja) * | 2006-03-22 | 2011-11-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR100770538B1 (ko) | 2006-08-09 | 2007-10-25 | 동부일렉트로닉스 주식회사 | 횡형 디모스 트랜지스터의 제조방법 |
US8274128B2 (en) * | 2007-03-23 | 2012-09-25 | Siliconix Technology C. V. Ir | Semiconductor device with buffer layer |
US10226818B2 (en) | 2009-03-20 | 2019-03-12 | Pratt & Whitney Canada Corp. | Process for joining powder injection molded parts |
US8525257B2 (en) * | 2009-11-18 | 2013-09-03 | Micrel, Inc. | LDMOS transistor with asymmetric spacer as gate |
US9722041B2 (en) | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
US9970318B2 (en) | 2014-06-25 | 2018-05-15 | Pratt & Whitney Canada Corp. | Shroud segment and method of manufacturing |
DE102015118616B3 (de) * | 2015-10-30 | 2017-04-13 | Infineon Technologies Austria Ag | Latchup-fester Transistor |
JP6687476B2 (ja) * | 2016-07-25 | 2020-04-22 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
US11205718B1 (en) * | 2018-11-26 | 2021-12-21 | Texas Instruments Incorporated | High performance super-beta NPN (SBNPN) |
CN112117193B (zh) * | 2020-09-21 | 2023-05-16 | 杭州芯迈半导体技术有限公司 | 碳化硅mosfet器件及其制造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3461360A (en) * | 1965-06-30 | 1969-08-12 | Ibm | Semiconductor devices with cup-shaped regions |
US4001860A (en) * | 1973-11-12 | 1977-01-04 | Signetics Corporation | Double diffused metal oxide semiconductor structure with isolated source and drain and method |
US3909320A (en) * | 1973-12-26 | 1975-09-30 | Signetics Corp | Method for forming MOS structure using double diffusion |
JPS5185381A (de) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | |
DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
JPS53102668A (en) * | 1977-02-18 | 1978-09-07 | Toshiba Corp | Manufacture for semiconductor device |
US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
JPS59920A (ja) * | 1982-06-23 | 1984-01-06 | Fujitsu Ltd | 半導体装置の製造方法 |
US4417385A (en) * | 1982-08-09 | 1983-11-29 | General Electric Company | Processes for manufacturing insulated-gate semiconductor devices with integral shorts |
IT1213234B (it) * | 1984-10-25 | 1989-12-14 | Sgs Thomson Microelectronics | Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos. |
JPS6251216A (ja) * | 1985-08-30 | 1987-03-05 | Toshiba Corp | 半導体装置の製造方法 |
JPS62131579A (ja) * | 1985-12-03 | 1987-06-13 | Nec Corp | 縦型電界効果トランジスタの製造方法 |
US4716126A (en) * | 1986-06-05 | 1987-12-29 | Siliconix Incorporated | Fabrication of double diffused metal oxide semiconductor transistor |
JPH0783122B2 (ja) * | 1988-12-01 | 1995-09-06 | 富士電機株式会社 | 半導体装置の製造方法 |
JPH02239670A (ja) * | 1989-03-14 | 1990-09-21 | Fujitsu Ltd | 半導体装置 |
JPH03105978A (ja) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | 半導体装置 |
US4931408A (en) * | 1989-10-13 | 1990-06-05 | Siliconix Incorporated | Method of fabricating a short-channel low voltage DMOS transistor |
JPH0831606B2 (ja) * | 1989-11-17 | 1996-03-27 | 株式会社東芝 | 大電力用半導体装置 |
JPH03241747A (ja) * | 1990-02-20 | 1991-10-28 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JPH0465132A (ja) * | 1990-07-05 | 1992-03-02 | Oki Electric Ind Co Ltd | 二重拡散型mos fetの製造方法 |
EP0481153B1 (de) * | 1990-10-16 | 1997-02-12 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom |
JP2632101B2 (ja) * | 1990-11-05 | 1997-07-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
KR940004446B1 (ko) * | 1990-11-05 | 1994-05-25 | 미쓰비시뎅끼 가부시끼가이샤 | 반도체장치의 제조방법 |
US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
JPH05129602A (ja) * | 1991-11-01 | 1993-05-25 | Sony Corp | Mis型半導体装置の製造方法 |
US5268586A (en) * | 1992-02-25 | 1993-12-07 | North American Philips Corporation | Vertical power MOS device with increased ruggedness and method of fabrication |
US5430314A (en) * | 1992-04-23 | 1995-07-04 | Siliconix Incorporated | Power device with buffered gate shield region |
-
1994
- 1994-06-23 EP EP94830316A patent/EP0689239B1/de not_active Expired - Lifetime
- 1994-06-23 DE DE69434937T patent/DE69434937D1/de not_active Expired - Lifetime
-
1995
- 1995-06-21 US US08/493,004 patent/US5933733A/en not_active Expired - Lifetime
- 1995-06-22 JP JP7155983A patent/JP2618615B2/ja not_active Expired - Lifetime
-
1997
- 1997-05-14 US US08/856,109 patent/US6140679A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5933733A (en) | 1999-08-03 |
JP2618615B2 (ja) | 1997-06-11 |
EP0689239B1 (de) | 2007-03-07 |
JPH0817849A (ja) | 1996-01-19 |
US6140679A (en) | 2000-10-31 |
EP0689239A1 (de) | 1995-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |