DE69502750T2 - Plasmaerzeugungsvorrichtung und Plasmabearbeitungsvorrichtung - Google Patents

Plasmaerzeugungsvorrichtung und Plasmabearbeitungsvorrichtung

Info

Publication number
DE69502750T2
DE69502750T2 DE69502750T DE69502750T DE69502750T2 DE 69502750 T2 DE69502750 T2 DE 69502750T2 DE 69502750 T DE69502750 T DE 69502750T DE 69502750 T DE69502750 T DE 69502750T DE 69502750 T2 DE69502750 T2 DE 69502750T2
Authority
DE
Germany
Prior art keywords
plasma
processing device
generating device
plasma processing
plasma generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69502750T
Other languages
English (en)
Other versions
DE69502750D1 (de
Inventor
Takahiro Nakahigashi
Hajime Kuwahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Application granted granted Critical
Publication of DE69502750D1 publication Critical patent/DE69502750D1/de
Publication of DE69502750T2 publication Critical patent/DE69502750T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
DE69502750T 1994-03-02 1995-03-01 Plasmaerzeugungsvorrichtung und Plasmabearbeitungsvorrichtung Expired - Fee Related DE69502750T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6032494A JPH07245193A (ja) 1994-03-02 1994-03-02 プラズマ発生装置及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
DE69502750D1 DE69502750D1 (de) 1998-07-09
DE69502750T2 true DE69502750T2 (de) 1999-01-28

Family

ID=12360554

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69502750T Expired - Fee Related DE69502750T2 (de) 1994-03-02 1995-03-01 Plasmaerzeugungsvorrichtung und Plasmabearbeitungsvorrichtung

Country Status (4)

Country Link
US (1) US5651825A (de)
EP (1) EP0670666B1 (de)
JP (1) JPH07245193A (de)
DE (1) DE69502750T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
KR100277833B1 (ko) * 1998-10-09 2001-01-15 정선종 라디오파 유도 플라즈마 소스 발생장치
US7497922B2 (en) 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
US7560657B2 (en) 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
US7465362B2 (en) 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US7494904B2 (en) 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
CN1304103C (zh) 2002-05-08 2007-03-14 达纳公司 等离子体辅助碳结构的形成
US7498066B2 (en) * 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US7445817B2 (en) 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US7189940B2 (en) 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
US7534363B2 (en) * 2002-12-13 2009-05-19 Lam Research Corporation Method for providing uniform removal of organic material
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US7135653B2 (en) * 2003-12-09 2006-11-14 Rutberg Alexander P Multi-phase alternating current plasma generator
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
JP2012169553A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 基板処理装置
TW201330705A (zh) * 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
JP5888674B2 (ja) * 2012-02-28 2016-03-22 国立大学法人名古屋大学 エッチング装置およびエッチング方法およびクリーニング装置
KR102107256B1 (ko) * 2012-05-23 2020-05-06 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0275965B1 (de) * 1987-01-19 1995-05-31 Hitachi, Ltd. Mit einem Plasma arbeitendes Gerät
KR920002864B1 (ko) * 1987-07-20 1992-04-06 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리방법 및 그 장치
KR910002310A (ko) * 1988-06-29 1991-01-31 미다 가쓰시게 플라즈마 처리장치
KR900013579A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 마이크로파 플라즈마 처리방법 및 장치
US5081398A (en) * 1989-10-20 1992-01-14 Board Of Trustees Operating Michigan State University Resonant radio frequency wave coupler apparatus using higher modes
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
JP2598336B2 (ja) * 1990-09-21 1997-04-09 株式会社日立製作所 プラズマ処理装置
US5359177A (en) * 1990-11-14 1994-10-25 Mitsubishi Denki Kabushiki Kaisha Microwave plasma apparatus for generating a uniform plasma
JPH04253328A (ja) * 1991-01-29 1992-09-09 Hitachi Ltd 表面処理装置
JPH04354875A (ja) * 1991-05-30 1992-12-09 Hitachi Ltd 金属酸化物薄膜の作製方法
US5206471A (en) * 1991-12-26 1993-04-27 Applied Science And Technology, Inc. Microwave activated gas generator
US5368685A (en) * 1992-03-24 1994-11-29 Hitachi, Ltd. Dry etching apparatus and method
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing

Also Published As

Publication number Publication date
EP0670666A1 (de) 1995-09-06
DE69502750D1 (de) 1998-07-09
JPH07245193A (ja) 1995-09-19
EP0670666B1 (de) 1998-06-03
US5651825A (en) 1997-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee