DE69435114D1 - Verfahren zur Herstellung eines Halbleiterbauelements - Google Patents
Verfahren zur Herstellung eines HalbleiterbauelementsInfo
- Publication number
- DE69435114D1 DE69435114D1 DE69435114T DE69435114T DE69435114D1 DE 69435114 D1 DE69435114 D1 DE 69435114D1 DE 69435114 T DE69435114 T DE 69435114T DE 69435114 T DE69435114 T DE 69435114T DE 69435114 D1 DE69435114 D1 DE 69435114D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18075293 | 1993-06-25 | ||
| JP3661694 | 1994-02-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69435114D1 true DE69435114D1 (de) | 2008-08-21 |
Family
ID=26375695
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69435114T Expired - Lifetime DE69435114D1 (de) | 1993-06-25 | 1994-06-27 | Verfahren zur Herstellung eines Halbleiterbauelements |
| DE69432615T Expired - Lifetime DE69432615T2 (de) | 1993-06-25 | 1994-06-27 | Halbleiteranordnung mit einer gerichteten nichtmonocristallinen Siliziumdünnschicht und Verfahren zur Herstellung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69432615T Expired - Lifetime DE69432615T2 (de) | 1993-06-25 | 1994-06-27 | Halbleiteranordnung mit einer gerichteten nichtmonocristallinen Siliziumdünnschicht und Verfahren zur Herstellung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5882960A (de) |
| EP (3) | EP1026751A3 (de) |
| KR (2) | KR100299721B1 (de) |
| CN (4) | CN1055786C (de) |
| DE (2) | DE69435114D1 (de) |
| TW (1) | TW295703B (de) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6730549B1 (en) | 1993-06-25 | 2004-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for its preparation |
| JPH0766424A (ja) | 1993-08-20 | 1995-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TW264575B (de) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP2860869B2 (ja) * | 1993-12-02 | 1999-02-24 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| KR100319332B1 (ko) * | 1993-12-22 | 2002-04-22 | 야마자끼 순페이 | 반도체장치및전자광학장치 |
| US6706572B1 (en) | 1994-08-31 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor using a high pressure oxidation step |
| KR100265179B1 (ko) * | 1995-03-27 | 2000-09-15 | 야마자끼 순페이 | 반도체장치와 그의 제작방법 |
| JP3645380B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
| JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3645379B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5985740A (en) | 1996-01-19 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including reduction of a catalyst |
| US6478263B1 (en) | 1997-01-17 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP3645378B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5888858A (en) | 1996-01-20 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| US6180439B1 (en) * | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
| US7056381B1 (en) * | 1996-01-26 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device |
| US6465287B1 (en) | 1996-01-27 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization |
| TW374196B (en) * | 1996-02-23 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same |
| TW335503B (en) | 1996-02-23 | 1998-07-01 | Semiconductor Energy Lab Kk | Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method |
| US5792700A (en) * | 1996-05-31 | 1998-08-11 | Micron Technology, Inc. | Semiconductor processing method for providing large grain polysilicon films |
| JPH09321310A (ja) * | 1996-05-31 | 1997-12-12 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| TW451284B (en) | 1996-10-15 | 2001-08-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| JP3630894B2 (ja) | 1996-12-24 | 2005-03-23 | 株式会社半導体エネルギー研究所 | 電荷転送半導体装置およびその作製方法並びにイメージセンサ |
| JPH10199807A (ja) | 1996-12-27 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 結晶性珪素膜の作製方法 |
| JPH10200114A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 薄膜回路 |
| JP3983334B2 (ja) * | 1997-02-20 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100560047B1 (ko) * | 1997-02-24 | 2006-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체박막및반도체장치 |
| JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6307214B1 (en) | 1997-06-06 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
| US6452211B1 (en) | 1997-06-10 | 2002-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
| US6501094B1 (en) * | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
| JP4318768B2 (ja) | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000031488A (ja) | 1997-08-26 | 2000-01-28 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4601731B2 (ja) | 1997-08-26 | 2010-12-22 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置を有する電子機器及び半導体装置の作製方法 |
| TW408351B (en) | 1997-10-17 | 2000-10-11 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| JP2000058839A (ja) | 1998-08-05 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法 |
| EP1744349A3 (de) | 1998-10-05 | 2007-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren, Strahlhomogenisierer und Herstellungsverfahren für ein Halbleiterbauelement |
| JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| DE69942442D1 (de) | 1999-01-11 | 2010-07-15 | Semiconductor Energy Lab | Halbleiteranordnung mit Treiber-TFT und Pixel-TFT auf einem Substrat |
| US6590229B1 (en) * | 1999-01-21 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for production thereof |
| US6593592B1 (en) * | 1999-01-29 | 2003-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having thin film transistors |
| US6535535B1 (en) | 1999-02-12 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and semiconductor device |
| US7122835B1 (en) * | 1999-04-07 | 2006-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and a method of manufacturing the same |
| JP4827276B2 (ja) | 1999-07-05 | 2011-11-30 | 株式会社半導体エネルギー研究所 | レーザー照射装置、レーザー照射方法及び半導体装置の作製方法 |
| TW544743B (en) * | 1999-08-13 | 2003-08-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US6548370B1 (en) * | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
| US7232742B1 (en) | 1999-11-26 | 2007-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film |
| US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
| KR100450595B1 (ko) * | 2000-02-09 | 2004-09-30 | 히다찌 케이블 리미티드 | 결정실리콘 반도체장치 및 그 장치의 제조방법 |
| GB0006958D0 (en) * | 2000-03-23 | 2000-05-10 | Koninkl Philips Electronics Nv | Method of manufacturing a transistor |
| US7078321B2 (en) | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6737672B2 (en) * | 2000-08-25 | 2004-05-18 | Fujitsu Limited | Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus |
| JP4045731B2 (ja) * | 2000-09-25 | 2008-02-13 | 株式会社日立製作所 | 薄膜半導体素子の製造方法 |
| JP2002176180A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | 薄膜半導体素子及びその製造方法 |
| US6830994B2 (en) * | 2001-03-09 | 2004-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a crystallized semiconductor film |
| JP2002270507A (ja) * | 2001-03-14 | 2002-09-20 | Hitachi Cable Ltd | 結晶シリコン層の形成方法および結晶シリコン半導体装置 |
| US7238557B2 (en) * | 2001-11-14 | 2007-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP2003273016A (ja) * | 2002-01-11 | 2003-09-26 | Sharp Corp | 半導体膜およびその形成方法、並びに、その半導体膜を用いた半導体装置、ディスプレイ装置。 |
| US6908797B2 (en) | 2002-07-09 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7084423B2 (en) * | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| JP4140765B2 (ja) * | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
| US7560789B2 (en) | 2005-05-27 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7820470B2 (en) | 2005-07-15 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of micro-electro-mechanical device |
| US7723205B2 (en) * | 2005-09-27 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device, manufacturing method thereof, liquid crystal display device, RFID tag, light emitting device, and electronic device |
| US8008735B2 (en) | 2006-03-20 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Micromachine device with a spatial portion formed within |
| JP6348707B2 (ja) * | 2013-12-11 | 2018-06-27 | 東京エレクトロン株式会社 | アモルファスシリコンの結晶化方法、結晶化シリコン膜の成膜方法、半導体装置の製造方法および成膜装置 |
| CN113725072B (zh) * | 2021-08-26 | 2024-04-02 | 长江存储科技有限责任公司 | 硬掩膜的制作方法以及半导体器件的制作方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928327A (ja) * | 1982-08-09 | 1984-02-15 | Nippon Telegr & Teleph Corp <Ntt> | 単結晶半導体膜形成法 |
| JPS5868923A (ja) * | 1981-10-19 | 1983-04-25 | Nippon Telegr & Teleph Corp <Ntt> | 結晶薄膜の製造方法 |
| JPS60136304A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体単結晶膜の製造方法 |
| CA1239706A (en) * | 1984-11-26 | 1988-07-26 | Hisao Hayashi | Method of forming a thin semiconductor film |
| DE3779672T2 (de) * | 1986-03-07 | 1993-01-28 | Iizuka Kozo | Verfahren zum herstellen einer monokristallinen halbleiterschicht. |
| JPS6330776A (ja) * | 1986-07-24 | 1988-02-09 | Anritsu Corp | レ−ダ映像多重表示装置 |
| US5153702A (en) * | 1987-06-10 | 1992-10-06 | Hitachi, Ltd. | Thin film semiconductor device and method for fabricating the same |
| JPS63307776A (ja) * | 1987-06-10 | 1988-12-15 | Hitachi Ltd | 薄膜半導体装置とその製造方法 |
| JPH01132116A (ja) * | 1987-08-08 | 1989-05-24 | Canon Inc | 結晶物品及びその形成方法並びにそれを用いた半導体装置 |
| JP2517330B2 (ja) * | 1987-11-18 | 1996-07-24 | 三洋電機株式会社 | Ｓｏｉ構造の形成方法 |
| JPH0232527A (ja) * | 1988-07-22 | 1990-02-02 | Nec Corp | 単結晶薄膜形成法 |
| JPH02143415A (ja) * | 1988-11-24 | 1990-06-01 | Nippon Sheet Glass Co Ltd | 単結晶シリコン膜の形成方法 |
| JP2880175B2 (ja) * | 1988-11-30 | 1999-04-05 | 株式会社日立製作所 | レーザアニール方法及び薄膜半導体装置 |
| US5278093A (en) * | 1989-09-23 | 1994-01-11 | Canon Kabushiki Kaisha | Method for forming semiconductor thin film |
| US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
| JP2840434B2 (ja) * | 1990-11-15 | 1998-12-24 | キヤノン株式会社 | 結晶の形成方法 |
| JPH0571993A (ja) | 1991-09-17 | 1993-03-23 | Nec Corp | 基線位置調整方式 |
| JPH0582442A (ja) * | 1991-09-18 | 1993-04-02 | Sony Corp | 多結晶半導体薄膜の製造方法 |
| DE69428387T2 (de) * | 1993-02-15 | 2002-07-04 | Semiconductor Energy Lab | Herstellungsverfahren für eine kristallisierte Halbleiterschicht |
| US5275851A (en) * | 1993-03-03 | 1994-01-04 | The Penn State Research Foundation | Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates |
-
1994
- 1994-06-22 TW TW083105677A patent/TW295703B/zh not_active IP Right Cessation
- 1994-06-24 CN CN94108922A patent/CN1055786C/zh not_active Expired - Lifetime
- 1994-06-24 CN CNB991248120A patent/CN1161831C/zh not_active Expired - Lifetime
- 1994-06-25 KR KR1019940014938A patent/KR100299721B1/ko not_active IP Right Cessation
- 1994-06-27 EP EP00201134A patent/EP1026751A3/de not_active Withdrawn
- 1994-06-27 EP EP94304663A patent/EP0631325B1/de not_active Expired - Lifetime
- 1994-06-27 EP EP00201135A patent/EP1026752B1/de not_active Expired - Lifetime
- 1994-06-27 DE DE69435114T patent/DE69435114D1/de not_active Expired - Lifetime
- 1994-06-27 DE DE69432615T patent/DE69432615T2/de not_active Expired - Lifetime
-
1997
- 1997-08-15 US US08/911,912 patent/US5882960A/en not_active Expired - Lifetime
- 1997-12-29 KR KR1019970075810A patent/KR100306834B1/ko not_active IP Right Cessation
-
1998
- 1998-08-15 CN CNB981183824A patent/CN1208807C/zh not_active Expired - Fee Related
-
1999
- 1999-11-10 CN CNB991248112A patent/CN1155991C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0631325A3 (de) | 1996-12-18 |
| TW295703B (de) | 1997-01-11 |
| CN1267907A (zh) | 2000-09-27 |
| EP0631325A2 (de) | 1994-12-28 |
| CN1222752A (zh) | 1999-07-14 |
| KR100299721B1 (ko) | 2001-12-15 |
| CN1155991C (zh) | 2004-06-30 |
| EP1026751A2 (de) | 2000-08-09 |
| EP0631325B1 (de) | 2003-05-07 |
| CN1100562A (zh) | 1995-03-22 |
| EP1026751A3 (de) | 2002-11-20 |
| KR100306834B1 (ko) | 2004-02-11 |
| DE69432615D1 (de) | 2003-06-12 |
| KR19990055848A (ko) | 1999-07-15 |
| CN1055786C (zh) | 2000-08-23 |
| US5882960A (en) | 1999-03-16 |
| CN1208807C (zh) | 2005-06-29 |
| DE69432615T2 (de) | 2004-02-19 |
| KR950002076A (ko) | 1995-01-04 |
| EP1026752B1 (de) | 2008-07-09 |
| EP1026752A3 (de) | 2002-11-20 |
| CN1267902A (zh) | 2000-09-27 |
| EP1026752A2 (de) | 2000-08-09 |
| CN1161831C (zh) | 2004-08-11 |
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